{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T02:38:39Z","timestamp":1760150319131,"version":"build-2065373602"},"reference-count":9,"publisher":"MDPI AG","issue":"22","license":[{"start":{"date-parts":[[2023,11,13]],"date-time":"2023-11-13T00:00:00Z","timestamp":1699833600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>An automotive 2.1 \u03bcm CMOS image sensor has been developed with a full-depth deep trench isolation and an advanced readout circuit technology. To achieve a high dynamic range, we employ a sub-pixel structure featuring a high conversion gain of a large photodiode and a lateral overflow of a small photodiode connected to an in-pixel storage capacitor. With the sensitivity ratio of 10, the expanded dynamic range could reach 120 dB at 85 \u00b0C by realizing a low random noise of 0.83 e- and a high overflow capacity of 210 ke-. An over 25 dB signal-to-noise ratio is achieved during HDR image synthesis by increasing the full-well capacity of the small photodiode up to 10,000 e- and suppressing the floating diffusion leakage current at 105 \u00b0C.<\/jats:p>","DOI":"10.3390\/s23229150","type":"journal-article","created":{"date-parts":[[2023,11,13]],"date-time":"2023-11-13T08:44:27Z","timestamp":1699865067000},"page":"9150","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":6,"title":["Automotive 2.1 \u03bcm Full-Depth Deep Trench Isolation CMOS Image Sensor with a 120 dB Single-Exposure Dynamic Range"],"prefix":"10.3390","volume":"23","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-2387-2066","authenticated-orcid":false,"given":"Dongsuk","family":"Yoo","sequence":"first","affiliation":[{"name":"Samsung Electronics Co., Ltd., Yongin-si 17113, Republic of Korea"}]},{"given":"Youngtae","family":"Jang","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd., Yongin-si 17113, Republic of Korea"}]},{"given":"Youngchan","family":"Kim","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd., Yongin-si 17113, Republic of Korea"}]},{"given":"Jihun","family":"Shin","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd., Yongin-si 17113, Republic of Korea"}]},{"given":"Kangsun","family":"Lee","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd., Yongin-si 17113, Republic of Korea"}]},{"given":"Seok-Yong","family":"Park","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd., Yongin-si 17113, Republic of Korea"}]},{"given":"Seungho","family":"Shin","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd., Yongin-si 17113, Republic of Korea"}]},{"given":"Hongsuk","family":"Lee","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd., Yongin-si 17113, Republic of Korea"}]},{"given":"Seojoo","family":"Kim","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd., Yongin-si 17113, Republic of Korea"}]},{"given":"Joongseok","family":"Park","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd., Yongin-si 17113, Republic of Korea"}]},{"given":"Cheonho","family":"Park","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd., Yongin-si 17113, Republic of Korea"}]},{"given":"Moosup","family":"Lim","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd., Yongin-si 17113, Republic of Korea"}]},{"given":"Hyungjin","family":"Bae","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd., Yongin-si 17113, Republic of Korea"}]},{"given":"Soeun","family":"Park","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd., Yongin-si 17113, Republic of Korea"}]},{"given":"Minwook","family":"Jung","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd., Yongin-si 17113, Republic of Korea"}]},{"given":"Sungkwan","family":"Kim","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd., Yongin-si 17113, Republic of Korea"}]},{"given":"Shinyeol","family":"Choi","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd., Yongin-si 17113, Republic of Korea"}]},{"given":"Sejun","family":"Kim","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd., Yongin-si 17113, Republic of Korea"}]},{"given":"Jinkyeong","family":"Heo","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd., Yongin-si 17113, Republic of Korea"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9072-5640","authenticated-orcid":false,"given":"Hojoon","family":"Lee","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd., Yongin-si 17113, Republic of Korea"}]},{"given":"KyungChoon","family":"Lee","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd., Yongin-si 17113, Republic of Korea"}]},{"given":"Youngkyun","family":"Jeong","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd., Yongin-si 17113, Republic of Korea"}]},{"given":"Youngsun","family":"Oh","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd., Yongin-si 17113, Republic of Korea"}]},{"given":"Min-Sun","family":"Keel","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd., Yongin-si 17113, Republic of Korea"}]},{"given":"Bumsuk","family":"Kim","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd., Yongin-si 17113, Republic of Korea"}]},{"given":"Haechang","family":"Lee","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd., Yongin-si 17113, Republic of Korea"}]},{"given":"JungChak","family":"Ahn","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd., Yongin-si 17113, Republic of Korea"}]}],"member":"1968","published-online":{"date-parts":[[2023,11,13]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"2815","DOI":"10.1109\/TED.2022.3164370","article-title":"HDR CMOS Image Sensors for Automotive Applications","volume":"69","author":"Takayanagi","year":"2022","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_2","unstructured":"Solhusvik, J., Kuang, J., Lin, Z., Manabe, S., Lyu, J.H., and Rhodes, H. (2013). A comparison of high dynamic range CIS technologies for automotive applications. Proc. Int. Image Sensor Workshop (IISW), 421\u2013424."},{"key":"ref_3","doi-asserted-by":"crossref","unstructured":"Sugawa, S., Akahane, N., Adachi, S., Mori, K., Ishiuchi, T., and Mizobuchi, K. (2005, January 10). A 100 dB dynamic range CMOS image sensor using a lateral overflow integration capacitor. Proceedings of the ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, San Francisco, CA, USA.","DOI":"10.1109\/JSSC.2006.870753"},{"key":"ref_4","unstructured":"Oh, M., Nicholes, S., Suryadevara, M., Lin, L., Chang, H.C., Tekleab, D., Guidash, M., Amanullah, S., Velichko, S., and Innocent, M. (2019). 3.0 um Backside Illuminated, Lateral Overflow, High Dynamic Range, LED Flicker Mitigation Image Sensor. Proc. Int. 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