{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,20]],"date-time":"2025-11-20T18:59:56Z","timestamp":1763665196356,"version":"build-2065373602"},"reference-count":12,"publisher":"MDPI AG","issue":"13","license":[{"start":{"date-parts":[[2023,6,22]],"date-time":"2023-06-22T00:00:00Z","timestamp":1687392000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100002536","name":"Mokpo National University","doi-asserted-by":"publisher","award":["2022-0382"],"award-info":[{"award-number":["2022-0382"]}],"id":[{"id":"10.13039\/501100002536","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>This paper presents a low-noise amplifier (LNA) with an integrated input and output matching network designed using RF-SOI technology. This LNA was designed with a resistive feedback topology and an inductive peaking technology to provide 600 MHz of bandwidth in the N79 band (4.4 GHz to 5.0 GHz). Generally, the resistive feedback structure used in broadband applications allows the input and output impedance to be made to satisfy the broadband conditions through low-impedance feedback. However, feedback impedance for excessive broadband characteristics can degrade the noise performance as a consequence. To achieve a better noise performance for a bandwidth of 600 MHz, the paper provided an optimized noise performance by selecting the feedback resistor value optimized for the N79 band. Additionally, an inductive peaking technique was applied to the designed low-noise amplifier to achieve a better optimized output matching network. The designed low-noise amplifier simulated a gain of 20.68 dB and 19.94 dB from 4.4 to 5.0 GHz, with noise figures of 1.57 dB and 1.73 dB, respectively. The input and output matching networks were also integrated, and the power consumption was designed to be 9.95 mA at a supply voltage of 1.2 V.<\/jats:p>","DOI":"10.3390\/s23135808","type":"journal-article","created":{"date-parts":[[2023,6,23]],"date-time":"2023-06-23T02:34:07Z","timestamp":1687487647000},"page":"5808","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":5,"title":["RF-SOI Low-Noise Amplifier Using RC Feedback and Series Inductive-Peaking Techniques for 5G New Radio Application"],"prefix":"10.3390","volume":"23","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-7566-5408","authenticated-orcid":false,"given":"Min-Su","family":"Kim","sequence":"first","affiliation":[{"name":"Department of Information and Electronic Engineering, Mokpo National University, Muan 58554, Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Sang-Sun","family":"Yoo","sequence":"additional","affiliation":[{"name":"Department of Smart Automobile, Pyeongtaek University, Pyeongtaek-si 450-701, Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2023,6,22]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Balteanu, F., Modi, H., Choi, Y., Lee, J., Drogi, S., and Khesbak, S. (2019, January 1\u20133). 5G RF front end module architectures for mobile applications. Proceedings of the 2019 49th European Microwave Conference (EuMC), Paris, France.","DOI":"10.23919\/EuMC.2019.8910723"},{"key":"ref_2","doi-asserted-by":"crossref","unstructured":"Li, C., Wang, M., Chi, T., Kumar, A., Boenke, M., Wang, D., Cahoon, N., Bandyopadhyay, A., Joseph, A., and Wang, H. (2017, January 25\u201328). 5G mm-wave front-end-module design with advanced SOI process. Proceedings of the IEEE 12th International Conference on ASIC (ASICON), Guiyang, China.","DOI":"10.1109\/ASICON.2017.8252651"},{"key":"ref_3","doi-asserted-by":"crossref","unstructured":"Dai, R., Ren, J., He, J., Xiao, J., and Kong, W. (2019, January 18\u201319). RFFE integration design for 5g in 0.13 um RFSOI technology. Proceedings of the 2019 China Semiconductor Technology International Conference (CSTIC), Shanghai, China.","DOI":"10.1109\/CSTIC.2019.8755726"},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"1218","DOI":"10.1109\/TMTT.2008.920181","article-title":"Resistive-Feedback CMOS Low-Noise Amplifiers for Multiband Applications","volume":"56","author":"Perumana","year":"2008","journal-title":"IEEE Trans. Microw. Theory Tech."},{"key":"ref_5","doi-asserted-by":"crossref","unstructured":"Xiong, Y., Zeng, X., Wang, G., and Liu, C. (2019, January 18\u201320). A Compact 4~8 GHz Low Noise Amplifier MMIC with Standing-By Feature for 5G Communication Applications. Proceedings of the 2019 3rd International Conference on Electronic Information Technology and Computer Engineering (EITCE), Xiamen, China.","DOI":"10.1109\/EITCE47263.2019.9095006"},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"3019","DOI":"10.1109\/JSSC.2009.2031912","article-title":"A 2.4-GHz Resistive Feedback LNA in 0.13 \u03bcm CMOS","volume":"44","author":"Joo","year":"2009","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_7","doi-asserted-by":"crossref","unstructured":"Wu, J., and Liu, Z. (2019, January 21\u201322). A 40 nm CMOS UltraWideband Low Noise Amplifier Design, Advances in Computer Science Research. Proceedings of the International Conference on Wireless Communication, Network and Multimedia Engineering (WCNME 2019), Guilin, China.","DOI":"10.2991\/wcnme-19.2019.9"},{"key":"ref_8","unstructured":"Razavi, B. (2011). RF Microelectronics (2nd Edition) (Prentice Hall Communications Engineering and Emerging Technologies Series), Prentice Hall Press. [2nd ed.]."},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"731","DOI":"10.1109\/ICETET.2010.21","article-title":"Fully concurrent dual-band LNA operating in 900 MHz\/2.4 GHz bands for multi-standard wireless receiver with sub-2 dB noise figure","volume":"1","author":"Datta","year":"2010","journal-title":"Int. Emerg. Trends Eng. Conf. Tech. Dig."},{"key":"ref_10","unstructured":"Lee, H.-J., Ha, D.S., and Choi, S.S. (2006, January 6\u20139). A 3\u20135 GHz CMOS UWB LNA with input matching using miller effect. Proceedings of the IEEE International Solid-State Circuits Conference, San Francisco, CA, USA."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"1341","DOI":"10.1109\/JSSC.2008.922736","article-title":"Wideband Balun-LNA with Simultaneous Output Balancing, Noise-Canceling and Distortion-Canceling","volume":"43","author":"Blaakmeer","year":"2008","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"200","DOI":"10.1109\/LMWC.2012.2187882","article-title":"A 5 GHz 0.95 dB NF Highly Linear Cascode Floating-Body LNA in 180 nm SOI CMOS Technology","volume":"22","author":"Madan","year":"2012","journal-title":"IEEE Microw. Wirel. Compon. Lett."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/23\/13\/5808\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,10]],"date-time":"2025-10-10T19:58:25Z","timestamp":1760126305000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/23\/13\/5808"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,6,22]]},"references-count":12,"journal-issue":{"issue":"13","published-online":{"date-parts":[[2023,7]]}},"alternative-id":["s23135808"],"URL":"https:\/\/doi.org\/10.3390\/s23135808","relation":{},"ISSN":["1424-8220"],"issn-type":[{"type":"electronic","value":"1424-8220"}],"subject":[],"published":{"date-parts":[[2023,6,22]]}}}