{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,18]],"date-time":"2026-06-18T06:43:15Z","timestamp":1781764995508,"version":"3.54.5"},"reference-count":24,"publisher":"MDPI AG","issue":"15","license":[{"start":{"date-parts":[[2023,8,3]],"date-time":"2023-08-03T00:00:00Z","timestamp":1691020800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"Czech Science Foundation","award":["GACR 23-04869M"],"award-info":[{"award-number":["GACR 23-04869M"]}]},{"name":"Czech Science Foundation","award":["730983"],"award-info":[{"award-number":["730983"]}]},{"name":"INSPIRE","award":["GACR 23-04869M"],"award-info":[{"award-number":["GACR 23-04869M"]}]},{"name":"INSPIRE","award":["730983"],"award-info":[{"award-number":["730983"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>The response of Timepix3 detectors with 300 \u00b5m and 500 \u00b5m thick HR GaAs:Cr sensors was studied with particle beams at the Danish Centre for Particle Therapy in Aarhus, Denmark. Therefore, the detectors were irradiated at different angles with protons of 240 MeV. The precise per-pixel time and energy measurements were exploited in order to determine the charge carrier transport properties. Using the tracks left by the penetrating charged particles hitting the sensor at the grazing angle, we were able to determine the charge collection efficiency, the charge carrier drift times across the sensor thickness, the dependency of the electron, and for the first time, the hole drift velocity on the electric field. Moreover, extracting the dependence of the charge cloud size on the interaction depth for different bias voltages, it was possible to determine the dependence of the diffusion coefficient on the applied bias voltage. A good agreement was found with the previously reported values for n-type GaAs. The measurements were conducted for different detector assemblies to estimate the systematic differences between them, and to generalize the results. The experimental findings were implemented into the Allpix Squared simulation framework and validated by a comparison of the measurement and simulation for the 241Am \u03b3-ray source.<\/jats:p>","DOI":"10.3390\/s23156886","type":"journal-article","created":{"date-parts":[[2023,8,3]],"date-time":"2023-08-03T11:23:03Z","timestamp":1691061783000},"page":"6886","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":5,"title":["Experimental Determination of the Charge Carrier Transport Models for Improving the Simulation of the HR GaAs:Cr Detectors\u2019 Response"],"prefix":"10.3390","volume":"23","author":[{"given":"Petr","family":"Smolyanskiy","sequence":"first","affiliation":[{"name":"Institute of Experimental and Applied Physics, Czech Technical University in Prague, Husova 240\/5, 110 00 Prague, Czech Republic"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Petr","family":"Burian","sequence":"additional","affiliation":[{"name":"Institute of Experimental and Applied Physics, Czech Technical University in Prague, Husova 240\/5, 110 00 Prague, Czech Republic"},{"name":"Faculty of Electrical Engineering, University of West Bohemia, Univerzitni 26, 108 00 Pilsen, Czech Republic"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Mateusz","family":"Sitarz","sequence":"additional","affiliation":[{"name":"Danish Centre for Particle Therapy, Aarhus University Hospital, Palle Juul-Jensens Boulevard 99, 8200 Aarhus, Denmark"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8076-5614","authenticated-orcid":false,"given":"Benedikt","family":"Bergmann","sequence":"additional","affiliation":[{"name":"Institute of Experimental and Applied Physics, Czech Technical University in Prague, Husova 240\/5, 110 00 Prague, Czech Republic"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2023,8,3]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"34","DOI":"10.1016\/S0168-9002(03)01545-6","article-title":"GaAs radiation imaging detectors with an active layer thickness up to 1 mm","volume":"509","author":"Tyazhev","year":"2003","journal-title":"Nucl. 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