{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,29]],"date-time":"2025-12-29T04:41:50Z","timestamp":1766983310262,"version":"build-2065373602"},"reference-count":27,"publisher":"MDPI AG","issue":"7","license":[{"start":{"date-parts":[[2023,4,6]],"date-time":"2023-04-06T00:00:00Z","timestamp":1680739200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"Junta de Andaluc\u00eda (Spain)","award":["PI-0505-2017 FEDER","B-TIC-468-UGR18","PID2019-104888 GB-I00","P18-RT-3237","857558"],"award-info":[{"award-number":["PI-0505-2017 FEDER","B-TIC-468-UGR18","PID2019-104888 GB-I00","P18-RT-3237","857558"]}]},{"name":"Junta de Andaluc\u00eda-Consejer\u00eda de Econom\u00eda y Conocimiento Project","award":["PI-0505-2017 FEDER","B-TIC-468-UGR18","PID2019-104888 GB-I00","P18-RT-3237","857558"],"award-info":[{"award-number":["PI-0505-2017 FEDER","B-TIC-468-UGR18","PID2019-104888 GB-I00","P18-RT-3237","857558"]}]},{"name":"Ministerio de Ciencia e Innovaci\u00f3n, Proyecto del Plan Nacional I + D","award":["PI-0505-2017 FEDER","B-TIC-468-UGR18","PID2019-104888 GB-I00","P18-RT-3237","857558"],"award-info":[{"award-number":["PI-0505-2017 FEDER","B-TIC-468-UGR18","PID2019-104888 GB-I00","P18-RT-3237","857558"]}]},{"name":"Proyectos I + D + i Junta de Andaluc\u00eda 2018","award":["PI-0505-2017 FEDER","B-TIC-468-UGR18","PID2019-104888 GB-I00","P18-RT-3237","857558"],"award-info":[{"award-number":["PI-0505-2017 FEDER","B-TIC-468-UGR18","PID2019-104888 GB-I00","P18-RT-3237","857558"]}]},{"name":"European Union H2020 ELICSIR project","award":["PI-0505-2017 FEDER","B-TIC-468-UGR18","PID2019-104888 GB-I00","P18-RT-3237","857558"],"award-info":[{"award-number":["PI-0505-2017 FEDER","B-TIC-468-UGR18","PID2019-104888 GB-I00","P18-RT-3237","857558"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>A commercial pMOS transistor (MOSFET), 3N163 from Vishay (USA), has been characterized as a low-energy proton beam dosimeter. The top of the samples\u2019 housing has been removed to guarantee that protons reached the sensitive area, that is, the silicon die. Irradiations took place at the National Accelerator Centre (Seville, Spain). During irradiations, the transistors were biased to improve the sensitivity, and the silicon temperature was monitored activating the parasitic diode of the MOSFET. Bias voltages of 0, 1, 5, and 10 V were applied to four sets of three transistors, obtaining an averaged sensitivity that was linearly dependent on this voltage. In addition, the short-fading effect was studied, and the uncertainty of this effect was obtained. The bias voltage that provided an acceptable sensitivity, (11.4 \u00b1 0.9) mV\/Gy, minimizing the uncertainty due to the fading effect (\u22120.09 \u00b1 0.11) Gy was 1 V for a total absorbed dose of 40 Gy. Therefore, this off-the-shelf electronic device presents promising characteristics as a dosimeter sensor for proton beams.<\/jats:p>","DOI":"10.3390\/s23073771","type":"journal-article","created":{"date-parts":[[2023,4,6]],"date-time":"2023-04-06T05:54:39Z","timestamp":1680760479000},"page":"3771","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["General Purpose Transistor Characterized as Dosimetry Sensor of Proton Beams"],"prefix":"10.3390","volume":"23","author":[{"given":"J. A.","family":"Moreno-P\u00e9rez","sequence":"first","affiliation":[{"name":"ECSens, Imuds, Department of Electronics and Computer Technology, ETSIIT, University of Granada, 18014 Granada, Spain"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2522-6108","authenticated-orcid":false,"given":"I.","family":"Ruiz-Garc\u00eda","sequence":"additional","affiliation":[{"name":"ECSens, Imuds, Department of Electronics and Computer Technology, ETSIIT, University of Granada, 18014 Granada, Spain"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3800-1757","authenticated-orcid":false,"given":"P.","family":"Mart\u00edn-Holgado","sequence":"additional","affiliation":[{"name":"National Accelerator Center (University of Sevilla, CSIC, JA), 41092 Sevilla, Spain"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2326-6173","authenticated-orcid":false,"given":"A.","family":"Romero-Maestre","sequence":"additional","affiliation":[{"name":"National Accelerator Center (University of Sevilla, CSIC, JA), 41092 Sevilla, Spain"}]},{"given":"M.","family":"Anguiano","sequence":"additional","affiliation":[{"name":"Department of Atomic, Molecular and Nuclear Physics, University of Granada, Institute for Biosanitary Research, Ibs. Granada, 18012 Granada, Spain"}]},{"given":"R.","family":"Vila","sequence":"additional","affiliation":[{"name":"National Fusion Laboratory, EURATOM-CIEMAT, 28040 Madrid, Spain"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0234-4758","authenticated-orcid":false,"given":"M. A.","family":"Carvajal","sequence":"additional","affiliation":[{"name":"ECSens, Imuds, Department of Electronics and Computer Technology, ETSIIT, University of Granada, 18014 Granada, Spain"}]}],"member":"1968","published-online":{"date-parts":[[2023,4,6]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"263","DOI":"10.1016\/j.radonc.2006.07.025","article-title":"Intensity modulated photon and proton therapy for the treatment of head and neck tumors","volume":"80","author":"Steneker","year":"2006","journal-title":"Radiother. 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