{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,24]],"date-time":"2026-04-24T23:27:28Z","timestamp":1777073248964,"version":"3.51.4"},"reference-count":29,"publisher":"MDPI AG","issue":"5","license":[{"start":{"date-parts":[[2023,2,22]],"date-time":"2023-02-22T00:00:00Z","timestamp":1677024000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100008783","name":"National Research Council of Science and Technology","doi-asserted-by":"publisher","award":["1711121944, CRC-20-01-NFRI"],"award-info":[{"award-number":["1711121944, CRC-20-01-NFRI"]}],"id":[{"id":"10.13039\/501100008783","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>We propose a wafer-type ion energy monitoring sensor (IEMS) that can measure the spatially resolved distribution of ion energy over the 150 mm plasma chamber for the in situ monitoring of the semiconductor fabrication process. The IEMS can directly be applied to the semiconductor chip production equipment without further modification of the automated wafer handling system. Thus, it can be adopted as an in situ data acquisition platform for plasma characterization inside the process chamber. To achieve ion energy measurement on the wafer-type sensor, the injected ion flux energy from the plasma sheath was converted into the induced currents on each electrode over the wafer-type sensor, and the generated currents from the ion injection were compared along the position of electrodes. The IEMS operates without problems in the plasma environment and has the same trends as the result predicted through the equation.<\/jats:p>","DOI":"10.3390\/s23052410","type":"journal-article","created":{"date-parts":[[2023,2,22]],"date-time":"2023-02-22T02:57:38Z","timestamp":1677034658000},"page":"2410","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":8,"title":["Wafer Type Ion Energy Monitoring Sensor for Plasma Diagnosis"],"prefix":"10.3390","volume":"23","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-9568-8458","authenticated-orcid":false,"given":"Chansu","family":"Han","sequence":"first","affiliation":[{"name":"Department of Electronics Engineering, Myongji University, 116 Myongjiro, Yongin 17058, Gyeonggi, Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yoonsung","family":"Koo","sequence":"additional","affiliation":[{"name":"Future Business Division, Fine Semitech Corperation, Hwaseong 18487, Gyeonggi, Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2983-9905","authenticated-orcid":false,"given":"Jaehwan","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Electronics Engineering, Myongji University, 116 Myongjiro, Yongin 17058, Gyeonggi, Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Kwangwook","family":"Choi","sequence":"additional","affiliation":[{"name":"Future Business Division, Fine Semitech Corperation, Hwaseong 18487, Gyeonggi, Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6576-690X","authenticated-orcid":false,"given":"Sangjeen","family":"Hong","sequence":"additional","affiliation":[{"name":"Department of Electronics Engineering, Myongji University, 116 Myongjiro, Yongin 17058, Gyeonggi, Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2023,2,22]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"2133","DOI":"10.1116\/1.586180","article-title":"Microscopic uniformity in plasma etching","volume":"10","author":"Gottscho","year":"1992","journal-title":"J. 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