{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,3]],"date-time":"2026-07-03T01:26:49Z","timestamp":1783042009549,"version":"3.54.6"},"reference-count":36,"publisher":"MDPI AG","issue":"6","license":[{"start":{"date-parts":[[2023,3,8]],"date-time":"2023-03-08T00:00:00Z","timestamp":1678233600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"University of Pitesti","award":["N42A640328"],"award-info":[{"award-number":["N42A640328"]}]},{"name":"King Mongkut\u2019s University of Technology North Bangkok","award":["N42A640328"],"award-info":[{"award-number":["N42A640328"]}]},{"name":"International Research Partnership \u201cElectrical Engineering-Thai French Research Center (EE-TFRC)\u201d","award":["N42A640328"],"award-info":[{"award-number":["N42A640328"]}]},{"name":"Universit\u00e9 de Lorraine","award":["N42A640328"],"award-info":[{"award-number":["N42A640328"]}]},{"DOI":"10.13039\/501100004704","name":"National Research Council of Thailand (NRCT)","doi-asserted-by":"publisher","award":["N42A640328"],"award-info":[{"award-number":["N42A640328"]}],"id":[{"id":"10.13039\/501100004704","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>In this article, the performance of n-type junctionless (JL) double-gate (DG) MOSFET-based biosensors with and without gate stack (GS) has been studied. Here, the dielectric modulation (DM) method is applied to detect biomolecules in the cavity. The sensitivity of n-type JL-DM-DG-MOSFET and n-type JL-DM-GSDG-MOSFET-based biosensors have also been evaluated. The sensitivity (\u0394Vth) improved in JL-DM-GSDG MOSFET\/JL-DM-DG-MOSFET-based biosensors for neutral\/charged biomolecules is 116.66%\/66.66% and 1165.78%\/978.94%, respectively, compared with the previously reported results. The electrical detection of biomolecules is validated using the ATLAS device simulator. The noise and analog\/RF parameters are compared between both biosensors. A lower threshold voltage is observed in the GSDG-MOSFET-based biosensor. The Ion\/Ioff ratio is higher for DG-MOSFET-based biosensors. The proposed GSDG-MOSFET-based biosensor demonstrates higher sensitivity than the DG-MOSFET-based biosensor. The GSDG-MOSFET-based biosensor is suitable for low-power, high-speed, and high sensitivity applications.<\/jats:p>","DOI":"10.3390\/s23062953","type":"journal-article","created":{"date-parts":[[2023,3,9]],"date-time":"2023-03-09T02:01:47Z","timestamp":1678327307000},"page":"2953","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":17,"title":["A Novel Dielectric Modulated Gate-Stack Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor-Based Sensor for Detecting Biomolecules"],"prefix":"10.3390","volume":"23","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-3708-5912","authenticated-orcid":false,"given":"Dibyendu","family":"Chowdhury","sequence":"first","affiliation":[{"name":"Department of ECE, Haldia Institute of Technology, Haldia 721657, India"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Bishnu Prasad","family":"De","sequence":"additional","affiliation":[{"name":"School of Electronics Engineering, KIIT University, Bhubaneswar 751024, India"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0878-7405","authenticated-orcid":false,"given":"Bhargav","family":"Appasani","sequence":"additional","affiliation":[{"name":"School of Electronics Engineering, KIIT University, Bhubaneswar 751024, India"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3480-9460","authenticated-orcid":false,"given":"Navaneet Kumar","family":"Singh","sequence":"additional","affiliation":[{"name":"University College of Engineering and Technology (UCET), Vinoba Bhave University (VBU), Hazaribag 825301, India"},{"name":"Department of ECE, NIT Durgapur, Durgapur 713209, India"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Rajib","family":"Kar","sequence":"additional","affiliation":[{"name":"Department of ECE, NIT Durgapur, Durgapur 713209, India"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Durbadal","family":"Mandal","sequence":"additional","affiliation":[{"name":"Department of ECE, NIT Durgapur, Durgapur 713209, India"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9311-7598","authenticated-orcid":false,"given":"Nicu","family":"Bizon","sequence":"additional","affiliation":[{"name":"Faculty of Electronics, Communication and Computers, University of Pitesti, 110040 Pitesti, Romania"},{"name":"Doctoral School, University Politehnica of Bucharest, 060042 Bucharest, Romania"},{"name":"ICSI Energy, National Research and Development Institute for Cryogenic and Isotopic Technologies, 240050 Ramnicu Valcea, Romania"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1453-4236","authenticated-orcid":false,"given":"Phatiphat","family":"Thounthong","sequence":"additional","affiliation":[{"name":"Renewable Energy Research Centre (RERC), Department of Teacher Training in Electrical Engineering, Faculty of Technical Education, King Mongkut\u2019s University of Technology North Bangkok, Bangkok 10800, Thailand"},{"name":"Group of Research in Electrical Engineering of Nancy (GREEN), University of Lorraine-GREEN, 54000 Nancy, France"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2023,3,8]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"2936","DOI":"10.1109\/TED.2011.2160065","article-title":"TCAD Assessment of Device Design Technologies for Enhanced Performance of Nanoscale DG MOSFET","volume":"58","author":"Sharma","year":"2011","journal-title":"IEEE Trans. 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