{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,17]],"date-time":"2026-02-17T21:11:40Z","timestamp":1771362700216,"version":"3.50.1"},"reference-count":48,"publisher":"MDPI AG","issue":"13","license":[{"start":{"date-parts":[[2023,7,6]],"date-time":"2023-07-06T00:00:00Z","timestamp":1688601600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62075044"],"award-info":[{"award-number":["62075044"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>We present a straightforward approach to develop a high-detectivity silicon (Si) sub-bandgap near-infrared (NIR) photodetector (PD) based on textured Si\/Au nanoparticle (NP) Schottky junctions coated with graphene film. This is a photovoltaic-type PD that operates at 0 V bias. The texturing of Si is to trap light for NIR absorption enhancement, and Schottky junctions facilitate sub-bandgap NIR absorption and internal photoemission. Both Au NPs and the texturing of Si were made in self-organized processes. Graphene offers additional pathways for hot electron transport and to increase photocurrent. Under 1319 nm illumination at room temperature, a responsivity of 3.9 mA\/W and detectivity of 7.2 \u00d7 1010 cm \u00d7 (Hz)1\/2\/W were obtained. Additionally, at \u221260 \u00b0C, the detectivity increased to 1.5 \u00d7 1011 cm \u00d7 (Hz)1\/2\/W, with the dark current density reduced and responsivity unchanged. The result of this work demonstrates a facile method to create high-performance Si sub-bandgap NIR PDs for promising applications at ambient temperatures.<\/jats:p>","DOI":"10.3390\/s23136184","type":"journal-article","created":{"date-parts":[[2023,7,7]],"date-time":"2023-07-07T01:57:09Z","timestamp":1688695029000},"page":"6184","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":10,"title":["A Silicon Sub-Bandgap Near-Infrared Photodetector with High Detectivity Based on Textured Si\/Au Nanoparticle Schottky Junctions Covered with Graphene Film"],"prefix":"10.3390","volume":"23","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-0758-3344","authenticated-orcid":false,"given":"Xiyuan","family":"Dai","sequence":"first","affiliation":[{"name":"Department of Optical Science and Engineering, and Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Li","family":"Wu","sequence":"additional","affiliation":[{"name":"Department of Optical Science and Engineering, and Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Kaixin","family":"Liu","sequence":"additional","affiliation":[{"name":"Department of Optical Science and Engineering, and Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Fengyang","family":"Ma","sequence":"additional","affiliation":[{"name":"Department of Optical Science and Engineering, and Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yanru","family":"Yang","sequence":"additional","affiliation":[{"name":"Department of Optical Science and Engineering, and Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Liang","family":"Yu","sequence":"additional","affiliation":[{"name":"Department of Optical Science and Engineering, and Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jian","family":"Sun","sequence":"additional","affiliation":[{"name":"Department of Optical Science and Engineering, and Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China"},{"name":"Yiwu Research Institute, Fudan University, Yiwu 322000, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ming","family":"Lu","sequence":"additional","affiliation":[{"name":"Department of Optical Science and Engineering, and Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China"},{"name":"Yiwu Research Institute, Fudan University, Yiwu 322000, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2023,7,6]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"277","DOI":"10.1515\/nanoph-2015-0012","article-title":"State-of-the-art photodetectors for optoelectronic integration at telecommunication wavelength","volume":"4","author":"Eng","year":"2015","journal-title":"Nanophotonics"},{"key":"ref_2","doi-asserted-by":"crossref","unstructured":"Anabestani, H., Nabavi, S., and Bhadra, S. (2022). Advances in Flexible Organic Photodetectors: Materials and Applications. Nanomaterials, 12.","DOI":"10.3390\/nano12213775"},{"key":"ref_3","doi-asserted-by":"crossref","unstructured":"Wang, P., Xue, W., Ci, W., Yang, R., and Xu, X. Intrinsic Vacancy in 2D Defective Semiconductor In2S3 for Artificial Photonic Nociceptor. Mater. Futures, 2023. in press.","DOI":"10.1088\/2752-5724\/acdd87"},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"e2200583","DOI":"10.1002\/smtd.202200583","article-title":"Rational Design of WSe2\/WS2\/WSe2 Dual Junction Phototransistor Incorporating High Responsivity and Detectivity","volume":"6","author":"Luo","year":"2022","journal-title":"Small Methods"},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"895","DOI":"10.1002\/lpor.201600065","article-title":"State-of-the-art all-silicon sub-bandgap photodetectors at telecom and datacom wavelengths","volume":"10","author":"Casalino","year":"2016","journal-title":"Laser Photonics Rev."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"10571","DOI":"10.3390\/s101210571","article-title":"Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives","volume":"10","author":"Casalino","year":"2010","journal-title":"Sensors"},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"702","DOI":"10.1126\/science.1203056","article-title":"Photodetection with Active Optical Antennas","volume":"332","author":"Knight","year":"2011","journal-title":"Science"},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"7103","DOI":"10.1038\/srep07103","article-title":"Random sized plasmonic nanoantennas on Silicon for low-cost broad-band near-infrared photodetection","volume":"4","author":"Nazirzadeh","year":"2014","journal-title":"Sci. Rep."},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"1700059","DOI":"10.1002\/lpor.201700059","article-title":"Enhanced Photoelectric and Photothermal Responses on Silicon Platform by Plasmonic Absorber and Omni-Schottky Junction","volume":"11","author":"Wen","year":"2017","journal-title":"Laser Photonics Rev."},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"061109","DOI":"10.1063\/1.3683546","article-title":"Waveguide-integrated near-infrared detector with self-assembled metal silicide nanoparticles embedded in a silicon p-n junction","volume":"100","author":"Zhu","year":"2012","journal-title":"Appl. Phys. Lett."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"1687","DOI":"10.1021\/nl400196z","article-title":"Embedding plasmonic nanostructure diodes enhances hot electron emission","volume":"13","author":"Knight","year":"2013","journal-title":"Nano Lett."},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"1662","DOI":"10.1364\/PRJ.398450","article-title":"Hybrid nano-scale Au with ITO structure for a high-performance near-infrared silicon-based photodetector with ultralow dark current","volume":"8","author":"Li","year":"2020","journal-title":"Photonics Res."},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"103","DOI":"10.1038\/nphys2493","article-title":"Photocurrent measurements of supercollision cooling in graphene","volume":"9","author":"Graham","year":"2013","journal-title":"Nat. Phys."},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"17663","DOI":"10.1021\/acsami.9b03329","article-title":"Infrared photodetector based on photo-thermionic effect of graphene-nanowalls\/silicon heterojunction","volume":"11","author":"Liu","year":"2019","journal-title":"Acs Appl. Mater. Interfaces"},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"3808","DOI":"10.1021\/nl301774e","article-title":"Graphene-antenna sandwich photodetector","volume":"12","author":"Fang","year":"2012","journal-title":"Nano Lett."},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"1600148","DOI":"10.1002\/lpor.201600148","article-title":"Plasmonic hot electron tunneling photodetection in vertical Au-graphene hybrid nanostructures","volume":"11","author":"Du","year":"2017","journal-title":"Laser Photonics Rev."},{"key":"ref_17","unstructured":"Zaidi, S.H., Ruby, D.S., De Zetter, K., and Gee, J.M. (2002, January 19\u201324). Enhanced near IR absorption in random, RIE-textured silicon solar cells: The role of surface profiles. Proceedings of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, New Orleans, LA, USA."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"33","DOI":"10.1186\/s11671-023-03818-4","article-title":"Sub-bandgap near-infrared photovoltaic response in Au\/Al2O3\/n-Si metal\u2013insulator\u2013semiconductor structure by plasmon-enhanced internal photoemission","volume":"18","author":"Dai","year":"2023","journal-title":"Discov. Nano"},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"589","DOI":"10.1109\/JQE.2013.2261472","article-title":"Graphene-Si Schottky IR Detector","volume":"49","author":"Amirmazlaghani","year":"2013","journal-title":"IEEE J. Quantum Elect."},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"87","DOI":"10.1016\/j.sna.2019.03.054","article-title":"High responsivity and high-speed 1.55 \u03bcm infrared photodetector from self-powered graphene\/Si heterojunction","volume":"291","author":"Wang","year":"2019","journal-title":"Sens. Actuators A Phys."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"82","DOI":"10.1016\/j.solmat.2005.02.007","article-title":"Investigation of various surface passivation schemes for silicon solar cells","volume":"90","author":"Lee","year":"2006","journal-title":"Sol. Energ. Mat. Sol. C"},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"10451","DOI":"10.1073\/pnas.0502848102","article-title":"Two-dimensional atomic crystals","volume":"102","author":"Novoselov","year":"2005","journal-title":"Proc. Natl. Acad. Sci. USA"},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"7810","DOI":"10.1038\/srep07810","article-title":"Broadband optical absorption by tunable Mie resonances in silicon nanocone arrays","volume":"5","author":"Wang","year":"2015","journal-title":"Sci. Rep."},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"275202","DOI":"10.1088\/1361-6528\/aa74a3","article-title":"Au nanoparticle-decorated silicon pyramids for plasmon-enhanced hot electron near-infrared photodetection","volume":"28","author":"Qi","year":"2017","journal-title":"Nanotechnology"},{"key":"ref_25","doi-asserted-by":"crossref","unstructured":"Li, X., Deng, Z., Ma, Z., Jiang, Y., Du, C., Jia, H., Wang, W., and Chen, H. (2022). Demonstration of SWIR Silicon-Based Photodetection by Using Thin ITO\/Au\/Au Nanoparticles\/n-Si Structure. Sensors, 22.","DOI":"10.3390\/s22124536"},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"335","DOI":"10.1364\/OPTICA.2.000335","article-title":"Plasmonic enhanced silicon pyramids for internal photoemission Schottky detectors in the near-infrared regime","volume":"2","author":"Desiatov","year":"2015","journal-title":"Optica"},{"key":"ref_27","doi-asserted-by":"crossref","first-page":"1643","DOI":"10.1038\/ncomms2642","article-title":"Narrowband photodetection in the near-infrared with a plasmon-induced hot electron device","volume":"4","author":"Sobhani","year":"2013","journal-title":"Nat. Commun."},{"key":"ref_28","doi-asserted-by":"crossref","first-page":"1308","DOI":"10.1126\/science.1156965","article-title":"Fine structure constant defines visual transparency of graphene","volume":"320","author":"Nair","year":"2008","journal-title":"Science"},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"25078","DOI":"10.1039\/C8CP03293A","article-title":"The effect of graphene on surface plasmon resonance of metal nanoparticles","volume":"20","author":"Nan","year":"2018","journal-title":"Phys. Chem. Chem. Phys."},{"key":"ref_30","first-page":"232","article-title":"Raman spectroscopy of graphene","volume":"14","author":"Casiraghi","year":"2012","journal-title":"Phys. Chem. Chem. Phys."},{"key":"ref_31","doi-asserted-by":"crossref","first-page":"235","DOI":"10.1038\/nnano.2013.46","article-title":"Raman spectroscopy as a versatile tool for studying the properties of graphene","volume":"8","author":"Ferrari","year":"2013","journal-title":"Nat. Nanotechnol."},{"key":"ref_32","doi-asserted-by":"crossref","first-page":"924","DOI":"10.1039\/C5TC01759A","article-title":"Recent progress in the applications of graphene in surface-enhanced Raman scattering and plasmon-induced catalytic reactions","volume":"3","author":"Kang","year":"2015","journal-title":"J. Mater. Chem. C"},{"key":"ref_33","doi-asserted-by":"crossref","first-page":"183901","DOI":"10.1063\/1.4901106","article-title":"Enhanced efficiency of graphene-silicon Schottky junction solar cells by doping with Au nanoparticles","volume":"105","author":"Liu","year":"2014","journal-title":"Appl. Phys. Lett."},{"key":"ref_34","doi-asserted-by":"crossref","first-page":"1801729","DOI":"10.1002\/adma.201801729","article-title":"Solution-Processed 3D RGO\u2013MoS2\/Pyramid Si Heterojunction for Ultrahigh Detectivity and Ultra-Broadband Photodetection","volume":"30","author":"Xiao","year":"2018","journal-title":"Adv. Mater."},{"key":"ref_35","doi-asserted-by":"crossref","first-page":"2392","DOI":"10.1002\/smll.201403422","article-title":"Surface Plasmon-Enhanced Photodetection in Few Layer MoS2 Phototransistors with Au Nanostructure Arrays","volume":"11","author":"Miao","year":"2015","journal-title":"Small"},{"key":"ref_36","doi-asserted-by":"crossref","first-page":"10321","DOI":"10.1021\/acsnano.7b05071","article-title":"Superior Plasmonic Photodetectors Based on Au@MoS2 Core-Shell Heterostructures","volume":"11","author":"Li","year":"2017","journal-title":"ACS Nano"},{"key":"ref_37","doi-asserted-by":"crossref","first-page":"8739","DOI":"10.1021\/acsnano.8b04931","article-title":"A Dual-Band Multilayer InSe Self-Powered Photodetector with High Performance Induced by Surface Plasmon Resonance and Asymmetric Schottky Junction","volume":"12","author":"Dai","year":"2018","journal-title":"ACS Nano"},{"key":"ref_38","doi-asserted-by":"crossref","first-page":"4059","DOI":"10.1021\/acs.nanolett.5b01070","article-title":"Plasmon Enhanced Internal Photoemission in Antenna-Spacer-Mirror Based Au\/TiO2 Nanostructures","volume":"15","author":"Fang","year":"2015","journal-title":"Nano Lett."},{"key":"ref_39","doi-asserted-by":"crossref","first-page":"85","DOI":"10.1063\/1.97359","article-title":"Extraction of Schottky diode parameters from forward current-voltage characteristics","volume":"49","author":"Cheung","year":"1986","journal-title":"Appl. Phys. Lett."},{"key":"ref_40","doi-asserted-by":"crossref","first-page":"3488","DOI":"10.1021\/nl802476m","article-title":"Schottky solar cells based on colloidal nanocrystal films","volume":"8","author":"Luther","year":"2008","journal-title":"Nano Lett."},{"key":"ref_41","doi-asserted-by":"crossref","first-page":"6020","DOI":"10.1021\/acsomega.9b00267","article-title":"Photodetection by Hot Electrons or Hot Holes: A Comparable Study on Physics and Performances","volume":"4","author":"Sun","year":"2019","journal-title":"ACS Omega"},{"key":"ref_42","doi-asserted-by":"crossref","first-page":"1337","DOI":"10.1109\/LED.2013.2275169","article-title":"High-Sensitivity and Fast-Response Graphene\/Crystalline Silicon Schottky Junction-Based Near-IR Photodetectors","volume":"34","author":"Lv","year":"2013","journal-title":"IEEE Electr. Device L"},{"key":"ref_43","doi-asserted-by":"crossref","first-page":"9362","DOI":"10.1021\/am4026505","article-title":"Monolayer Graphene\/Germanium Schottky Junction as High-Performance Self-Driven Infrared Light Photodetector","volume":"5","author":"Zeng","year":"2013","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_44","doi-asserted-by":"crossref","first-page":"1901808","DOI":"10.1002\/adom.201901808","article-title":"Black Silicon Photodetector with Excellent Comprehensive Properties by Rapid Thermal Annealing and Hydrogenated Surface Passivation","volume":"8","author":"Huang","year":"2020","journal-title":"Adv. Opt. Mater."},{"key":"ref_45","doi-asserted-by":"crossref","first-page":"6534","DOI":"10.1021\/acsnano.2c11925","article-title":"Ferroelectrically Modulated and Enhanced Photoresponse in a Self-Powered \u03b1-In2Se3\/Si Heterojunction Photodetector","volume":"17","author":"Jia","year":"2023","journal-title":"ACS Nano"},{"key":"ref_46","doi-asserted-by":"crossref","first-page":"2743","DOI":"10.1002\/adma.200904383","article-title":"Graphene-on-silicon Schottky junction solar cells","volume":"22","author":"Li","year":"2010","journal-title":"Adv Mater"},{"key":"ref_47","doi-asserted-by":"crossref","first-page":"133113","DOI":"10.1063\/1.3643473","article-title":"Monolayer graphene film\/silicon nanowire array Schottky junction solar cells","volume":"99","author":"Xie","year":"2011","journal-title":"Appl. Phys. Lett."},{"key":"ref_48","doi-asserted-by":"crossref","first-page":"220901","DOI":"10.1063\/5.0005334","article-title":"Plasmonic hot electrons for sensing, photodetection, and solar energy applications: A perspective","volume":"152","author":"Tang","year":"2020","journal-title":"J. Chem. Phys."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/23\/13\/6184\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,10]],"date-time":"2025-10-10T20:07:04Z","timestamp":1760126824000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/23\/13\/6184"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,7,6]]},"references-count":48,"journal-issue":{"issue":"13","published-online":{"date-parts":[[2023,7]]}},"alternative-id":["s23136184"],"URL":"https:\/\/doi.org\/10.3390\/s23136184","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2023,7,6]]}}}