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Instrument capabilities (\u00b1200 V, 200 mA, and 200 ns order response) are validated with a LiTaO3 single crystal whose switching kinetics are well known. 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Rev."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"506","DOI":"10.1143\/JPSJ.31.506","article-title":"Note on Ferroelectric Domain Switching","volume":"31","author":"Ishibashi","year":"1971","journal-title":"J. Phys. Soc. Jpn."},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"57","DOI":"10.1080\/10584589508012906","article-title":"A Theory of D-E Hysteresis Loop\u2014Application of Avrami Model","volume":"9","author":"Ishibashi","year":"1995","journal-title":"Integr. Ferroelectr."},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"214109","DOI":"10.1103\/PhysRevB.66.214109","article-title":"Non-Kolmogorov-Avrami Switching Kinetics in Ferroelectric Thin Films","volume":"66","author":"Tagantsev","year":"2002","journal-title":"Phys. Rev. B"},{"key":"ref_5","unstructured":"Shur, V.Y. (2007). Kinetics of Ferroelectric Domains: Application of General Approach to LiNbO3 and LiTaO3. Frontiers of Ferroelectricity: A Special Issue of the Journal of Materials Science, Springer."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"269","DOI":"10.1103\/PhysRev.35.269","article-title":"Rochelle Salt as a Dielectric","volume":"35","author":"Sawyer","year":"1930","journal-title":"Phys. Rev."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"1690","DOI":"10.1063\/1.1657832","article-title":"Spontaneous Polarization Measurements in Several Ferroelectric Oxides Using a Pulsed-Field Method","volume":"40","author":"Camlibel","year":"1969","journal-title":"J. Appl. Phys."},{"key":"ref_8","unstructured":"Spang, M., and Hofstoetter, N. (2017, January 16\u201318). Evaluation of Current Measurement Accuracy for a Power Module with Integrated Shunt Resistors. Proceedings of the PCIM Europe 2017; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremburg, Germany."},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"258","DOI":"10.1109\/JSEN.2013.2282624","article-title":"Low-Noise, High-Gain Transimpedance Amplifier Integrated with SiAPD for Low-Intensity near-Infrared Light Detection","volume":"14","author":"Kamrani","year":"2014","journal-title":"IEEE Sens. J."},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"113109","DOI":"10.1063\/1.5004561","article-title":"Noise Spectra in Balanced Optical Detectors Based on Transimpedance Amplifiers","volume":"88","author":"Masalov","year":"2017","journal-title":"Rev. Sci. Instrum."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"012902","DOI":"10.1063\/5.0012635","article-title":"Barkhausen Noise Analysis of Thin Film Ferroelectrics","volume":"117","author":"Yazawa","year":"2020","journal-title":"Appl. Phys. Lett."},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"114103","DOI":"10.1063\/1.5084945","article-title":"AlScN: A III-V Semiconductor Based Ferroelectric","volume":"125","author":"Fichtner","year":"2019","journal-title":"J. Appl. Phys."},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"SBBA05","DOI":"10.35848\/1347-4065\/abef15","article-title":"On the Thickness Scaling of Ferroelectricity in Al0.78Sc0.22N Films","volume":"60","author":"Tsai","year":"2021","journal-title":"Jpn. J. Appl. Phys."},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"162903","DOI":"10.1063\/5.0043613","article-title":"Reduced Coercive Field in Epitaxial Thin Film of Ferroelectric Wurtzite Al0.7Sc0.3N","volume":"118","author":"Yazawa","year":"2021","journal-title":"Appl. Phys. Lett."},{"key":"ref_15","doi-asserted-by":"crossref","unstructured":"Fichtner, S., Lofink, F., Wagner, B., Schonweger, G., Kreutzer, T.N., Petraru, A., and Kohlstedt, H. (2020, January 19\u201323). Ferroelectricity in AlScN: Switching, Imprint and Sub-150 Nm Films. Proceedings of the IFCS-ISAF 2020\u2014Joint Conference of the IEEE International Frequency Control Symposium and IEEE International Symposium on Applications of Ferroelectrics, Keystone, CO, USA.","DOI":"10.1109\/IFCS-ISAF41089.2020.9234883"},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"114103","DOI":"10.1063\/5.0015281","article-title":"Effects of Deposition Conditions on the Ferroelectric Properties of (Al1\u2212XScx)N Thin Films","volume":"128","author":"Yasuoka","year":"2020","journal-title":"J. Appl. Phys."},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"042902","DOI":"10.1063\/5.0098979","article-title":"A Landau\u2013Devonshire Analysis of Strain Effects on Ferroelectric Al1\u2212xScxN","volume":"121","author":"Yazawa","year":"2022","journal-title":"Appl. Phys. Lett."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"17557","DOI":"10.1039\/D2TC02682A","article-title":"Local Chemical Origin of Ferroelectric Behavior in Wurtzite Nitrides","volume":"10","author":"Yazawa","year":"2022","journal-title":"J. Mater. Chem. C"},{"key":"ref_19","unstructured":"Keithley (2022, December 06). 4200A-SCS Parameter Analyzer; 1KW-60780-6 Datasheet. Available online: https:\/\/www.tek.com\/en\/datasheet\/4200a-scs-parameter-analyzer."},{"key":"ref_20","unstructured":"Keithley (2022, December 06). Series 2400 SourceMeter\u00ae SMU Instruments. 1KW-2798-4 Datasheet. Available online: https:\/\/www.tek.com\/en\/datasheet\/series-2400-sourcemeter-instruments."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"021915","DOI":"10.1063\/1.4788728","article-title":"Influence of Scandium Concentration on Power Generation Figure of Merit of Scandium Aluminum Nitride Thin Films","volume":"102","author":"Akiyama","year":"2013","journal-title":"Appl. Phys. Lett."},{"key":"ref_22","unstructured":"Texas Instruments (2022, December 06). OPA657 1.6-GHz, Low-Noise, FET-Input Operational Amplifier; SBOS197F Datasheet. Available online: https:\/\/www.ti.com\/product\/OPA657."},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"102903","DOI":"10.1063\/1.2041830","article-title":"Metalorganic Chemical Vapor Deposition of Lead-Free Ferroelectric BiFeO3 Films for Memory Applications","volume":"87","author":"Yang","year":"2005","journal-title":"Appl. Phys. Lett."},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"0616011","DOI":"10.1143\/APEX.1.061601","article-title":"Evaluation of Electrical Properties of Leaky BiFeO3 Films in High Electric Field Region by High-Speed Positive-up-Negative-down Measurement","volume":"1","author":"Naganuma","year":"2008","journal-title":"Appl. Phys. Express"},{"key":"ref_25","unstructured":"Buzuayene, M. (2022, December 06). Rise Time vs. Bandwidth and Applications. Interference Technology. Available online: https:\/\/interferencetechnology.com\/Rise-Time-vs-Bandwidth-and-Applications\/."},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"445","DOI":"10.1063\/1.368047","article-title":"Kinetics of Phase Transformations in Real Finite Systems: Application to Switching in Ferroelectrics","volume":"84","author":"Shur","year":"1998","journal-title":"J. Appl. Phys."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/22\/24\/9659\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T01:37:26Z","timestamp":1760146646000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/22\/24\/9659"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,12,9]]},"references-count":26,"journal-issue":{"issue":"24","published-online":{"date-parts":[[2022,12]]}},"alternative-id":["s22249659"],"URL":"https:\/\/doi.org\/10.3390\/s22249659","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2022,12,9]]}}}