{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,12]],"date-time":"2026-05-12T17:23:40Z","timestamp":1778606620910,"version":"3.51.4"},"reference-count":191,"publisher":"MDPI AG","issue":"9","license":[{"start":{"date-parts":[[2023,5,2]],"date-time":"2023-05-02T00:00:00Z","timestamp":1682985600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"The Polish National Science Centre","award":["UMO-2021\/41\/B\/ST7\/01532"],"award-info":[{"award-number":["UMO-2021\/41\/B\/ST7\/01532"]}]},{"name":"The Polish National Science Centre","award":["B.PRJ.RT.858"],"award-info":[{"award-number":["B.PRJ.RT.858"]}]},{"name":"EDA","award":["UMO-2021\/41\/B\/ST7\/01532"],"award-info":[{"award-number":["UMO-2021\/41\/B\/ST7\/01532"]}]},{"name":"EDA","award":["B.PRJ.RT.858"],"award-info":[{"award-number":["B.PRJ.RT.858"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>The paper presents the long-term evolution and recent development of ultraviolet photodetectors. First, the general theory of ultraviolet (UV) photodetectors is briefly described. Then the different types of detectors are presented, starting with the older photoemission detectors through photomultipliers and image intensifiers. More attention is paid to silicon and different types of wide band gap semiconductor photodetectors such as AlGaN, SiC-based, and diamond detectors. Additionally, Ga2O3 is considered a promising material for solar-blind photodetectors due to its excellent electrical properties and a large bandgap energy. The last part of the paper deals with new UV photodetector concepts inspired by new device architectures based on low-dimensional solid materials. It is shown that the evolution of the architecture has shifted device performance toward higher sensitivity, higher frequency response, lower noise, and higher gain-bandwidth products.<\/jats:p>","DOI":"10.3390\/s23094452","type":"journal-article","created":{"date-parts":[[2023,5,3]],"date-time":"2023-05-03T01:36:38Z","timestamp":1683077798000},"page":"4452","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":79,"title":["Ultraviolet Photodetectors: From Photocathodes to Low-Dimensional Solids"],"prefix":"10.3390","volume":"23","author":[{"given":"Antoni","family":"Rogalski","sequence":"first","affiliation":[{"name":"Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zbigniew","family":"Bielecki","sequence":"additional","affiliation":[{"name":"Institute of Optoelectronics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7091-3521","authenticated-orcid":false,"given":"Janusz","family":"Miko\u0142ajczyk","sequence":"additional","affiliation":[{"name":"Institute of Optoelectronics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4350-0729","authenticated-orcid":false,"given":"Jacek","family":"Wojtas","sequence":"additional","affiliation":[{"name":"Institute of Optoelectronics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2023,5,2]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"143","DOI":"10.1016\/0038-092X(78)90187-1","article-title":"The spectral distribution of solar radiation at the earth\u2019s surface\u2014Elements of a model","volume":"20","author":"Leckner","year":"1978","journal-title":"Sol. Energy"},{"key":"ref_2","doi-asserted-by":"crossref","unstructured":"International Commission on Non-Ionizing Radiation Protection (2004). Guidelines on limits of exposure to ultraviolet radiation of wavelengths between 180 nm and 400 nm (incoherent optical radiation). Health Phys., 87, 171\u2013186.","DOI":"10.1097\/00004032-200408000-00006"},{"key":"ref_3","unstructured":"Commission Internationale de L\u2019Eclairage (2023, April 29). Technical Report. Rationalizing Nomenclature for UV Doses and Effects on Humans. CIE 209:2014. WMO\/GAW, Raport No. 21, 1-14. Available online: http:\/\/files.cie.co.at\/724_cie209_2014.pdf."},{"key":"ref_4","unstructured":"(2022, December 22). The Ozone Hole. Available online: https:\/\/www.theozonehole.org\/images\/uvrayjp.gif."},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"3693","DOI":"10.1364\/AO.20.003693","article-title":"Imaging detectors for the ultraviolet","volume":"20","author":"Coleman","year":"1981","journal-title":"Appl. Opt."},{"key":"ref_6","doi-asserted-by":"crossref","unstructured":"Rogalski, A. (2019). Infrared and Terahertz Detectors, CRC Press. [3rd ed.].","DOI":"10.1201\/b21951"},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"95","DOI":"10.1016\/S0065-2539(08)60049-9","article-title":"Photodetectors for the 0.1 to 1.0 \u03bcm Spectral Region","volume":"34","author":"Seib","year":"1973","journal-title":"Adv. Electron. Electron Phys."},{"key":"ref_8","unstructured":"Dereniak, E.L., and Boreman, G.D. (1996). Infrared Detectors and Systems, Wiley."},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"7433","DOI":"10.1063\/1.362677","article-title":"Semiconductor ultraviolet detectors","volume":"79","author":"Razeghi","year":"1996","journal-title":"J. Appl. Phys."},{"key":"ref_10","unstructured":"Kruse, P.W. (1977). Optical and Infrared Detectors, Springer."},{"key":"ref_11","unstructured":"Boyd, R.W. (1983). Radiometry and the Detection of Optical Radiation, Wiley."},{"key":"ref_12","unstructured":"Kingston, R.H. (2013). Detection of Optical and Infrared Radiation, Springer."},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"171110","DOI":"10.1063\/1.4826458","article-title":"Background limited ultraviolet photodetectors of solar-blind ultraviolet detection","volume":"103","author":"Li","year":"2013","journal-title":"Appl. Phys. Lett."},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"1639","DOI":"10.1103\/PhysRev.36.1639","article-title":"Photoelectric Emission from Thin Films of Caesium","volume":"36","author":"Koller","year":"1930","journal-title":"Phys. Rev."},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"173","DOI":"10.1080\/14786443109461791","article-title":"The photoelectric emission of thin films","volume":"12","author":"Campbell","year":"1931","journal-title":"Lond. Edinb. Dublin Philos. Mag. J. Sci."},{"key":"ref_16","unstructured":"Bass, M., Van Stryland, E.W., Williams, D.R., and Wolfw, W.L. (1995). Handbook of Optics, McGraw-Hill."},{"key":"ref_17","unstructured":"Sembach, K., Beasley, M., Blouke, M., Ebbets, D., Green, J., Greer, F., Jenkins, E., Joseph, C., Kimball, R., and MacKenty, J. (2023, April 29). Technology Investments to Meet the Needs of Astronomy at Ultraviolet Wavelengths in the 21st Century. Available online: https:\/\/www.astro.princeton.edu\/~dns\/Theia\/Sembach_UVtechnology_EOS.pdf."},{"key":"ref_18","unstructured":"Hamamatsu Photonics, K.K. (2023, April 29). Available online: https:\/\/www.hamamatsu.com\/content\/dam\/hamamatsu-photonics\/sites\/documents\/99_SALES_LIBRARY\/etd\/PMT_handbook_v4E.pdf."},{"key":"ref_19","first-page":"23","article-title":"Photomultiplier tubes do what other photon counters can\u2019t","volume":"56","author":"Wallace","year":"2020","journal-title":"Laser Focus World"},{"key":"ref_20","unstructured":"Bronner, C. (2023, April 24). PMT Development for Hyper-Kamiokande, The 22nd International Workshop on Neutrinos from Accelerators, 2021. Available online: https:\/\/indico.cern.ch\/event\/855372\/contributions\/4366117\/attachments\/2303388\/3918395\/HKPMT_NuFACT.pdf."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"247","DOI":"10.1007\/s10509-008-9814-7","article-title":"The current and future capabilities of MCP based UV detectors","volume":"320","author":"Vallerga","year":"2009","journal-title":"Astrophys. Space Sci."},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"63","DOI":"10.1007\/s10509-018-3283-4","article-title":"MCP detector development for UV space missions","volume":"363","author":"Conti","year":"2018","journal-title":"Astrophys. Space Sci."},{"key":"ref_23","doi-asserted-by":"crossref","unstructured":"Shi, L., Nihtianov, S., Scholze, F., Gottwald, A., and Nanver, L.K. (2011, January 13). High-Sensitivity High-Stability Silicon Photodiodes for DUV, VUV and EUV Spectral Ranges. Proceedings of the SPIE Optical Engineering + Applications, San Diego, CA, USA.","DOI":"10.1117\/12.891865"},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"2453","DOI":"10.1109\/JSEN.2012.2192103","article-title":"Comparative Study of Silicon-Based Ultraviolet Photodetectors","volume":"12","author":"Shi","year":"2012","journal-title":"IEEE Sens. J."},{"key":"ref_25","unstructured":"Widenhorn, R., Nguyen, V., and Dupret, A. (2023, March 26). Available online: https:\/\/spie.org\/Publications\/Proceedings\/Paper\/10.1117\/12.907727?SSO=1."},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"123","DOI":"10.3169\/mta.2.123","article-title":"[Paper] A Highly Ultraviolet Light Sensitive and Highly Robust Image Sensor Technology Based on Flattened Si Surface","volume":"2","author":"Kuroda","year":"2014","journal-title":"ITE Trans. Media Technol. Appl."},{"key":"ref_27","doi-asserted-by":"crossref","first-page":"081109","DOI":"10.1063\/1.4985591","article-title":"High-sensitivity silicon ultraviolet p+-i-n avalanche photodiode using ultra-shallow boron gradient doping","volume":"111","author":"Xia","year":"2017","journal-title":"Appl. Phys. Lett."},{"key":"ref_28","unstructured":"Itzler, M.A., and Campbell, J.C. (2023, March 26). Available online: https:\/\/spie.org\/Publications\/Proceedings\/Paper\/10.1117\/12.820825."},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"2922","DOI":"10.1063\/1.1145578","article-title":"Ultrahigh sensitivity single-photon detector using a Si avalanche photodiode for the measurement of ultraweak biochemiluminescence","volume":"66","author":"Isoshima","year":"1995","journal-title":"Rev. Sci. Instrum."},{"key":"ref_30","unstructured":"(2022, December 22). Si APD, MPPC. Chapter 03. Available online: https:\/\/fdocuments.in\/document\/si-apd-mppc-chapter-03-1-si-apd-home-si-apd-mppc-chapter-03-2-1-operating.html."},{"key":"ref_31","doi-asserted-by":"crossref","first-page":"607","DOI":"10.1063\/1.360322","article-title":"Resonant cavity enhanced photonic devices","volume":"78","author":"Strite","year":"1995","journal-title":"J. Appl. Phys."},{"key":"ref_32","unstructured":"El-Batawy, Y., Mohammedy, F.M., and Deen, M.J. (2016). Photodetectors, Elsevier."},{"key":"ref_33","doi-asserted-by":"crossref","unstructured":"Sipauba Carvalho da Silva, Y.R., Koda, Y., Nasuno, S., Kuroda, R., and Sugawa, S. (2015, January 1\u20134). An ultraviolet radiation sensor using differential spectral response of silicon photodiodes. Proceedings of the 2015 IEEE SENSORS, Busan, South Korea.","DOI":"10.1109\/ICSENS.2015.7370656"},{"key":"ref_34","doi-asserted-by":"crossref","unstructured":"Sipauba Carvalho da Silva, Y.R., Kuroda, R., and Sugawa, S. (2019). A Highly Robust Silicon Ultraviolet Selective Radiation Sensor Using Differential Spectral Response Method. Sensors, 19.","DOI":"10.3390\/s19122755"},{"key":"ref_35","unstructured":"(2022, December 22). About WFC3. Available online: https:\/\/www.stsci.edu\/hst\/instrumentation\/wfc3."},{"key":"ref_36","doi-asserted-by":"crossref","first-page":"035026","DOI":"10.1088\/0268-1242\/23\/3\/035026","article-title":"New developments on diamond photodetector for VUV solar observations","volume":"23","author":"BenMoussa","year":"2008","journal-title":"Semicond. Sci. Technol."},{"key":"ref_37","doi-asserted-by":"crossref","first-page":"2203","DOI":"10.1063\/1.123801","article-title":"Photoconductive detectors based on partially ordered AlxGa1\u2212xN alloys grown by molecular beam epitaxy","volume":"74","author":"Misra","year":"1999","journal-title":"Appl. Phys. Lett."},{"key":"ref_38","doi-asserted-by":"crossref","first-page":"6148","DOI":"10.1063\/1.367484","article-title":"Comprehensive characterization of metal\u2013semiconductor\u2013metal ultraviolet photodetectors fabricated on single-crystal GaN","volume":"83","author":"Carrano","year":"1998","journal-title":"J. Appl. Phys."},{"key":"ref_39","doi-asserted-by":"crossref","first-page":"2100","DOI":"10.1063\/1.115597","article-title":"AlGaN ultraviolet photoconductors grown on sapphire","volume":"68","author":"Walker","year":"1996","journal-title":"Appl. Phys. Lett."},{"key":"ref_40","unstructured":"Goldenberg, B., Zook, J.D., and Ulmer, R.J. (1995, January 21\u201323). Fabrication and performance of GaN detectors. Proceedings of the Topical Workshop on IIIV Nitrides Proc., Nagoya, Japan."},{"key":"ref_41","doi-asserted-by":"crossref","first-page":"3792","DOI":"10.1063\/1.115385","article-title":"Kinetics of photoconductivity in n -type GaN photodetector","volume":"67","author":"Kung","year":"1995","journal-title":"Appl. Phys. Lett."},{"key":"ref_42","doi-asserted-by":"crossref","first-page":"240","DOI":"10.1007\/s11664-999-0021-2","article-title":"Visible-blindness in photoconductive and photovoltaic AlGaN ultraviolet detectors","volume":"28","author":"Monroy","year":"1999","journal-title":"J. Electron. Mater."},{"key":"ref_43","doi-asserted-by":"crossref","first-page":"B48","DOI":"10.1364\/PRJ.7.000B48","article-title":"Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection","volume":"7","author":"Xu","year":"2019","journal-title":"Photon. Res."},{"key":"ref_44","first-page":"1","article-title":"Enhanced Responsivity of GaN Metal\u2013Semiconductor\u2013Metal (MSM) Photodetectors on GaN Substrate","volume":"9","author":"Chang","year":"2017","journal-title":"IEEE Photon. J."},{"key":"ref_45","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1109\/JQE.2020.3013955","article-title":"Ultrafast UV AlGaN Metal\u2013Semiconductor\u2013Metal Photodetector with a Response Time Below 25 ps","volume":"56","author":"Zhao","year":"2020","journal-title":"IEEE J. Quantum Electron."},{"key":"ref_46","doi-asserted-by":"crossref","first-page":"071101","DOI":"10.1063\/5.0011685","article-title":"High gain and high ultraviolet\/visible rejection ratio photodetectors using p-GaN\/AlGaN\/GaN heterostructures grown on Si","volume":"117","author":"Lyu","year":"2020","journal-title":"Appl. Phys. Lett."},{"key":"ref_47","doi-asserted-by":"crossref","first-page":"221109","DOI":"10.1063\/1.3148812","article-title":"Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates","volume":"94","author":"Zhang","year":"2009","journal-title":"Appl. Phys. Lett."},{"key":"ref_48","doi-asserted-by":"crossref","first-page":"211114","DOI":"10.1063\/1.3595303","article-title":"High gain ultraviolet photodetectors based on AlGaN\/GaN heterostructures for optical switching","volume":"98","author":"Martens","year":"2011","journal-title":"Appl. Phys. Lett."},{"key":"ref_49","doi-asserted-by":"crossref","first-page":"996","DOI":"10.1016\/j.physb.2009.10.040","article-title":"High performance Schottky UV photodetectors based on epitaxial AlGaN thin film","volume":"405","author":"Li","year":"2010","journal-title":"Phys. B Condens. Matter"},{"key":"ref_50","doi-asserted-by":"crossref","first-page":"2859","DOI":"10.1002\/pssb.200675618","article-title":"(Al,In,Ga)N-based photodetectors. Some materials issues","volume":"244","year":"2007","journal-title":"Phys. Status Solidi"},{"key":"ref_51","doi-asserted-by":"crossref","first-page":"2277","DOI":"10.1063\/1.118837","article-title":"Schottky barrier detectors on GaN for visible\u2013blind ultraviolet detection","volume":"70","author":"Chen","year":"1997","journal-title":"Appl. Phys. Lett."},{"key":"ref_52","doi-asserted-by":"crossref","first-page":"611","DOI":"10.1038\/nphoton.2010.186","article-title":"Graphene photonics and optoelectronics","volume":"4","author":"Bonaccorso","year":"2010","journal-title":"Nat. Photon."},{"key":"ref_53","doi-asserted-by":"crossref","first-page":"1354","DOI":"10.1088\/0268-1242\/19\/12\/004","article-title":"AlGaN\/GaN MSM photodetectors with photo-CVD annealed Ni\/Au semi-transparent contacts","volume":"19","author":"Chang","year":"2004","journal-title":"Semicond. Sci. Technol."},{"key":"ref_54","doi-asserted-by":"crossref","first-page":"1598","DOI":"10.1049\/el.2015.2364","article-title":"Solar-blind AlGaN MSM photodetectors with 24% external quantum efficiency at 0 V","volume":"51","author":"Brendel","year":"2015","journal-title":"Electron. Lett."},{"key":"ref_55","doi-asserted-by":"crossref","first-page":"16","DOI":"10.1016\/j.mssp.2014.02.054","article-title":"Recent advances in ultraviolet photodetectors","volume":"29","author":"Alaie","year":"2015","journal-title":"Mater. Sci. Semicond. Process."},{"key":"ref_56","doi-asserted-by":"crossref","unstructured":"Pandit, B., and Cho, J. (2018). AlGaN Ultraviolet Metal\u2013Semiconductor\u2013Metal Photodetectors with Reduced Graphene Oxide Contacts. Appl. Sci., 8.","DOI":"10.3390\/app8112098"},{"key":"ref_57","doi-asserted-by":"crossref","first-page":"321","DOI":"10.1002\/1521-396X(200111)188:1<321::AID-PSSA321>3.0.CO;2-8","article-title":"Resonant-Cavity-Enhanced UV Metal-Semiconductor-Metal (MSM) Photodetectors Based on AlGaN System","volume":"188","author":"Kishino","year":"2001","journal-title":"Phys. Status Solidi"},{"key":"ref_58","doi-asserted-by":"crossref","first-page":"845","DOI":"10.1002\/adma.201102585","article-title":"Realization of a High-Performance GaN UV Detector by Nanoplasmonic Enhancement","volume":"24","author":"Li","year":"2012","journal-title":"Adv. Mater."},{"key":"ref_59","doi-asserted-by":"crossref","first-page":"121117","DOI":"10.1063\/1.3567943","article-title":"Improved performance of GaN metal-semiconductor-metal ultraviolet detectors by depositing SiO2 nanoparticles on a GaN surface","volume":"98","author":"Sun","year":"2011","journal-title":"Appl. Phys. Lett."},{"key":"ref_60","first-page":"117","article-title":"Wide-bandgap III-nitride semiconductors: Opportunities for future optoelectronics","volume":"9","author":"Park","year":"2001","journal-title":"Opto-Electron. Rev."},{"key":"ref_61","doi-asserted-by":"crossref","first-page":"141112","DOI":"10.1063\/1.2720712","article-title":"Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes","volume":"90","author":"McClintock","year":"2007","journal-title":"Appl. Phys. Lett."},{"key":"ref_62","doi-asserted-by":"crossref","first-page":"114","DOI":"10.3389\/fmats.2022.846418","article-title":"On the Scope of GaN-Based Avalanche Photodiodes for Various Ultraviolet-Based Applications","volume":"9","author":"Ji","year":"2022","journal-title":"Front. Mater."},{"key":"ref_63","doi-asserted-by":"crossref","first-page":"211102","DOI":"10.1063\/1.5140005","article-title":"60 A\/W high voltage GaN avalanche photodiode demonstrating robust avalanche and high gain up to 525 K","volume":"116","author":"Ji","year":"2020","journal-title":"Appl. Phys. Lett."},{"key":"ref_64","doi-asserted-by":"crossref","first-page":"211107","DOI":"10.1063\/1.3039061","article-title":"High quantum efficiency back-illuminated GaN avalanche photodiodes","volume":"93","author":"Bayram","year":"2008","journal-title":"Appl. Phys. Lett."},{"key":"ref_65","doi-asserted-by":"crossref","first-page":"123503","DOI":"10.1063\/1.5049621","article-title":"AlGaN ultraviolet Avalanche photodiodes based on a triple-mesa structure","volume":"113","author":"Cai","year":"2018","journal-title":"Appl. Phys. Lett."},{"key":"ref_66","doi-asserted-by":"crossref","first-page":"253516","DOI":"10.1063\/1.4772984","article-title":"Back-illuminated separate absorption and multiplication AlGaN solar-blind avalanche photodiodes","volume":"101","author":"Huang","year":"2012","journal-title":"Appl. Phys. Lett."},{"key":"ref_67","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1109\/JQE.2020.3048701","article-title":"Geiger-Mode Operation of AlGaN Avalanche Photodiodes at 255 nm","volume":"57","author":"Gautam","year":"2021","journal-title":"IEEE J. Quantum Electron."},{"key":"ref_68","doi-asserted-by":"crossref","first-page":"122202","DOI":"10.7567\/APEX.8.122202","article-title":"Comparison of AlGaN p\u2013i\u2013n ultraviolet avalanche photodiodes grown on free-standing GaN and sapphire substrates","volume":"8","author":"Kim","year":"2015","journal-title":"Appl. Phys. Express"},{"key":"ref_69","doi-asserted-by":"crossref","first-page":"1744","DOI":"10.1109\/LPT.2007.906052","article-title":"Performance of Deep Ultraviolet GaN Avalanche Photodiodes Grown by MOCVD","volume":"19","author":"Shen","year":"2007","journal-title":"IEEE Photon. Technol. Lett."},{"key":"ref_70","doi-asserted-by":"crossref","first-page":"1357","DOI":"10.1109\/LPT.2020.3025290","article-title":"Uniform and High Gain GaN p-i-n Ultraviolet APDs Enabled by Beveled-Mesa Edge Termination","volume":"32","author":"Wang","year":"2020","journal-title":"IEEE Photon. Technol. Lett."},{"key":"ref_71","doi-asserted-by":"crossref","first-page":"033507","DOI":"10.1063\/1.2837645","article-title":"High-performance visible-blind GaN-based p-i-n photodetectors","volume":"92","author":"Butun","year":"2008","journal-title":"Appl. Phys. Lett."},{"key":"ref_72","doi-asserted-by":"crossref","first-page":"502","DOI":"10.1109\/16.906443","article-title":"GaN avalanche photodiodes operating in linear-gain mode and Geiger mode","volume":"48","author":"Verghese","year":"2001","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_73","doi-asserted-by":"crossref","first-page":"131110","DOI":"10.1063\/1.3636412","article-title":"GaN\/SiC avalanche photodiodes","volume":"99","author":"Zhou","year":"2011","journal-title":"Appl. Phys. Lett."},{"key":"ref_74","doi-asserted-by":"crossref","first-page":"924","DOI":"10.1063\/1.125631","article-title":"GaN avalanche photodiodes","volume":"76","author":"Carrano","year":"2000","journal-title":"Appl. Phys. Lett."},{"key":"ref_75","doi-asserted-by":"crossref","first-page":"191103","DOI":"10.1063\/1.3515903","article-title":"AlGaN solar-blind avalanche photodiodes with high multiplication gain","volume":"97","author":"Sun","year":"2010","journal-title":"Appl. Phys. Lett."},{"key":"ref_76","doi-asserted-by":"crossref","first-page":"041104","DOI":"10.1063\/1.2759980","article-title":"Geiger-mode operation of back-illuminated GaN avalanche photodiodes","volume":"91","author":"Pau","year":"2007","journal-title":"Appl. Phys. Lett."},{"key":"ref_77","doi-asserted-by":"crossref","first-page":"242105","DOI":"10.1063\/5.0055468","article-title":"Demonstration of AlGaN\/GaN-based ultraviolet phototransistor with a record high responsivity over 3.6 \u00d7 10 7 A\/W","volume":"118","author":"Zhang","year":"2021","journal-title":"Appl. Phys. Lett."},{"key":"ref_78","doi-asserted-by":"crossref","first-page":"114502","DOI":"10.1063\/1.4997605","article-title":"Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors","volume":"123","author":"Armstrong","year":"2018","journal-title":"J. Appl. Phys."},{"key":"ref_79","doi-asserted-by":"crossref","first-page":"2476","DOI":"10.1002\/pssc.201000936","article-title":"Backside illuminated AlGaN-on-Si UV detectors integrated by high density flip-chip bonding","volume":"8","author":"Malinowski","year":"2011","journal-title":"Phys. Status Solidi C"},{"key":"ref_80","doi-asserted-by":"crossref","first-page":"94","DOI":"10.1038\/s41377-021-00527-4","article-title":"Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays","volume":"10","author":"Cai","year":"2021","journal-title":"Light Sci. Appl."},{"key":"ref_81","first-page":"251","article-title":"UV detectors and focal plane array imagers based on AlGaN pin photodiodes","volume":"4","author":"Long","year":"2002","journal-title":"Optoelectron. Rev."},{"key":"ref_82","doi-asserted-by":"crossref","first-page":"011117","DOI":"10.1063\/1.1846936","article-title":"320 \u00d7 256 solar-blind focal plane arrays based on AlxGa1\u2212xN","volume":"86","author":"McClintock","year":"2005","journal-title":"Appl. Phys. Lett."},{"key":"ref_83","doi-asserted-by":"crossref","unstructured":"Aslam, S., Yan, F., Pugel, D.E., Franz, D., Miko, L., Herrero, F., Matsumara, M., Babu, S., and Stahle, C.M. (2005, January 18). Development of Ultra-High Sensitivity Wide-Band Gap UV-EUV Detectors at NASA Goddard Space Flight Center. Proceedings of the SPIE Optics and Photonics, San Diego, CA, USA.","DOI":"10.1117\/12.639415"},{"key":"ref_84","unstructured":"Litton, C.W., Grote, J.G., Morkoc, H., and Madhukar, A. (2023, March 26). Available online: https:\/\/www.spiedigitallibrary.org\/conference-proceedings-of-spie\/6121\/61210R\/Solar-blind-AlGaN-256256-p-i-n-detectors-and-focal\/10.1117\/12.654793.short."},{"key":"ref_85","unstructured":"Meynart, R., Neeck, S.P., Shimoda, H., and Habib, S. (2023, March 26). Available online: https:\/\/ui.adsabs.harvard.edu\/abs\/2007SPIE.6744E..17R\/abstract."},{"key":"ref_86","doi-asserted-by":"crossref","first-page":"820","DOI":"10.1007\/s11431-008-0091-z","article-title":"Development of solar-blind AlGaN 128 \u00d7 128 Ultraviolet Focal Plane Arrays","volume":"51","author":"Yuan","year":"2008","journal-title":"Sci. China Ser. E Technol. Sci."},{"key":"ref_87","doi-asserted-by":"crossref","first-page":"S611","DOI":"10.1002\/pssc.200880764","article-title":"UV imaging based on AlGaN arrays","volume":"6","author":"Duboz","year":"2009","journal-title":"Phys. Status Solidi C"},{"key":"ref_88","doi-asserted-by":"crossref","first-page":"1561","DOI":"10.1109\/LED.2011.2163615","article-title":"AlGaN-on-Si-based 10-\u03bcm pixel-to-pixel pitch hybrid imagers for the EUV range","volume":"32","author":"Malinowski","year":"2011","journal-title":"IEEE Electron Device Lett."},{"key":"ref_89","doi-asserted-by":"crossref","first-page":"181113","DOI":"10.1063\/1.4828497","article-title":"Al x Ga 1\u2212x N-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate","volume":"103","author":"Cicek","year":"2013","journal-title":"Appl. Phys. Lett."},{"key":"ref_90","doi-asserted-by":"crossref","unstructured":"Razeghi, M., Temple, D.S., and Brown, G.J. (2023, March 26). Available online: https:\/\/www.spiedigitallibrary.org\/conference-proceedings-of-spie\/9555\/955502\/Solar-blind-photodetectors-and-focal-plane-arrays-based-on-AlGaN\/10.1117\/12.2195390.short.","DOI":"10.1117\/12.2195390"},{"key":"ref_91","doi-asserted-by":"crossref","first-page":"1900769","DOI":"10.1002\/pssa.201900769","article-title":"Toward AlGaN Focal Plane Arrays for Solar-Blind Ultraviolet Detection","volume":"217","author":"Rehm","year":"2020","journal-title":"Phys. Status Solidi"},{"key":"ref_92","doi-asserted-by":"crossref","first-page":"23457","DOI":"10.1038\/srep23457","article-title":"A new approach for fabrications of SiC based photodetectors","volume":"6","author":"Aldalbahi","year":"2016","journal-title":"Sci. Rep."},{"key":"ref_93","doi-asserted-by":"crossref","unstructured":"Gerhardt, R. (2011). Properties and Applications of Silicon Carbide, InTech.","DOI":"10.5772\/615"},{"key":"ref_94","doi-asserted-by":"crossref","first-page":"R33","DOI":"10.1088\/0268-1242\/18\/4\/201","article-title":"Wide-bandgap semiconductor ultraviolet photodetectors","volume":"18","author":"Monroy","year":"2003","journal-title":"Semicond. Sci. Technol."},{"key":"ref_95","doi-asserted-by":"crossref","first-page":"3120","DOI":"10.1364\/OL.30.003120","article-title":"Response of a SiC photodiode to extreme ultraviolet through visible radiation","volume":"30","author":"Seely","year":"2005","journal-title":"Opt. Lett."},{"key":"ref_96","doi-asserted-by":"crossref","first-page":"P10010","DOI":"10.1088\/1748-0221\/11\/10\/P10010","article-title":"Towards a high performing UV-A sensor based on Silicon Carbide and hydrogenated Silicon Nitride absorbing layers","volume":"11","author":"Mazzillo","year":"2016","journal-title":"J. Instrum."},{"key":"ref_97","doi-asserted-by":"crossref","first-page":"377","DOI":"10.1109\/JSEN.2010.2073462","article-title":"4H-SiC Schottky Photodiode Based Demonstrator Board for UV-Index Monitoring","volume":"11","author":"Mazzillo","year":"2011","journal-title":"IEEE Sens. J."},{"key":"ref_98","doi-asserted-by":"crossref","first-page":"267","DOI":"10.1049\/el:20000244","article-title":"Improved Ni\/SiC Schottky diode formation","volume":"36","author":"Kestle","year":"2000","journal-title":"Electron. Lett."},{"key":"ref_99","doi-asserted-by":"crossref","first-page":"395","DOI":"10.1016\/S0921-5107(98)00541-8","article-title":"Electrical characterization of inhomogeneous Ti\/4H\u2013SiC Schottky contacts","volume":"61\u201362","author":"Defives","year":"1999","journal-title":"Mater. Sci. Eng. B"},{"key":"ref_100","doi-asserted-by":"crossref","first-page":"2237","DOI":"10.1016\/S0038-1101(02)00234-4","article-title":"4H-SiC metal\u2013semiconductor\u2013metal ultraviolet photodetectors with Ni\/ITO electrodes","volume":"46","author":"Su","year":"2002","journal-title":"Solid-State Electron."},{"key":"ref_101","doi-asserted-by":"crossref","first-page":"1586","DOI":"10.1109\/LED.2012.2214759","article-title":"4H-SiC metal-semiconductor-metal ultraviolet photodetectors in operation of 450C","volume":"33","author":"Lien","year":"2012","journal-title":"IEEE Electron Device Lett."},{"key":"ref_102","doi-asserted-by":"crossref","first-page":"251102","DOI":"10.1063\/1.2949318","article-title":"High-performance 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors with Al2O3\u2215SiO2 films","volume":"92","author":"Zhang","year":"2008","journal-title":"Appl. Phys. Lett."},{"key":"ref_103","doi-asserted-by":"crossref","first-page":"59","DOI":"10.1016\/j.mssp.2008.11.001","article-title":"Effects of annealing on the performance of 4H-SiC metal\u2013semiconductor\u2013metal ultraviolet photodetectors","volume":"11","author":"Yang","year":"2008","journal-title":"Mater. Sci. Semicond. Process."},{"key":"ref_104","doi-asserted-by":"crossref","first-page":"191101","DOI":"10.1063\/5.0090219","article-title":"Highly efficient UV detection in a metal\u2013semiconductor\u2013metal detector with epigraphene","volume":"120","author":"He","year":"2022","journal-title":"Appl. Phys. Lett."},{"key":"ref_105","doi-asserted-by":"crossref","first-page":"182","DOI":"10.1016\/j.optcom.2014.07.071","article-title":"High-performance 4H-SiC-based p-i-n ultraviolet photodiode and investigation of its capacitance characteristics","volume":"333","author":"Cai","year":"2014","journal-title":"Opt. Commun."},{"key":"ref_106","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1109\/JPHOT.2017.2651585","article-title":"UV-A Sensor Based on 6H-SiC Schottky Photodiode","volume":"9","author":"Sciuto","year":"2017","journal-title":"IEEE Photon. J."},{"key":"ref_107","doi-asserted-by":"crossref","first-page":"21657","DOI":"10.1364\/OE.23.021657","article-title":"Electrical and ultraviolet characterization of 4H-SiC Schottky photodiodes","volume":"23","author":"Lioliou","year":"2015","journal-title":"Opt. Express"},{"key":"ref_108","doi-asserted-by":"crossref","first-page":"1858","DOI":"10.1109\/JSEN.2014.2367546","article-title":"Electro-Optical Characterization of Patterned Thin Metal Film Ni2Si\u20134H SiC Schottky Photodiodes for Ultraviolet Light Detection","volume":"15","author":"Mazzillo","year":"2015","journal-title":"IEEE Sens. J."},{"key":"ref_109","first-page":"040602","article-title":"High-temperature and reliability performance of 4H-SiC Schottky-barrier photodiodes for UV detection","volume":"33","author":"Xu","year":"2015","journal-title":"J. Vac. Sci. Technol. B Nanotechnol. Microelectron. Mater. Process. Meas. Phenom."},{"key":"ref_110","doi-asserted-by":"crossref","first-page":"024505","DOI":"10.1063\/1.2747213","article-title":"High-performance 4H-SiC-based ultraviolet p-i-n photodetector","volume":"102","author":"Chen","year":"2007","journal-title":"J. Appl. Phys."},{"key":"ref_111","doi-asserted-by":"crossref","unstructured":"Megherbi, M.L., Bencherif, H., Dehimi, L., Mallemace, E.D., Rao, S., Pezzimenti, F., and Della Corte, F.G. (2021). An Efficient 4H-SiC Photodiode for UV Sensing Applications. Electronics, 10.","DOI":"10.3390\/electronics10202517"},{"key":"ref_112","doi-asserted-by":"crossref","first-page":"2508","DOI":"10.1109\/LPT.2006.887211","article-title":"Demonstration of Ultraviolet 6H-SiC PIN Avalanche Photodiodes","volume":"18","author":"Liu","year":"2006","journal-title":"IEEE Photon. Technol. Lett."},{"key":"ref_113","first-page":"1","article-title":"4H-SiC SACM Avalanche Photodiode with Low Breakdown Voltage and High UV Detection Efficiency","volume":"8","author":"Cai","year":"2016","journal-title":"IEEE Photon. J."},{"key":"ref_114","doi-asserted-by":"crossref","first-page":"1159","DOI":"10.1109\/JQE.2007.905031","article-title":"High Detection Sensitivity of Ultraviolet 4H-SiC Avalanche Photodiodes","volume":"43","author":"Bai","year":"2007","journal-title":"IEEE J. Quantum Electron."},{"key":"ref_115","doi-asserted-by":"crossref","first-page":"7","DOI":"10.1016\/j.sse.2008.09.002","article-title":"4H\u2013SiC ultraviolet avalanche photodetectors with low breakdown voltage and high gain","volume":"53","author":"Zhu","year":"2009","journal-title":"Solid-State Electron."},{"key":"ref_116","doi-asserted-by":"crossref","first-page":"4460","DOI":"10.1109\/JSEN.2017.2711643","article-title":"Fully Planar 4H-SiC Avalanche Photodiode with Low Breakdown Voltage","volume":"17","author":"Sciuto","year":"2017","journal-title":"IEEE Sens. J."},{"key":"ref_117","doi-asserted-by":"crossref","first-page":"1724","DOI":"10.1109\/LED.2018.2871798","article-title":"Large-Area 4H-SiC Ultraviolet Avalanche Photodiodes Based on Variable-Temperature Reflow Technique","volume":"39","author":"Zhou","year":"2018","journal-title":"IEEE Electron Device Lett."},{"key":"ref_118","doi-asserted-by":"crossref","first-page":"1136","DOI":"10.1109\/LPT.2014.2316793","article-title":"High-Temperature Single Photon Detection Performance of 4H-SiC Avalanche Photodiodes","volume":"26","author":"Zhou","year":"2014","journal-title":"IEEE Photon. Technol. Lett."},{"key":"ref_119","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1109\/JPHOT.2017.2780197","article-title":"4H\u2013SiC Avalanche Photodiode Linear Array Operating in Geiger Mode","volume":"9","author":"Li","year":"2017","journal-title":"IEEE Photon. J."},{"key":"ref_120","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1049\/el:20057320","article-title":"Demonstration of 4H-SiC UV single photon counting avalanche photodiode","volume":"41","author":"Xin","year":"2005","journal-title":"Electron. Lett."},{"key":"ref_121","doi-asserted-by":"crossref","first-page":"1507","DOI":"10.1109\/LPT.2005.848399","article-title":"Geiger mode operation of ultraviolet 4H-SiC avalanche photodiodes","volume":"17","author":"Beck","year":"2005","journal-title":"IEEE Photon. Technol. Lett."},{"key":"ref_122","doi-asserted-by":"crossref","unstructured":"Omn\u00e8s, F., Monroy, E., Mu\u00f1oz, E., and Reverchon, J.-L. (2007, January 8). Wide Bandgap UV Photodetectors: A Short Review of Devices and Applications. Proceedings of the SPIE Integrated Optoelectronic Devices, San Jose, CA, USA.","DOI":"10.1117\/12.705393"},{"key":"ref_123","doi-asserted-by":"crossref","first-page":"147","DOI":"10.1016\/j.mssp.2018.01.007","article-title":"Recent advances in diamond power semiconductor devices","volume":"78","author":"Umezawa","year":"2018","journal-title":"Mater. Sci. Semicond. Process."},{"key":"ref_124","doi-asserted-by":"crossref","first-page":"22","DOI":"10.1016\/S1369-7021(07)70349-8","article-title":"Diamond as an electronic material","volume":"11","author":"Wort","year":"2008","journal-title":"Mater. Today"},{"key":"ref_125","doi-asserted-by":"crossref","first-page":"1800359","DOI":"10.1002\/adom.201800359","article-title":"Optoelectronic Diamond: Growth, Properties, and Photodetection Applications","volume":"6","author":"Lu","year":"2018","journal-title":"Adv. Opt. Mater."},{"key":"ref_126","doi-asserted-by":"crossref","first-page":"29","DOI":"10.1080\/26941112.2021.1877019","article-title":"Progress in semiconductor diamond photodetectors and MEMS sensors","volume":"1","author":"Liao","year":"2021","journal-title":"Funct. Diam."},{"key":"ref_127","doi-asserted-by":"crossref","first-page":"113509","DOI":"10.1063\/1.2349829","article-title":"High-performance metal-semiconductor-metal deep-ultraviolet photodetectors based on homoepitaxial diamond thin film","volume":"89","author":"Liao","year":"2006","journal-title":"Appl. Phys. Lett."},{"key":"ref_128","doi-asserted-by":"crossref","first-page":"126602","DOI":"10.1103\/PhysRevLett.94.126602","article-title":"Space-Charge Limited Photocurrent","volume":"94","author":"Mihailetchi","year":"2005","journal-title":"Phys. Rev. Lett."},{"key":"ref_129","doi-asserted-by":"crossref","first-page":"1800068","DOI":"10.1002\/adom.201800068","article-title":"Diamond-Based All-Carbon Photodetectors for Solar-Blind Imaging","volume":"6","author":"Lin","year":"2018","journal-title":"Adv. Opt. Mater."},{"key":"ref_130","doi-asserted-by":"crossref","first-page":"1020","DOI":"10.1016\/0925-9635(93)90267-6","article-title":"Diamond metal-semiconductor-metal ultraviolet photodetectors","volume":"2","author":"Binari","year":"1993","journal-title":"Diam. Relat. Mater."},{"key":"ref_131","unstructured":"Dominik, M., Koba, M., Bogdanowicz, R., Bock, W.J., and \u015amietana, M. (2023, March 26). Available online: https:\/\/link.springer.com\/chapter\/10.1007\/978-3-319-42625-9_5."},{"key":"ref_132","doi-asserted-by":"crossref","first-page":"193509","DOI":"10.1063\/1.1927709","article-title":"Extreme ultraviolet single-crystal diamond detectors by chemical vapor deposition","volume":"86","author":"Balducci","year":"2005","journal-title":"Appl. Phys. Lett."},{"key":"ref_133","doi-asserted-by":"crossref","first-page":"113507","DOI":"10.1063\/1.2048807","article-title":"Large deep-ultraviolet photocurrent in metal-semiconductor-metal structures fabricated on as-grown boron-doped diamond","volume":"87","author":"Alvarez","year":"2005","journal-title":"Appl. Phys. Lett."},{"key":"ref_134","doi-asserted-by":"crossref","first-page":"468","DOI":"10.1002\/pssa.200925042","article-title":"Study on trapping center and trapping effect in MSM ultraviolet photo-detector on microcrystalline diamond film","volume":"207","author":"Wang","year":"2010","journal-title":"Phys. Status Solidi"},{"key":"ref_135","doi-asserted-by":"crossref","first-page":"123507","DOI":"10.1063\/1.2715440","article-title":"Single Schottky-barrier photodiode with interdigitated-finger geometry: Application to diamond","volume":"90","author":"Liao","year":"2007","journal-title":"Appl. Phys. Lett."},{"key":"ref_136","doi-asserted-by":"crossref","first-page":"913","DOI":"10.1088\/0957-0233\/17\/4\/042","article-title":"Radiometric characteristics of new diamond PIN photodiodes","volume":"17","author":"BenMoussa","year":"2006","journal-title":"Meas. Sci. Technol."},{"key":"ref_137","doi-asserted-by":"crossref","first-page":"494","DOI":"10.1016\/j.diamond.2006.09.025","article-title":"UV detection for excimer lamps using CVD diamond in various gaseous atmospheres","volume":"16","author":"Yu","year":"2007","journal-title":"Diam. Relat. Mater."},{"key":"ref_138","doi-asserted-by":"crossref","first-page":"458","DOI":"10.1016\/S0925-9635(01)00594-5","article-title":"Optimised contact-structures for metal\u2013diamond\u2013metal UV-detectors","volume":"11","author":"Salvatori","year":"2002","journal-title":"Diam. Relat. Mater."},{"key":"ref_139","doi-asserted-by":"crossref","first-page":"361","DOI":"10.1016\/S0925-9635(96)00757-1","article-title":"Photoelectrical characteristics of diamond UV detectors: Dependence on device design and film quality","volume":"6","author":"Salvatori","year":"1997","journal-title":"Diam. Relat. Mater."},{"key":"ref_140","doi-asserted-by":"crossref","first-page":"224","DOI":"10.1109\/LED.2011.2176907","article-title":"Diamond Detectors for UV and X-Ray Source Imaging","volume":"33","author":"Girolami","year":"2012","journal-title":"IEEE Electron Device Lett."},{"key":"ref_141","doi-asserted-by":"crossref","first-page":"2424","DOI":"10.1002\/pssa.201532191","article-title":"Mosaic diamond detectors for fast neutrons and large ionizing radiation fields","volume":"212","author":"Girolami","year":"2015","journal-title":"Phys. Status Solidi"},{"key":"ref_142","doi-asserted-by":"crossref","first-page":"100883","DOI":"10.1016\/j.mtphys.2022.100883","article-title":"Review of self-powered solar-blind photodetectors based on Ga2O3","volume":"28","author":"Wu","year":"2022","journal-title":"Mater. Today Phys."},{"key":"ref_143","doi-asserted-by":"crossref","first-page":"381","DOI":"10.1364\/PRJ.7.000381","article-title":"Review of gallium-oxide-based solar-blind ultraviolet photodetectors","volume":"7","author":"Chen","year":"2019","journal-title":"Photon. Res."},{"key":"ref_144","doi-asserted-by":"crossref","first-page":"3","DOI":"10.1007\/s43673-021-00033-0","article-title":"\u03b2-Ga2O3 material properties, growth technologies, and devices: A review","volume":"32","author":"Higashiwaki","year":"2022","journal-title":"AAPPS Bull."},{"key":"ref_145","doi-asserted-by":"crossref","first-page":"1573","DOI":"10.1039\/D1TC05101F","article-title":"Current advances in solar-blind photodetection technology: Using Ga2O3 and AlGaN","volume":"10","author":"Varshney","year":"2022","journal-title":"J. Mater. Chem. C"},{"key":"ref_146","doi-asserted-by":"crossref","first-page":"13554","DOI":"10.1364\/OE.23.013554","article-title":"High gain Ga2O3 solar-blind photodetectors realized via a carrier multiplication process","volume":"23","author":"Hu","year":"2015","journal-title":"Opt. Express"},{"key":"ref_147","doi-asserted-by":"crossref","first-page":"3988","DOI":"10.1021\/acs.nanolett.5b00906","article-title":"Solar-Blind Avalanche Photodetector Based on Single ZnO\u2013Ga2O3 Core\u2013Shell Microwire","volume":"15","author":"Zhao","year":"2015","journal-title":"Nano Lett."},{"key":"ref_148","doi-asserted-by":"crossref","first-page":"10725","DOI":"10.1002\/adma.201604049","article-title":"Graphene- \u03b2 -Ga2O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application","volume":"28","author":"Kong","year":"2016","journal-title":"Adv. Mater."},{"key":"ref_149","doi-asserted-by":"crossref","first-page":"65","DOI":"10.1016\/j.solmat.2016.03.015","article-title":"Solar blind avalanche photodetector based on the cation exchange growth of \u03b2-Ga2O3\/SnO2 bilayer heterostructure thin film","volume":"152","author":"Mahmoud","year":"2016","journal-title":"Sol. Energy Mater. Sol. Cells"},{"key":"ref_150","doi-asserted-by":"crossref","first-page":"36997","DOI":"10.1021\/acsami.7b09812","article-title":"Solar-Blind Photodetector with High Avalanche Gains and Bias-Tunable Detecting Functionality Based on Metastable Phase \u03b1-Ga2O3\/ZnO Isotype Heterostructures","volume":"9","author":"Chen","year":"2017","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_151","doi-asserted-by":"crossref","first-page":"22419","DOI":"10.1021\/acsami.8b05336","article-title":"High-Performance Graphene\/\u03b2-Ga2O3 Heterojunction Deep-Ultraviolet Photodetector with Hot-Electron Excited Carrier Multiplication","volume":"10","author":"Lin","year":"2018","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_152","doi-asserted-by":"crossref","first-page":"1906040","DOI":"10.1002\/adfm.201906040","article-title":"3D Solar-Blind Ga2O3 Photodetector Array Realized Via Origami Method","volume":"29","author":"Chen","year":"2019","journal-title":"Adv. Funct. Mater."},{"key":"ref_153","doi-asserted-by":"crossref","first-page":"18516","DOI":"10.1021\/acs.jpcc.9b02608","article-title":"Avalanche Gain in Metal\u2013Semiconductor\u2013Metal Ga 2 O 3 Solar-Blind Photodiodes","volume":"123","author":"Qiao","year":"2019","journal-title":"J. Phys. Chem. C"},{"key":"ref_154","doi-asserted-by":"crossref","first-page":"5731","DOI":"10.1364\/OE.380017","article-title":"Localized surface plasmon enhanced Ga2O3 solar blind photodetectors","volume":"28","author":"Tang","year":"2020","journal-title":"Opt. Express"},{"key":"ref_155","first-page":"997","article-title":"Fast Speed Ga2O3 Solar-blind Schottky Photodiodes with Large Sensitive Area","volume":"41","author":"Xu","year":"2020","journal-title":"IEEE Electron Device Lett."},{"key":"ref_156","doi-asserted-by":"crossref","first-page":"261101","DOI":"10.1063\/5.0030400","article-title":"Highly selective ozone-treated \u03b2-Ga2O3 solar-blind deep-UV photodetectors","volume":"117","author":"Kim","year":"2020","journal-title":"Appl. Phys. Lett."},{"key":"ref_157","doi-asserted-by":"crossref","first-page":"1794","DOI":"10.1109\/LED.2020.3032290","article-title":"High-Performance \u03b2-Ga2O3 Solar-Blind Schottky Barrier Photodiode with Record Detectivity and Ultrahigh Gain via Carrier Multiplication Process","volume":"41","author":"Li","year":"2020","journal-title":"IEEE Electron Device Lett."},{"key":"ref_158","doi-asserted-by":"crossref","first-page":"557","DOI":"10.1021\/acsphotonics.0c01579","article-title":"Ultrahigh Deep-Ultraviolet Responsivity of a \u03b2-Ga2O3\/MgO Heterostructure-Based Phototransistor","volume":"8","author":"Ahn","year":"2021","journal-title":"ACS Photon."},{"key":"ref_159","doi-asserted-by":"crossref","first-page":"383","DOI":"10.1109\/LED.2021.3050107","article-title":"High-Detectivity \u03b2 -Ga\u2082O\u2083 Microflake Solar-Blind Phototransistor for Weak Light Detection","volume":"42","author":"Yu","year":"2021","journal-title":"IEEE Electron Device Lett."},{"key":"ref_160","doi-asserted-by":"crossref","first-page":"545","DOI":"10.1109\/LED.2021.3061509","article-title":"High Performance \u03b2-Ga2O3 Solar-Blind Metal\u2013Oxide\u2013Semiconductor Field-Effect Phototransistor with Hafnium Oxide Gate Dielectric Process","volume":"42","author":"Li","year":"2021","journal-title":"IEEE Electron Device Lett."},{"key":"ref_161","doi-asserted-by":"crossref","unstructured":"Zhou, S., Zheng, Q., Yu, C., Huang, Z., Chen, L., Zhang, H., Li, H., Xiong, Y., Kong, C., and Ye, L. (2022). A High-Performance \u03b5-Ga2O3-Based Deep-Ultraviolet Photodetector Array for Solar-Blind Imaging. Materials, 16.","DOI":"10.3390\/ma16010295"},{"key":"ref_162","doi-asserted-by":"crossref","first-page":"2443","DOI":"10.1109\/TED.2022.3156891","article-title":"Ga\u2082O\u2083\/V\u2082O\u2085 Oxide Heterojunction Photovoltaic Photodetector with Superhigh Solar-Blind Spectral Discriminability","volume":"69","author":"Li","year":"2022","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_163","doi-asserted-by":"crossref","first-page":"418","DOI":"10.1038\/s41467-023-36117-8","article-title":"Enhanced gain and detectivity of unipolar barrier solar blind avalanche photodetector via lattice and band engineering","volume":"14","author":"Zhang","year":"2023","journal-title":"Nat. Commun."},{"key":"ref_164","doi-asserted-by":"crossref","first-page":"022527","DOI":"10.1063\/1.5064471","article-title":"Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial \u03b2-Ga2O3 thin film","volume":"7","author":"Alema","year":"2019","journal-title":"APL Mater."},{"key":"ref_165","doi-asserted-by":"crossref","first-page":"805","DOI":"10.1109\/LED.2023.3262000","article-title":"Overestimating the Performance of Photon Ultraviolet Detectors","volume":"44","author":"Rogalski","year":"2023","journal-title":"Electron. Devices Lett."},{"key":"ref_166","doi-asserted-by":"crossref","first-page":"3424","DOI":"10.1063\/1.1576309","article-title":"Compositionally-tuned epitaxial cubic MgxZn1\u2212xO on Si(100) for deep ultraviolet photodetectors","volume":"82","author":"Yang","year":"2003","journal-title":"Appl. Phys. Lett."},{"key":"ref_167","doi-asserted-by":"crossref","first-page":"283001","DOI":"10.1088\/0022-3727\/47\/28\/283001","article-title":"Semiconductor ultraviolet photodetectors based on ZnO and MgxZn1\u2212xO","volume":"47","author":"Hou","year":"2014","journal-title":"J. Phys. D Appl. Phys."},{"key":"ref_168","doi-asserted-by":"crossref","first-page":"047308","DOI":"10.1088\/1674-1056\/26\/4\/047308","article-title":"Recent progress of ZnMgO ultraviolet photodetector","volume":"26","author":"Yang","year":"2017","journal-title":"Chin. Phys. B"},{"key":"ref_169","doi-asserted-by":"crossref","first-page":"1529","DOI":"10.1021\/nl100665r","article-title":"Semiconductor Nanowire: What\u2019s Next?","volume":"10","author":"Yang","year":"2010","journal-title":"Nano Lett."},{"key":"ref_170","doi-asserted-by":"crossref","first-page":"126101","DOI":"10.1088\/1674-1056\/27\/12\/126101","article-title":"Review of improved spectral response of ultraviolet photodetectors by surface plasmon","volume":"27","author":"Wu","year":"2018","journal-title":"Chin. Phys. B"},{"key":"ref_171","doi-asserted-by":"crossref","first-page":"493","DOI":"10.1016\/j.mattod.2015.06.001","article-title":"New concept ultraviolet photodetectors","volume":"18","author":"Chen","year":"2015","journal-title":"Mater. Today"},{"key":"ref_172","doi-asserted-by":"crossref","first-page":"133002","DOI":"10.1088\/1361-6463\/ac33d7","article-title":"Recent advances in UV photodetectors based on 2D materials: A review","volume":"55","author":"Kumar","year":"2022","journal-title":"J. Phys. D Appl. Phys."},{"key":"ref_173","doi-asserted-by":"crossref","first-page":"031315","DOI":"10.1063\/5.0058482","article-title":"Self-powered UV photodetectors based on ZnO nanomaterials","volume":"8","author":"Ouyang","year":"2021","journal-title":"Appl. Phys. Rev."},{"key":"ref_174","doi-asserted-by":"crossref","unstructured":"Lin, H., Jiang, A., Xing, S., Li, L., Cheng, W., Li, J., Miao, W., Zhou, X., and Tian, L. (2022). Advances in Self-Powered Ultraviolet Photodetectors Based on P-N Heterojunction Low-Dimensional Nanostructures. Nanomaterials, 12.","DOI":"10.3390\/nano12060910"},{"key":"ref_175","doi-asserted-by":"crossref","first-page":"20210078","DOI":"10.1002\/EXP.20210078","article-title":"Recent advances in self-powered and flexible UVC photodetectors","volume":"2","author":"Nguyen","year":"2022","journal-title":"Exploration"},{"key":"ref_176","doi-asserted-by":"crossref","first-page":"5574","DOI":"10.1021\/acsami.6b14430","article-title":"Highly Wavelength-Selective Enhancement of Responsivity in Ag Nanoparticle-Modified ZnO UV Photodetector","volume":"9","author":"Wang","year":"2017","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_177","doi-asserted-by":"crossref","first-page":"021112","DOI":"10.1063\/1.4905929","article-title":"High-performance AlGaN metal\u2013semiconductor\u2013metal solar-blind ultraviolet photodetectors by localized surface plasmon enhancement","volume":"106","author":"Zhang","year":"2015","journal-title":"Appl. Phys. Lett."},{"key":"ref_178","doi-asserted-by":"crossref","first-page":"315201","DOI":"10.1088\/0957-4484\/21\/31\/315201","article-title":"Visible-blind photodetector based on p\u2013i\u2013n junction GaN nanowire ensembles","volume":"21","author":"Tchernycheva","year":"2010","journal-title":"Nanotechnology"},{"key":"ref_179","doi-asserted-by":"crossref","first-page":"2368","DOI":"10.1038\/srep02368","article-title":"Arbitrary Multicolor Photodetection by Hetero-integrated Semiconductor Nanostructures","volume":"3","author":"Sang","year":"2013","journal-title":"Sci. Rep."},{"key":"ref_180","doi-asserted-by":"crossref","first-page":"2204021","DOI":"10.1002\/smll.202204021","article-title":"Vertical Barrier Heterostructures for Reliable, Robust, and High-Performance Ultraviolet Detection","volume":"18","author":"Wang","year":"2022","journal-title":"Small"},{"key":"ref_181","doi-asserted-by":"crossref","unstructured":"Yuan, D., Wan, L., Zhang, H., Jiang, J., Liu, B., Li, Y., Su, Z., and Zhai, J. (2022). An Internal-Electrostatic-Field-Boosted Self-Powered Ultraviolet Photodetector. Nanomaterials, 12.","DOI":"10.2139\/ssrn.4142114"},{"key":"ref_182","doi-asserted-by":"crossref","first-page":"2059","DOI":"10.1039\/C9NA00130A","article-title":"Zinc oxide ultraviolet photodetectors: Rapid progress from conventional to self-powered photodetectors","volume":"1","year":"2019","journal-title":"Nanoscale Adv."},{"key":"ref_183","doi-asserted-by":"crossref","first-page":"3334","DOI":"10.1039\/C8TC00550H","article-title":"Efficiency enhancement of TiO2 self-powered UV photodetectors using a transparent Ag nanowire electrode","volume":"6","author":"Xu","year":"2018","journal-title":"J. Mater. Chem. C"},{"key":"ref_184","doi-asserted-by":"crossref","first-page":"10794","DOI":"10.1002\/adma.201603573","article-title":"A Self-Powered, Sub-nanosecond-Response Solution-Processed Hybrid Perovskite Photodetector for Time-Resolved Photoluminescence-Lifetime Detection","volume":"28","author":"Shen","year":"2016","journal-title":"Adv. Mater."},{"key":"ref_185","doi-asserted-by":"crossref","first-page":"232112","DOI":"10.1063\/1.4839495","article-title":"Reliable self-powered highly spectrum-selective ZnO ultraviolet photodetectors","volume":"103","author":"Shen","year":"2013","journal-title":"Appl. Phys. Lett."},{"key":"ref_186","doi-asserted-by":"crossref","first-page":"4445","DOI":"10.1039\/c3tc30525b","article-title":"Self-powered spectrum-selective photodetectors fabricated from n-ZnO\/p-NiO core\u2013shell nanowire arrays","volume":"1","author":"Ni","year":"2013","journal-title":"J. Mater. Chem. C"},{"key":"ref_187","doi-asserted-by":"crossref","first-page":"954","DOI":"10.1021\/accountsmr.1c00170","article-title":"Low-Dimensional Nanostructure Based Flexible Photodetectors: Device Configuration, Functional Design, Integration, and Applications","volume":"2","author":"Li","year":"2021","journal-title":"Acc. Mater. Res."},{"key":"ref_188","doi-asserted-by":"crossref","first-page":"15546","DOI":"10.1007\/s10854-022-08460-x","article-title":"Highly transparent oxide-based ultraviolet photodetectors for flexible electronics","volume":"33","author":"Li","year":"2022","journal-title":"J. Mater. Sci. Mater. Electron."},{"key":"ref_189","doi-asserted-by":"crossref","first-page":"214","DOI":"10.1186\/1556-276X-7-214","article-title":"Bending effects of ZnO nanorod metal\u2013semiconductor\u2013metal photodetectors on flexible polyimide substrate","volume":"7","author":"Chen","year":"2012","journal-title":"Nanoscale Res. Lett."},{"key":"ref_190","doi-asserted-by":"crossref","first-page":"3522","DOI":"10.1021\/acsaelm.0c00556","article-title":"Flexible Ultraviolet Photodetectors Based on One-Dimensional Gallium-Doped Zinc Oxide Nanostructures","volume":"2","author":"Young","year":"2020","journal-title":"ACS Appl. Electron. Mater."},{"key":"ref_191","doi-asserted-by":"crossref","first-page":"24064","DOI":"10.1021\/acsami.8b06861","article-title":"Flexible Narrowband Ultraviolet Photodetectors with Photomultiplication Based on Wide Band Gap Conjugated Polymer and Inorganic Nanoparticles","volume":"10","author":"Zhang","year":"2018","journal-title":"ACS Appl. Mater. Interfaces"}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/23\/9\/4452\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,10]],"date-time":"2025-10-10T19:28:26Z","timestamp":1760124506000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/23\/9\/4452"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,5,2]]},"references-count":191,"journal-issue":{"issue":"9","published-online":{"date-parts":[[2023,5]]}},"alternative-id":["s23094452"],"URL":"https:\/\/doi.org\/10.3390\/s23094452","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2023,5,2]]}}}