{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T02:18:06Z","timestamp":1760149086637,"version":"build-2065373602"},"reference-count":18,"publisher":"MDPI AG","issue":"13","license":[{"start":{"date-parts":[[2023,7,5]],"date-time":"2023-07-05T00:00:00Z","timestamp":1688515200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"Laboratory Open Fund of Beijing Smart-Chip Microelectronics Technology Co., Ltd.","award":["SGITZX00XSJS2108708"],"award-info":[{"award-number":["SGITZX00XSJS2108708"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>This article presents a miniature ultrawideband active magnetic probe which is composed of a passive structure and an active amplification circuit structure. The active circuit mainly contains two chips, specifically an amplification chip (HMC797APM5E) and a power management chip (HMC980LP4E). The maximum size of the probe is no more than 64 \u00d7 41.5 mm2. Compared with the passive probe with the same-sized loop, the sensitivity of the proposed probe is enhanced by 25 dB through the active circuit design. The working frequency bandwidth of the proposed probe can cover 9 kHz to 18 GHz. Additionally, the flatness is about \u00b14 dB in terms of |S21| in the stable working bandwidth. It is efficient for high-frequency near-field scanning.<\/jats:p>","DOI":"10.3390\/s23136170","type":"journal-article","created":{"date-parts":[[2023,7,6]],"date-time":"2023-07-06T00:54:41Z","timestamp":1688604881000},"page":"6170","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Design of Miniature Ultrawideband Active Magnetic Field Probe Using Integrated Design Idea"],"prefix":"10.3390","volume":"23","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-5172-3290","authenticated-orcid":false,"given":"Yang","family":"Zhou","sequence":"first","affiliation":[{"name":"School of Electronic and Information Engineering, Beihang University, Beijing 100191, China"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0994-7578","authenticated-orcid":false,"given":"Zhaowen","family":"Yan","sequence":"additional","affiliation":[{"name":"School of Electronic and Information Engineering, Beihang University, Beijing 100191, China"}]},{"given":"Zhangqiang","family":"Ma","sequence":"additional","affiliation":[{"name":"School of Electronic and Information Engineering, Beihang University, Beijing 100191, China"}]},{"given":"Yang","family":"Zhao","sequence":"additional","affiliation":[{"name":"Beijing Engineering Research Center of High-Reliability IC with Power Industrial Grade, Beijing Smart-Chip Microelectronics Technology Co., Ltd., Beijing 102299, China"}]},{"given":"Jie","family":"Gao","sequence":"additional","affiliation":[{"name":"Beijing Engineering Research Center of High-Reliability IC with Power Industrial Grade, Beijing Smart-Chip Microelectronics Technology Co., Ltd., Beijing 102299, China"}]},{"given":"Ruiqi","family":"Cheng","sequence":"additional","affiliation":[{"name":"Beijing Engineering Research Center of High-Reliability IC with Power Industrial Grade, Beijing Smart-Chip Microelectronics Technology Co., Ltd., Beijing 102299, China"}]},{"given":"Baocheng","family":"Huang","sequence":"additional","affiliation":[{"name":"Beijing Engineering Research Center of High-Reliability IC with Power Industrial Grade, Beijing Smart-Chip Microelectronics Technology Co., Ltd., Beijing 102299, China"}]}],"member":"1968","published-online":{"date-parts":[[2023,7,5]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Kobayashi, R., Kobayashi, T., Miyazaki, C., Oka, N., and Oh-hashi, H. 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