{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,16]],"date-time":"2026-06-16T15:15:46Z","timestamp":1781622946755,"version":"3.54.5"},"reference-count":28,"publisher":"MDPI AG","issue":"7","license":[{"start":{"date-parts":[[2023,3,23]],"date-time":"2023-03-23T00:00:00Z","timestamp":1679529600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100002428","name":"the Austrian Science Fund (FWF)","doi-asserted-by":"publisher","award":["P34649-N"],"award-info":[{"award-number":["P34649-N"]}],"id":[{"id":"10.13039\/501100002428","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>This paper presents a CMOS-integrated dot avalanche photodiode (dot-APD) that features a small central n+\/p-well hemispherical cathode\/p-well structure circularly surrounded by an anode ring. The dot-APD enables wide hemispherical depletion, charge collection from a large volume, and a small multiplication region. These features result in a large light-sensitive area, high responsivity and bandwidth, and exceptionally low junction capacitance. The active area can be further expanded using a multi-dot structure, which is an array of several cathode\/p-well dots with a shared anode. Experimental results show that a 5 \u00d7 5 multi-dot APD with an active area of 70 \u03bcm \u00d7 70 \u03bcm achieves a bandwidth of 1.8 GHz, a responsivity of 9.7 A\/W, and a capacitance of 27 fF. The structure of the multi-dot APD allows for the design of APDs in various sizes that offer high bandwidth and responsivity as an optical detector for various applications while still maintaining a small capacitance.<\/jats:p>","DOI":"10.3390\/s23073403","type":"journal-article","created":{"date-parts":[[2023,3,24]],"date-time":"2023-03-24T03:16:46Z","timestamp":1679627806000},"page":"3403","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":12,"title":["Area and Bandwidth Enhancement of an n+\/p-Well Dot Avalanche Photodiode in 0.35 \u03bcm CMOS Technology"],"prefix":"10.3390","volume":"23","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-4658-2774","authenticated-orcid":false,"given":"Seyed Saman","family":"Kohneh Poushi","sequence":"first","affiliation":[{"name":"Institute of Electrodynamics, Microwave and Circuit Engineering, Vienna University of Technology, 1040 Vienna, Austria"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Bernhard","family":"Goll","sequence":"additional","affiliation":[{"name":"Institute of Electrodynamics, Microwave and Circuit Engineering, Vienna University of Technology, 1040 Vienna, Austria"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7669-2192","authenticated-orcid":false,"given":"Kerstin","family":"Schneider-Hornstein","sequence":"additional","affiliation":[{"name":"Institute of Electrodynamics, Microwave and Circuit Engineering, Vienna University of Technology, 1040 Vienna, Austria"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5239-6957","authenticated-orcid":false,"given":"Michael","family":"Hofbauer","sequence":"additional","affiliation":[{"name":"Institute of Electrodynamics, Microwave and Circuit Engineering, Vienna University of Technology, 1040 Vienna, Austria"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3221-0769","authenticated-orcid":false,"given":"Horst","family":"Zimmermann","sequence":"additional","affiliation":[{"name":"Institute of Electrodynamics, Microwave and Circuit Engineering, Vienna University of Technology, 1040 Vienna, Austria"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2023,3,23]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Joo, J.E., Lee, M.J., and Park, S.M. 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