{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,18]],"date-time":"2026-03-18T22:24:37Z","timestamp":1773872677142,"version":"3.50.1"},"reference-count":28,"publisher":"MDPI AG","issue":"4","license":[{"start":{"date-parts":[[2023,2,10]],"date-time":"2023-02-10T00:00:00Z","timestamp":1675987200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"National Key R&amp;D Program of China","award":["2021YFF0502600"],"award-info":[{"award-number":["2021YFF0502600"]}]},{"name":"National Key R&amp;D Program of China","award":["11922507"],"award-info":[{"award-number":["11922507"]}]},{"name":"National Key R&amp;D Program of China","award":["12050005"],"award-info":[{"award-number":["12050005"]}]},{"name":"National Key R&amp;D Program of China","award":["1205U2267211"],"award-info":[{"award-number":["1205U2267211"]}]},{"name":"National Natural Science Foundation of China","award":["2021YFF0502600"],"award-info":[{"award-number":["2021YFF0502600"]}]},{"name":"National Natural Science Foundation of China","award":["11922507"],"award-info":[{"award-number":["11922507"]}]},{"name":"National Natural Science Foundation of China","award":["12050005"],"award-info":[{"award-number":["12050005"]}]},{"name":"National Natural Science Foundation of China","award":["1205U2267211"],"award-info":[{"award-number":["1205U2267211"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Perovskite CsPbBr3 semiconductors exhibit unusually high defect tolerance leading to outstanding and unique optoelectronic properties, demonstrating strong potential for \u03b3-radiation and X-ray detection at room temperature. However, the total dose effects of the perovskite CsPbBr3 must be considered when working in a long-term radiation environment. In this work, the Schottky type of perovskite CsPbBr3 detector was fabricated. Their electrical characteristics and \u03b3-ray response were investigated before and after 60Co \u03b3 ray irradiation with 100 and 200 krad (Si) doses. The \u03b3-ray response of the Schottky-type planar CsPbBr3 detector degrades significantly with the increase in total dose. At the total dose of 200 krad(Si), the spectral resolving ability to \u03b3-ray response of the CsPbBr3 detector has disappeared. However, with annealing at room temperature for one week, the device\u2019s performance was partially recovered. Therefore, these results indicate that the total dose effects strongly influence the detector performance of the perovskite CsPbBr3 semiconductor. Notably, it is concluded that the radiation-induced defects are not permanent, which could be mitigated even at room temperature. We believe this work could guide the development of perovskite detectors, especially under harsh radiation conditions.<\/jats:p>","DOI":"10.3390\/s23042017","type":"journal-article","created":{"date-parts":[[2023,2,13]],"date-time":"2023-02-13T02:14:11Z","timestamp":1676254451000},"page":"2017","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":9,"title":["The Total Ionizing Dose Effects on Perovskite CsPbBr3 Semiconductor Detector"],"prefix":"10.3390","volume":"23","author":[{"given":"Wuying","family":"Ma","sequence":"first","affiliation":[{"name":"School of Nuclear Science and Technology, Xi\u2019an Jiaotong University, No. 28, Xianning West Road, Xi\u2019an 710049, China"},{"name":"State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi\u2019an 710024, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Linyue","family":"Liu","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi\u2019an 710024, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Haoming","family":"Qin","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Radiation Medicine and Protection, Collaborative Innovation Center of Radiological Medicine of Jiangsu Higher Education Institutions, and School for Radiological and Interdisciplinary Sciences (RAD-X), Soochow University, Suzhou 215123, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Runlong","family":"Gao","sequence":"additional","affiliation":[{"name":"Sino-French Institute of Nuclear Engineering and Technology, Sun Yat-Sen University, Zhuhai 519082, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Baoping","family":"He","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi\u2019an 710024, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shilong","family":"Gou","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi\u2019an 710024, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yihui","family":"He","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Radiation Medicine and Protection, Collaborative Innovation Center of Radiological Medicine of Jiangsu Higher Education Institutions, and School for Radiological and Interdisciplinary Sciences (RAD-X), Soochow University, Suzhou 215123, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xiaoping","family":"Ouyang","sequence":"additional","affiliation":[{"name":"School of Nuclear Science and Technology, Xi\u2019an Jiaotong University, No. 28, Xianning West Road, Xi\u2019an 710049, China"},{"name":"State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi\u2019an 710024, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2023,2,10]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"103","DOI":"10.1016\/S0927-796X(01)00027-4","article-title":"Cadmium zinc telluride and its use as a nuclear radiation detector material","volume":"32","author":"Schlesinger","year":"2001","journal-title":"Mater. Sci. Eng. R Rep."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"637","DOI":"10.1063\/1.1810924","article-title":"The swift gamma-ray burst mission","volume":"727","author":"Gehrels","year":"2004","journal-title":"AIP Conf. Proc."},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"463","DOI":"10.1002\/adom.201400571","article-title":"Recent R&D trends in inorganic single-crystal scintillator materials for radiation detection","volume":"3","author":"Nikl","year":"2015","journal-title":"Adv. Opt. Mater."},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"5488","DOI":"10.1039\/C9TC00761J","article-title":"Low Temperature Synthesis of All-Inorganic Perovskite Nanocrystals for UV-Photodetectors","volume":"7","author":"Zhang","year":"2019","journal-title":"J. Mater. Chem. C."},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"2009072","DOI":"10.1002\/adfm.202009072","article-title":"High-Sensitivity Flexible X-ray Detectors based on Printed Perovskite Inks","volume":"31","author":"Ciavatti","year":"2021","journal-title":"Adv. Funct. Mater."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"2289","DOI":"10.1002\/adma.201200283","article-title":"Organic semiconducting single crystals as next generation of low-cost, room-temperature electrical X-ray detectors","volume":"24","author":"Fraboni","year":"2012","journal-title":"Adv. Mater."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"042001","DOI":"10.1088\/2515-7639\/ab336a","article-title":"Efficiency and spectral performance of narrowband organic and perovskite photodetectors: A cross-sectional review","volume":"2","author":"Pecunia","year":"2019","journal-title":"J. Phys. Mater."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"968","DOI":"10.1364\/PRJ.418450","article-title":"Lead\u2013Halide perovskites for next-generation self-powered photodetectors: A comprehensive review","volume":"9","author":"Veeramalai","year":"2021","journal-title":"Photonics Res."},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"5717","DOI":"10.1021\/acs.cgd.6b00764","article-title":"Low Temperature Solution-Grown CsPbBr3 Single Crystals and Their Characterization","volume":"16","author":"Rakita","year":"2016","journal-title":"Cryst. Growth Des."},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"217","DOI":"10.1016\/j.nima.2019.01.008","article-title":"Perovskite CsPbBr3 single crystal detector for alpha-particle spectroscopy","volume":"922","author":"He","year":"2019","journal-title":"Nucl. Instr. Meth. Phys. Res. A"},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"327","DOI":"10.1016\/j.orgel.2019.06.040","article-title":"Effects of CsPbBr3 nanocrystals concentration on electronic structure and surface composition of perovskite films","volume":"73","author":"Liu","year":"2019","journal-title":"Org. Electron."},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"6326","DOI":"10.1039\/D0TC00922A","article-title":"Perovskite CsPbBr3 crystals: Growth and applications","volume":"8","author":"Yu","year":"2020","journal-title":"J. Mater. Chem. C"},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"063505","DOI":"10.1063\/1.5134108","article-title":"Defect proliferation in CsPbBr3 crystal induced by ion migration","volume":"116","author":"Zhang","year":"2020","journal-title":"Appl. Phys. Lett."},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"235305","DOI":"10.1103\/PhysRevB.100.235305","article-title":"Carrier recombination mechanism in CsPbBr3 revealed by time-resolved photoluminescence spectroscopy","volume":"100","author":"Peters","year":"2019","journal-title":"Phys. Rev. B"},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"2722","DOI":"10.1021\/cg400645t","article-title":"Crystal Growth of the Perovskite Semiconductor CsPbBr3: A New Material for High Energy Radiation Detection","volume":"13","author":"Stoumpos","year":"2013","journal-title":"Cryst. Growth Des."},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"1609","DOI":"10.1038\/s41467-018-04073-3","article-title":"High Spectral Resolution of Gamma-rays at Room Temperature by Perovskite CsPbBr3 Single Crystals","volume":"9","author":"He","year":"2018","journal-title":"Nat. Commun."},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"1706","DOI":"10.1109\/TNS.2013.2259260","article-title":"Total Ionizing Dose Effects in MOS and Low-Dose-Rate-Sensitive Linear-Bipolar Devices","volume":"60","author":"Fleetwood","year":"2013","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"1465","DOI":"10.1109\/TNS.2017.2786140","article-title":"Evolution of total ionizing dose effects in MOS devices with Moore\u2019s law scaling","volume":"65","author":"Fleetwood","year":"2018","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"1833","DOI":"10.1109\/TNS.2008.2001040","article-title":"Radiation effects in MOS oxides","volume":"55","author":"Schwank","year":"2008","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"483","DOI":"10.1109\/TNS.2003.812927","article-title":"Total ionizing dose effects in MOS oxides and devices","volume":"50","author":"Oldham","year":"2003","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"395","DOI":"10.1016\/S0168-9002(01)01506-6","article-title":"Properties of Pt Schottky type contacts on high-resistivity CdZnTe detectors","volume":"482","author":"Bolotnikov","year":"2002","journal-title":"Nucl. Instr. Meth. Phys. Res. A"},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"517","DOI":"10.1016\/j.nima.2005.03.147","article-title":"Electrical characterization of large volume CdZnTe coplanar detectors","volume":"547","author":"Vela","year":"2005","journal-title":"Nucl. Instr. Meth. Phys. Res. A"},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"265","DOI":"10.1038\/s41467-018-07972-7","article-title":"How lasing happens in CsPbBr3 perovskite nanowires","volume":"10","author":"Schlaus","year":"2019","journal-title":"Nat. Commun."},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"36","DOI":"10.1038\/s41566-020-00727-1","article-title":"CsPbBr3 perovskite detectors with 1.4% energy resolution for high-energy \u03b3-rays","volume":"15","author":"He","year":"2021","journal-title":"Nat. Photonics."},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"1701217","DOI":"10.1126\/sciadv.1701217","article-title":"Large polarons in lead halide perovskites","volume":"3","author":"Miyata","year":"2017","journal-title":"Sci. Adv."},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"3821","DOI":"10.1364\/OL.41.003821","article-title":"Temperature-dependent excitonic photoluminescence excited by two-photon absorption in perovskite CsPbBr3 quantum dots","volume":"41","author":"Wei","year":"2016","journal-title":"Opt. Lett."},{"key":"ref_27","doi-asserted-by":"crossref","first-page":"13376","DOI":"10.1038\/s41598-017-13715-3","article-title":"Radiation Resistance of Silicon Carbide Schottky Diode Detectors in D-T Fusion Neutron Detection","volume":"7","author":"Liu","year":"2017","journal-title":"Sci. Rep."},{"key":"ref_28","doi-asserted-by":"crossref","first-page":"245","DOI":"10.1016\/j.sna.2018.07.053","article-title":"Silicon carbide PIN diode detectors used in harsh neutron irradiation","volume":"280","author":"Liu","year":"2018","journal-title":"Sens. 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