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The etched Ge-doped SMF was obtained by only using wet-etching, i.e., hydrofluoric acid solution. The distributed refractive index sensing is achieved by measuring the spectral shift of the local RBS spectra using OFDR. The sensing length of 10 cm and the spatial resolution of 5.25 mm are achieved in the experiment. The refractive index sensing range is as wide as 1.33\u20131.44 refractive index units (RIU), where the average sensitivity was about 757 GHz\/RIU. 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