{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,19]],"date-time":"2026-05-19T20:24:43Z","timestamp":1779222283360,"version":"3.51.4"},"reference-count":52,"publisher":"MDPI AG","issue":"23","license":[{"start":{"date-parts":[[2022,11,30]],"date-time":"2022-11-30T00:00:00Z","timestamp":1669766400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"National Natural Science Foundation of China (NSFC)","award":["92164106"],"award-info":[{"award-number":["92164106"]}]},{"name":"National Natural Science Foundation of China (NSFC)","award":["61874094"],"award-info":[{"award-number":["61874094"]}]},{"name":"National Natural Science Foundation of China (NSFC)","award":["62090034"],"award-info":[{"award-number":["62090034"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Charge-coupled devices (CCD) allow imaging by photodetection, charge integration, and serial transfer of the stored charge packets from multiple pixels to the readout node. The functionality of CCD can be extended to the non-destructive and in-situ readout of the integrated charges by replacing metallic electrodes with graphene in the metal-oxide-semiconductors (MOS) structure of a CCD pixel. The electrostatic capacitive coupling of graphene with the substrate allows the Fermi level tuning that reflects the integrated charge density in the depletion well. This work demonstrates the in-situ monitoring of the serial charge transfer and interpixel transfer losses in a reciprocating manner between two adjacent Gr-Si CCD pixels by benefitting the electrostatic and gate-to-gate couplings. We achieved the maximum charge transfer efficiency (CTE) of 92.4%, which is mainly decided by the inter-pixel distance, phase clock amplitudes, switching slopes, and density of surface defects. The discussion on overcoming transfer losses and improving CTE by realizing a graphene-electron multiplication CCD is also presented. The proof of the concept of the in-situ readout of the out-of-plane avalanche in a single Gr-Si CCD pixel is also demonstrated, which can amplify the photo packet in a pre-transfer manner.<\/jats:p>","DOI":"10.3390\/s22239341","type":"journal-article","created":{"date-parts":[[2022,11,30]],"date-time":"2022-11-30T09:18:36Z","timestamp":1669799916000},"page":"9341","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":9,"title":["In-Situ Monitoring of Reciprocal Charge Transfer and Losses in Graphene-Silicon CCD Pixels"],"prefix":"10.3390","volume":"22","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-9558-0946","authenticated-orcid":false,"given":"Munir","family":"Ali","sequence":"first","affiliation":[{"name":"School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yunfan","family":"Dong","sequence":"additional","affiliation":[{"name":"School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5468-2623","authenticated-orcid":false,"given":"Jianhang","family":"Lv","sequence":"additional","affiliation":[{"name":"School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hongwei","family":"Guo","sequence":"additional","affiliation":[{"name":"School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Muhammad","family":"Abid Anwar","sequence":"additional","affiliation":[{"name":"School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Feng","family":"Tian","sequence":"additional","affiliation":[{"name":"School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1374-4987","authenticated-orcid":false,"given":"Khurram","family":"Shahzad","sequence":"additional","affiliation":[{"name":"School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Wei","family":"Liu","sequence":"additional","affiliation":[{"name":"School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Bin","family":"Yu","sequence":"additional","affiliation":[{"name":"School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4519-581X","authenticated-orcid":false,"given":"Srikrishna Chanakya","family":"Bodepudi","sequence":"additional","affiliation":[{"name":"School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yang","family":"Xu","sequence":"additional","affiliation":[{"name":"School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2022,11,30]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"18","DOI":"10.1109\/MSPEC.1971.5218282","article-title":"Charge- Coupled Devices-a New Approach to Mis Device Structures","volume":"8","author":"Boyle","year":"1971","journal-title":"IEEE Spectr."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"433","DOI":"10.1016\/j.mejo.2005.07.002","article-title":"Review of CMOS Image Sensors","volume":"37","author":"Bigas","year":"2006","journal-title":"Microelectron. 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