{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T02:36:21Z","timestamp":1760150181397,"version":"build-2065373602"},"reference-count":103,"publisher":"MDPI AG","issue":"21","license":[{"start":{"date-parts":[[2023,10,30]],"date-time":"2023-10-30T00:00:00Z","timestamp":1698624000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100012166","name":"National Key Research and Development Program of China","doi-asserted-by":"publisher","award":["2019YFB2205100","5003190007"],"award-info":[{"award-number":["2019YFB2205100","5003190007"]}],"id":[{"id":"10.13039\/501100012166","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Fundamental Research Funds for the Central Universities\u2019, HUST","award":["2019YFB2205100","5003190007"],"award-info":[{"award-number":["2019YFB2205100","5003190007"]}]},{"name":"Hubei Key Laboratory of Advanced Memories, Hubei Engineering Research Center on Microelectronics","award":["2019YFB2205100","5003190007"],"award-info":[{"award-number":["2019YFB2205100","5003190007"]}]},{"name":"Chua Memristor Institute","award":["2019YFB2205100","5003190007"],"award-info":[{"award-number":["2019YFB2205100","5003190007"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Topological phase transition materials have strong coupling between their charge, spin orbitals, and lattice structure, which makes them have good electrical and magnetic properties, leading to promising applications in the fields of memristive devices. The smaller Gibbs free energy difference between the topological phases, the stable oxygen vacancy ordered structure, and the reversible topological phase transition promote the memristive effect, which is more conducive to its application in information storage, information processing, information calculation, and other related fields. In particular, extracting the current resistance or conductance of the two-terminal memristor to convert to the weight of the synapse in the neural network can simulate the behavior of biological synapses in their structure and function. In addition, in order to improve the performance of memristors and better apply them to neuromorphic computing, methods such as ion doping, electrode selection, interface modulation, and preparation process control have been demonstrated in memristors based on topological phase transition materials. At present, it is considered an effective method to obtain a unique resistive switching behavior by improving the process of preparing functional layers, regulating the crystal phase of topological phase transition materials, and constructing interface barrier-dependent devices. In this review, we systematically expound the resistance switching mechanism, resistance switching performance regulation, and neuromorphic computing of topological phase transition memristors, and provide some suggestions for the challenges faced by the development of the next generation of non-volatile memory and brain-like neuromorphic devices based on topological phase transition materials.<\/jats:p>","DOI":"10.3390\/s23218838","type":"journal-article","created":{"date-parts":[[2023,10,30]],"date-time":"2023-10-30T13:26:55Z","timestamp":1698672415000},"page":"8838","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Research Progress on the Application of Topological Phase Transition Materials in the Field of Memristor and Neuromorphic Computing"],"prefix":"10.3390","volume":"23","author":[{"given":"Runqing","family":"Zhang","sequence":"first","affiliation":[{"name":"School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China"}]},{"given":"Rui","family":"Su","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China"}]},{"given":"Chenglin","family":"Shen","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China"}]},{"given":"Ruizi","family":"Xiao","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China"}]},{"given":"Weiming","family":"Cheng","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China"}]},{"given":"Xiangshui","family":"Miao","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China"}]}],"member":"1968","published-online":{"date-parts":[[2023,10,30]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"1379","DOI":"10.1109\/JPROC.2015.2444094","article-title":"Memory and Information Processing in Neuromorphic Systems","volume":"103","author":"Indiveri","year":"2015","journal-title":"Proc. IEEE"},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"507","DOI":"10.1109\/TCT.1971.1083337","article-title":"Memristor: The missing circuit element","volume":"18","author":"Chua","year":"1997","journal-title":"IEEE Trans. Circuit Theory"},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"80","DOI":"10.1038\/nature06932","article-title":"The missing memristor found","volume":"453","author":"Strukov","year":"2008","journal-title":"Nature"},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"2385","DOI":"10.1038\/s41467-018-04484-2","article-title":"Efficient and Self-adaptive In-situ Learning in Multilayer Memristor Neural Networks","volume":"9","author":"Li","year":"2018","journal-title":"Nat. Commun."},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"1097","DOI":"10.1038\/s41427-018-0101-y","article-title":"A Self-rectifying TaOy\/nanoporous Taox Memristor synaptic array for learning and energy-efficient neuromorphic systems","volume":"10","author":"Choi","year":"2018","journal-title":"NPG Asia Mater."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"2201488","DOI":"10.1002\/adma.202201488","article-title":"In-Memory Computing using Memristor Arrays with Ultrathin 2D PdSeOx\/PdSe2 Heterostructure","volume":"34","author":"Li","year":"2022","journal-title":"Adv. Mater."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"141","DOI":"10.1038\/s41563-018-0248-5","article-title":"Ionic modulation and Ionic coupling effects in MoS2 devices for neuromorphic computing","volume":"18","author":"Zhu","year":"2018","journal-title":"Nat. Mater."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"500","DOI":"10.1038\/nature25747","article-title":"Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide","volume":"554","author":"Sangwan","year":"2018","journal-title":"Nature"},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"106131","DOI":"10.1016\/j.mssp.2021.106131","article-title":"Linearity improvement of HfOx-based memristor with multilayer structure","volume":"136","author":"Jiang","year":"2021","journal-title":"Mater. Sci. Semicond. Process."},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"021003","DOI":"10.1088\/2634-4386\/ac7327","article-title":"Physics-based compact modelling of the analog dynamics of HfOx resistive memories","volume":"2","author":"Vaccaro","year":"2022","journal-title":"Neuromorph. Comput. Eng."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"063507","DOI":"10.1063\/1.3624472","article-title":"Conduction mechanism of TiN\/HfOx\/Pt resistive switching memory: A trap-assisted-tunneling model","volume":"99","author":"Yu","year":"2011","journal-title":"Appl. Phys. Lett."},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"205109","DOI":"10.1063\/1.5038919","article-title":"Aspects of the a-TiOx memristor active medium technology","volume":"124","author":"Palagushkin","year":"2018","journal-title":"J. Appl. Phys."},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"2003765","DOI":"10.1002\/advs.202003765","article-title":"Negative Photoconductance Effect: An Extension Function of the TiOx-Based Memristor","volume":"8","author":"Zhou","year":"2021","journal-title":"Adv. Sci."},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"223510","DOI":"10.1063\/1.2818691","article-title":"High speed resistive switching in Pt\/TiO2\/TiN film for nonvolatile memory application","volume":"91","author":"Yoshida","year":"2007","journal-title":"Appl. Phys. Lett."},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"84","DOI":"10.1186\/s11671-022-03722-3","article-title":"Multi-level cells and quantized conductance characteristics of Al2O3-based RRAM device for neuromorphic system","volume":"17","author":"Lee","year":"2022","journal-title":"Nanoscale Res. Lett."},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"149094","DOI":"10.1016\/j.apsusc.2021.149094","article-title":"Annealed AlOx film with enhanced performance for Bipolar Resistive Switching Memory","volume":"546","author":"Wang","year":"2021","journal-title":"Appl. Surf. Sci."},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"1288","DOI":"10.1021\/acsaelm.0c01094","article-title":"Artificial synaptic performance with learning behavior for memristor fabricated with stacked solution-processed switching layers","volume":"3","author":"Shen","year":"2021","journal-title":"ACS Appl. Electron. Mater."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"21883","DOI":"10.1021\/acsami.0c03684","article-title":"Nanoscale phase mixture and Multifield-induced topotactic phase transformation in SrFeOx","volume":"12","author":"Tian","year":"2020","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"1853","DOI":"10.1038\/s41467-021-22099-y","article-title":"Near-room temperature ferromagnetic insulating state in highly distorted LaCoO2.5 with CoO5 Square Pyramids","volume":"12","author":"Zhang","year":"2021","journal-title":"Nat. Commun."},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"36800","DOI":"10.1021\/acsami.9b08406","article-title":"Strain-inhibited electromigration of oxygen vacancies in LaCoO3","volume":"11","author":"Zhu","year":"2019","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"124","DOI":"10.1038\/nature22389","article-title":"Electric-field control of tri-state phase transformation with a selective dual-ion switch","volume":"546","author":"Lu","year":"2017","journal-title":"Nature"},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"152402","DOI":"10.1063\/1.4801646","article-title":"Suppression of magnetic phase separation in epitaxial SrCoOx films","volume":"102","author":"Rueckert","year":"2013","journal-title":"Appl. Phys. Lett."},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"51205","DOI":"10.1021\/acsami.1c13828","article-title":"Doping- and strain-dependent electrolyte-gate-induced perovskite to brownmillerite transformation in epitaxial La1\u2013xSrxCoO3\u2212\u03b4 films","volume":"13","author":"Chaturvedi","year":"2021","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"046002","DOI":"10.1103\/PhysRevMaterials.4.046002","article-title":"Reversible thermal strain control of oxygen vacancy ordering in an epitaxial La0.5Sr0.5CoO3\u2212\u03b4 film","volume":"4","author":"Inkinen","year":"2020","journal-title":"Phys. Rev. Mater."},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"10898","DOI":"10.1021\/acsami.1c20590","article-title":"Reversible hydrogen-induced phase transformations in La0.7Sr0.3MnO3 thin films characterized by in situ neutron reflectometry","volume":"14","author":"Mazza","year":"2022","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"2104356","DOI":"10.1002\/smll.202104356","article-title":"Migration kinetics of surface ions in oxygen-deficient perovskite during Topotactic transitions","volume":"17","author":"Cao","year":"2021","journal-title":"Small"},{"key":"ref_27","doi-asserted-by":"crossref","first-page":"1064","DOI":"10.1038\/ncomms2061","article-title":"Tunable ferroelectricity in artificial tri-layer superlattices comprised of non-ferroic components","volume":"3","author":"Rogdakis","year":"2012","journal-title":"Nat. Commun."},{"key":"ref_28","doi-asserted-by":"crossref","first-page":"321","DOI":"10.1007\/s11467-015-0467-z","article-title":"Epitaxial growth and thermostability of cubic and hexagonal SrMnO3 films on SrTiO3(111)","volume":"10","author":"Song","year":"2015","journal-title":"Front Phys."},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"392","DOI":"10.1016\/S0022-4596(03)00258-5","article-title":"Phase transitions in the srsno3\u2013SRFEO3 solid solutions: X-ray diffraction and M\u00f6ssbauer Studies","volume":"174","author":"Beurmann","year":"2003","journal-title":"J. Solid State Chem."},{"key":"ref_30","doi-asserted-by":"crossref","first-page":"753","DOI":"10.1002\/adfm.201504036","article-title":"Manipulation of electric field effect by Orbital Switch","volume":"26","author":"Cui","year":"2015","journal-title":"Adv. Funct. Mater."},{"key":"ref_31","doi-asserted-by":"crossref","first-page":"816","DOI":"10.1038\/nmat1498","article-title":"Blue-light emission at room temperature from Ar+-irradiated SrTiO3","volume":"4","author":"Kan","year":"2005","journal-title":"Nat. Mater."},{"key":"ref_32","doi-asserted-by":"crossref","first-page":"1057","DOI":"10.1038\/nmat3736","article-title":"Reversible redox reactions in an epitaxially stabilized SrCoOx oxygen sponge","volume":"12","author":"Jeen","year":"2013","journal-title":"Nat. Mater."},{"key":"ref_33","doi-asserted-by":"crossref","first-page":"1159","DOI":"10.1002\/cctc.201000397","article-title":"Universality in oxygen evolution electrocatalysis on oxide surfaces","volume":"3","author":"Man","year":"2011","journal-title":"ChemCatChem"},{"key":"ref_34","doi-asserted-by":"crossref","first-page":"5565","DOI":"10.1021\/acscatal.6b00937","article-title":"Formation and migration of oxygen vacancies in SrCoO3 and their effect on oxygen evolution reactions","volume":"6","author":"Tahini","year":"2016","journal-title":"ACS Catal."},{"key":"ref_35","doi-asserted-by":"crossref","first-page":"320","DOI":"10.1006\/jssc.2001.9120","article-title":"Electrical properties of the ferrite SrFeOy at high temperatures","volume":"158","author":"Kozhevnikov","year":"2001","journal-title":"J. Solid State Chem."},{"key":"ref_36","doi-asserted-by":"crossref","first-page":"033708","DOI":"10.1063\/1.3610526","article-title":"Local electronic structure analysis for Brownmillerite Ca(Sr)FeO2.5 using site-resolved energy-loss near-edge structures","volume":"110","author":"Haruta","year":"2011","journal-title":"J. Appl. Phys."},{"key":"ref_37","doi-asserted-by":"crossref","first-page":"5154","DOI":"10.1021\/jp909091s","article-title":"Valence band structure and X-ray spectra of oxygen-deficient ferrites SrFeOx","volume":"114","author":"Galakhov","year":"2010","journal-title":"J. Phys. Chem. C"},{"key":"ref_38","doi-asserted-by":"crossref","first-page":"1606566","DOI":"10.1002\/adma.201606566","article-title":"Topotactic Metal\u2013Insulator Transition in Epitaxial SrFeOx Thin Films","volume":"29","author":"Khare","year":"2017","journal-title":"Adv. Mater."},{"key":"ref_39","doi-asserted-by":"crossref","first-page":"1903391","DOI":"10.1002\/adma.201903391","article-title":"Topotactic phase transition driving memristive behavior","volume":"31","author":"Nallagatla","year":"2019","journal-title":"Adv. Mater."},{"key":"ref_40","doi-asserted-by":"crossref","first-page":"100922","DOI":"10.1016\/j.mtphys.2022.100922","article-title":"Atomic-scale observation of strain-dependent reversible topotactic transition in la0.7sr0.3mnox films under an ultra-high vacuum environment","volume":"29","author":"Hu","year":"2022","journal-title":"Mater. Today Phys."},{"key":"ref_41","doi-asserted-by":"crossref","first-page":"052503","DOI":"10.1063\/1.3622644","article-title":"Magnetic phase separation in SrCoOx (2.5\u2009\u2264\u2009x\u2009\u2264\u20093)","volume":"99","author":"Xie","year":"2011","journal-title":"Appl. Phys. Lett."},{"key":"ref_42","doi-asserted-by":"crossref","first-page":"097401","DOI":"10.1103\/PhysRevLett.111.097401","article-title":"Reversal of the Lattice Structure in SrCoOx Epitaxial Thin Films Studied by Real-Time Optical Spectroscopy and First-Principles Calculations","volume":"111","author":"Choi","year":"2013","journal-title":"Phys. Rev. Lett."},{"key":"ref_43","doi-asserted-by":"crossref","first-page":"063507","DOI":"10.1063\/1.4893323","article-title":"Resistance switching in epitaxial SrCoOx thin films","volume":"105","author":"Tambunan","year":"2014","journal-title":"Appl. Phys. Lett."},{"key":"ref_44","doi-asserted-by":"crossref","first-page":"2294","DOI":"10.1039\/D2CS00938B","article-title":"A practical guide to pulsed laser deposition","volume":"52","author":"Shepelin","year":"2023","journal-title":"Chem. Soc. Rev."},{"key":"ref_45","doi-asserted-by":"crossref","first-page":"282","DOI":"10.1016\/j.apsusc.2016.12.046","article-title":"ZnO thin films on single carbon fibres fabricated by pulsed laser deposition (PLD)","volume":"399","author":"Engel","year":"2017","journal-title":"Appl. Surf. Sci."},{"key":"ref_46","doi-asserted-by":"crossref","first-page":"146995","DOI":"10.1016\/j.apsusc.2020.146995","article-title":"The effect of oxygen flow rate on metal\u2013insulator transition (MIT) characteristics of vanadium dioxide (VO2) thin films by pulsed laser deposition (PLD)","volume":"529","author":"Bukhari","year":"2020","journal-title":"Appl. Surf. Sci."},{"key":"ref_47","doi-asserted-by":"crossref","first-page":"7902","DOI":"10.1021\/acsami.6b00647","article-title":"Epitaxial brownmillerite oxide thin films for reliable switching memory","volume":"8","author":"Acharya","year":"2016","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_48","doi-asserted-by":"crossref","first-page":"1903679","DOI":"10.1002\/adma.201903679","article-title":"Nanoscale Topotactic Phase Transformation in SrFeOx Epitaxial Thin Films for High-Density Resistive Switching Memory","volume":"31","author":"Tian","year":"2019","journal-title":"Adv. Mater."},{"key":"ref_49","doi-asserted-by":"crossref","first-page":"625","DOI":"10.1038\/nmat3070","article-title":"A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5\u2212X\/TaO2\u2212x bilayer structures","volume":"10","author":"Lee","year":"2011","journal-title":"Nat. Mater."},{"key":"ref_50","doi-asserted-by":"crossref","first-page":"1636","DOI":"10.1021\/nl900006g","article-title":"Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application","volume":"9","author":"Yang","year":"2009","journal-title":"Nano Lett."},{"key":"ref_51","doi-asserted-by":"crossref","first-page":"6741","DOI":"10.1002\/adfm.201401278","article-title":"Nanoscale resistive switching in amorphous perovskite oxide (a-SrTiO3) memristors","volume":"24","author":"Nili","year":"2014","journal-title":"Adv. Funct. Mater."},{"key":"ref_52","doi-asserted-by":"crossref","first-page":"033715","DOI":"10.1063\/1.2001146","article-title":"Resistive switching mechanism of Tio2 thin films grown by atomic-layer deposition","volume":"98","author":"Choi","year":"2005","journal-title":"J. Appl. Phys."},{"key":"ref_53","doi-asserted-by":"crossref","unstructured":"Wu, L., Liu, H., Lin, J., and Wang, S. (2020). Self-compliance and high performance PT\/HfOx\/Ti RRAM achieved through annealing. Nanomaterials, 10.","DOI":"10.3390\/nano10030457"},{"key":"ref_54","doi-asserted-by":"crossref","unstructured":"Chen, S., Chen, H., and Lai, Y. (2022). Reproducible non-volatile multi-state storage and emulation of synaptic plasticity based on a copper-nanoparticle-embedded HfOx\/zno bilayer with ultralow-switching current and ideal data retention. Nanomaterials, 12.","DOI":"10.3390\/nano12213769"},{"key":"ref_55","doi-asserted-by":"crossref","first-page":"10150","DOI":"10.1038\/srep10150","article-title":"Characterization and modeling of nonfilamentary Ta\/TaOx\/TiO2\/TI analog synaptic device","volume":"5","author":"Wang","year":"2015","journal-title":"Sci. Rep."},{"key":"ref_56","doi-asserted-by":"crossref","first-page":"29757","DOI":"10.1021\/acsami.8b09046","article-title":"Reliable multivalued conductance states in TaOx memristors through oxygen plasma-assisted electrode deposition with in situ-biased conductance state transmission electron microscopy analysis","volume":"10","author":"Lee","year":"2018","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_57","doi-asserted-by":"crossref","first-page":"1559","DOI":"10.1109\/LED.2016.2622716","article-title":"TiOx-Based RRAM Synapse With 64-Levels of Conductance and Symmetric Conductance Change by Adopting a Hybrid Pulse Scheme for Neuromorphic Computing","volume":"37","author":"Park","year":"2016","journal-title":"IEEE Electron Device Lett."},{"key":"ref_58","doi-asserted-by":"crossref","first-page":"254023","DOI":"10.1088\/0957-4484\/22\/25\/254023","article-title":"Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device","volume":"22","author":"Seo","year":"2011","journal-title":"Nanotechnology"},{"key":"ref_59","doi-asserted-by":"crossref","first-page":"110236","DOI":"10.1016\/j.chaos.2020.110236","article-title":"Artificial synaptic characteristics of TiO2\/HfO2 memristor with self-rectifying switching for brain-inspired computing","volume":"140","author":"Ryu","year":"2020","journal-title":"Chaos Solitons Fractals"},{"key":"ref_60","doi-asserted-by":"crossref","first-page":"2300035","DOI":"10.1002\/aisy.202300035","article-title":"An interface-type memristive device for Artificial Synapse and neuromorphic computing","volume":"5","author":"Kunwar","year":"2023","journal-title":"Adv. Intell. Syst."},{"key":"ref_61","doi-asserted-by":"crossref","first-page":"2107131","DOI":"10.1002\/adfm.202107131","article-title":"HfO2-based memristor as an artificial synapse for neuromorphic computing with tri-layer HfO2\/BiFeO3\/HfO2 design","volume":"31","author":"Peng","year":"2021","journal-title":"Adv. Funct. Mater."},{"key":"ref_62","doi-asserted-by":"crossref","unstructured":"Pyo, Y., Woo, J.-U., Hwang, H.-G., Nahm, S., and Jeong, J. (2021). Effect of oxygen vacancy on the conduction modulation linearity and classification accuracy of Pr0.7Ca0.3MnO3 memristor. Nanomaterials, 11.","DOI":"10.3390\/nano11102684"},{"key":"ref_63","doi-asserted-by":"crossref","first-page":"100392","DOI":"10.1016\/j.mtphys.2021.100392","article-title":"An electroforming-free, analog interface-type memristor based on a srfeox epitaxial heterojunction for neuromorphic computing","volume":"18","author":"Rao","year":"2021","journal-title":"Mater. Today Phys."},{"key":"ref_64","doi-asserted-by":"crossref","first-page":"33115","DOI":"10.1016\/j.ceramint.2022.07.246","article-title":"Synthesis and characterization of srfeox hetero-film resistance-switching device with low operation voltage","volume":"48","author":"Su","year":"2022","journal-title":"Ceram. Int."},{"key":"ref_65","doi-asserted-by":"crossref","first-page":"1188","DOI":"10.1038\/s41598-018-37986-6","article-title":"Confining vertical conducting filament for reliable resistive switching by using a AU-probe tip as the top electrode for epitaxial brownmillerite oxide memristive device","volume":"9","author":"Nallagatla","year":"2019","journal-title":"Sci. Rep."},{"key":"ref_66","doi-asserted-by":"crossref","first-page":"2106765","DOI":"10.1002\/adfm.202106765","article-title":"Noble-metal-assisted fast interfacial oxygen migration with topotactic phase transition in perovskite oxides","volume":"31","author":"Wang","year":"2021","journal-title":"Adv. Funct. Mater."},{"key":"ref_67","doi-asserted-by":"crossref","first-page":"6581","DOI":"10.1021\/acsami.8b18251","article-title":"Electric field control of phase transition and tunable resistive switching in SrFeO2","volume":"11","author":"Saleem","year":"2019","journal-title":"5. ACS Appl. Mater. Interfaces"},{"key":"ref_68","doi-asserted-by":"crossref","first-page":"163103","DOI":"10.1063\/1.5141154","article-title":"Topotactic transformation in SrFeO3\u2212\u03b4 triggered by low-dose Ga+ focused ion irradiation","volume":"116","author":"Bugallo","year":"2020","journal-title":"Appl. Phys. Lett."},{"key":"ref_69","doi-asserted-by":"crossref","first-page":"084710","DOI":"10.1063\/1.4893950","article-title":"Oxygen diffusion pathways in brownmillerite SrCoO2.5: Influence of structure and chemical potential","volume":"141","author":"Mitra","year":"2014","journal-title":"J. Chem. Phys."},{"key":"ref_70","doi-asserted-by":"crossref","first-page":"231602","DOI":"10.1063\/1.5096769","article-title":"Brownmillerite Phase Formation and evolution in epitaxial strontium ferrite heterostructures","volume":"114","author":"Wang","year":"2019","journal-title":"Appl. Phys. Lett."},{"key":"ref_71","doi-asserted-by":"crossref","first-page":"4831","DOI":"10.1021\/acsami.7b17377","article-title":"Directing oxygen vacancy channels in SrFeO2.5 epitaxial thin films","volume":"10","author":"Khare","year":"2018","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_72","doi-asserted-by":"crossref","first-page":"014403","DOI":"10.1103\/PhysRevMaterials.4.014403","article-title":"Orientation control of oxygen vacancy channels in brownmillerite SrFeO2.5","volume":"4","author":"Saleem","year":"2020","journal-title":"Phys. Rev. Mater."},{"key":"ref_73","doi-asserted-by":"crossref","first-page":"10502","DOI":"10.1039\/C7NR04011C","article-title":"Brownmillerite thin films as fast ion conductors for Ultimate-performance resistance switching memory","volume":"9","author":"Acharya","year":"2017","journal-title":"Nanoscale"},{"key":"ref_74","doi-asserted-by":"crossref","first-page":"074501","DOI":"10.1063\/5.0015902","article-title":"In situ observations of topotactic phase transitions in a ferrite memristor","volume":"128","author":"Kim","year":"2020","journal-title":"J. Appl. Phys."},{"key":"ref_75","doi-asserted-by":"crossref","first-page":"054111","DOI":"10.1103\/PhysRevB.88.054111","article-title":"Strain-controlled oxygen vacancy formation and ordering in CaMnO3","volume":"88","author":"Aschauer","year":"2013","journal-title":"Phys. Rev. B"},{"key":"ref_76","doi-asserted-by":"crossref","first-page":"18628","DOI":"10.1039\/D1CP02452C","article-title":"Mechanistic insight into oxygen vacancy migration in SrFeO3\u2212\u03b4 from DFT+U simulations","volume":"23","author":"Alaydrus","year":"2021","journal-title":"Phys. Chem. Chem. Phys."},{"key":"ref_77","doi-asserted-by":"crossref","first-page":"3200","DOI":"10.1039\/b418567f","article-title":"Mixed ionic\/electronic conductors Sr2Fe2O5 and Sr4Fe6O13: Atomic-scale studies of defects and Ion Migration","volume":"15","author":"Fisher","year":"2005","journal-title":"J. Mater. Chem."},{"key":"ref_78","doi-asserted-by":"crossref","first-page":"1757","DOI":"10.1021\/acs.jpclett.7b00355","article-title":"Low-dimensional oxygen vacancy ordering and diffusion in SrCrO3\u2212\u03b4","volume":"8","author":"Ong","year":"2017","journal-title":"J. Phys. Chem. Lett."},{"key":"ref_79","doi-asserted-by":"crossref","first-page":"35367","DOI":"10.1021\/acsami.8b12019","article-title":"Tuning oxygen vacancy diffusion through strain in SrTiO3 thin films","volume":"10","author":"Iglesias","year":"2018","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_80","doi-asserted-by":"crossref","first-page":"708","DOI":"10.1021\/acs.chemmater.6b04360","article-title":"Strain-enhanced oxygen dynamics and redox reversibility in topotactic SrCoO3-\u03b4 (0 <\u03b4 \u2264 0.5)","volume":"29","author":"Hu","year":"2017","journal-title":"Chem. Mater."},{"key":"ref_81","doi-asserted-by":"crossref","first-page":"1901984","DOI":"10.1002\/adfm.201901984","article-title":"Room-temperature AFM electric-field-induced topotactic transformation between perovskite and Brownmillerite SrFeOx with sub-micrometer spatial resolution","volume":"29","author":"Vasili","year":"2019","journal-title":"Adv. Funct. Mater."},{"key":"ref_82","doi-asserted-by":"crossref","first-page":"1564","DOI":"10.1002\/adfm.201504868","article-title":"Strain control of oxygen vacancies in epitaxial strontium cobaltite films","volume":"26","author":"Petrie","year":"2016","journal-title":"Adv. Funct. Mater."},{"key":"ref_83","doi-asserted-by":"crossref","first-page":"2729","DOI":"10.1021\/acsaelm.2c00244","article-title":"Manipulating the resistive switching in epitaxial SrCoO2.5 thin-film-based memristors by strain engineering","volume":"4","author":"Xiang","year":"2022","journal-title":"ACS Appl. Electron. Mater."},{"key":"ref_84","doi-asserted-by":"crossref","first-page":"035304","DOI":"10.1063\/5.0099200","article-title":"Tailoring resistive switching in epitaxial SrCoO2.5 films by irradiation induced uniaxial strain","volume":"132","author":"Xiang","year":"2022","journal-title":"J. Appl. Phys."},{"key":"ref_85","doi-asserted-by":"crossref","first-page":"16","DOI":"10.1038\/s41529-020-0120-3","article-title":"Time- and strain-dependent nanoscale structural degradation in phase change epitaxial strontium ferrite films","volume":"4","author":"Wang","year":"2020","journal-title":"npj Mater. Degrad."},{"key":"ref_86","doi-asserted-by":"crossref","first-page":"159666","DOI":"10.1016\/j.jallcom.2021.159666","article-title":"Thickness scaling effects of self-assembled NiO nanodots on resistive switching characteristics","volume":"872","author":"Ahn","year":"2021","journal-title":"J. Alloys Compd."},{"key":"ref_87","doi-asserted-by":"crossref","first-page":"2991","DOI":"10.1016\/j.ceramint.2022.09.283","article-title":"Resistive switching behaviours of PT\/Ni0.5Zn0.5Fe2O4\/Pt based on film thickness for memristor applications","volume":"49","author":"Zhang","year":"2023","journal-title":"Ceram. Int."},{"key":"ref_88","doi-asserted-by":"crossref","first-page":"4654","DOI":"10.1021\/acs.langmuir.7b00479","article-title":"The role of Ti buffer layer thickness on the resistive switching properties of hafnium oxide-based resistive switching memories","volume":"3","author":"Rahaman","year":"2017","journal-title":"Langmuir"},{"key":"ref_89","doi-asserted-by":"crossref","first-page":"150091","DOI":"10.1016\/j.apsusc.2021.150091","article-title":"Optimum resistive switching characteristics of NiFe2O4 by controlling film thickness","volume":"564","author":"Tong","year":"2021","journal-title":"Appl. Surf. Sci."},{"key":"ref_90","doi-asserted-by":"crossref","first-page":"41740","DOI":"10.1021\/acsami.0c10910","article-title":"Complementary resistive switching and synaptic-like memory behavior in an epitaxial SrFeO2.5 thin film through oriented oxygen-vacancy channels","volume":"12","author":"Nallagatla","year":"2020","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_91","doi-asserted-by":"crossref","first-page":"1900379","DOI":"10.1002\/adma.201900379","article-title":"A ferrite synaptic transistor with topotactic transformation","volume":"31","author":"Ge","year":"2019","journal-title":"Adv. Mater."},{"key":"ref_92","doi-asserted-by":"crossref","first-page":"156620","DOI":"10.1016\/j.apsusc.2023.156620","article-title":"Oxygen ion migration induced polarity switchable SrFeOx memristor for high-precision handwriting recognition","volume":"617","author":"Su","year":"2023","journal-title":"Appl. Surf. Sci."},{"key":"ref_93","first-page":"967","article-title":"Versatile SrFeOx for memristive neurons and synapses","volume":"8","author":"Chen","year":"2022","journal-title":"J. Mater."},{"key":"ref_94","doi-asserted-by":"crossref","first-page":"495","DOI":"10.1039\/C5MH00096C","article-title":"High activity and durability of novel perovskite electrocatalysts for water oxidation","volume":"2","author":"Zhou","year":"2015","journal-title":"Mater. Horiz."},{"key":"ref_95","doi-asserted-by":"crossref","first-page":"eabh0648","DOI":"10.1126\/sciadv.abh0648","article-title":"Analog memristive synapse based on topotactic phase transition for high-performance neuromorphic computing and neural network pruning","volume":"7","author":"Mou","year":"2021","journal-title":"Sci. Adv."},{"key":"ref_96","doi-asserted-by":"crossref","first-page":"143503","DOI":"10.1063\/5.0015151","article-title":"Resistive switching behavior in epitaxial brownmillerite SrFeO2.5\/Nb:SrTiO3 heterojunction","volume":"117","author":"Nallagatla","year":"2020","journal-title":"Appl. Phys. Lett."},{"key":"ref_97","doi-asserted-by":"crossref","first-page":"1901012","DOI":"10.1002\/aelm.201901012","article-title":"Designing High-Performance Storage in HfO2\/BiFeO3 Memristor for Artificial Synapse Applications","volume":"6","author":"Liu","year":"2020","journal-title":"Adv. Electron. Mater."},{"key":"ref_98","doi-asserted-by":"crossref","first-page":"5673","DOI":"10.1021\/acsami.1c24562","article-title":"Linear and symmetric Li-based composite memristors for efficient supervised learning","volume":"14","author":"Kim","year":"2022","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_99","doi-asserted-by":"crossref","first-page":"44561","DOI":"10.1021\/acsami.2c12296","article-title":"Filamentary and interface-type memristors based on tantalum oxide for energy-efficient neuromorphic hardware","volume":"14","author":"Kim","year":"2022","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_100","doi-asserted-by":"crossref","first-page":"305202","DOI":"10.1088\/1361-6528\/ab180f","article-title":"Microstructural engineering in Interface-type synapse device for enhancing linear and symmetric conductance changes","volume":"30","author":"Park","year":"2019","journal-title":"Nanotechnology"},{"key":"ref_101","doi-asserted-by":"crossref","unstructured":"Ryu, H., and Kim, S. (2020). Pseudo-interface switching of a two-terminal TaOx\/HfO2 synaptic device for neuromorphic applications. Nanomaterials, 10.","DOI":"10.3390\/nano10081550"},{"key":"ref_102","doi-asserted-by":"crossref","first-page":"147167","DOI":"10.1016\/j.apsusc.2020.147167","article-title":"Filamentary and interface switching of CMOS-compatible Ta2O5 memristor for non-volatile memory and synaptic devices","volume":"529","author":"Ryu","year":"2020","journal-title":"Appl. Surf. Sci."},{"key":"ref_103","doi-asserted-by":"crossref","first-page":"77","DOI":"10.1038\/s41427-020-00261-0","article-title":"Enhanced analog synaptic behavior of SiNx\/a-si bilayer memristors through GE Implantation","volume":"12","author":"Kim","year":"2020","journal-title":"NPG Asia Mater."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/23\/21\/8838\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,10]],"date-time":"2025-10-10T21:14:30Z","timestamp":1760130870000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/23\/21\/8838"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,10,30]]},"references-count":103,"journal-issue":{"issue":"21","published-online":{"date-parts":[[2023,11]]}},"alternative-id":["s23218838"],"URL":"https:\/\/doi.org\/10.3390\/s23218838","relation":{},"ISSN":["1424-8220"],"issn-type":[{"type":"electronic","value":"1424-8220"}],"subject":[],"published":{"date-parts":[[2023,10,30]]}}}