{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,7]],"date-time":"2026-05-07T07:00:34Z","timestamp":1778137234126,"version":"3.51.4"},"reference-count":90,"publisher":"MDPI AG","issue":"24","license":[{"start":{"date-parts":[[2022,12,14]],"date-time":"2022-12-14T00:00:00Z","timestamp":1670976000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"Ministry of Science and Higher Education of the Russian Federation","award":["075-03-2022-107"],"award-info":[{"award-number":["075-03-2022-107"]}]},{"name":"Ministry of Science and Higher Education of the Russian Federation","award":["0714-2021-0007"],"award-info":[{"award-number":["0714-2021-0007"]}]},{"name":"IGIC RAS","award":["075-03-2022-107"],"award-info":[{"award-number":["075-03-2022-107"]}]},{"name":"IGIC RAS","award":["0714-2021-0007"],"award-info":[{"award-number":["0714-2021-0007"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>The atmospheric pressure solvothermal (APS) synthesis of nanocrystalline SnO2 (average size of coherent scattering regions (CSR)\u20147.5 \u00b1 0.6 nm) using tin acetylacetonate as a precursor was studied. The resulting nanopowder was used as a functional ink component in microextrusion printing of a tin dioxide thick film on the surface of a Pt\/Al2O3\/Pt chip. Synchronous thermal analysis shows that the resulting semiproduct is transformed completely into tin dioxide nanopowder at 400 \u00b0C within 1 h. The SnO2 powder and the resulting film were shown to have a cassiterite-type structure according to X-ray diffraction analysis, and IR spectroscopy was used to establish the set of functional groups in the material composition. The microstructural features of the tin dioxide powder were analyzed using scanning (SEM) and transmission (TEM) electron microscopy: the average size of the oxide powder particles was 8.2 \u00b1 0.7 nm. Various atomic force microscopy (AFM) techniques were employed to investigate the topography of the oxide film and to build maps of surface capacitance and potential distribution. The temperature dependence of the electrical conductivity of the printed SnO2 film was studied using impedance spectroscopy. The chemosensory properties of the formed material when detecting H2, CO, NH3, C6H6, C3H6O and C2H5OH, including at varying humidity, were also examined. It was demonstrated that the obtained SnO2 film has an increased sensitivity (the sensory response value was 1.4\u201363.5) and selectivity for detection of 4\u2013100 ppm C2H5OH at an operating temperature of 200 \u00b0C.<\/jats:p>","DOI":"10.3390\/s22249800","type":"journal-article","created":{"date-parts":[[2022,12,14]],"date-time":"2022-12-14T03:21:52Z","timestamp":1670988112000},"page":"9800","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":7,"title":["Atmospheric Pressure Solvothermal Synthesis of Nanoscale SnO2 and Its Application in Microextrusion Printing of a Thick-Film Chemosensor Material for Effective Ethanol Detection"],"prefix":"10.3390","volume":"22","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-7060-043X","authenticated-orcid":false,"given":"Nikita A.","family":"Fisenko","sequence":"first","affiliation":[{"name":"Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky pr., Moscow 119991, Russia"},{"name":"Higher Chemical College of the Russian Academy of Sciences, D. Mendeleev University of Chemical Technology of Russia, 9 Miusskaya sq., Moscow 125047, Russia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ivan A.","family":"Solomatov","sequence":"additional","affiliation":[{"name":"Basic Department of Inorganic Chemistry and Materials Science, National Research University \u201cHigher School of Economics\u201d, 20 Myasnsitskaya str., Moscow 101978, Russia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Nikolay P.","family":"Simonenko","sequence":"additional","affiliation":[{"name":"Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky pr., Moscow 119991, Russia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4865-3054","authenticated-orcid":false,"given":"Artem S.","family":"Mokrushin","sequence":"additional","affiliation":[{"name":"Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky pr., Moscow 119991, Russia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1943-5939","authenticated-orcid":false,"given":"Philipp Yu.","family":"Gorobtsov","sequence":"additional","affiliation":[{"name":"Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky pr., Moscow 119991, Russia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8130-8503","authenticated-orcid":false,"given":"Tatiana L.","family":"Simonenko","sequence":"additional","affiliation":[{"name":"Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky pr., Moscow 119991, Russia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1130-4969","authenticated-orcid":false,"given":"Ivan A.","family":"Volkov","sequence":"additional","affiliation":[{"name":"Moscow Institute of Physics and Technology, National Research University, 9 Institutskiy per., Dolgoprudny 141701, Russia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8112-1821","authenticated-orcid":false,"given":"Elizaveta P.","family":"Simonenko","sequence":"additional","affiliation":[{"name":"Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky pr., Moscow 119991, Russia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Nikolay T.","family":"Kuznetsov","sequence":"additional","affiliation":[{"name":"Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky pr., Moscow 119991, Russia"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2022,12,14]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"3169","DOI":"10.1021\/acsami.8b16443","article-title":"Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin (IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices","volume":"11","author":"Mai","year":"2019","journal-title":"ACS Appl. 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