{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,17]],"date-time":"2026-06-17T21:37:03Z","timestamp":1781732223445,"version":"3.54.5"},"reference-count":28,"publisher":"MDPI AG","issue":"23","license":[{"start":{"date-parts":[[2022,11,28]],"date-time":"2022-11-28T00:00:00Z","timestamp":1669593600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["52007084"],"award-info":[{"award-number":["52007084"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["BK20190470"],"award-info":[{"award-number":["BK20190470"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100004608","name":"Natural Science Foundation of Jiangsu Province","doi-asserted-by":"publisher","award":["52007084"],"award-info":[{"award-number":["52007084"]}],"id":[{"id":"10.13039\/501100004608","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100004608","name":"Natural Science Foundation of Jiangsu Province","doi-asserted-by":"publisher","award":["BK20190470"],"award-info":[{"award-number":["BK20190470"]}],"id":[{"id":"10.13039\/501100004608","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>The integrated device for energy supply and sensing (IDESS) is a potential candidate for relieving the energy and space burdens caused by the rising integration degrees of microsystems. In this article, we propose a force sensor based on an interdigital supercapacitor (IDTSC). The capacitance and internal resistance of the IDTSC change under external loads, resulting in a transient current fluctuation at a constant bias voltage, which can be used to sense external force\/acceleration. The IDTSC showed a specific energy and specific power of 4.16 Wh\/kg and 22.26 W\/kg (at 0.1 A\/g), respectively, which could maintain an essential energy supply. According to the simulation analysis, the designed IDTSC\u2019s current response exhibited good linearity with the external force. In addition, benefiting from its light weight and the applied gel electrolytes, the IDTSC showed good high-g impact sensing performance (from 9.9 \u00d7 103\u00d7 g to 3.2 \u00d7 104\u00d7 g). This work demonstrated the feasibility of realizing an integrated energy supply and force-sensing device by empowering energy storage devices with sensing capabilities.<\/jats:p>","DOI":"10.3390\/s22239268","type":"journal-article","created":{"date-parts":[[2022,11,29]],"date-time":"2022-11-29T02:09:58Z","timestamp":1669687798000},"page":"9268","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Design and Fabrication of Interdigital Supercapacitors as Force\/Acceleration Sensors"],"prefix":"10.3390","volume":"22","author":[{"given":"Jue","family":"Huang","sequence":"first","affiliation":[{"name":"Department of Precision Instrument, Tsinghua University, Beijing 100084, China"},{"name":"Beijing Advanced Innovation Center for Integrated Circuits, Beijing 100084, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5729-798X","authenticated-orcid":false,"given":"Keren","family":"Dai","sequence":"additional","affiliation":[{"name":"ZNDY of Ministerial Key Laboratory, School of Mechanical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yajiang","family":"Yin","sequence":"additional","affiliation":[{"name":"Department of Precision Instrument, Tsinghua University, Beijing 100084, China"},{"name":"Beijing Advanced Innovation Center for Integrated Circuits, Beijing 100084, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhaorong","family":"Chen","sequence":"additional","affiliation":[{"name":"Department of Precision Instrument, Tsinghua University, Beijing 100084, China"},{"name":"Beijing Advanced Innovation Center for Integrated Circuits, Beijing 100084, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zheng","family":"You","sequence":"additional","affiliation":[{"name":"Department of Precision Instrument, Tsinghua University, Beijing 100084, China"},{"name":"Beijing Advanced Innovation Center for Integrated Circuits, Beijing 100084, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaofeng","family":"Wang","sequence":"additional","affiliation":[{"name":"Department of Precision Instrument, Tsinghua University, Beijing 100084, China"},{"name":"Beijing Advanced Innovation Center for Integrated Circuits, Beijing 100084, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2022,11,28]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Kim, S., Tentzeris, M.M., and Georgiadis, A. 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