{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,4]],"date-time":"2026-03-04T07:16:51Z","timestamp":1772608611303,"version":"3.50.1"},"reference-count":26,"publisher":"MDPI AG","issue":"9","license":[{"start":{"date-parts":[[2023,5,4]],"date-time":"2023-05-04T00:00:00Z","timestamp":1683158400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>A lateral overflow integration capacitor (LOFIC) complementary metal oxide semiconductor (CMOS) image sensor can realize high-dynamic-range (HDR) imaging with combination of a low-conversion-gain (LCG) signal for large maximum signal electrons and a high-conversion-gain (HCG) signal for electron-referred noise floor. However, LOFIC-CMOS image sensor requires a two-channel read-out chain for LCG and HCG signals whose polarities are inverted. In order to provide an area-efficient LOFIC-CMOS image sensor, a one-channel read-out chain that can process both HCG and LCG signals is presented in this paper. An up\/down double-sampling circuit composed of an inverting amplifier for HCG signals and a non-inverting attenuator for LCG signals can reduce the area of the read-out chain by half compared to the conventional two-channel read-out chain. A test chip is fabricated in a 0.18 \u03bcm CMOS process with a metal\u2013insulator\u2013metal (MIM) capacitor, achieving a readout noise of 130 \u03bcVrms for the HCG signal and 1.19 V for the LCG input window. The performance is equivalent to 103 dB of the dynamic range with our previous LOFIC pixel in which HCG and LCG conversion gains are, respectively, 160 \u03bcV\/e\u2212 and 10 \u03bcV\/e\u2212.<\/jats:p>","DOI":"10.3390\/s23094478","type":"journal-article","created":{"date-parts":[[2023,5,5]],"date-time":"2023-05-05T02:56:51Z","timestamp":1683255411000},"page":"4478","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":9,"title":["An Area-Efficient up\/down Double-Sampling Circuit for a LOFIC CMOS Image Sensor"],"prefix":"10.3390","volume":"23","author":[{"ORCID":"https:\/\/orcid.org\/0009-0006-0687-3381","authenticated-orcid":false,"given":"Ai","family":"Otani","sequence":"first","affiliation":[{"name":"Research Organization of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu 525-8577, Japan"}]},{"given":"Hiroaki","family":"Ogawa","sequence":"additional","affiliation":[{"name":"Research Organization of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu 525-8577, Japan"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2732-7957","authenticated-orcid":false,"given":"Ken","family":"Miyauchi","sequence":"additional","affiliation":[{"name":"Brillnics Japan Inc., 6-21-12 Minami-Oi, Shinagawa-ku, Tokyo 140-0013, Japan"}]},{"given":"Sangman","family":"Han","sequence":"additional","affiliation":[{"name":"Brillnics Japan Inc., 6-21-12 Minami-Oi, Shinagawa-ku, Tokyo 140-0013, Japan"}]},{"given":"Hideki","family":"Owada","sequence":"additional","affiliation":[{"name":"Brillnics Japan Inc., 6-21-12 Minami-Oi, Shinagawa-ku, Tokyo 140-0013, Japan"}]},{"given":"Isao","family":"Takayanagi","sequence":"additional","affiliation":[{"name":"Brillnics Japan Inc., 6-21-12 Minami-Oi, Shinagawa-ku, Tokyo 140-0013, Japan"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6422-3703","authenticated-orcid":false,"given":"Shunsuke","family":"Okura","sequence":"additional","affiliation":[{"name":"Research Organization of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu 525-8577, Japan"}]}],"member":"1968","published-online":{"date-parts":[[2023,5,4]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"2815","DOI":"10.1109\/TED.2022.3164370","article-title":"HDR CMOS Image Sensors for Automotive Applications","volume":"69","author":"Takayanagi","year":"2022","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_2","unstructured":"Takayanagi, I. (2020). A Study on Intra-Scene Single-Exposure High-Dynamic Range CMOS Image Sensor Technologies. [Ph.D. Thesis, Tohoku University]."},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"932","DOI":"10.1109\/4.848200","article-title":"A high-dynamic-range CMOS image sensor for automotive applications","volume":"35","author":"Schanz","year":"2000","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"011007","DOI":"10.1117\/1.3267100","article-title":"Extended use of incremental signal-to-noise ratio as reliability criterion for multiple-slope wide-dynamic-range image capture","volume":"19","author":"Hertel","year":"2010","journal-title":"J. Electron. Imaging"},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"41","DOI":"10.1109\/JSSC.1984.1052084","article-title":"A novel wide dynamic range silicon photodetector and linear imaging array","volume":"19","author":"Chamberlain","year":"1984","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"1716","DOI":"10.1109\/16.628827","article-title":"Random addressable 2048\/spl times\/2048 active pixel image sensor","volume":"44","author":"Scheffer","year":"1997","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"2528","DOI":"10.1109\/TED.2015.2446992","article-title":"Voltage Mode FPN Calibration in the Logarithmic CMOS Imager","volume":"62","author":"Souza","year":"2015","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"2081","DOI":"10.1109\/4.735551","article-title":"A 256\/spl times\/256 CMOS imaging array with wide dynamic range pixels and column-parallel digital output","volume":"33","author":"Decker","year":"1998","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_9","unstructured":"Komobuchi, H. (1995, January 20\u201322). 1\/4 inch NTSC Format Hyper-D Range IL-CCD. Proceedings of the 1995 IEEE Workshop on CCDs and Advanced Image Sensors, Dana Point, CA, USA."},{"key":"ref_10","unstructured":"Takayanagi, I., Fukunaga, Y., Yoshida, T., and Nakamura, J. (2001, January 7\u20139). A Four-Transistor Capacitive Feedback Reset Active Pixel and Its Reset Noise Reduction Capability. Proceedings of the International Image Sensor Workshop, Lake Tahoe, NV, USA."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"1721","DOI":"10.1109\/16.628828","article-title":"Wide intrascene dynamic range CMOS APS using dual sampling","volume":"44","author":"Fossum","year":"1997","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"2787","DOI":"10.1109\/JSSC.2005.858477","article-title":"A wide dynamic range CMOS image sensor with multiple exposure-time signal outputs and 12-bit column-parallel cyclic A\/D converters","volume":"40","author":"Mase","year":"2005","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_13","doi-asserted-by":"crossref","unstructured":"Takayanagi, I., Yoshimura, N., Mori, K., Matsuo, S., Tanaka, S., Abe, H., Yasuda, N., Ishikawa, K., Okura, S., and Ohsawa, S. (2018). An Over 90 dB Intra-Scene Single-Exposure Dynamic Range CMOS Image Sensor Using a 3.0 \u03bcm Triple-Gain Pixel Fabricated in a Standard BSI Process. Sensors, 18.","DOI":"10.3390\/s18010203"},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"234","DOI":"10.3169\/mta.10.234","article-title":"4.0 \u03bcm Stacked Voltage Mode Global Shutter Pixels with Single Exposure High Dynamic Range and Phase Detection Auto Focus Capability","volume":"10","author":"Miyauchi","year":"2022","journal-title":"ITE Trans. Media Technol. Appl."},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"2951","DOI":"10.1109\/TED.2022.3165517","article-title":"Automotive 3 \u03bcm HDR Image Sensor with LFM and Distance Functionality","volume":"69","author":"Velichko","year":"2022","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_16","doi-asserted-by":"crossref","unstructured":"Takayanagi, I., Miyauchi, K., Okura, S., Mori, K., Nakamura, J., and Sugawa, S. (2019). A 120-ke- Full-Well Capacity 160 \u03bcV\/e- Conversion Gain 2.8 \u03bcm Backside-Illuminated Pixel with a Lateral Overflow Integration Capacitor. Sensors, 19.","DOI":"10.3390\/s19245572"},{"key":"ref_17","doi-asserted-by":"crossref","unstructured":"Sugawa, S., Akahane, N., Adachi, S., Mori, K., Ishiuchi, T., and Mizobuchi, K. (2005, January 10). A 100 dB dynamic range CMOS image sensor using a lateral overflow integration capacitor. Proceedings of the ISSCC, 2005 IEEE International Digest of Technical Papers, Solid-State Circuits Conference, San Francisco, CA, USA.","DOI":"10.1109\/JSSC.2006.870753"},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"851","DOI":"10.1109\/JSSC.2006.870753","article-title":"A sensitivity and linearity improvement of a 100-dB dynamic range CMOS image sensor using a lateral overflow integration capacitor","volume":"41","author":"Akahane","year":"2006","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"04DE03","DOI":"10.1143\/JJAP.49.04DE03","article-title":"Pixel scaling in complementary metal oxide silicon image sensor with lateral overflow integration capacitor","volume":"49","author":"Sakai","year":"2010","journal-title":"Jpn. J. Appl. Phys."},{"key":"ref_20","doi-asserted-by":"crossref","unstructured":"Sugo, H., Wakashima, S., Kuroda, R., Yamashita, Y., Sumi, H., Wang, T.J., Chou, P.S., Hsu, M.C., and Sugawa, S. (2016, January 15\u201317). A dead-time free global shutter CMOS image sensor with in-pixel LOFIC and ADC using pixel-wis e connections. Proceedings of the 2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits), Honolulu, HI, USA.","DOI":"10.1109\/VLSIC.2016.7573544"},{"key":"ref_21","doi-asserted-by":"crossref","unstructured":"Sakano, Y., Sakai, S., Tashiro, Y., Kato, Y., Akiyama, K., Honda, K., Sato, M., Sakakibara, M., Taura, T., and Azami, K. (2017, January 5\u20138). 224-ke saturation signal global shutter CMOS image sensor with in-pixel pinned storage and lateral overflow integration capacitor. Proceedings of the 2017 Symposium on VLSI Circuits, Kyoto, Japan.","DOI":"10.23919\/VLSIC.2017.8008498"},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"152","DOI":"10.1109\/TED.2020.3038621","article-title":"An Over 120 dB Single Exposure Wide Dynamic Range CMOS Image Sensor With Two-Stage Lateral Overflow Integration Capacitor","volume":"68","author":"Fujihara","year":"2021","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"2056","DOI":"10.1109\/TED.2021.3062576","article-title":"A Global Shutter Wide Dynamic Range Soft X-ray CMOS Image Sensor With Backside- Illuminated Pinned Photodiode, Two-Stage Lateral Overflow Integration Capacitor, and Voltage Domain Memory Bank","volume":"68","author":"Shike","year":"2021","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"2960","DOI":"10.1109\/JSSC.2007.908719","article-title":"A 1\/2.7-in 2.96 MPixel CMOS Image Sensor with Double CDS Architecture for Full High-Definition Camcorders","volume":"42","author":"Takahashi","year":"2007","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_25","doi-asserted-by":"crossref","unstructured":"Tsai, T.H., Sun, T.W., Cheng, R.W., and Chang, C.C. (2023). A Low-Power Sensing System of VEGF Concentration with Noise Reduction Using Sub-Sampling Technique for Cancer Diagnosis. IEEE Sens. J.","DOI":"10.1109\/JSEN.2023.3263869"},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"239","DOI":"10.1109\/TED.2002.806962","article-title":"Excess noise and other important characteristics of low light level imaging using charge multiplying CCDs","volume":"50","author":"Hynecek","year":"2003","journal-title":"IEEE Trans. Electron Devices"}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/23\/9\/4478\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,10]],"date-time":"2025-10-10T19:29:13Z","timestamp":1760124553000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/23\/9\/4478"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,5,4]]},"references-count":26,"journal-issue":{"issue":"9","published-online":{"date-parts":[[2023,5]]}},"alternative-id":["s23094478"],"URL":"https:\/\/doi.org\/10.3390\/s23094478","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2023,5,4]]}}}