{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,26]],"date-time":"2026-02-26T20:12:42Z","timestamp":1772136762522,"version":"3.50.1"},"reference-count":45,"publisher":"MDPI AG","issue":"3","license":[{"start":{"date-parts":[[2024,1,25]],"date-time":"2024-01-25T00:00:00Z","timestamp":1706140800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"National Natural Science Foundation of China","award":["12073009"],"award-info":[{"award-number":["12073009"]}]},{"name":"National Natural Science Foundation of China","award":["61974055"],"award-info":[{"award-number":["61974055"]}]},{"name":"National Natural Science Foundation of China","award":["U21B2061"],"award-info":[{"award-number":["U21B2061"]}]},{"name":"National Natural Science Foundation of China","award":["12374397"],"award-info":[{"award-number":["12374397"]}]},{"name":"National Natural Science Foundation of China","award":["20210301010GX"],"award-info":[{"award-number":["20210301010GX"]}]},{"name":"Project of Science and Technology Plan of Jilin Province","award":["12073009"],"award-info":[{"award-number":["12073009"]}]},{"name":"Project of Science and Technology Plan of Jilin Province","award":["61974055"],"award-info":[{"award-number":["61974055"]}]},{"name":"Project of Science and Technology Plan of Jilin Province","award":["U21B2061"],"award-info":[{"award-number":["U21B2061"]}]},{"name":"Project of Science and Technology Plan of Jilin Province","award":["12374397"],"award-info":[{"award-number":["12374397"]}]},{"name":"Project of Science and Technology Plan of Jilin Province","award":["20210301010GX"],"award-info":[{"award-number":["20210301010GX"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>\u03b2-Ga2O3 photodetectors have the advantages of low dark current and strong radiation resistance in UV detection. However, the limited photocurrent has restricted their applications. Herein, MSM UV photodetectors based on (InxGa1\u2212x)2O3 (x = 0, 0.1, 0.2, 0.3) by a sol-gel method were fabricated and studied. The doping of indium ions in Ga2O3 leads to lattice distortion and promotes the formation of oxygen vacancies. The oxygen vacancies in (InxGa1\u2212x)2O3 can be modulated by various proportions of indium, and the increased oxygen vacancies contribute to the enhancement of electron concentration. The results show that the amorphous In0.4Ga1.6O3 photodetector exhibited improved performances, including a high light-to-dark current ratio (2.8 \u00d7 103) and high responsivity (739.2 A\/W). This work provides a promising semiconductor material In0.4Ga1.6O3 for high-performance MSM UV photodetectors.<\/jats:p>","DOI":"10.3390\/s24030787","type":"journal-article","created":{"date-parts":[[2024,1,25]],"date-time":"2024-01-25T08:44:07Z","timestamp":1706172247000},"page":"787","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":13,"title":["Sol-Gel Synthesized Amorphous (InxGa1\u2212x)2O3 for UV Photodetection with High Responsivity"],"prefix":"10.3390","volume":"24","author":[{"ORCID":"https:\/\/orcid.org\/0009-0004-4603-2670","authenticated-orcid":false,"given":"Yupeng","family":"Zhang","sequence":"first","affiliation":[{"name":"College of Electronic Science & Engineering, Jilin University, Changchun 130012, China"}]},{"given":"Ruiheng","family":"Zhou","sequence":"additional","affiliation":[{"name":"College of Electronic Science & Engineering, Jilin University, Changchun 130012, China"}]},{"given":"Xinyan","family":"Liu","sequence":"additional","affiliation":[{"name":"College of Electronic Science & Engineering, Jilin University, Changchun 130012, China"}]},{"given":"Zhengyu","family":"Bi","sequence":"additional","affiliation":[{"name":"College of Electronic Science & Engineering, Jilin University, Changchun 130012, China"}]},{"given":"Shengping","family":"Ruan","sequence":"additional","affiliation":[{"name":"College of Electronic Science & Engineering, Jilin University, Changchun 130012, China"}]},{"given":"Yan","family":"Ma","sequence":"additional","affiliation":[{"name":"College of Electronic Science & Engineering, Jilin University, Changchun 130012, China"}]},{"given":"Xin","family":"Li","sequence":"additional","affiliation":[{"name":"College of Electronic Science & Engineering, Jilin University, Changchun 130012, China"}]},{"given":"Caixia","family":"Liu","sequence":"additional","affiliation":[{"name":"College of Electronic Science & Engineering, Jilin University, Changchun 130012, China"}]},{"given":"Yu","family":"Chen","sequence":"additional","affiliation":[{"name":"Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"}]},{"given":"Jingran","family":"Zhou","sequence":"additional","affiliation":[{"name":"College of Electronic Science & Engineering, Jilin University, Changchun 130012, China"}]}],"member":"1968","published-online":{"date-parts":[[2024,1,25]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"011301","DOI":"10.1063\/1.5006941","article-title":"A review of Ga2O3 materials, processing, and devices","volume":"5","author":"Pearton","year":"2018","journal-title":"Appl. Phys. Rev."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"100643","DOI":"10.1016\/j.mtphys.2022.100643","article-title":"A general strategy to ultrasensitive Ga2O3 based self-powered solar-blind photodetectors","volume":"23","author":"Wu","year":"2022","journal-title":"Mater. Today Phys."},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"359","DOI":"10.1016\/j.jallcom.2016.01.169","article-title":"Ultraviolet photodetector based on sol-gel synthesized MgZnO nanoparticle with photoconductive gain","volume":"667","author":"Yu","year":"2016","journal-title":"J. Alloys Compd."},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"1852","DOI":"10.1039\/D0TC04182C","article-title":"Ultrawide-bandgap semiconductor AlN crystals: Growth and applications","volume":"9","author":"Yu","year":"2021","journal-title":"J. Mater. Chem. C"},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"2276","DOI":"10.1109\/TED.2019.2906906","article-title":"Carrier Transport and Gain Mechanisms in beta-Ga2O3-Based Metal-Semiconductor-Metal Solar-Blind Schottky Photodetectors","volume":"66","author":"Xu","year":"2019","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"601","DOI":"10.1016\/j.jallcom.2018.06.313","article-title":"Growth and characterization of \u03b2-Ga2O3 thin films by sol-gel method for fast-response solar-blind ultraviolet photodetectors","volume":"766","author":"Shen","year":"2018","journal-title":"J. Alloys Compd."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"483","DOI":"10.1007\/s13391-017-7072-y","article-title":"Decrease of oxygen vacancy by Zn-doped for improving solar-blind photoelectric performance in beta-Ga2O3 thin films","volume":"13","author":"Guo","year":"2017","journal-title":"Electron. Mater. Lett."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"351","DOI":"10.1021\/acsphotonics.8b00769","article-title":"Flexible X-ray Detectors Based on Amorphous Ga2O3 Thin Films","volume":"6","author":"Liang","year":"2019","journal-title":"ACS Photonics"},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"1702177","DOI":"10.1002\/smll.201702177","article-title":"ZnO Film UV Photodetector with Enhanced Performance: Heterojunction with CdMoO4 Microplates and the Hot Electron Injection Effect of Au Nanoparticles","volume":"13","author":"Ouyang","year":"2017","journal-title":"Small"},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"1700156","DOI":"10.1002\/smll.201700156","article-title":"Novel Structure for High Performance UV Photodetector Based on BiOCl\/ZnO Hybrid Film","volume":"13","author":"Teng","year":"2017","journal-title":"Small"},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"671","DOI":"10.1007\/s11082-021-03323-x","article-title":"The effect of structural parameters on AlGaN solar-blind metal-semiconductor-metal (MSM) photodetectors","volume":"53","author":"Wang","year":"2021","journal-title":"Opt. Quantum Electron."},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"1311","DOI":"10.1016\/j.cap.2011.03.065","article-title":"Thermal annealing effects on the dynamic photoresponse properties of Al-doped ZnO nanowires network","volume":"11","author":"Kim","year":"2011","journal-title":"Curr. Appl. Phys."},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"254","DOI":"10.1016\/j.matlet.2017.12.019","article-title":"High-sensitivity UV photodetector based on oblique and vertical Co-doped ZnO nanorods","volume":"214","author":"Shabannia","year":"2018","journal-title":"Mater. Lett."},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"1368","DOI":"10.1166\/jno.2019.2549","article-title":"High UV-to-Visible Rejection Ratio and Low Cost UV Photodetector Based on Co-Doped ZnO Nanorods Grown on Polyethylene Terephthalate Substrate","volume":"14","author":"Shabannia","year":"2019","journal-title":"J. Nanoelectron. Optoelectron."},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"363","DOI":"10.1016\/j.sna.2017.11.044","article-title":"Low-frequency noise properties of MgZnO nanorod ultraviolet photodetectors with and without UV illumination","volume":"269","author":"Young","year":"2018","journal-title":"Sens. Actuators A Phys."},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"6311","DOI":"10.1039\/C4RA13205J","article-title":"ZnO homojunction UV photodetector based on solution-grown Sb-doped p-type ZnO nanorods and pure n-type ZnO nanorods","volume":"5","author":"Dai","year":"2014","journal-title":"RSC Adv."},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"113242","DOI":"10.1016\/j.sna.2021.113242","article-title":"Highly sensitive ultraviolet photodetectors fabricated from rare earth metal ions doped NiO thin films via nebulizer spray pyrolysis method","volume":"333","author":"Raj","year":"2021","journal-title":"Sens. Actuators A Phys."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"112148","DOI":"10.1016\/j.materresbull.2023.112148","article-title":"Enhanced sensitivity from Ag micro-flakes encapsulated Ag-doped ZnO nanorods-based UV photodetector","volume":"161","author":"Rajamanickam","year":"2023","journal-title":"Mater. Res. Bull."},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"110350","DOI":"10.1016\/j.jpcs.2021.110350","article-title":"Superior UV photodetector performance of TiO2 films using Nb doping","volume":"160","author":"Yadav","year":"2021","journal-title":"J. Phys. Chem. Solids"},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"126966","DOI":"10.1016\/j.matchemphys.2022.126966","article-title":"Ytterbium doping reduces the dark current of UV photoelectric detector based on TiO2","volume":"293","author":"Zhang","year":"2023","journal-title":"Mater. Chem. Phys."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"2807","DOI":"10.1021\/acsami.0c16021","article-title":"Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors","volume":"13","author":"Swallow","year":"2021","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"020906","DOI":"10.1063\/1.5142999","article-title":"Recent progress on the electronic structure, defect, and doping properties of Ga2O3","volume":"8","author":"Zhang","year":"2020","journal-title":"APL Mater."},{"key":"ref_23","doi-asserted-by":"crossref","unstructured":"Chang, S.-P., Chang, L.-Y., and Li, J.-Y. (2016). The Influence of Different Partial Pressure on the Fabrication of InGaO Ultraviolet Photodetectors. Sensors, 16.","DOI":"10.3390\/s16122145"},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"1741","DOI":"10.1002\/pssa.200983712","article-title":"Sol-gel prepared (Ga1\u2212xInx)2O3 thin films for solar-blind ultraviolet photodetectors","volume":"207","author":"Kokubun","year":"2010","journal-title":"Phys. Status Solidi A-Appl. Mater. Sci."},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"1817","DOI":"10.1109\/TED.2018.2817637","article-title":"The Effect of Oxygen Vacancy Concentration on Indium Gallium Oxide Solar Blind Photodetector","volume":"65","author":"Chen","year":"2018","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"454001","DOI":"10.1088\/1361-6463\/aba313","article-title":"Tuning the responsivity of monoclinic (InxGa1\u2212x)2O3 solar-blind photodetectors grown by metal organic chemical vapor deposition","volume":"53","author":"Hatipoglu","year":"2020","journal-title":"J. Phys. D Appl. Phys."},{"key":"ref_27","doi-asserted-by":"crossref","first-page":"12","DOI":"10.1016\/j.jcrysgro.2012.04.006","article-title":"Crystal orientation of beta-Ga2O3 thin films formed on c-plane and a-plane sapphire substrate","volume":"349","author":"Nakagomi","year":"2012","journal-title":"J. Cryst. Growth"},{"key":"ref_28","doi-asserted-by":"crossref","first-page":"2205623","DOI":"10.1002\/smll.202205623","article-title":"Ultrathin In2O3 Nanosheets toward High Responsivity and Rejection Ratio Visible-Blind UV Photodetection","volume":"19","author":"Zhang","year":"2023","journal-title":"Small"},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"125001","DOI":"10.1103\/PhysRevMaterials.4.125001","article-title":"Investigating the ranges of (meta)stable phase formation in (InxGa1\u2212x)2O3: Impact of the cation coordination","volume":"4","author":"Wouters","year":"2020","journal-title":"Phys. Rev. Mater."},{"key":"ref_30","doi-asserted-by":"crossref","first-page":"15","DOI":"10.1109\/LPT.2018.2880764","article-title":"Stacked Triple Ultraviolet-Band Metal-Semiconductor-Metal Photodetectors","volume":"31","author":"Lee","year":"2019","journal-title":"IEEE Photonics Technol. Lett."},{"key":"ref_31","doi-asserted-by":"crossref","first-page":"085206","DOI":"10.1103\/PhysRevB.92.085206","article-title":"(InxGa1\u2212x)2O3 alloys for transparent electronics","volume":"92","author":"Peelaers","year":"2015","journal-title":"Phys. Rev. B"},{"key":"ref_32","doi-asserted-by":"crossref","first-page":"H55","DOI":"10.1149\/1.2822885","article-title":"Effect of N2O plasma treatment on the performance of ZnO TFTs","volume":"11","author":"Remashan","year":"2008","journal-title":"Electrochem. Solid-State Lett."},{"key":"ref_33","doi-asserted-by":"crossref","first-page":"6296","DOI":"10.1039\/C8CS00255J","article-title":"2D library beyond graphene and transition metal dichalcogenides: A focus on photodetection","volume":"47","author":"Wang","year":"2018","journal-title":"Chem. Soc. Rev."},{"key":"ref_34","doi-asserted-by":"crossref","first-page":"101102","DOI":"10.1063\/1.5120578","article-title":"Epitaxial stabilization of single phase \u03ba-(InxGa1\u2212x)2O3 thin films up to x = 0.28 on c-sapphire and \u03ba-Ga2O3(001) templates by tin-assisted VCCS-PLD","volume":"7","author":"Kneiss","year":"2019","journal-title":"APL Mater."},{"key":"ref_35","doi-asserted-by":"crossref","first-page":"710","DOI":"10.1021\/acscombsci.5b00084","article-title":"Properties of Schottky Barrier Diodes on (InxGa1\u2212x)2O3 for 0.01 \u2264 x \u2264 0.85 Determined by a Combinatorial Approach","volume":"17","author":"Splith","year":"2015","journal-title":"ACS Comb. Sci."},{"key":"ref_36","doi-asserted-by":"crossref","first-page":"107973","DOI":"10.1016\/j.mssp.2023.107973","article-title":"MSM UV photodetector with low dark current based on GaInO\/SrTiO3 heterojunction","volume":"170","author":"Bi","year":"2024","journal-title":"Mater. Sci. Semicond. Process."},{"key":"ref_37","doi-asserted-by":"crossref","first-page":"132106","DOI":"10.1063\/1.4755770","article-title":"Schottky barrier height of Au on the transparent semiconducting oxide \u03b2-Ga2O3","volume":"101","author":"Mohamed","year":"2012","journal-title":"Appl. Phys. Lett."},{"key":"ref_38","doi-asserted-by":"crossref","first-page":"022108","DOI":"10.1063\/1.3464964","article-title":"O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors","volume":"97","author":"Ryu","year":"2010","journal-title":"Appl. Phys. Lett."},{"key":"ref_39","doi-asserted-by":"crossref","first-page":"023507","DOI":"10.1063\/1.4890524","article-title":"Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in \u03b2-Ga2O3 solar-blind ultraviolet photodetectors","volume":"105","author":"Guo","year":"2014","journal-title":"Appl. Phys. Lett."},{"key":"ref_40","doi-asserted-by":"crossref","first-page":"3453","DOI":"10.1021\/nl9016557","article-title":"Giant Persistent Photoconductivity in Rough Silicon Nanomembranes","volume":"9","author":"Feng","year":"2009","journal-title":"Nano Lett."},{"key":"ref_41","doi-asserted-by":"crossref","first-page":"5627","DOI":"10.1021\/nn301567c","article-title":"High-Throughput Fabrication of Photoconductors with High Detectivity, Photosensitivity, and Bandwidth","volume":"6","author":"Xing","year":"2012","journal-title":"ACS Nano"},{"key":"ref_42","doi-asserted-by":"crossref","first-page":"161102","DOI":"10.1063\/1.3491212","article-title":"Visible-blind deep-ultraviolet Schottky photodetector with a photocurrent gain based on individual Zn2GeO4 nanowire","volume":"97","author":"Li","year":"2010","journal-title":"Appl. Phys. Lett."},{"key":"ref_43","doi-asserted-by":"crossref","first-page":"2083","DOI":"10.1109\/LPT.2015.2453317","article-title":"Amorphous Indium-Gallium-Oxide UV Photodetectors","volume":"27","author":"Chang","year":"2015","journal-title":"IEEE Photonics Technol. Lett."},{"key":"ref_44","doi-asserted-by":"crossref","first-page":"1653","DOI":"10.1021\/acsaelm.9b00343","article-title":"High-Performance Solar Blind Ultraviolet Photodetector Based on Single Crystal Orientation Mg-Alloyed Ga2O3 Film Grown by a Nonequilibrium MOCVD Scheme","volume":"1","author":"Ma","year":"2019","journal-title":"ACS Appl. Electron. Mater."},{"key":"ref_45","doi-asserted-by":"crossref","first-page":"065010","DOI":"10.1088\/0268-1242\/31\/6\/065010","article-title":"Growth and characterization of alpha-phase Ga2\u2212xSnxO3 thin films for solar-blind ultraviolet applications","volume":"31","author":"Zhao","year":"2016","journal-title":"Semicond. Sci. Technol."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/24\/3\/787\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,10]],"date-time":"2025-10-10T13:49:05Z","timestamp":1760104145000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/24\/3\/787"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,1,25]]},"references-count":45,"journal-issue":{"issue":"3","published-online":{"date-parts":[[2024,2]]}},"alternative-id":["s24030787"],"URL":"https:\/\/doi.org\/10.3390\/s24030787","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2024,1,25]]}}}