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For achieving wide operational bandwidth and flat in-band characteristics simultaneously, the proposed LNA employs a variety of circuit design techniques, including a voltage\u2013current (shunt\u2013shunt) negative feedback configuration, inductive emitter degeneration, a main branch with an added cascode stage, and the shunt-peaking technique. The use of a feedback network and emitter degeneration provides broadened transfer characteristics for multi-octave coverage and a real impedance for input matching, respectively. In addition, the cascode stage pushes the band-limiting low-frequency pole, due to the Miller capacitance, to a higher frequency. Lastly, the shunt-peaking approach is optimized for the compensation of a gain reduction at higher frequency bands. The wideband LNA proposed in this study is fabricated using a commercial 0.13 \u03bcm silicon-germanium (SiGe) BiCMOS process, employing SiGe heterojunction bipolar transistors (HBTs) as the circuit\u2019s core active elements in the main branch. The measurement results show an operational bandwidth of 2.0\u201329.2 GHz, a noise figure of 4.16 dB (below 26.5 GHz, which was the measurement limit), and a total power consumption of 23.1 mW under a supply voltage of 3.3 V. Regarding the nonlinearity associated with large-signal behavior, the proposed LNA exhibits an input 1-dB compression (IP1dB) point of \u22125.42 dBm at 12 GHz. These performance numbers confirm the strong viability of the proposed approach in comparison with other state-of-the-art designs.<\/jats:p>","DOI":"10.3390\/s23156745","type":"journal-article","created":{"date-parts":[[2023,7,28]],"date-time":"2023-07-28T07:58:52Z","timestamp":1690531132000},"page":"6745","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":5,"title":["Wideband SiGe-HBT Low-Noise Amplifier with Resistive Feedback and Shunt Peaking"],"prefix":"10.3390","volume":"23","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-7669-9853","authenticated-orcid":false,"given":"Ickhyun","family":"Song","sequence":"first","affiliation":[{"name":"Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea"}]},{"given":"Gyungtae","family":"Ryu","sequence":"additional","affiliation":[{"name":"Division of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 04763, Republic of Korea"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3985-6071","authenticated-orcid":false,"given":"Seung Hwan","family":"Jung","sequence":"additional","affiliation":[{"name":"GRIT Custom-IC Corp., Seoul 01886, Republic of Korea"}]},{"given":"John D.","family":"Cressler","sequence":"additional","affiliation":[{"name":"School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30318, USA"}]},{"given":"Moon-Kyu","family":"Cho","sequence":"additional","affiliation":[{"name":"Department of Computer Engineering, Korea National University of Transportation, Chungju-si 27469, Republic of Korea"}]}],"member":"1968","published-online":{"date-parts":[[2023,7,28]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"387","DOI":"10.1109\/4.661204","article-title":"Integrated circuit technology options for RFICs-present status and future directions","volume":"33","author":"Larson","year":"1998","journal-title":"IEEE J. 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