{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T02:10:45Z","timestamp":1760148645237,"version":"build-2065373602"},"reference-count":36,"publisher":"MDPI AG","issue":"10","license":[{"start":{"date-parts":[[2023,5,17]],"date-time":"2023-05-17T00:00:00Z","timestamp":1684281600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"KRIT and HANWHA SYSTEMS","award":["C210042"],"award-info":[{"award-number":["C210042"]}]},{"name":"HANWHA SYSTEMS","award":["C210042"],"award-info":[{"award-number":["C210042"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>This paper describes Monolithic Microwave Integrated Circuits (MMICs) for an X-band radar transceiver front-end implemented in 0.25 \u03bcm GaN High Electron Mobility Transistor (HEMT) technology. Two versions of single pole double throw (SPDT) T\/R switches are introduced to realize a fully GaN-based transmit\/receive module (TRM), each of which achieves an insertion loss of 1.21 dB and 0.66 dB at 9 GHz, IP1dB higher than 46.3 dBm and 44.7 dBm, respectively. Therefore, it can substitute a lossy circulator and limiter used for a conventional GaAs receiver. A driving amplifier (DA), a high-power amplifier (HPA), and a robust low-noise amplifier (LNA) are also designed and verified for a low-cost X-band transmit-receive module (TRM). For the transmitting path, the implemented DA achieves a saturated output power (Psat) of 38.0 dBm and output 1-dB compression (OP1dB) of 25.84 dBm. The HPA reaches a Psat of 43.0 dBm and power-added efficiency (PAE) of 35.6%. For the receiving path, the fabricated LNA measures a small-signal gain of 34.9 dB and a noise figure of 2.56 dB, and it can endure higher than 38 dBm input power in the measurement. The presented GaN MMICs can be useful in implementing a cost-effective TRM for Active Electronically Scanned Array (AESA) radar systems at X-band.<\/jats:p>","DOI":"10.3390\/s23104840","type":"journal-article","created":{"date-parts":[[2023,5,18]],"date-time":"2023-05-18T07:35:50Z","timestamp":1684395350000},"page":"4840","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":8,"title":["X-band MMICs for a Low-Cost Radar Transmit\/Receive Module in 250 nm GaN HEMT Technology"],"prefix":"10.3390","volume":"23","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-7884-5391","authenticated-orcid":false,"given":"Hyeonseok","family":"Lee","sequence":"first","affiliation":[{"name":"Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hyeong-Geun","family":"Park","sequence":"additional","affiliation":[{"name":"Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Van-Du","family":"Le","sequence":"additional","affiliation":[{"name":"Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Van-Phu","family":"Nguyen","sequence":"additional","affiliation":[{"name":"Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jeong-Moon","family":"Song","sequence":"additional","affiliation":[{"name":"Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Bok-Hyung","family":"Lee","sequence":"additional","affiliation":[{"name":"Yongin Research Institute, Hanwha Systems, Yongin-si 17121, Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4733-2160","authenticated-orcid":false,"given":"Jung-Dong","family":"Park","sequence":"additional","affiliation":[{"name":"Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2023,5,17]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"5696","DOI":"10.1109\/TMTT.2018.2861716","article-title":"S-Band GaN Single-Chip Front End for Active Electronically Scanned Array with 40-W Output Power and 1.75-dB Noise Figure","volume":"66","author":"Rocco","year":"2018","journal-title":"IEEE Trans. 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