{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,28]],"date-time":"2026-08-28T03:15:23Z","timestamp":1787886923370,"version":"build-2784847793"},"reference-count":18,"publisher":"MDPI AG","issue":"13","license":[{"start":{"date-parts":[[2023,7,7]],"date-time":"2023-07-07T00:00:00Z","timestamp":1688688000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"European Union\u2019s Horizon 2020 Research and Innovation program","award":["101004761"],"award-info":[{"award-number":["101004761"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Pixelated low-gain avalanche diodes (LGADs) can provide both precision spatial and temporal measurements for charged particle detection; however, electrical termination between the pixels yields a no-gain region, such that the active area or fill factor is not sufficient for small pixel sizes. Trench-isolated LGADs (TI-LGADs) are a strong candidate for solving the fill-factor problem, as the p-stop termination structure is replaced by isolated trenches etched in the silicon itself. In the TI-LGAD process, the p-stop termination structure, typical of LGADs, is replaced by isolating trenches etched in the silicon itself. This modification substantially reduces the size of the no-gain region, thus enabling the implementation of small pixels with an adequate fill factor value. In this article, a systematic characterization of the TI-RD50 production, the first of its kind entirely dedicated to the TI-LGAD technology, is presented. Designs are ranked according to their measured inter-pixel distance, and the time resolution is compared against the regular LGAD technology.<\/jats:p>","DOI":"10.3390\/s23136225","type":"journal-article","created":{"date-parts":[[2023,7,10]],"date-time":"2023-07-10T01:02:50Z","timestamp":1688950970000},"page":"6225","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":11,"title":["A Comprehensive Characterization of the TI-LGAD Technology"],"prefix":"10.3390","volume":"23","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-1992-5711","authenticated-orcid":false,"given":"Matias","family":"Senger","sequence":"first","affiliation":[{"name":"Physics Institute, University of Zurich, Irchel Campus, 8057 Zurich, Switzerland"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Anna","family":"Macchiolo","sequence":"additional","affiliation":[{"name":"Physics Institute, University of Zurich, Irchel Campus, 8057 Zurich, Switzerland"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ben","family":"Kilminster","sequence":"additional","affiliation":[{"name":"Physics Institute, University of Zurich, Irchel Campus, 8057 Zurich, Switzerland"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Giovanni","family":"Paternoster","sequence":"additional","affiliation":[{"name":"Fondazione Bruno Kessler (FBK), 38123 Trento, Italy"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Matteo","family":"Centis Vignali","sequence":"additional","affiliation":[{"name":"Fondazione Bruno Kessler (FBK), 38123 Trento, Italy"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8488-4728","authenticated-orcid":false,"given":"Giacomo","family":"Borghi","sequence":"additional","affiliation":[{"name":"Campus Leonardo, Politecnico di Milano, 20133 Milan, Italy"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2023,7,7]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Ferrero, M., Arcidiacono, R., Mandurrino, M., Sola, V., and Cartiglia, N. 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