{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,7]],"date-time":"2026-03-07T02:14:43Z","timestamp":1772849683568,"version":"3.50.1"},"reference-count":15,"publisher":"MDPI AG","issue":"17","license":[{"start":{"date-parts":[[2023,8,23]],"date-time":"2023-08-23T00:00:00Z","timestamp":1692748800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"\u201cSmart Imaging\u201d Consortium Israel Innovation Authority","award":["74391"],"award-info":[{"award-number":["74391"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>A stochastic model for characterizing the conversion gain of Active Pixel Complementary metal\u2013oxide\u2013semiconductor (CMOS) image sensors (APS), assuming stationary conditions was recently presented in this journal. In this study, we extend the stochastic approach to non-stationary conditions. Non-stationary conditions occur in gated imaging applications. This new stochastic model, which is based on fundamental physical considerations, enlightens us with new insights into gated CMOS imaging, regardless of the sensor. The Signal-to-Noise Ratio (SNR) is simulated, allowing optimized performance. The conversion gain should be determined under stationary conditions.<\/jats:p>","DOI":"10.3390\/s23177344","type":"journal-article","created":{"date-parts":[[2023,8,23]],"date-time":"2023-08-23T08:20:30Z","timestamp":1692778830000},"page":"7344","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":3,"title":["Modeling Signal-to-Noise Ratio of CMOS Image Sensors with a Stochastic Approach under Non-Stationary Conditions"],"prefix":"10.3390","volume":"23","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-1820-762X","authenticated-orcid":false,"given":"Gil","family":"Cherniak","sequence":"first","affiliation":[{"name":"Electrical Engineering Department, Technion\u2014Israel Institute of Technology, Haifa 3200003, Israel"}]},{"given":"Jonathan","family":"Nemirovsky","sequence":"additional","affiliation":[{"name":"Electrical Engineering Department, Technion\u2014Israel Institute of Technology, Haifa 3200003, Israel"}]},{"given":"Amikam","family":"Nemirovsky","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering, Kinneret College on the Sea of Galilee, Tzemah 1513200, Israel"}]},{"given":"Yael","family":"Nemirovsky","sequence":"additional","affiliation":[{"name":"Electrical Engineering Department, Technion\u2014Israel Institute of Technology, Haifa 3200003, Israel"}]}],"member":"1968","published-online":{"date-parts":[[2023,8,23]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"1847","DOI":"10.1109\/JSSC.2005.848173","article-title":"Design and characterization of a CMOS 3-D image sensor based on single photon avalanche diodes","volume":"40","author":"Niclass","year":"2005","journal-title":"IEEE J. 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