{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,21]],"date-time":"2026-04-21T22:06:05Z","timestamp":1776809165295,"version":"3.51.2"},"reference-count":33,"publisher":"MDPI AG","issue":"20","license":[{"start":{"date-parts":[[2022,10,12]],"date-time":"2022-10-12T00:00:00Z","timestamp":1665532800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100012166","name":"National Key R&amp;D Program of China","doi-asserted-by":"publisher","award":["2018YFB2200204"],"award-info":[{"award-number":["2018YFB2200204"]}],"id":[{"id":"10.13039\/501100012166","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100012166","name":"National Key R&amp;D Program of China","doi-asserted-by":"publisher","award":["2020010601012162"],"award-info":[{"award-number":["2020010601012162"]}],"id":[{"id":"10.13039\/501100012166","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100012166","name":"National Key R&amp;D Program of China","doi-asserted-by":"publisher","award":["KLLDT202002"],"award-info":[{"award-number":["KLLDT202002"]}],"id":[{"id":"10.13039\/501100012166","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Science and Technology Project from Wuhan City","award":["2018YFB2200204"],"award-info":[{"award-number":["2018YFB2200204"]}]},{"name":"Science and Technology Project from Wuhan City","award":["2020010601012162"],"award-info":[{"award-number":["2020010601012162"]}]},{"name":"Science and Technology Project from Wuhan City","award":["KLLDT202002"],"award-info":[{"award-number":["KLLDT202002"]}]},{"name":"Open-Foundation of Key Laboratory of Laser Device Technology, China North Industries Group Corporation Limited","award":["2018YFB2200204"],"award-info":[{"award-number":["2018YFB2200204"]}]},{"name":"Open-Foundation of Key Laboratory of Laser Device Technology, China North Industries Group Corporation Limited","award":["2020010601012162"],"award-info":[{"award-number":["2020010601012162"]}]},{"name":"Open-Foundation of Key Laboratory of Laser Device Technology, China North Industries Group Corporation Limited","award":["KLLDT202002"],"award-info":[{"award-number":["KLLDT202002"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>With the rapid development of photo-communication technologies, avalanche photodiode (APD) will play an increasingly important role in the future due to its high quantum efficiency, low power consumption, and small size. The monolithic integration of optical components and signal processing electronics on silicon substrate chips is crucial to driving cost reduction and performance improvement; thus, the technical research on InGaAs\/Si APD is of great significance. This work is the first to demonstrate the use of a photon-trapping (PT) structure to improve the performance of the InGaAs\/Si APD based on an SOI substrate, which exhibits very high absorption efficiency at 1310 nm wavelength while the thickness of the absorption layer is kept at 800 nm. Based on the optical and electrical simulations, an optimized InGaAs\/Si PT-APD is proposed, which exhibits a better performance and a higher responsivity compared to the original InGaAs\/Si APD.<\/jats:p>","DOI":"10.3390\/s22207724","type":"journal-article","created":{"date-parts":[[2022,10,12]],"date-time":"2022-10-12T05:31:18Z","timestamp":1665552678000},"page":"7724","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":12,"title":["Photon-Trapping Microstructure for InGaAs\/Si Avalanche Photodiodes Operating at 1.31 \u03bcm"],"prefix":"10.3390","volume":"22","author":[{"given":"Hewei","family":"Zhang","sequence":"first","affiliation":[{"name":"Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yang","family":"Tian","sequence":"additional","affiliation":[{"name":"Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Qian","family":"Li","sequence":"additional","affiliation":[{"name":"Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Wenqiang","family":"Ding","sequence":"additional","affiliation":[{"name":"Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xuzhen","family":"Yu","sequence":"additional","affiliation":[{"name":"Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zebiao","family":"Lin","sequence":"additional","affiliation":[{"name":"Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xuyang","family":"Feng","sequence":"additional","affiliation":[{"name":"Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yanli","family":"Zhao","sequence":"additional","affiliation":[{"name":"Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2022,10,12]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"109","DOI":"10.1109\/JLT.2006.888481","article-title":"Recent advances in telecommunications avalanche photodiodes","volume":"25","author":"Campbell","year":"2007","journal-title":"J. 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