{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,24]],"date-time":"2026-02-24T06:28:49Z","timestamp":1771914529331,"version":"3.50.1"},"reference-count":50,"publisher":"MDPI AG","issue":"6","license":[{"start":{"date-parts":[[2023,3,14]],"date-time":"2023-03-14T00:00:00Z","timestamp":1678752000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"National Natural Science Foundation of China","award":["61474130"],"award-info":[{"award-number":["61474130"]}]},{"name":"National Natural Science Foundation of China","award":["62075230"],"award-info":[{"award-number":["62075230"]}]},{"name":"National Natural Science Foundation of China","award":["19ZR1465400"],"award-info":[{"award-number":["19ZR1465400"]}]},{"name":"National Natural Science Foundation of China","award":["21ZR1445700"],"award-info":[{"award-number":["21ZR1445700"]}]},{"name":"Natural Science Foundation of Shanghai","award":["61474130"],"award-info":[{"award-number":["61474130"]}]},{"name":"Natural Science Foundation of Shanghai","award":["62075230"],"award-info":[{"award-number":["62075230"]}]},{"name":"Natural Science Foundation of Shanghai","award":["19ZR1465400"],"award-info":[{"award-number":["19ZR1465400"]}]},{"name":"Natural Science Foundation of Shanghai","award":["21ZR1445700"],"award-info":[{"award-number":["21ZR1445700"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>A photodetector based on a hybrid dimensional heterostructure of laterally aligned multiwall carbon nanotubes (MWCNTs) and multilayered MoS2 was prepared using the micro-nano fixed-point transfer technique. Thanks to the high mobility of carbon nanotubes and the efficient interband absorption of MoS2, broadband detection from visible to near-infrared (520\u20131060 nm) was achieved. The test results demonstrate that the MWCNT-MoS2 heterostructure-based photodetector device exhibits an exceptional responsivity, detectivity, and external quantum efficiency. Specifically, the device demonstrated a responsivity of 3.67 \u00d7 103 A\/W (\u03bb = 520 nm, Vds = 1 V) and 718 A\/W (\u03bb = 1060 nm, Vds = 1 V). Moreover, the detectivity (D*) of the device was found to be 1.2 \u00d7 1010 Jones (\u03bb = 520 nm) and 1.5 \u00d7 109 Jones (\u03bb = 1060 nm), respectively. The device also demonstrated external quantum efficiency (EQE) values of approximately 8.77 \u00d7 105% (\u03bb = 520 nm) and 8.41 \u00d7 104% (\u03bb = 1060 nm). This work achieves visible and infrared detection based on mixed-dimensional heterostructures and provides a new option for optoelectronic devices based on low-dimensional materials.<\/jats:p>","DOI":"10.3390\/s23063104","type":"journal-article","created":{"date-parts":[[2023,3,14]],"date-time":"2023-03-14T06:14:58Z","timestamp":1678774498000},"page":"3104","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":7,"title":["High-Sensitivity 2D MoS2\/1D MWCNT Hybrid Dimensional Heterostructure Photodetector"],"prefix":"10.3390","volume":"23","author":[{"given":"Nanxin","family":"Fu","sequence":"first","affiliation":[{"name":"School of Materials and Chemistry, the University of Shanghai for Science and Technology, Shanghai 200093, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jiazhen","family":"Zhang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yuan","family":"He","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xuyang","family":"Lv","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shuguang","family":"Guo","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4833-4339","authenticated-orcid":false,"given":"Xingjun","family":"Wang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2966-0876","authenticated-orcid":false,"given":"Bin","family":"Zhao","sequence":"additional","affiliation":[{"name":"School of Materials and Chemistry, the University of Shanghai for Science and Technology, Shanghai 200093, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Gang","family":"Chen","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Lin","family":"Wang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2023,3,14]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"666","DOI":"10.1126\/science.1102896","article-title":"Electric Field Effect in Atomically Thin Carbon Films","volume":"306","author":"Novoselov","year":"2004","journal-title":"Science"},{"key":"ref_2","doi-asserted-by":"crossref","unstructured":"Abdolkader, T.M., Yousry, E.M., and Fikry, W. 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