{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,20]],"date-time":"2026-01-20T11:12:03Z","timestamp":1768907523840,"version":"3.49.0"},"reference-count":26,"publisher":"MDPI AG","issue":"20","license":[{"start":{"date-parts":[[2022,10,16]],"date-time":"2022-10-16T00:00:00Z","timestamp":1665878400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"Air Force Office of Scientific Research","award":["FA9550-21-1-0347"],"award-info":[{"award-number":["FA9550-21-1-0347"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>We propose new a Si-based waveguided Superlattice-on-Insulator (SLOI) platforms for high-performance electro-optical (EO) 2 \u00d7 2 and N \u00d7 M switching and 1 \u00d7 1 modulation, including broad spectrum and resonant. We present a theoretical investigation based on the tight-binding Hamiltonian of the Pockels EO effect in the lattice-matched undoped (GaP)N\/(Si2)M, (AlP)N\/(Si2)M, (ZnS)N\/(Si2)M, (AlN)N\/(3C\u2212SiC)M, (GaAs)N\/(Ge2)M, (ZnSe)N\/(GaAs)M, and (ZnSe)N\/(Ge2)M wafer-scale short-period superlattices that are etched into waveguided networks of small-footprint Mach-Zehnder interferometers and micro-ring resonators to yield opto-electronic chips. The spectra of the Pockels r33 coefficient have been simulated as a function of the number of the atomic monolayers for \u201cnon-relaxed\u201d heterointerfaces. The large obtained r33 values enable the SLOI circuit platforms to offer a very favorable combination of monolithic construction, cost-effective manufacturability, high modulation\/switching speed, high information bandwidth, tiny footprint, low energy per bit, low switching voltage, near-IR-and-telecom wavelength coverage, and push-pull operation. By optimizing waveguide, clad, and electrode dimensions, we obtained very desirable values of the V\u03c0L performance metric, in the range of 0.062 to 0.275 V\u00b7cm, portending a bright future for a variety of applications, such as sensor networks or Internet of Things (IoT).<\/jats:p>","DOI":"10.3390\/s22207866","type":"journal-article","created":{"date-parts":[[2022,10,17]],"date-time":"2022-10-17T03:43:58Z","timestamp":1665978238000},"page":"7866","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":6,"title":["High-Performance Pockels Effect Modulation and Switching in Silicon-Based GaP\/Si, AlP\/Si, ZnS\/Si, AlN\/3C-SiC, GaAs\/Ge, ZnSe\/GaAs, and ZnSe\/Ge Superlattice-On-Insulator Integrated Circuits"],"prefix":"10.3390","volume":"22","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-3876-946X","authenticated-orcid":false,"given":"Francesco","family":"De Leonardis","sequence":"first","affiliation":[{"name":"Photonics Research Group, Department of Electrical and Information Engineering, Politecnico di Bari, Via Orabona 4, 70126 Bari, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7303-7056","authenticated-orcid":false,"given":"Richard","family":"Soref","sequence":"additional","affiliation":[{"name":"Department of Engineering, University of Massachusetts at Boston, Boston, MA 02125, USA"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2022,10,16]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Soref, R., Shastri, B.J., and Tait, A.N. (2022). The Silicon-Based XOI Wafer: The Most General Electronics-Photonics Platform for Computing, Sensing, and Communications. IEEE J. Sel. Top. Quantum Electron., 1\u20139.","DOI":"10.1109\/JSTQE.2022.3211310"},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"100011","DOI":"10.1016\/j.chip.2022.100011","article-title":"Classical and quantum photonic sources based upon a nonlinear GaP\/Si-superlattice micro-ring resonator","volume":"1","author":"Soref","year":"2022","journal-title":"Chip"},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"5646","DOI":"10.1109\/JLT.2022.3177848","article-title":"Harmonic Generation in GaP\/Si and GaP\/AlP Superlattice-based Waveguides","volume":"40","author":"Soref","year":"2022","journal-title":"IEEE J. Lightwave Technol."},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"013101","DOI":"10.1063\/1.5124828","article-title":"Monolayer GaN excitonic deep ultraviolet light emitting diodes","volume":"116","author":"Wu","year":"2020","journal-title":"Appl. Phys. Lett."},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"488","DOI":"10.1126\/science.1092508","article-title":"Ferroelectricity at the Nanoscale: Local Polarization in Oxide Thin Films and Heterostructures","volume":"303","author":"Ahnk","year":"2004","journal-title":"Science"},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"301","DOI":"10.1016\/j.jcrysgro.2004.06.033","article-title":"Arsenic cross-contamination in GaSb\/InAs superlattices","volume":"270","author":"Jackson","year":"2004","journal-title":"J. Cryst. Growth"},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"030803","DOI":"10.1116\/6.0000802","article-title":"Heterovalent semiconductor structures and devices grown by molecular beam epitaxy","volume":"39","author":"Zhang","year":"2021","journal-title":"J. Vac. Sci. Technol."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"2959","DOI":"10.1109\/JLT.2022.3143169","article-title":"Efficient Second Harmonic Generation in Si-GaP Asymmetric Coupled-Quantum Well Waveguides","volume":"40","author":"Soref","year":"2022","journal-title":"IEEE J. Lightwave Technol."},{"key":"ref_9","doi-asserted-by":"crossref","unstructured":"Czornomaz, L., and Abel, S. (2022, January 6\u201310). BTO-enhanced silicon photonics\u2013a scalable PIC platform with ultra-efficient electro-optical modulation. Proceedings of the Optical Fiber Communication Conference (OFC), San Diego, CA, USA.","DOI":"10.1364\/OFC.2022.Th1J.1"},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"012501","DOI":"10.1088\/2515-7647\/ac1ef4","article-title":"2022 roadmap on integrated quantum photonics","volume":"4","author":"Moody","year":"2022","journal-title":"J. Phys. Photonics"},{"key":"ref_11","unstructured":"Boyd, R.W. (2002). Nonlinear Optics, Academic Press. [3rd ed.]."},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"263","DOI":"10.1016\/B978-0-12-002903-7.50011-4","article-title":"Electrooptical and Nonlinear Optical Properties of Crystals","volume":"3","author":"Wemple","year":"1972","journal-title":"Appl. Solid State Sci."},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"8692","DOI":"10.1021\/jp300855q","article-title":"Density Functional Theory Predictions of the Nonlinear Optical Properties in \u03b1-Quartz-type Germanium Dioxide","volume":"116","author":"Hermet","year":"2012","journal-title":"J. Phys. Chem. C"},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"222","DOI":"10.1016\/j.cplett.2004.08.120","article-title":"A theoretical model to calculate linear electro-optic effect in crystals","volume":"397","author":"Chen","year":"2004","journal-title":"Chem. Phys. Lett."},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"15500","DOI":"10.1103\/PhysRevB.47.15500","article-title":"Tight-binding representation of the optical matrix elements: Theory and applications","volume":"47","author":"Voon","year":"1993","journal-title":"Phys. Rev. B"},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"4940","DOI":"10.1103\/PhysRevB.51.4940","article-title":"Electromagnetic fields and dielectric response in empirical tight-binding theory","volume":"51","author":"Graf","year":"1995","journal-title":"Phys. Rev. B"},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"11070","DOI":"10.1038\/s41598-018-29288-8","article-title":"Tight-binding model for optoelectronic properties of pentagraphene nanostructures","volume":"8","author":"Bravo","year":"2018","journal-title":"Sci. Rep."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"035411","DOI":"10.1103\/PhysRevB.98.035411","article-title":"Hybrid k-p-tight binding model for subbands and infrared intersubband optics in few-layer films of transition metal dichalcogenides: MoS2, MoSe2, WS2, and WSe2","volume":"98","author":"Danovich","year":"2018","journal-title":"Phys. Rev. B"},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"3400114","DOI":"10.1109\/JSTQE.2017.2779869","article-title":"Compact Lithium Niobate Electrooptic Modulators","volume":"24","author":"Rao","year":"2018","journal-title":"IEEE J. Sel. Top. Quantum Electron."},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"1547","DOI":"10.1364\/OE.26.001547","article-title":"Nanophotonic lithium niobate electro-optic modulators","volume":"26","author":"Wang","year":"2018","journal-title":"Opt. Express"},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"021311","DOI":"10.1063\/5.0083083","article-title":"Pockels modulation in integrated nanophotonics","volume":"9","author":"Thomaschewski","year":"2022","journal-title":"Appl. Phys. Rev."},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"2238","DOI":"10.1116\/1.585727","article-title":"Valence band offset in ZnS layers on Si(111) grown by molecular beam epitaxy","volume":"9","author":"Maierhofer","year":"1991","journal-title":"J. Vac. Sci. Technol."},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"075315","DOI":"10.1103\/PhysRevB.91.075315","article-title":"Chemical trends of stability and band alignment of lattice-matched II-VI\/III-V semiconductor interfaces","volume":"91","author":"Deng","year":"2015","journal-title":"Phys. Rev. B"},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"1666","DOI":"10.1116\/1.590807","article-title":"Use of ultrathin ZnSe dipole layers for band offset engineering at Ge and Si homo\/heterojunctions","volume":"17","author":"Wilks","year":"1999","journal-title":"J. Vac. Sci. Technol."},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"011206","DOI":"10.1116\/1.4770070","article-title":"Structural, morphological, and band alignment properties of GaAs\/Ge\/GaAs heterostructures on (100), (110), and (111) A GaAs substrates","volume":"31","author":"Hudait","year":"2013","journal-title":"J. Vac. Sci. Technol."},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"R7418","DOI":"10.1103\/PhysRevB.55.R7418","article-title":"Band discontinuities in zinc-blende and wurtzite AlN\/SiC heterostructures","volume":"55","author":"Ferrara","year":"1997","journal-title":"Phys. Rev. B"}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/22\/20\/7866\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T00:55:18Z","timestamp":1760144118000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/22\/20\/7866"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,10,16]]},"references-count":26,"journal-issue":{"issue":"20","published-online":{"date-parts":[[2022,10]]}},"alternative-id":["s22207866"],"URL":"https:\/\/doi.org\/10.3390\/s22207866","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2022,10,16]]}}}