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The 10th harmonics, which are high-frequency components 10 times the fundamental frequency, are generated in the plasma sheath because of their nonlinear nature. An artificial neural network with a three-hidden-layer architecture was applied and optimized using k-fold cross-validation to analyze the harmonics generated in the plasma sheath during the deposition process. The model exhibited a binary cross-entropy loss of 0.1277 and achieved an accuracy of 0.9461. This approach enables the accurate prediction of process performance, resulting in significant cost reduction and enhancement of semiconductor manufacturing processes. This model has the potential to improve defect control and yield, thereby benefiting the semiconductor industry. Despite the limitations imposed by the limited dataset, the model demonstrated promising results, and further performance improvements are anticipated with the inclusion of additional data in future studies.<\/jats:p>","DOI":"10.3390\/s23198226","type":"journal-article","created":{"date-parts":[[2023,10,2]],"date-time":"2023-10-02T11:56:49Z","timestamp":1696247809000},"page":"8226","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":3,"title":["Artificial-Neural-Network-Driven Innovations in Time-Varying Process Diagnosis of Low-K Oxide Deposition"],"prefix":"10.3390","volume":"23","author":[{"ORCID":"https:\/\/orcid.org\/0009-0005-0674-3133","authenticated-orcid":false,"given":"Seunghwan","family":"Lee","sequence":"first","affiliation":[{"name":"School of Mechanical Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yonggyun","family":"Park","sequence":"additional","affiliation":[{"name":"School of Mechanical Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Pengzhan","family":"Liu","sequence":"additional","affiliation":[{"name":"School of Mechanical Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1102-8194","authenticated-orcid":false,"given":"Muyoung","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Plasma Engineering, Korea Institute of Machinery and Materials (KIMM), Daejeon 34103, Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0018-9603","authenticated-orcid":false,"given":"Hyeong-U","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Plasma Engineering, Korea Institute of Machinery and Materials (KIMM), Daejeon 34103, Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Taesung","family":"Kim","sequence":"additional","affiliation":[{"name":"School of Mechanical Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea"},{"name":"SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2023,10,2]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"058203","DOI":"10.1063\/1.5026805","article-title":"Perspective: New process technologies required for future devices and scaling","volume":"6","author":"Clark","year":"2018","journal-title":"APL Mater."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"109","DOI":"10.1147\/rd.431.0109","article-title":"High-density plasma chemical vapor deposition of silicon-based dielectric films for integrated circuits","volume":"43","author":"Nguyen","year":"1999","journal-title":"IBM J. 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