{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,3]],"date-time":"2026-07-03T22:06:36Z","timestamp":1783116396705,"version":"3.54.6"},"reference-count":54,"publisher":"MDPI AG","issue":"9","license":[{"start":{"date-parts":[[2023,4,29]],"date-time":"2023-04-29T00:00:00Z","timestamp":1682726400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"the National Natural Science Foundation of China","award":["12104399"],"award-info":[{"award-number":["12104399"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>The increasing interest in two-dimensional materials with unique crystal structures and novel band characteristics has provided numerous new strategies and paradigms in the field of photodetection. However, as the demand for wide-spectrum detection increases, the size of integrated systems and the limitations of mission modules pose significant challenges to existing devices. In this paper, we present a van der Waals heterostructure photodetector based on Ta2NiSe5\/WSe2, leveraging the inherent characteristics of heterostructures. Our results demonstrate that this detector exhibits excellent broad-spectrum detection ability from the visible to the infrared bands at room temperature, achieving an extremely high on\/off ratio, without the need for an external bias voltage. Furthermore, compared to a pure material detector, it exhibits a fast response and low dark currents (~3.6 pA), with rise and fall times of 278 \u03bcs and 283 \u03bcs for the response rate, respectively. Our findings provide a promising method for wide-spectrum detection and enrich the diversity of room-temperature photoelectric detection.<\/jats:p>","DOI":"10.3390\/s23094385","type":"journal-article","created":{"date-parts":[[2023,5,1]],"date-time":"2023-05-01T12:12:11Z","timestamp":1682943131000},"page":"4385","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":18,"title":["Visible Near-Infrared Photodetection Based on Ta2NiSe5\/WSe2 van der Waals Heterostructures"],"prefix":"10.3390","volume":"23","author":[{"given":"Pan","family":"Xiao","sequence":"first","affiliation":[{"name":"College of Science, Zhejiang University of Technology, 288 Liu-He Road, Hangzhou 310023, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shi","family":"Zhang","sequence":"additional","affiliation":[{"name":"College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou 310024, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Libo","family":"Zhang","sequence":"additional","affiliation":[{"name":"College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou 310024, China"},{"name":"State Key Laboratory for Infrared, Physics Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jialiang","family":"Yang","sequence":"additional","affiliation":[{"name":"College of Science, Zhejiang University of Technology, 288 Liu-He Road, Hangzhou 310023, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chaofan","family":"Shi","sequence":"additional","affiliation":[{"name":"College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou 310024, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Li","family":"Han","sequence":"additional","affiliation":[{"name":"College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou 310024, China"},{"name":"State Key Laboratory for Infrared, Physics Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Weiwei","family":"Tang","sequence":"additional","affiliation":[{"name":"College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou 310024, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Bairen","family":"Zhu","sequence":"additional","affiliation":[{"name":"College of Science, Zhejiang University of Technology, 288 Liu-He Road, Hangzhou 310023, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2023,4,29]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"5204","DOI":"10.1039\/C6CS00896H","article-title":"Perovskite-based photodetectors: Materials and devices","volume":"46","author":"Wang","year":"2017","journal-title":"Chem. Soc. Rev."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"3691","DOI":"10.1039\/C5CS00106D","article-title":"Photocurrent generation with two-dimensional van der Waals semiconductors","volume":"44","author":"Buscema","year":"2015","journal-title":"Chem. Soc. Rev."},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"2100051","DOI":"10.1002\/smsc.202100051","article-title":"2D Material-Based Photodetectors for Infrared Imaging","volume":"2","author":"Cheng","year":"2021","journal-title":"Small Sci."},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"115","DOI":"10.1016\/j.apmt.2018.12.010","article-title":"Broadband photodetectors based on 2D group IVA metal chalcogenides semiconductors","volume":"15","author":"Wang","year":"2019","journal-title":"Appl. Mater. Today"},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1016\/j.matdes.2018.05.017","article-title":"Large-area flexible photodetector based on atomically thin MoS2\/graphene film","volume":"154","author":"Sun","year":"2018","journal-title":"Mater. Des."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"220501","DOI":"10.1063\/5.0050117","article-title":"Perspective on the future of silicon photonics and electronics","volume":"118","author":"Margalit","year":"2021","journal-title":"Appl. Phys. Lett."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"227","DOI":"10.1002\/adma.200800529","article-title":"GaN Nanofibers based on Electrospinning: Facile Synthesis, Controlled Assembly, Precise Doping, and Application as High Performance UV Photodetector","volume":"21","author":"Wu","year":"2009","journal-title":"Adv. Mater."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"845","DOI":"10.1002\/adma.201102585","article-title":"Realization of a high-performance GaN UV detector by nanoplasmonic enhancement","volume":"24","author":"Li","year":"2012","journal-title":"Adv. Mater."},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"R33","DOI":"10.1088\/0268-1242\/18\/4\/201","article-title":"Wide-bandgap semiconductor ultraviolet photodetectors","volume":"18","author":"Monroy","year":"2003","journal-title":"Semicond. Sci. Technol."},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"1803807","DOI":"10.1002\/adfm.201803807","article-title":"Progress, Challenges, and Opportunities for 2D Material Based Photodetectors","volume":"29","author":"Long","year":"2018","journal-title":"Adv. Funct. Mater."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"149","DOI":"10.1016\/j.infrared.2017.11.009","article-title":"Two dimensional materials based photodetectors","volume":"88","author":"Wang","year":"2018","journal-title":"Infrared Phys. Technol."},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"291","DOI":"10.1002\/inf2.12067","article-title":"Recent advances in low-dimensional semiconductor nanomaterials and their applications in high-performance photodetectors","volume":"2","author":"Fang","year":"2019","journal-title":"InfoMat"},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1038\/s41566-018-0288-z","article-title":"Accurate characterization of next-generation thin-film photodetectors","volume":"13","author":"Fang","year":"2018","journal-title":"Nat. Photonics"},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"3311","DOI":"10.1038\/s41467-018-05874-2","article-title":"Ultrafast and highly sensitive infrared photodetectors based on two-dimensional oxyselenide crystals","volume":"9","author":"Yin","year":"2018","journal-title":"Nat. Commun."},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"33","DOI":"10.1002\/inf2.12004","article-title":"Design strategies for two-dimensional material photodetectors to enhance device performance","volume":"1","author":"Wang","year":"2019","journal-title":"InfoMat"},{"key":"ref_16","doi-asserted-by":"crossref","unstructured":"Abderrahmane, A., Woo, C., and Ko, P.-J. (2022). Low Power Consumption Gate-Tunable WSe2\/SnSe2 van der Waals Tunnel Field-Effect Transistor. Electronics, 11.","DOI":"10.3390\/electronics11050833"},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"100473","DOI":"10.1016\/j.jphotochemrev.2021.100473","article-title":"Two-dimensional materials toward Terahertz optoelectronic device applications","volume":"51","author":"Shi","year":"2022","journal-title":"J. Photochem. Photobiol. C Photochem. Rev."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"3766","DOI":"10.1021\/cr300263a","article-title":"Graphene-like two-dimensional materials","volume":"113","author":"Xu","year":"2013","journal-title":"Chem. Rev."},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"74","DOI":"10.1021\/nn2024557","article-title":"Single-Layer MoS2 Phototransistors","volume":"6","author":"Yin","year":"2012","journal-title":"ACS Nano"},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"1388","DOI":"10.1021\/acsphotonics.0c00361","article-title":"Highly Responsive Flexible Photodetectors Based on MOVPE Grown Uniform Few-Layer MoS2","volume":"7","author":"Schneider","year":"2020","journal-title":"ACS Photonics"},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"5832","DOI":"10.1002\/adma.201201909","article-title":"High-detectivity multilayer MoS(2) phototransistors with spectral response from ultraviolet to infrared","volume":"24","author":"Choi","year":"2012","journal-title":"Adv. Mater."},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"497","DOI":"10.1038\/nnano.2013.100","article-title":"Ultrasensitive photodetectors based on monolayer MoS2","volume":"8","author":"Lembke","year":"2013","journal-title":"Nat. Nanotechnol."},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"5733","DOI":"10.1021\/nl5025535","article-title":"Tunable transport gap in phosphorene","volume":"14","author":"Das","year":"2014","journal-title":"Nano Lett."},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"888","DOI":"10.1038\/nphys4141","article-title":"Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes","volume":"13","author":"Avsar","year":"2017","journal-title":"Nat. Phys."},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"7315","DOI":"10.1038\/ncomms8315","article-title":"High-quality sandwiched black phosphorus heterostructure and its quantum oscillations","volume":"6","author":"Chen","year":"2015","journal-title":"Nat. Commun."},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"1330","DOI":"10.1038\/s41467-020-14902-z","article-title":"Epitaxial nucleation and lateral growth of high-crystalline black phosphorus films on silicon","volume":"11","author":"Xu","year":"2020","journal-title":"Nat. Commun."},{"key":"ref_27","doi-asserted-by":"crossref","first-page":"111799","DOI":"10.1016\/j.matdes.2023.111799","article-title":"Two-dimensional (2D) \u03b1-In2Se3\/Ta2NiSe5 heterojunction photodetector with high sensitivity and fast response in a wide spectral range","volume":"227","author":"Li","year":"2023","journal-title":"Mater. Des."},{"key":"ref_28","doi-asserted-by":"crossref","first-page":"025004","DOI":"10.1088\/2053-1583\/acb1c3","article-title":"High-performance flexible broadband photodetectors enabled by 2D Ta2NiSe5 nanosheets","volume":"10","author":"Guo","year":"2023","journal-title":"2D Mater."},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"026402","DOI":"10.1103\/PhysRevLett.103.026402","article-title":"Excitonic insulator state in Ta2NiSe5 probed by photoemission spectroscopy","volume":"103","author":"Wakisaka","year":"2009","journal-title":"Phys. Rev. Lett."},{"key":"ref_30","doi-asserted-by":"crossref","first-page":"14408","DOI":"10.1038\/ncomms14408","article-title":"Zero-gap semiconductor to excitonic insulator transition in Ta2NiSe5","volume":"8","author":"Lu","year":"2017","journal-title":"Nat. Commun."},{"key":"ref_31","doi-asserted-by":"crossref","first-page":"8281","DOI":"10.1002\/adfm.201603804","article-title":"Ternary Ta2NiSe5 Flakes for a High-Performance Infrared Photodetector","volume":"26","author":"Li","year":"2016","journal-title":"Adv. Funct. Mater."},{"key":"ref_32","doi-asserted-by":"crossref","first-page":"109894","DOI":"10.1016\/j.matdes.2021.109894","article-title":"Ultra-broadband photodetection based on two-dimensional layered Ta2NiSe5 with strong anisotropy and high responsivity","volume":"208","author":"Zhang","year":"2021","journal-title":"Mater. Des."},{"key":"ref_33","doi-asserted-by":"crossref","first-page":"17948","DOI":"10.1021\/acsami.1c00268","article-title":"Highly In-Plane Anisotropic Two-Dimensional Ternary Ta2NiSe5 for Polarization-Sensitive Photodetectors","volume":"13","author":"Qiao","year":"2021","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_34","doi-asserted-by":"crossref","first-page":"3820","DOI":"10.1021\/acsphotonics.8b00853","article-title":"Design of 2D Layered PtSe2 Heterojunction for the High-Performance, Room-Temperature, Broadband, Infrared Photodetector","volume":"5","author":"Wu","year":"2018","journal-title":"ACS Photonics"},{"key":"ref_35","doi-asserted-by":"crossref","first-page":"565","DOI":"10.1021\/acsphotonics.8b01675","article-title":"In Situ Fabrication of 2D WS2\/Si Type-II Heterojunction for Self-Powered Broadband Photodetector with Response up to Mid-Infrared","volume":"6","author":"Wu","year":"2019","journal-title":"ACS Photonics"},{"key":"ref_36","doi-asserted-by":"crossref","first-page":"1800957","DOI":"10.1002\/aelm.201800957","article-title":"High-Responsivity Near-Infrared Photodetector Using Gate-Modulated Graphene\/Germanium Schottky Junction","volume":"5","author":"Chang","year":"2019","journal-title":"Adv. Electron. Mater."},{"key":"ref_37","doi-asserted-by":"crossref","first-page":"9036","DOI":"10.1021\/acs.inorgchem.9b00432","article-title":"Strong Electron-Phonon Coupling in the Excitonic Insulator Ta2NiSe5","volume":"58","author":"Yan","year":"2019","journal-title":"Inorg. Chem."},{"key":"ref_38","doi-asserted-by":"crossref","first-page":"1067","DOI":"10.1021\/ar4002312","article-title":"Preparation and Applications of Mechanically Exfoliated Single-Layer and Multi layer MoS2 and WSe2 Nanosheets","volume":"47","author":"Li","year":"2014","journal-title":"Acc. Chem. Res."},{"key":"ref_39","doi-asserted-by":"crossref","first-page":"5","DOI":"10.1063\/1.4986851","article-title":"Pulsed laser deposition for the synthesis of monolayer WSe2","volume":"111","author":"Mohammed","year":"2017","journal-title":"Appl. Phys. Lett."},{"key":"ref_40","doi-asserted-by":"crossref","first-page":"041407","DOI":"10.1063\/1.5124672","article-title":"Phase-transition modulated, high-performance dual-mode photodetectors based on WSe2\/VO2 heterojunctions","volume":"6","author":"Luo","year":"2019","journal-title":"Appl. Phys. Rev."},{"key":"ref_41","doi-asserted-by":"crossref","first-page":"012111","DOI":"10.1063\/1.4774090","article-title":"Band offsets and heterostructures of two-dimensional semiconductors","volume":"102","author":"Kang","year":"2013","journal-title":"Appl. Phys. Lett."},{"key":"ref_42","doi-asserted-by":"crossref","first-page":"225501","DOI":"10.1088\/0957-4484\/27\/22\/225501","article-title":"Flexible, transparent and ultra-broadband photodetector based on large-area WSe2 film for wearable devices","volume":"27","author":"Zheng","year":"2016","journal-title":"Nanotechnology"},{"key":"ref_43","doi-asserted-by":"crossref","first-page":"11945","DOI":"10.1002\/anie.201603557","article-title":"Hybrid Bilayer WSe2 -CH3 NH3 PbI3 Organolead Halide Perovskite as a High-Performance Photodetector","volume":"55","author":"Lu","year":"2016","journal-title":"Angew. Chem. Int. Ed. Engl."},{"key":"ref_44","doi-asserted-by":"crossref","first-page":"2110706","DOI":"10.1002\/adfm.202110706","article-title":"Perovskite Quantum Dot-Ta2NiSe5 Mixed-Dimensional Van Der Waals Heterostructures for High-Performance Near-Infrared Photodetection","volume":"32","author":"Qiao","year":"2021","journal-title":"Adv. Funct. Mater."},{"key":"ref_45","doi-asserted-by":"crossref","first-page":"2732","DOI":"10.1063\/1.369590","article-title":"Band lineup of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Charge transfer correction term for the electron affinity rule","volume":"85","author":"Schlaf","year":"1999","journal-title":"J. Appl. Phys."},{"key":"ref_46","doi-asserted-by":"crossref","first-page":"100092","DOI":"10.1016\/j.mtnano.2020.100092","article-title":"Hybrid heterostructures and devices based on two-dimensional layers and wide bandgap materials","volume":"12","author":"Wu","year":"2020","journal-title":"Mater. Today Nano"},{"key":"ref_47","doi-asserted-by":"crossref","first-page":"e1802598","DOI":"10.1002\/smll.201802598","article-title":"Ultra-Broadband Flexible Photodetector Based on Topological Crystalline Insulator SnTe with High Responsivity","volume":"14","author":"Yang","year":"2018","journal-title":"Small"},{"key":"ref_48","doi-asserted-by":"crossref","first-page":"4977","DOI":"10.1364\/OL.472016","article-title":"Ultrafast visible-infrared photodetector based on the SnSe2\/Bi2Se3 heterostructure","volume":"47","author":"Guo","year":"2022","journal-title":"Opt. Lett."},{"key":"ref_49","doi-asserted-by":"crossref","first-page":"26","DOI":"10.1002\/adma.201902044","article-title":"Progress of Photodetectors Based on the Photothermoelectric Effect","volume":"31","author":"Lu","year":"2019","journal-title":"Adv. Mater."},{"key":"ref_50","doi-asserted-by":"crossref","first-page":"261101","DOI":"10.1063\/5.0093745","article-title":"Two-dimensional Ta2NiSe5\/GaSe van der Waals heterojunction for ultrasensitive visible and near-infrared dual-band photodetector","volume":"120","author":"Zhang","year":"2022","journal-title":"Appl. Phys. Lett."},{"key":"ref_51","doi-asserted-by":"crossref","first-page":"56384","DOI":"10.1021\/acsami.2c17495","article-title":"High-Gain MoS2\/Ta2NiSe5 Heterojunction Photodetectors with Charge Transfer and Suppressing Dark Current","volume":"14","author":"Guo","year":"2022","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_52","doi-asserted-by":"crossref","first-page":"112537","DOI":"10.1016\/j.optmat.2022.112537","article-title":"Atomically thin WSe2 nanosheets for fabrication of high-performance p-Si\/WSe2 heterostructure","volume":"129","author":"Kapatel","year":"2022","journal-title":"Opt. Mater."},{"key":"ref_53","doi-asserted-by":"crossref","first-page":"19277","DOI":"10.1021\/acsami.9b03709","article-title":"Unique and Tunable Photodetecting Performance for Two-Dimensional Layered MoSe2\/WSe2 p\u2013n Junction on the 4H-SiC Substrate","volume":"11","author":"Gao","year":"2019","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_54","doi-asserted-by":"crossref","first-page":"2001991","DOI":"10.1002\/adom.202001991","article-title":"Van der Waals PdSe2\/WS2 Heterostructures for Robust High-Performance Broadband Photodetection from Visible to Infrared Optical Communication Band","volume":"9","author":"Kang","year":"2021","journal-title":"Adv. Opt. Mater."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/23\/9\/4385\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,10]],"date-time":"2025-10-10T19:26:21Z","timestamp":1760124381000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/23\/9\/4385"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,4,29]]},"references-count":54,"journal-issue":{"issue":"9","published-online":{"date-parts":[[2023,5]]}},"alternative-id":["s23094385"],"URL":"https:\/\/doi.org\/10.3390\/s23094385","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2023,4,29]]}}}