{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,24]],"date-time":"2026-06-24T07:45:45Z","timestamp":1782287145769,"version":"3.54.5"},"reference-count":22,"publisher":"MDPI AG","issue":"23","license":[{"start":{"date-parts":[[2022,12,1]],"date-time":"2022-12-01T00:00:00Z","timestamp":1669852800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"Beijing Smartchip Microelectronics Technology Co., Ltd.","award":["2021Z087"],"award-info":[{"award-number":["2021Z087"]}]},{"name":"2021 1st Key Science and Technology Program of Ningbo City","award":["2021Z087"],"award-info":[{"award-number":["2021Z087"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>This article presents an energy-efficient BJT-based temperature sensor. The output of sensing front-ends is modulated by employing an incremental \u0394-\u03a3 ADC as a readout interface. The cascoded floating-inverter-based dynamic amplifier (FIA) is used as the integrator instead of the conventional operational transconductance amplifier (OTA) to achieve a low power consumption. To enhance the accuracy, chopping and dynamic element matching (DEM) are applied to eliminate the component mismatch error while \u03b2-compensation resistor and optimized bias current are used to minimize the effect of \u03b2 variation. Fabricated in a standard 180-nm CMOS process, this sensor has an active area of 0.13 mm2. While dissipating only 45.7 \u03bcW in total, the sensor achieves an inaccuracy of \u00b10.8 \u00b0C (3\u03c3) from \u221250 \u00b0C to 150 \u00b0C after one-point calibration.<\/jats:p>","DOI":"10.3390\/s22239381","type":"journal-article","created":{"date-parts":[[2022,12,2]],"date-time":"2022-12-02T03:28:04Z","timestamp":1669951684000},"page":"9381","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":12,"title":["An Energy-Efficient BJT-Based Temperature Sensor with \u00b10.8 \u00b0C (3\u03c3) Inaccuracy from \u221250 to 150 \u00b0C"],"prefix":"10.3390","volume":"22","author":[{"given":"Chuyun","family":"Qin","sequence":"first","affiliation":[{"name":"Institute of VLSI Design, Zhejiang University, Hangzhou 310027, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhenyan","family":"Huang","sequence":"additional","affiliation":[{"name":"Institute of VLSI Design, Zhejiang University, Hangzhou 310027, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yuyan","family":"Liu","sequence":"additional","affiliation":[{"name":"Institute of VLSI Design, Zhejiang University, Hangzhou 310027, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jiping","family":"Li","sequence":"additional","affiliation":[{"name":"Beijing Smartchip Microelectronics Technology Company Limited, Beijing 100192, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ling","family":"Lin","sequence":"additional","affiliation":[{"name":"Beijing Smartchip Microelectronics Technology Company Limited, Beijing 100192, China"},{"name":"Vango Technologies Inc., Hangzhou 310053, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Nianxiong","family":"Tan","sequence":"additional","affiliation":[{"name":"Institute of VLSI Design, Zhejiang University, Hangzhou 310027, China"},{"name":"Beijing Smartchip Microelectronics Technology Company Limited, Beijing 100192, China"},{"name":"Vango Technologies Inc., Hangzhou 310053, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4531-6645","authenticated-orcid":false,"given":"Xiaopeng","family":"Yu","sequence":"additional","affiliation":[{"name":"Institute of VLSI Design, Zhejiang University, Hangzhou 310027, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2022,12,1]]},"reference":[{"key":"ref_1","unstructured":"(2022, April 01). 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II Express Briefs"}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/22\/23\/9381\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T01:32:09Z","timestamp":1760146329000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/22\/23\/9381"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,12,1]]},"references-count":22,"journal-issue":{"issue":"23","published-online":{"date-parts":[[2022,12]]}},"alternative-id":["s22239381"],"URL":"https:\/\/doi.org\/10.3390\/s22239381","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2022,12,1]]}}}