{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,20]],"date-time":"2026-06-20T22:34:07Z","timestamp":1781994847647,"version":"3.54.5"},"reference-count":38,"publisher":"MDPI AG","issue":"24","license":[{"start":{"date-parts":[[2023,12,6]],"date-time":"2023-12-06T00:00:00Z","timestamp":1701820800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>In this paper, we propose a temperature sensor based on a 4H-SiC CMOS oscillator circuit and that is able to operate in the temperature range between 298 K and 573 K. The circuit is developed on Fraunhofer IISB\u2019s 2 \u03bcm 4H-SiC CMOS technology and is designed for a bias voltage of 20 V and an oscillation frequency of 90 kHz at room temperature. The possibility to relate the absolute temperature with the oscillation frequency is due to the temperature dependency of the threshold voltage and of the channel mobility of the transistors. An analytical model of the frequency-temperature dependency has been developed and is used as a starting point for the design of the circuit. Once the circuit has been designed, numerical simulations are performed with the Verilog-A BSIM4SiC model, which has been opportunely tuned on Fraunhofer IISB\u2019s 2 \u03bcm 4H-SiC CMOS technology, and their results showed almost linear frequency-temperature characteristics with a coefficient of determination that was higher than 0.9681 for all of the bias conditions, whose maximum is 0.9992 at a VDD = 12.5 V. Moreover, we considered the effects of the fabrication process through a Monte Carlo analysis, where we varied the threshold voltage and the channel mobility with different values of the Gaussian distribution variance. For example, at VDD = 20 V, a deviation of 17.4% from the nominal characteristic is obtained for a Gaussian distribution variance of 20%. Finally, we applied the one-point calibration procedure, and temperature errors of +8.8 K and \u22125.8 K were observed at VDD = 15 V.<\/jats:p>","DOI":"10.3390\/s23249653","type":"journal-article","created":{"date-parts":[[2023,12,6]],"date-time":"2023-12-06T08:48:32Z","timestamp":1701852512000},"page":"9653","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":11,"title":["A 4H-SiC CMOS Oscillator-Based Temperature Sensor Operating from 298 K up to 573 K"],"prefix":"10.3390","volume":"23","author":[{"ORCID":"https:\/\/orcid.org\/0009-0003-5223-5530","authenticated-orcid":false,"given":"Nicola","family":"Rinaldi","sequence":"first","affiliation":[{"name":"Department of Industrial Engineering, University of Salerno, Via Giovanni Paolo II, 132, 84084 Fisciano, SA, Italy"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0093-1169","authenticated-orcid":false,"given":"Rosalba","family":"Liguori","sequence":"additional","affiliation":[{"name":"Department of Industrial Engineering, University of Salerno, Via Giovanni Paolo II, 132, 84084 Fisciano, SA, Italy"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8714-5840","authenticated-orcid":false,"given":"Alexander","family":"May","sequence":"additional","affiliation":[{"name":"Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Schottkystra\u00dfe 10, 91058 Erlangen, Germany"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6976-7486","authenticated-orcid":false,"given":"Chiara","family":"Rossi","sequence":"additional","affiliation":[{"name":"Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Schottkystra\u00dfe 10, 91058 Erlangen, Germany"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1141-3228","authenticated-orcid":false,"given":"Mathias","family":"Rommel","sequence":"additional","affiliation":[{"name":"Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Schottkystra\u00dfe 10, 91058 Erlangen, Germany"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5690-9040","authenticated-orcid":false,"given":"Alfredo","family":"Rubino","sequence":"additional","affiliation":[{"name":"Department of Industrial Engineering, University of Salerno, Via Giovanni Paolo II, 132, 84084 Fisciano, SA, Italy"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1913-4928","authenticated-orcid":false,"given":"Gian Domenico","family":"Licciardo","sequence":"additional","affiliation":[{"name":"Department of Industrial Engineering, University of Salerno, Via Giovanni Paolo II, 132, 84084 Fisciano, SA, Italy"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5588-0621","authenticated-orcid":false,"given":"Luigi","family":"Di Benedetto","sequence":"additional","affiliation":[{"name":"Department of Industrial Engineering, University of Salerno, Via Giovanni Paolo II, 132, 84084 Fisciano, SA, Italy"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2023,12,6]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Kimoto, T., and Cooper, J.A. (2014). Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications, John Wiley & Sons Singapore Pte. Ltd.","DOI":"10.1002\/9781118313534"},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"073504","DOI":"10.1063\/1.4865372","article-title":"Temperature sensor based on 4H-silicon carbide pn diode operational from 20 \u00b0C to 600 \u00b0C","volume":"104","author":"Zhang","year":"2014","journal-title":"Appl. Phys. Lett."},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"2871","DOI":"10.1109\/JSEN.2019.2891293","article-title":"Feasibility of 4H-SiC pin diode for sensitive temperature measurements between 20.5 K and 802 K","volume":"19","author":"Matthus","year":"2019","journal-title":"IEEE Sens. J."},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"191","DOI":"10.1109\/JEDS.2018.2889638","article-title":"A SiC BJT-based negative resistance oscillator for high-temperature applications","volume":"7","author":"Hussain","year":"2019","journal-title":"IEEE J. Electron Devices Soc."},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"146","DOI":"10.1109\/LED.2015.2508064","article-title":"Wide temperature range integrated bandgap voltage references in 4H\u2013SiC","volume":"37","author":"Hedayati","year":"2015","journal-title":"IEEE Electron Device Lett."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"693","DOI":"10.1109\/LED.2014.2322335","article-title":"A monolithic, 500 C operational amplifier in 4H-SiC bipolar technology","volume":"35","author":"Hedayati","year":"2014","journal-title":"IEEE Electron Device Lett."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"910","DOI":"10.4028\/www.scientific.net\/MSF.821-823.910","article-title":"ECL-based SiC logic circuits for extreme temperatures","volume":"821\u2013823","author":"Lanni","year":"2015","journal-title":"Mater. Sci. Forum."},{"key":"ref_8","doi-asserted-by":"crossref","unstructured":"Rahman, A., Shepherd, P.D., Bhuyan, S.A., Ahmed, S., Akula, S.K., Caley, L., Mantooth, H.A., Di, J., Francis, A.M., and Holmes, J.A. (2015, January 7\u201314). A family of CMOS analog and mixed signal circuits in SiC for high temperature electronics. Proceedings of the 2015 IEEE Aerospace Conference, Big Sky, MT, USA.","DOI":"10.1109\/AERO.2015.7119302"},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"2455","DOI":"10.1109\/TED.2016.2550580","article-title":"High-temperature voltage and current references in silicon carbide CMOS","volume":"63","author":"Rahman","year":"2016","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_10","unstructured":"(2023, September 30). Fraunhofer Institute for Integrated Systems and Device Technology (IISB). Available online: https:\/\/www.iisb.fraunhofer.de\/."},{"key":"ref_11","doi-asserted-by":"crossref","unstructured":"Romijn, J., Middelburg, L.M., Vollebregt, S., El Mansouri, B., van Zeijl, H.W., May, A., Erlbacher, T., Zhang, G., and Sarro, P.M. (November, January 31). Resistive and CTAT temperature sensors in a silicon carbide CMOS technology. Proceedings of the 2021 IEEE Sensors, Sydney, Australia.","DOI":"10.1109\/SENSORS47087.2021.9639845"},{"key":"ref_12","first-page":"154","article-title":"A 4H-SiC UV phototransistor with excellent optical gain based on controlled potential barrier","volume":"67","author":"Licciardo","year":"2019","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"995","DOI":"10.1109\/LED.2023.3268334","article-title":"A Highly Linear Temperature Sensor Operating up to 600 \u00b0C in a 4H-SiC CMOS Technology","volume":"44","author":"Mo","year":"2023","journal-title":"IEEE Electron Device Lett."},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"687","DOI":"10.1109\/TED.2017.2785234","article-title":"V2O5\/4H-SiC Schottky diode temperature sensor: Experiments and model","volume":"65","author":"Licciardo","year":"2018","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_15","doi-asserted-by":"crossref","unstructured":"Toli\u0107, I.P., Mikuli\u0107, J., Schatzberger, G., and Bari\u0107, A. (October, January 28). Design of CMOS temperature sensors based on ring oscillators in 180-nm and 110-nm technology. Proceedings of the 2020 43rd International Convention on Information, Communication and Electronic Technology (MIPRO), Opatija, Croatia.","DOI":"10.23919\/MIPRO48935.2020.9245244"},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"1590","DOI":"10.1109\/TVLSI.2011.2161783","article-title":"Time-domain CMOS temperature sensors with dual delay-locked loops for microprocessor thermal monitoring","volume":"20","author":"Ha","year":"2011","journal-title":"IEEE Trans. Very Large Scale Integr. (VLSI) Syst."},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"197","DOI":"10.1049\/ip-g-1.1984.0037","article-title":"CMOS Schmitt triggers","volume":"Volume 131","author":"Dokic","year":"1984","journal-title":"Proceedings of the IEE Proceedings G. Electronic Circuits and Systems"},{"key":"ref_18","unstructured":"Jorgensen, J.M. (1976). CMOS Schmitt Trigger. (3,984,703), U.S. Patent."},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"46","DOI":"10.1109\/81.260219","article-title":"CMOS Schmitt trigger design","volume":"41","author":"Filanovsky","year":"1994","journal-title":"IEEE Trans. Circuits Syst. I Fundam. Theory Appl."},{"key":"ref_20","unstructured":"Rabaey, J.M., Chandrakasan, A.P., and Nikolic, B. (2002). Digital Integrated Circuits, Prentice Hall."},{"key":"ref_21","unstructured":"(2023, September 30). Cadence Design Systems. Cadence Virtuoso. Available online: https:\/\/www.cadence.com\/en_US\/home.html."},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"1574","DOI":"10.1109\/JESTPE.2019.2925955","article-title":"DC modeling and geometry scaling of SiC low-voltage MOSFETs for integrated circuit design","volume":"7","author":"Ahmed","year":"2019","journal-title":"IEEE J. Emerg. Sel. Top. Power Electron."},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"1923","DOI":"10.1109\/TED.2013.2258287","article-title":"Characterization and modeling of 4H-SiC lateral MOSFETs for integrated circuit design","volume":"60","author":"Mudholkar","year":"2013","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_24","doi-asserted-by":"crossref","unstructured":"Arora, N. (2007). Mosfet Modeling for VLSI Simulation: Theory and Practice, World Scientific.","DOI":"10.1142\/6157"},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"2478","DOI":"10.1109\/TCOMM.2011.061511.100749","article-title":"Analytic method for the computation of the total harmonic distortion by the Cauchy method of residues","volume":"59","author":"Blagouchine","year":"2011","journal-title":"IEEE Trans. Commun."},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"391","DOI":"10.1149\/05003.0391ecst","article-title":"Al+ implanted anode for 4H-SiC pin diodes","volume":"50","author":"Nipoti","year":"2013","journal-title":"ECS Trans."},{"key":"ref_27","doi-asserted-by":"crossref","first-page":"185","DOI":"10.4028\/p-36s1w4","article-title":"Via size-dependent properties of TiAl ohmic contacts on 4H-SiC","volume":"1062","author":"May","year":"2022","journal-title":"Mater. Sci. Forum"},{"key":"ref_28","doi-asserted-by":"crossref","first-page":"2992","DOI":"10.1109\/JSSC.2006.884865","article-title":"A CMOS Temperature-to-Frequency Converter with an Inaccuracy of Less than 0.5 \u00b0C (3\u03c3) from \u221240 \u00b0C to 105 \u00b0C","volume":"41","author":"Makinwa","year":"2006","journal-title":"IEee J. Solid-State Circuits"},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"2651","DOI":"10.1109\/JSSC.2016.2598765","article-title":"A VCO based highly digital temperature sensor with 0.034 \u00b0C\/mV supply sensitivity","volume":"51","author":"Anand","year":"2016","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_30","doi-asserted-by":"crossref","first-page":"2241","DOI":"10.1109\/TCSI.2013.2246254","article-title":"A 0.008 mm2 500 \u03bcW 469 kS\/s Frequency-to-Digital Converter Based CMOS Temperature Sensor with Process Variation Compensation","volume":"60","author":"Hwang","year":"2013","journal-title":"IEEE Trans. Circuits Syst. I Regul. Pap."},{"key":"ref_31","doi-asserted-by":"crossref","first-page":"14","DOI":"10.1109\/LSSC.2018.2797427","article-title":"A 225 \u03bcm2 Probe Single-Point Calibration Digital Temperature Sensor Using Body-Bias Adjustment in 28 nm FD-SOI CMOS","volume":"1","author":"Cochet","year":"2018","journal-title":"IEEE-Solid-State Circuits Lett."},{"key":"ref_32","first-page":"568","article-title":"An on-chip temperature sensor with a self-discharging diode in 32-nm SOI CMOS","volume":"59","author":"Chowdhury","year":"2012","journal-title":"IEEE Trans. Circuits Syst. II Express Briefs"},{"key":"ref_33","doi-asserted-by":"crossref","first-page":"583","DOI":"10.1016\/S0026-2714(02)00027-6","article-title":"A review of recent MOSFET threshold voltage extraction methods","volume":"42","author":"Liou","year":"2002","journal-title":"Microelectron. Reliab."},{"key":"ref_34","doi-asserted-by":"crossref","first-page":"2562","DOI":"10.1109\/TED.2015.2447216","article-title":"Comprehensive study of the electron scattering mechanisms in 4H-SiC MOSFETs","volume":"62","author":"Uhnevionak","year":"2015","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_35","doi-asserted-by":"crossref","first-page":"075011","DOI":"10.1088\/0268-1242\/24\/7\/075011","article-title":"Channel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperatures","volume":"24","author":"Rumyantsev","year":"2009","journal-title":"Semicond. Sci. Technol."},{"key":"ref_36","doi-asserted-by":"crossref","first-page":"1346","DOI":"10.1016\/j.microrel.2011.03.015","article-title":"Investigation of the reliability of 4H\u2013SiC MOS devices for high temperature applications","volume":"51","author":"Schmitt","year":"2011","journal-title":"Microelectron. Reliab."},{"key":"ref_37","first-page":"244","article-title":"On the crossing-point of 4H-SiC power diodes characteristics","volume":"35","author":"Licciardo","year":"2013","journal-title":"IEEE Electron Device Lett."},{"key":"ref_38","doi-asserted-by":"crossref","first-page":"233","DOI":"10.1016\/S0038-1101(02)00200-9","article-title":"On the temperature coefficient of 4H-SiC BJT current gain","volume":"47","author":"Li","year":"2003","journal-title":"Solid-State Electron."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/23\/24\/9653\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,10]],"date-time":"2025-10-10T21:34:08Z","timestamp":1760132048000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/23\/24\/9653"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,12,6]]},"references-count":38,"journal-issue":{"issue":"24","published-online":{"date-parts":[[2023,12]]}},"alternative-id":["s23249653"],"URL":"https:\/\/doi.org\/10.3390\/s23249653","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2023,12,6]]}}}