{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,9]],"date-time":"2026-07-09T17:47:16Z","timestamp":1783619236290,"version":"3.55.0"},"reference-count":16,"publisher":"MDPI AG","issue":"5","license":[{"start":{"date-parts":[[2023,2,24]],"date-time":"2023-02-24T00:00:00Z","timestamp":1677196800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>We report on novel UVC sensors based on the floating gate (FG) discharge principle. The device operation is similar to that of EPROM non-volatile memories UV erasure, but the sensitivity to ultraviolet light is strongly increased by using single polysilicon devices of special design with low FG capacitance and long gate periphery (grilled cells). The devices were integrated without additional masks into a standard CMOS process flow featuring a UV-transparent back end. Low-cost integrated UVC solar blind sensors were optimized for implementation in UVC sterilization systems, where they provided feedback on the radiation dose sufficient for disinfection. Doses of ~10 \u00b5J\/cm2 at 220 nm could be measured in less than a second. The device can be reprogrammed up to 10,000 times and used to control ~10\u201350 mJ\/cm2 UVC radiation doses typically employed for surface or air disinfection. Demonstrators of integrated solutions comprising UV sources, sensors, logics, and communication means were fabricated. Compared with the existing silicon-based UVC sensing devices, no degradation effects that limit the targeted applications were observed. Other applications of the developed sensors, such as UVC imaging, are also discussed.<\/jats:p>","DOI":"10.3390\/s23052509","type":"journal-article","created":{"date-parts":[[2023,2,24]],"date-time":"2023-02-24T02:03:26Z","timestamp":1677204206000},"page":"2509","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["High-Sensitivity CMOS-Integrated Floating Gate-Based UVC Sensors"],"prefix":"10.3390","volume":"23","author":[{"given":"Michael","family":"Yampolsky","sequence":"first","affiliation":[{"name":"Tower Semiconductors, Migdal HaEmek 2310502, Israel"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Evgeny","family":"Pikhay","sequence":"additional","affiliation":[{"name":"Tower Semiconductors, Migdal HaEmek 2310502, Israel"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ruth","family":"Shima Edelstein","sequence":"additional","affiliation":[{"name":"Tower Semiconductors, Migdal HaEmek 2310502, Israel"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yakov","family":"Roizin","sequence":"additional","affiliation":[{"name":"Tower Semiconductors, Migdal HaEmek 2310502, Israel"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2023,2,24]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"da Silva, Y.R.S.C., Kuroda, R., and Sugawa, S. (2019). A Highly Robust Silicon Ultraviolet Selective Radiation Sensor Using Differential Spectral Response Method. Sensors, 19.","DOI":"10.3390\/s19122755"},{"key":"ref_2","unstructured":"Yamada, H., Miura, N., Okihara, M., and Hinohara, K. (2008, January 20\u201322). A UV sensor IC based on SOI technology for UV care application. Proceedings of the 2008 SICE Annual Conference, Chofu, Tokyo, Japan."},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1038\/s41598-021-85425-w","article-title":"UV-C irradiation is highly effective in inactivating SARS-CoV-2 replication","volume":"11","author":"Biasin","year":"2021","journal-title":"Sci. Rep."},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"1273","DOI":"10.1016\/j.ajic.2020.07.031","article-title":"Susceptibility of SARS-CoV-2 to UV irradiation","volume":"48","author":"Heilingloh","year":"2020","journal-title":"Am. J. Infect. 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Control"},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"175","DOI":"10.1149\/1.3117406","article-title":"Optimization of Blue\/UV Sensors Using PIN Photodiodes in Thin-Film SOI Technology","volume":"19","author":"Bulteel","year":"2009","journal-title":"ECS Trans."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"SBBL03","DOI":"10.7567\/1347-4065\/aaffc1","article-title":"A CMOS image sensor with dual pixel reset voltage for high accuracy ultraviolet light absorption spectral imaging","volume":"58","author":"Aoyagi","year":"2019","journal-title":"Jpn. J. Appl. Phys."},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"306","DOI":"10.1109\/JSTQE.2014.2319582","article-title":"Robust UV\/VUV\/EUV PureB Photodiode Detector Technology with High CMOS Compatibility","volume":"20","author":"Nanver","year":"2014","journal-title":"IEEE J. Sel. Top. Quantum Electron."},{"key":"ref_10","unstructured":"Roizin, Y., and Pikhay, E. (2013). Photovoltaic Device with Lateral P-I-N Sensitive Diodes. (8,344,468), U.S. Patent."},{"key":"ref_11","unstructured":"Roizin, Y. (2004). Complementary Non-Volatile Memory Cell. (6,788,576), U.S. Patent."},{"key":"ref_12","unstructured":"Roizin, Y., Kairys, V., Sarig, E., and Zfira, D. (2010). CMOS Inverter Based Logic Memory. (7,679,119), U.S. Patent."},{"key":"ref_13","unstructured":"Audzeyeu, M., Makarevich, Y., Shvedau, S., Belous, A., Pikhay, E., Dayan, V., and Roizin, Y. (2013). Floating Gate Inverter Type Memory Cell and Array. (8,378,407), U.S. Patent."},{"key":"ref_14","doi-asserted-by":"crossref","unstructured":"Li, G., Li, Y., Feng, P., and Wu, N. (2009, January 17\u201319). A novel single-poly floating-gate UV sensor using standard CMOS process. Proceedings of the International Symposium on Photoelectronic Detection and Imaging 2009, Beijing, China.","DOI":"10.1117\/12.836786"},{"key":"ref_15","doi-asserted-by":"crossref","unstructured":"Yampolsky, M., Pikhay, E., and Roizin, Y. (2022). Embedded UV Sensors in CMOS SOI Technology. Sensors, 22.","DOI":"10.3390\/s22030712"},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"2453","DOI":"10.1109\/JSEN.2012.2192103","article-title":"Comparative Study of Silicon-Based Ultraviolet Photodetectors","volume":"12","author":"Shi","year":"2012","journal-title":"IEEE Sensors J."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/23\/5\/2509\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,10]],"date-time":"2025-10-10T18:41:09Z","timestamp":1760121669000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/23\/5\/2509"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,2,24]]},"references-count":16,"journal-issue":{"issue":"5","published-online":{"date-parts":[[2023,3]]}},"alternative-id":["s23052509"],"URL":"https:\/\/doi.org\/10.3390\/s23052509","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2023,2,24]]}}}