{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,8]],"date-time":"2026-04-08T01:48:21Z","timestamp":1775612901912,"version":"3.50.1"},"reference-count":45,"publisher":"MDPI AG","issue":"14","license":[{"start":{"date-parts":[[2023,7,19]],"date-time":"2023-07-19T00:00:00Z","timestamp":1689724800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"European Union (NextGeneration EU)","award":["ECS00000022"],"award-info":[{"award-number":["ECS00000022"]}]},{"name":"INFN Committee for Technological Research","award":["ECS00000022"],"award-info":[{"award-number":["ECS00000022"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>While silicon has been a steadfast semiconductor material for the past 50 years, it is now facing competition from other materials, especially for detector design. In that respect, due to its high resistance to radiation damage, silicon carbide is one of the most promising materials. In this work, we discuss the radiation damage studies of a new, large area, p-n junction silicon carbide device developed by the SiCILIA collaboration. We have studied the general performances of several devices, as a function of fluence, irradiated in different experimental conditions with different beams. A standard p-n junction silicon detector was also irradiated for comparison. The new detectors manifest excellent performance in terms of stability of the main parameters, linearity, defect distribution, charge collection efficiency, energy resolution, leakage current, etc. Experimental results evidence a radiation resistance of SiC devices more than two order of magnitude higher than Si devices. The new construction technology applied to silicon carbide material has made it possible to create very robust devices with excellent performance. These devices will soon be available for all those scientific projects where a high resistance to radiation damage is required.<\/jats:p>","DOI":"10.3390\/s23146522","type":"journal-article","created":{"date-parts":[[2023,7,19]],"date-time":"2023-07-19T21:22:58Z","timestamp":1689801778000},"page":"6522","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":28,"title":["Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors"],"prefix":"10.3390","volume":"23","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-4881-1641","authenticated-orcid":false,"given":"Carmen","family":"Altana","sequence":"first","affiliation":[{"name":"Laboratori Nazionali del Sud (LNS), Istituto Nazionale di Fisica Nucleare (INFN), 95123 Catania, Italy"}]},{"given":"Lucia","family":"Calcagno","sequence":"additional","affiliation":[{"name":"Istituto Nazionale di Fisica Nucleare (INFN)\u2014Sezione di Catania, 95123 Catania, Italy"},{"name":"Physics and Astronomy Department, Catania University, 95123 Catania, Italy"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8142-0052","authenticated-orcid":false,"given":"Caterina","family":"Ciampi","sequence":"additional","affiliation":[{"name":"Physics and Astronomy Department, Florence University, 50019 Florence, Italy"},{"name":"Istituto Nazionale di Fisica Nucleare (INFN)\u2014Sezione di Firenze, 50019 Florence, Italy"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6842-581X","authenticated-orcid":false,"given":"Francesco","family":"La Via","sequence":"additional","affiliation":[{"name":"Institute for Microelectronics and Microsystems (IMM), National Research Council (CNR), 95121 Catania, Italy"}]},{"given":"Gaetano","family":"Lanzalone","sequence":"additional","affiliation":[{"name":"Laboratori Nazionali del Sud (LNS), Istituto Nazionale di Fisica Nucleare (INFN), 95123 Catania, Italy"},{"name":"Department of Engineering and Architecture, KORE University, Cittadella Universitaria, 94100 Enna, Italy"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0837-187X","authenticated-orcid":false,"given":"Annamaria","family":"Muoio","sequence":"additional","affiliation":[{"name":"Institute for Microelectronics and Microsystems (IMM), National Research Council (CNR), 95121 Catania, Italy"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3166-3857","authenticated-orcid":false,"given":"Gabriele","family":"Pasquali","sequence":"additional","affiliation":[{"name":"Physics and Astronomy Department, Florence University, 50019 Florence, Italy"},{"name":"Istituto Nazionale di Fisica Nucleare (INFN)\u2014Sezione di Firenze, 50019 Florence, Italy"}]},{"given":"Domenico","family":"Pellegrino","sequence":"additional","affiliation":[{"name":"Physics and Astronomy Department, Catania University, 95123 Catania, Italy"}]},{"given":"Sebastiana","family":"Puglia","sequence":"additional","affiliation":[{"name":"Istituto Nazionale di Fisica Nucleare (INFN)\u2014Sezione di Catania, 95123 Catania, Italy"},{"name":"Physics and Astronomy Department, Catania University, 95123 Catania, Italy"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4064-2609","authenticated-orcid":false,"given":"Giuseppe","family":"Rapisarda","sequence":"additional","affiliation":[{"name":"Laboratori Nazionali del Sud (LNS), Istituto Nazionale di Fisica Nucleare (INFN), 95123 Catania, Italy"},{"name":"Physics and Astronomy Department, Catania University, 95123 Catania, Italy"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9390-9912","authenticated-orcid":false,"given":"Salvatore","family":"Tudisco","sequence":"additional","affiliation":[{"name":"Laboratori Nazionali del Sud (LNS), Istituto Nazionale di Fisica Nucleare (INFN), 95123 Catania, Italy"}]}],"member":"1968","published-online":{"date-parts":[[2023,7,19]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"102001","DOI":"10.1088\/0957-0233\/19\/10\/102001","article-title":"Silicon Carbide and Its Use as a Radiation Detector Material","volume":"19","author":"Nava","year":"2008","journal-title":"Meas. 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