{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,27]],"date-time":"2026-01-27T21:13:00Z","timestamp":1769548380254,"version":"3.49.0"},"reference-count":59,"publisher":"MDPI AG","issue":"10","license":[{"start":{"date-parts":[[2023,5,22]],"date-time":"2023-05-22T00:00:00Z","timestamp":1684713600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"National Science and Technology Council of Taiwan","award":["NSTC 111-2221-E-018-010"],"award-info":[{"award-number":["NSTC 111-2221-E-018-010"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>The SnS\/SnS2 heterostructure was fabricated by the chemical vapor deposition method. The crystal structure properties of SnS2 and SnS were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and field emission scanning electron microscopy (FESEM). The frequency dependence photoconductivity explores its carrier kinetic decay process. The SnS\/SnS2 heterostructure shows that the ratio of short time constant decay process reaches 0.729 with a time constant of 4.3 \u00d7 10\u22124 s. The power-dependent photoresponsivity investigates the mechanism of electron\u2013hole pair recombination. The results indicate that the photoresponsivity of the SnS\/SnS2 heterostructure has been increased to 7.31 \u00d7 10\u22123 A\/W, representing a significant enhancement of approximately 7 times that of the individual films. The results show the optical response speed has been improved by using the SnS\/SnS2 heterostructure. These results indicate an application potential of the layered SnS\/SnS2 heterostructure for photodetection. This research provides valuable insights into the preparation of the heterostructure composed of SnS and SnS2, and presents an approach for designing high-performance photodetection devices.<\/jats:p>","DOI":"10.3390\/s23104976","type":"journal-article","created":{"date-parts":[[2023,5,23]],"date-time":"2023-05-23T02:02:27Z","timestamp":1684807347000},"page":"4976","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":13,"title":["Enhanced Optical Response of SnS\/SnS2 Layered Heterostructure"],"prefix":"10.3390","volume":"23","author":[{"given":"Der-Yuh","family":"Lin","sequence":"first","affiliation":[{"name":"Department of Electronic Engineering, National Changhua University of Education, No. 2, Shi-Da Rd., Changhua 500, Taiwan"}]},{"given":"Hung-Pin","family":"Hsu","sequence":"additional","affiliation":[{"name":"Department of Electronic Engineering, Ming Chi University of Technology, No. 84, Gongzhuan Rd., Taishan Dist., New Taipei City 243, Taiwan"}]},{"given":"Kuang-Hsin","family":"Liu","sequence":"additional","affiliation":[{"name":"Department of Electronic Engineering, National Changhua University of Education, No. 2, Shi-Da Rd., Changhua 500, Taiwan"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6541-5379","authenticated-orcid":false,"given":"Po-Hung","family":"Wu","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering, National Dong Hwa University, No. 1, Sec. 2, Da Hsueh Rd., Shoufeng, Hualien 974, Taiwan"}]},{"given":"Yu-Tai","family":"Shih","sequence":"additional","affiliation":[{"name":"Department of Physics, National Changhua University of Education, No. 1, Jin-De Rd., Changhua 500, Taiwan"}]},{"given":"Ya-Fen","family":"Wu","sequence":"additional","affiliation":[{"name":"Department of Electronic Engineering, Ming Chi University of Technology, No. 84, Gongzhuan Rd., Taishan Dist., New Taipei City 243, Taiwan"}]},{"given":"Yi-Ping","family":"Wang","sequence":"additional","affiliation":[{"name":"Department of Electronic Engineering, Ming Chi University of Technology, No. 84, Gongzhuan Rd., Taishan Dist., New Taipei City 243, Taiwan"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1743-4337","authenticated-orcid":false,"given":"Chia-Feng","family":"Lin","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering, National Chung Hsing University, No. 145, Xingda Rd., South Dist., Taichung 402, Taiwan"}]}],"member":"1968","published-online":{"date-parts":[[2023,5,22]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"2008126","DOI":"10.1002\/adma.202008126","article-title":"Photodetectors of 2D materials from ultraviolet to terahertz waves","volume":"33","author":"Qiu","year":"2021","journal-title":"Adv. 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