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attracting burgeoning interest in the terahertz (THz) field. Especially, developing field-effect transistor (FET)-based THz detectors with preferred nonlinear plasma-wave mechanisms in terms of high sensitivity, compactness and low cost is a high priority for advancing performance imaging or communication systems in daily life. However, as THz detectors continue to shrink in size, the impact of the hot-electron effect on device performance is impossible to ignore, and the physical process of THz conversion remains elusive. To reveal the underlying microscopic mechanisms, we have implemented drift-diffusion\/hydrodynamic models via a self-consistent finite-element solution to understand the dynamics of carriers at the channel and the device structure dependence. By considering the hot-electron effect and doping dependence in our model, the competitive behavior between the nonlinear rectification and hot electron-induced photothermoelectric effect is clearly presented, and it is found that the optimized source doping concentrations can be utilized to reduce the hot-electron effect on the devices. Our results not only provide guidance for further device optimization but can also be extended to other novel electronic systems for studying THz nonlinear rectification.<\/jats:p>","DOI":"10.3390\/s23125367","type":"journal-article","created":{"date-parts":[[2023,6,7]],"date-time":"2023-06-07T02:02:15Z","timestamp":1686103335000},"page":"5367","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":5,"title":["The Microscopic Mechanisms of Nonlinear Rectification on Si-MOSFETs Terahertz Detector"],"prefix":"10.3390","volume":"23","author":[{"given":"Yingdong","family":"Wei","sequence":"first","affiliation":[{"name":"State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China"},{"name":"School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chenyu","family":"Yao","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Li","family":"Han","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China"},{"name":"Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No.1 SubLane Xiangshan, Hangzhou 310024, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Libo","family":"Zhang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China"},{"name":"Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No.1 SubLane Xiangshan, Hangzhou 310024, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhiqingzi","family":"Chen","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Lin","family":"Wang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9859-8394","authenticated-orcid":false,"given":"Wei","family":"Lu","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China"},{"name":"School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China"},{"name":"Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No.1 SubLane Xiangshan, Hangzhou 310024, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaoshuang","family":"Chen","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China"},{"name":"School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China"},{"name":"Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No.1 SubLane Xiangshan, Hangzhou 310024, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2023,6,6]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"910","DOI":"10.1109\/22.989974","article-title":"Terahertz technology","volume":"50","author":"Siegel","year":"2002","journal-title":"IEEE Trans. Microw. Theory Tech."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"145","DOI":"10.1007\/s11276-017-1548-4","article-title":"Terahertz wireless data communication","volume":"25","year":"2019","journal-title":"Wirel. Netw."},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"1315","DOI":"10.1143\/JJAP.47.1315","article-title":"Terahertz images of biological molecules: Frequency dependence of spatial resolution using a tunable terahertz laser source","volume":"47","author":"Ueno","year":"2008","journal-title":"Jpn. J. Appl. Phys."},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"2465","DOI":"10.1103\/PhysRevLett.71.2465","article-title":"Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current","volume":"71","author":"Dyakonov","year":"1993","journal-title":"Phys. Rev. Lett."},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"1137","DOI":"10.1063\/1.114986","article-title":"Two dimensional electronic flute","volume":"67","author":"Dyakonov","year":"1995","journal-title":"Appl. Phys. Lett."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"380","DOI":"10.1109\/16.485650","article-title":"Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid","volume":"43","author":"Dyakonov","year":"1996","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"1640","DOI":"10.1109\/16.536809","article-title":"Plasma wave electronics: Novel terahertz devices using two dimensional electron fluid","volume":"43","author":"Dyakonov","year":"1996","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_8","first-page":"1319","article-title":"Field effect transistors for terahertz detection: Physics and first imaging applications","volume":"30","author":"Knap","year":"2009","journal-title":"J. Infrared Millim. Terahertz Waves"},{"key":"ref_9","doi-asserted-by":"crossref","unstructured":"Fang, T., Liu, Z.-Y., Liu, L.-Y., Li, Y.-Y., Liu, J.-Q., Liu, J., and Wu, N.-J. (2017, January 6\u20138). Detection of 3.0 THz wave with a detector in 65 nm standard CMOS process. Proceedings of the 2017 IEEE Asian Solid-State Circuits Conference (A-SSCC), Seoul, Republic of Korea.","DOI":"10.1109\/ASSCC.2017.8240248"},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"129","DOI":"10.1016\/j.sse.2016.10.030","article-title":"Numerical investigation of plasma effects in silicon MOSFETs for THz-wave detection","volume":"128","author":"Jungemann","year":"2017","journal-title":"Solid-State Electron."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"108","DOI":"10.1109\/TTHZ.2017.2778499","article-title":"Nonlinear analysis of nonresonant THz response of MOSFET and implementation of a high-responsivity cross-coupled THz detector","volume":"8","author":"Khan","year":"2017","journal-title":"IEEE Trans. Terahertz Sci. Technol."},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"082401","DOI":"10.1007\/s11432-015-0976-9","article-title":"Terahertz detector for imaging in 180-nm standard CMOS process","volume":"60","author":"Liu","year":"2017","journal-title":"Sci. China Inf. Sci."},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"353","DOI":"10.1109\/TED.2015.2503987","article-title":"Room temperature direct and heterodyne detection of 0.28\u20130.69-THz waves based on GaN 2-DEG unipolar nanochannels","volume":"63","author":"Daher","year":"2015","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_14","doi-asserted-by":"crossref","unstructured":"Tanigawa, T., Onishi, T., Takigawa, S., and Otsuji, T. (2010, January 21\u201323). Enhanced responsivity in a novel AlGaN\/GaN plasmon-resonant terahertz detector using gate-dipole antenna with parasitic elements. Proceedings of the 68th Device Research Conference, Notre Dame, IN, USA.","DOI":"10.1109\/DRC.2010.5551895"},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"528","DOI":"10.1134\/S106378260904023X","article-title":"Resonance detection of terahertz radiation in submicrometer field-effect GaAs\/AlGaAs transistors with two-dimensional electron gas","volume":"43","author":"Antonov","year":"2009","journal-title":"Semiconductors"},{"key":"ref_16","doi-asserted-by":"crossref","unstructured":"Javadi, E., Shahabadi, M., Masoumi, N., Notario, J.A.D., Meziani, Y.M., and Perez, J.E.V. (2017, January 2\u20134). Terahertz detection and imaging using an uncooled off-the-shelf GaN high electron mobility field-effect transistor. Proceedings of the 2017 Iranian Conference on Electrical Engineering (ICEE), Tehran, Iran.","DOI":"10.1109\/IranianCEE.2017.7985483"},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"034305","DOI":"10.1063\/1.4775406","article-title":"Experimental demonstration of direct terahertz detection at room-temperature in AlGaN\/GaN asymmetric nanochannels","volume":"113","author":"Ducournau","year":"2013","journal-title":"J. Appl. Phys."},{"key":"ref_18","doi-asserted-by":"crossref","unstructured":"Suzuki, D., Oda, S., and Kawano, Y. (2012, January 23\u201328). Gate-voltage tunable terahertz detection by a GaAs\/AlGaAs quantum device. Proceedings of the 2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves, Wollongong, Australia.","DOI":"10.1109\/IRMMW-THz.2012.6380132"},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"122102","DOI":"10.1063\/1.4798329","article-title":"GaAs\/AlGaAs field-effect transistor for tunable terahertz detection and spectroscopy with built-in signal modulation","volume":"102","author":"Suzuki","year":"2013","journal-title":"Appl. Phys. Lett."},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"865","DOI":"10.1038\/nmat3417","article-title":"Graphene field-effect transistors as room-temperature terahertz detectors","volume":"11","author":"Vicarelli","year":"2012","journal-title":"Nat. Mater."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"1604414","DOI":"10.1002\/adfm.201604414","article-title":"Toward sensitive room-temperature broadband detection from infrared to terahertz with antenna-integrated black phosphorus photoconductor","volume":"27","author":"Wang","year":"2017","journal-title":"Adv. Funct. Mater."},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"5834","DOI":"10.1021\/nl5027309","article-title":"Antenna-integrated 0.6 THz FET direct detectors based on CVD graphene","volume":"14","author":"Zak","year":"2014","journal-title":"Nano Lett."},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"5646","DOI":"10.1021\/acs.nanolett.0c00082","article-title":"Ultrabroadband, ultraviolet to terahertz, and high sensitivity CH3NH3PbI3 perovskite photodetectors","volume":"20","author":"Li","year":"2020","journal-title":"Nano Lett."},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"12148","DOI":"10.1039\/D0TC02399J","article-title":"A fast response, self-powered and room temperature near infrared-terahertz photodetector based on a MAPbI 3\/PEDOT: PSS composite","volume":"8","author":"Li","year":"2020","journal-title":"J. Mater. Chem. C"},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"373","DOI":"10.1109\/55.720190","article-title":"Terahertz detector utilizing two-dimensional electronic fluid","volume":"19","author":"Lu","year":"1998","journal-title":"IEEE Electron Device Lett."},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"9346","DOI":"10.1063\/1.1468257","article-title":"Nonresonant detection of terahertz radiation in field effect transistors","volume":"91","author":"Knap","year":"2002","journal-title":"J. Appl. Phys."},{"key":"ref_27","doi-asserted-by":"crossref","first-page":"2587","DOI":"10.1063\/1.1367289","article-title":"Terahertz detection by high-electron-mobility transistor: Enhancement by drain bias","volume":"78","author":"Shur","year":"2001","journal-title":"Appl. Phys. Lett."},{"key":"ref_28","doi-asserted-by":"crossref","first-page":"895","DOI":"10.1021\/acsphotonics.8b01527","article-title":"Ultrabroadband, sensitive, and fast photodetection with needle-like EuBiSe3 single crystal","volume":"6","author":"Wang","year":"2019","journal-title":"ACS Photonics"},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"6411","DOI":"10.1021\/acsami.8b20095","article-title":"Annealing temperature-dependent terahertz thermal-electrical conversion characteristics of three-dimensional microporous graphene","volume":"11","author":"Chen","year":"2019","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_30","doi-asserted-by":"crossref","first-page":"216","DOI":"10.3389\/fphy.2020.00216","article-title":"Localized Electromagnetic Resonance Enabled THz Photothermoelectric Detection in Graphene","volume":"8","author":"Chen","year":"2020","journal-title":"Front. Phys."},{"key":"ref_31","doi-asserted-by":"crossref","first-page":"274","DOI":"10.1016\/j.carbon.2019.07.033","article-title":"Ultra-broadband self-powered reduced graphene oxide photodetectors with annealing temperature-dependent responsivity","volume":"153","author":"Wen","year":"2019","journal-title":"Carbon"},{"key":"ref_32","doi-asserted-by":"crossref","first-page":"1902699","DOI":"10.1002\/advs.201902699","article-title":"Sensitive terahertz detection and imaging driven by the photothermoelectric effect in ultrashort-channel black phosphorus devices","volume":"7","author":"Guo","year":"2020","journal-title":"Adv. Sci."},{"key":"ref_33","doi-asserted-by":"crossref","first-page":"5567","DOI":"10.1002\/adma.201502052","article-title":"Black phosphorus terahertz photodetectors","volume":"27","author":"Viti","year":"2015","journal-title":"Adv. Mater."},{"key":"ref_34","doi-asserted-by":"crossref","first-page":"7390","DOI":"10.1002\/adma.201601736","article-title":"Heterostructured hBN-BP-hBN nanodetectors at terahertz frequencies","volume":"28","author":"Viti","year":"2016","journal-title":"Adv. Mater."},{"key":"ref_35","doi-asserted-by":"crossref","first-page":"647","DOI":"10.1038\/s41586-022-04512-8","article-title":"Observation of a linked-loop quantum state in a topological magnet","volume":"604","author":"Belopolski","year":"2022","journal-title":"Nature"},{"key":"ref_36","doi-asserted-by":"crossref","first-page":"421","DOI":"10.1038\/s41565-020-00839-3","article-title":"Room-temperature nonlinear Hall effect and wireless radiofrequency rectification in Weyl semimetal TaIrTe4","volume":"16","author":"Kumar","year":"2021","journal-title":"Nat. Nanotechnol."},{"key":"ref_37","doi-asserted-by":"crossref","first-page":"337","DOI":"10.1038\/s41586-018-0807-6","article-title":"Observation of the nonlinear Hall effect under time-reversal-symmetric conditions","volume":"565","author":"Ma","year":"2019","journal-title":"Nature"},{"key":"ref_38","doi-asserted-by":"crossref","first-page":"495","DOI":"10.1038\/nature15768","article-title":"Type-ii weyl semimetals","volume":"527","author":"Soluyanov","year":"2015","journal-title":"Nature"},{"key":"ref_39","doi-asserted-by":"crossref","first-page":"257","DOI":"10.1038\/s41467-017-00280-6","article-title":"Lorentz-violating type-II Dirac fermions in transition metal dichalcogenide PtTe2","volume":"8","author":"Yan","year":"2017","journal-title":"Nat. Commun."},{"key":"ref_40","doi-asserted-by":"crossref","first-page":"2451","DOI":"10.1038\/s41467-020-16133-8","article-title":"Non-perturbative terahertz high-harmonic generation in the three-dimensional Dirac semimetal Cd3As2","volume":"11","author":"Kovalev","year":"2020","journal-title":"Nat. Commun."},{"key":"ref_41","doi-asserted-by":"crossref","unstructured":"Javadi, E., But, D.B., Ikamas, K., Zdanevi\u010dius, J., Knap, W., and Lisauskas, A. (2021). Sensitivity of field-effect transistor-based terahertz detectors. Sensors, 21.","DOI":"10.3390\/s21092909"},{"key":"ref_42","doi-asserted-by":"crossref","first-page":"1601","DOI":"10.1038\/s41563-021-00992-7","article-title":"Topology and geometry under the nonlinear electromagnetic spotlight","volume":"20","author":"Ma","year":"2021","journal-title":"Nat. Mater."},{"key":"ref_43","doi-asserted-by":"crossref","first-page":"21","DOI":"10.1038\/nmat5031","article-title":"Ubiquitous formation of bulk Dirac cones and topological surface states from a single orbital manifold in transition-metal dichalcogenides","volume":"17","author":"Bahramy","year":"2018","journal-title":"Nat. Mater."},{"key":"ref_44","doi-asserted-by":"crossref","first-page":"677","DOI":"10.1038\/nphys4091","article-title":"Edge conduction in monolayer WTe2","volume":"13","author":"Fei","year":"2017","journal-title":"Nat. Phys."},{"key":"ref_45","doi-asserted-by":"crossref","first-page":"5736","DOI":"10.1038\/s41467-019-13713-1","article-title":"Robust edge photocurrent response on layered type II Weyl semimetal WTe2","volume":"10","author":"Wang","year":"2019","journal-title":"Nat. Commun."},{"key":"ref_46","doi-asserted-by":"crossref","first-page":"1042","DOI":"10.1109\/T-ED.1976.18533","article-title":"Finite-element simulation of GaAs MESFET\u2019s with lateral doping profiles and submicron gates","volume":"23","author":"Barnes","year":"1976","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_47","doi-asserted-by":"crossref","first-page":"218","DOI":"10.1147\/rd.254.0218","article-title":"Finite-element analysis of semiconductor devices: The FIELDAY program","volume":"25","author":"Buturla","year":"1981","journal-title":"IBM J. Res. Dev."},{"key":"ref_48","doi-asserted-by":"crossref","first-page":"259","DOI":"10.1109\/5.915374","article-title":"Device scaling limits of Si MOSFETs and their application dependencies","volume":"89","author":"Frank","year":"2001","journal-title":"Proc. IEEE"},{"key":"ref_49","doi-asserted-by":"crossref","first-page":"682","DOI":"10.1147\/rd.236.0682","article-title":"Geometry effects of small MOSFET devices","volume":"23","author":"Gaensslen","year":"1979","journal-title":"IBM J. Res. Dev."},{"key":"ref_50","unstructured":"Wachutka, G. (1989, January 11\u201314). An Extended Thermodynamic Model for the Simultaneous Simulation of the Thermal and Electrical Behaviour of Semiconductor Devices. Proceedings of the Sixth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits (NASECODE VI), Dublin, Ireland."},{"key":"ref_51","doi-asserted-by":"crossref","first-page":"2002","DOI":"10.1103\/PhysRev.126.2002","article-title":"Diffusion of hot and cold electrons in semiconductor barriers","volume":"126","author":"Stratton","year":"1962","journal-title":"Phys. Rev."},{"key":"ref_52","doi-asserted-by":"crossref","first-page":"890","DOI":"10.1109\/16.381985","article-title":"Numerical simulation of submicrometer devices including coupled nonlocal transport and nonisothermal effects","volume":"42","author":"Apanovich","year":"1995","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_53","doi-asserted-by":"crossref","first-page":"2052","DOI":"10.1109\/T-ED.1985.22238","article-title":"Current lines and accurate contact current evaluation in 2-D numerical simulation of semiconductor devices","volume":"32","author":"Palm","year":"1985","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_54","unstructured":"Nguyen, T.N. (1984). Small-Geometry MOS Transistors: Physics and Modeling of Surface-and Buried-Channel MOSFETs, Stanford University."},{"key":"ref_55","unstructured":"Taur, Y., and Ning, T.H. (1998). Fundamentals of Modern VLSI Devices, Cambridge University Press."},{"key":"ref_56","doi-asserted-by":"crossref","first-page":"114511","DOI":"10.1063\/1.3140611","article-title":"Rational design of high-responsivity detectors of terahertz radiation based on distributed self-mixing in silicon field-effect transistors","volume":"105","author":"Lisauskas","year":"2009","journal-title":"J. Appl. Phys."},{"key":"ref_57","doi-asserted-by":"crossref","first-page":"79","DOI":"10.1007\/s00211-011-0403-2","article-title":"The maximum angle condition is not necessary for convergence of the finite element method","volume":"120","author":"Hannukainen","year":"2012","journal-title":"Numer. Math."},{"key":"ref_58","doi-asserted-by":"crossref","first-page":"1386","DOI":"10.1016\/j.compstruc.2004.12.002","article-title":"Coupling and enrichment schemes for finite element and finite sphere discretizations","volume":"83","author":"Hong","year":"2005","journal-title":"Comput. Struct."},{"key":"ref_59","doi-asserted-by":"crossref","first-page":"167","DOI":"10.1007\/s10444-007-9030-y","article-title":"Counterexamples to the asymptotic expansion of interpolation in finite elements","volume":"27","author":"Lin","year":"2007","journal-title":"Adv. Comput. Math."},{"key":"ref_60","doi-asserted-by":"crossref","first-page":"221107","DOI":"10.1063\/1.2743930","article-title":"Luminescence and absorption analysis of undoped organic materials","volume":"90","author":"Odermatt","year":"2007","journal-title":"Appl. Phys. Lett."},{"key":"ref_61","doi-asserted-by":"crossref","first-page":"723","DOI":"10.1109\/JSTQE.2003.818852","article-title":"Simulating electronic and optical processes in multilayer organic light-emitting devices","volume":"9","author":"Ruhstaller","year":"2003","journal-title":"IEEE J. Sel. Top. Quantum Electron."},{"key":"ref_62","doi-asserted-by":"crossref","first-page":"4575","DOI":"10.1063\/1.1352027","article-title":"Transient and steady-state behavior of space charges in multilayer organic light-emitting diodes","volume":"89","author":"Ruhstaller","year":"2001","journal-title":"J. Appl. Phys."},{"key":"ref_63","doi-asserted-by":"crossref","first-page":"430","DOI":"10.1063\/1.1327286","article-title":"Numerical model for organic light-emitting diodes","volume":"89","author":"Bussac","year":"2001","journal-title":"J. Appl. Phys."},{"key":"ref_64","doi-asserted-by":"crossref","first-page":"9825","DOI":"10.1088\/0953-8984\/14\/42\/303","article-title":"Electrical transport modelling in organic electroluminescent devices","volume":"14","author":"Walker","year":"2002","journal-title":"J. Phys. Condens. Matter"},{"key":"ref_65","unstructured":"Varga, R.S. (1962). Matrix Iterative Analysis, Prentice Hall."},{"key":"ref_66","doi-asserted-by":"crossref","first-page":"416","DOI":"10.1137\/0904032","article-title":"Numerical methods for semiconductor device simulation","volume":"4","author":"Bank","year":"1983","journal-title":"SIAM J. Sci. Stat. Comput."},{"key":"ref_67","doi-asserted-by":"crossref","first-page":"883","DOI":"10.1145\/355483.355487","article-title":"Sliver exudation","volume":"47","author":"Cheng","year":"2000","journal-title":"J. ACM"},{"key":"ref_68","doi-asserted-by":"crossref","first-page":"133","DOI":"10.1017\/S0962492900001331","article-title":"Triangulations and meshes in computational geometry","volume":"9","author":"Edelsbrunner","year":"2000","journal-title":"Acta Numer."},{"key":"ref_69","doi-asserted-by":"crossref","first-page":"229","DOI":"10.1007\/s003660200020","article-title":"An experimental study of sliver exudation","volume":"18","author":"Edelsbrunner","year":"2002","journal-title":"Eng. Comput."},{"key":"ref_70","doi-asserted-by":"crossref","first-page":"330","DOI":"10.1063\/1.1486253","article-title":"Subthreshold characteristics of field effect transistors based on poly (3-dodecylthiophene) and an organic insulator","volume":"92","author":"Scheinert","year":"2002","journal-title":"J. Appl. Phys."},{"key":"ref_71","doi-asserted-by":"crossref","first-page":"545","DOI":"10.1109\/TTHZ.2013.2262799","article-title":"Modeling terahertz plasmonic Si FETs with SPICE","volume":"3","author":"Gutin","year":"2013","journal-title":"IEEE Trans. Terahertz Sci. Technol."},{"key":"ref_72","doi-asserted-by":"crossref","first-page":"1742","DOI":"10.1109\/TED.2016.2526677","article-title":"High-performance plasmonic THz detector based on asymmetric FET with vertically integrated antenna in CMOS technology","volume":"63","author":"Ryu","year":"2016","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_73","doi-asserted-by":"crossref","first-page":"346","DOI":"10.1002\/pssc.201000569","article-title":"Device loading effect on nonresonant detection of terahertz radiation in dual grating gate plasmon-resonant structure using InGaP\/InGaAs\/GaAs material systems","volume":"8","author":"Suemitsu","year":"2011","journal-title":"Phys. Status Solidi C"},{"key":"ref_74","doi-asserted-by":"crossref","first-page":"1262","DOI":"10.1149\/1.2133542","article-title":"The loading effect in plasma etching","volume":"124","author":"Mogab","year":"1977","journal-title":"J. Electrochem. Soc."},{"key":"ref_75","doi-asserted-by":"crossref","first-page":"1055","DOI":"10.1016\/0038-1101(80)90185-9","article-title":"Distributed series resistance in photovoltaic devices; intensity and loading effects","volume":"23","author":"Smirnov","year":"1980","journal-title":"Solid-State Electron."},{"key":"ref_76","doi-asserted-by":"crossref","first-page":"214002","DOI":"10.1088\/0957-4484\/24\/21\/214002","article-title":"Nanometer size field effect transistors for terahertz detectors","volume":"24","author":"Knap","year":"2013","journal-title":"Nanotechnology"},{"key":"ref_77","doi-asserted-by":"crossref","first-page":"422","DOI":"10.1049\/el:20073475","article-title":"Device loading effects on nonresonant detection of terahertz radiation by silicon MOSFETs","volume":"43","author":"Stillman","year":"2007","journal-title":"Electron. Lett."},{"key":"ref_78","doi-asserted-by":"crossref","first-page":"96","DOI":"10.1021\/nl2030486","article-title":"Room-temperature terahertz detectors based on semiconductor nanowire field-effect transistors","volume":"12","author":"Vitiello","year":"2012","journal-title":"Nano Lett."},{"key":"ref_79","doi-asserted-by":"crossref","first-page":"4688","DOI":"10.1021\/nl202318u","article-title":"Hot carrier transport and photocurrent response in graphene","volume":"11","author":"Song","year":"2011","journal-title":"Nano Lett."},{"key":"ref_80","doi-asserted-by":"crossref","first-page":"5895","DOI":"10.1364\/OE.22.005895","article-title":"Photocurrent response of carbon nanotube-metal heterojunctions in the terahertz range","volume":"22","author":"Wang","year":"2014","journal-title":"Opt. Express"},{"key":"ref_81","doi-asserted-by":"crossref","first-page":"13348","DOI":"10.1364\/OE.23.013348","article-title":"Terahertz photodetector based on double-walled carbon nanotube microbundle-metal contacts","volume":"23","author":"Wang","year":"2015","journal-title":"Opt. Express"},{"key":"ref_82","doi-asserted-by":"crossref","first-page":"1902044","DOI":"10.1002\/adma.201902044","article-title":"Progress of photodetectors based on the photothermoelectric effect","volume":"31","author":"Lu","year":"2019","journal-title":"Adv. Mater."},{"key":"ref_83","doi-asserted-by":"crossref","first-page":"1335","DOI":"10.1038\/srep01335","article-title":"Broadband, polarization-sensitive photodetector based on optically-thick films of macroscopically long, dense and aligned carbon nanotubes","volume":"3","author":"Nanot","year":"2013","journal-title":"Sci. Rep."},{"key":"ref_84","doi-asserted-by":"crossref","first-page":"024502","DOI":"10.1063\/1.3676211","article-title":"An improved model for non-resonant terahertz detection in field-effect transistors","volume":"111","author":"Preu","year":"2012","journal-title":"J. Appl. Phys."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/23\/12\/5367\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,10]],"date-time":"2025-10-10T19:49:06Z","timestamp":1760125746000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/23\/12\/5367"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,6,6]]},"references-count":84,"journal-issue":{"issue":"12","published-online":{"date-parts":[[2023,6]]}},"alternative-id":["s23125367"],"URL":"https:\/\/doi.org\/10.3390\/s23125367","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2023,6,6]]}}}