{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T01:06:39Z","timestamp":1760144799644,"version":"build-2065373602"},"reference-count":38,"publisher":"MDPI AG","issue":"10","license":[{"start":{"date-parts":[[2024,5,10]],"date-time":"2024-05-10T00:00:00Z","timestamp":1715299200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"Natural Sciences and Engineering Research Council of Canada (NSERC)","award":["RGPIN-2019-06183","IRL3463"],"award-info":[{"award-number":["RGPIN-2019-06183","IRL3463"]}]},{"name":"Laboratoire Nanotechnologies Nanosystemes (LN2)","award":["RGPIN-2019-06183","IRL3463"],"award-info":[{"award-number":["RGPIN-2019-06183","IRL3463"]}]},{"name":"Centre National de la Recherche Scientifique (CNRS)","award":["RGPIN-2019-06183","IRL3463"],"award-info":[{"award-number":["RGPIN-2019-06183","IRL3463"]}]},{"name":"Universit\u00e9 de Sherbrooke","award":["RGPIN-2019-06183","IRL3463"],"award-info":[{"award-number":["RGPIN-2019-06183","IRL3463"]}]},{"name":"Universit\u00e9 de Grenoble Alpes (UGA)","award":["RGPIN-2019-06183","IRL3463"],"award-info":[{"award-number":["RGPIN-2019-06183","IRL3463"]}]},{"name":"Ecole Centrale Lyon (ECL)","award":["RGPIN-2019-06183","IRL3463"],"award-info":[{"award-number":["RGPIN-2019-06183","IRL3463"]}]},{"name":"Institut National des Sciences Appliqu\u00e9es (INSA) Lyon","award":["RGPIN-2019-06183","IRL3463"],"award-info":[{"award-number":["RGPIN-2019-06183","IRL3463"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>In this study, a p-Si\/ALD-Al2O3\/Ti\/Pt MOS (metal oxide semiconductor) device has been fabricated and used as a hydrogen sensor. The use of such a stack enables a reliable, industry-compatible CMOS fabrication process. ALD-Al2O3 has been chosen as it can be integrated into the back end of the line (BEOL) or in CMOS, post processing. The device response and recovery are demonstrated with good correlation between the capacitance variation and the hydrogen concentration. Detection down to 20 ppm at 140 \u00b0C was obtained and a response time of 56 s for 500 ppm was recorded.<\/jats:p>","DOI":"10.3390\/s24103020","type":"journal-article","created":{"date-parts":[[2024,5,10]],"date-time":"2024-05-10T03:21:04Z","timestamp":1715311264000},"page":"3020","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["CMOS Compatible Hydrogen Sensor Using Platinum Gate and ALD\u2013Aluminum Oxide"],"prefix":"10.3390","volume":"24","author":[{"given":"Adham","family":"Elshaer","sequence":"first","affiliation":[{"name":"Institut Interdisciplinaire d\u2019Innovation Technologique (3IT), Universit\u00e9 de Sherbrooke, 3000 Boul. Universit\u00e9, Sherbrooke, QC J1K 0A5, Canada"},{"name":"Laboratoire Nanotechnologies Nanosystemes (LN2) CNRS IRL-3463, 3000 Boul. Universit\u00e9, Sherbrooke, QC J1K 0A5, Canada"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3002-501X","authenticated-orcid":false,"given":"Serge","family":"Ecoffey","sequence":"additional","affiliation":[{"name":"Institut Interdisciplinaire d\u2019Innovation Technologique (3IT), Universit\u00e9 de Sherbrooke, 3000 Boul. Universit\u00e9, Sherbrooke, QC J1K 0A5, Canada"},{"name":"Laboratoire Nanotechnologies Nanosystemes (LN2) CNRS IRL-3463, 3000 Boul. Universit\u00e9, Sherbrooke, QC J1K 0A5, Canada"}]},{"given":"Abdelatif","family":"Jaouad","sequence":"additional","affiliation":[{"name":"Institut Interdisciplinaire d\u2019Innovation Technologique (3IT), Universit\u00e9 de Sherbrooke, 3000 Boul. Universit\u00e9, Sherbrooke, QC J1K 0A5, Canada"},{"name":"Laboratoire Nanotechnologies Nanosystemes (LN2) CNRS IRL-3463, 3000 Boul. Universit\u00e9, Sherbrooke, QC J1K 0A5, Canada"}]},{"given":"Stephane","family":"Monfray","sequence":"additional","affiliation":[{"name":"Laboratoire Nanotechnologies Nanosystemes (LN2) CNRS IRL-3463, 3000 Boul. Universit\u00e9, Sherbrooke, QC J1K 0A5, Canada"},{"name":"STMicroelectronics 850, rue Jean Monnet, 38926 Crolles, France"}]},{"given":"Dominique","family":"Drouin","sequence":"additional","affiliation":[{"name":"Institut Interdisciplinaire d\u2019Innovation Technologique (3IT), Universit\u00e9 de Sherbrooke, 3000 Boul. Universit\u00e9, Sherbrooke, QC J1K 0A5, Canada"},{"name":"Laboratoire Nanotechnologies Nanosystemes (LN2) CNRS IRL-3463, 3000 Boul. Universit\u00e9, Sherbrooke, QC J1K 0A5, Canada"}]}],"member":"1968","published-online":{"date-parts":[[2024,5,10]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Sasago, Y., Nakamura, H., Anzai, Y., Moritsuka, T., Odaka, T., and Usagawa, T. (2017, January 5\u20138). FETtype hydrogen sensor with short response time and high drift immunity. Proceedings of the 2017 Symposium on VLSI Technology, Kyoto, Japan.","DOI":"10.23919\/VLSIT.2017.7998213"},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"373","DOI":"10.1016\/j.ijhydene.2009.10.064","article-title":"Identifying performance gaps in hydrogen safety sensor technology for automotive and stationary applications","volume":"35","author":"Bousek","year":"2010","journal-title":"Int. J. Hydrogen Energy"},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"1402","DOI":"10.1021\/cr800339k","article-title":"Review of Electrochemical Hydrogen Sensors","volume":"109","author":"Korotcenkov","year":"2009","journal-title":"Chem. Rev."},{"key":"ref_4","unstructured":"H\u00fcbert, T., Majewski, J., Banach, U., Detjens, M., and Tiebe, C. (2024, March 17). Response Time Measurement of Hydrogen Sensors. Available online: https:\/\/h2tools.org\/sites\/default\/files\/2019-08\/paper_205.pdf."},{"key":"ref_5","unstructured":"Fellmuth, B., Schmidtchen, U., Palmisano, V., and Ronnefeld, E.W. (2016). Sensors for Safety and Process Control in Hydrogen Technologies, Taylor and Francis."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"1502","DOI":"10.1021\/ac60191a001","article-title":"A New Detector for Gaseous Components Using Semiconductive Thin Films","volume":"34","author":"Seiyama","year":"1962","journal-title":"Anal. Chem."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"55","DOI":"10.1063\/1.88053","article-title":"A hydro-gensensitive MOS fieldeffect transistor","volume":"26","author":"Shivaraman","year":"1975","journal-title":"Appl. Phys. Lett."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"988","DOI":"10.1063\/1.360293","article-title":"Kinetic modeling of hydrogen adsorption\/absorption in thin films on hydrogen-sensitive field-effect devices: Observation of large hydrogen-induced dipoles at the Pd-SiO2 interface","volume":"78","author":"Fogelberg","year":"1995","journal-title":"J. Appl. Phys."},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"014505","DOI":"10.1063\/1.1953866","article-title":"Hydrogen interaction with platinum and palladium metal\u2013insulator\u2013semiconductor devices","volume":"98","author":"Salomonsson","year":"2005","journal-title":"J. Appl. Phys."},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"034903","DOI":"10.1063\/1.1994941","article-title":"The influence of the insulator surface properties on the hydrogen response of field-effect gas sensors","volume":"98","author":"Eriksson","year":"2005","journal-title":"J. Appl. Phys."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"995","DOI":"10.1109\/JSEN.2005.845193","article-title":"A combinatorial approach for field-effect gas sensor research and development","volume":"5","author":"Klingvall","year":"2005","journal-title":"IEEE Sens. J."},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"183","DOI":"10.1016\/S0925-4005(01)00886-3","article-title":"Gas response dependence on gate metal morphology of field-effect devices","volume":"80","author":"Utaiwasin","year":"2001","journal-title":"Sens. Actuators B Chem."},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"4275","DOI":"10.1063\/1.1448874","article-title":"Difference in hydrogen sensitivity between Pt and Pd field-effect devices","volume":"91","author":"Eriksson","year":"2002","journal-title":"J. Appl. Phys."},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"14","DOI":"10.1109\/EDL.1984.25814","article-title":"No blister formation Pd\/Pt double metal gate MISFET hydrogen sensors","volume":"5","author":"Choi","year":"1984","journal-title":"IEEE Electron Device Lett."},{"key":"ref_15","unstructured":"Xiao, H. (2012). Metallization, SPIE. PM220."},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"074909","DOI":"10.1063\/1.3483942","article-title":"A Pt\u2013Ti\u2013O gate Si-metal-insulator- semiconductor field-effect transistor hydrogen gas sensor","volume":"108","author":"Usagawa","year":"2010","journal-title":"J. Appl. Phys."},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"105","DOI":"10.1016\/j.snb.2011.07.020","article-title":"Device characteristics for Pt\u2013Ti\u2013O gate Si\u2013MISFETs hydrogen gas sensors","volume":"160","author":"Usagawa","year":"2011","journal-title":"Sens. Actuators B Chem."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"1015","DOI":"10.1016\/j.proeng.2014.11.333","article-title":"Hydrogen-induced Dipoles and Sensing Principles of Pt-Ti-O Gate Si-MISFET Hydrogen Gas Sensors","volume":"87","author":"Usagawa","year":"2014","journal-title":"Procedia Eng."},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"195","DOI":"10.1080\/03772063.1990.11436883","article-title":"Hydrogen Gas Micro Sensor Based on SiO2 and TiO2 Systems","volume":"36","author":"Yadav","year":"1990","journal-title":"IETE J. Res."},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"632","DOI":"10.1049\/mnl.2020.0154","article-title":"Room temperature high hydrogen gas response in Pd\/TiO2\/Si\/Al capacitive sensor","volume":"15","author":"Ratan","year":"2020","journal-title":"Micro Nano Lett."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"654","DOI":"10.1063\/1.93638","article-title":"Palladium and platinum gate metal-oxide-semiconductor capacitors in hydrogen and oxygen mixtures","volume":"41","author":"Armgarth","year":"1982","journal-title":"Appl. Phys. Lett."},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"219","DOI":"10.1016\/j.solmat.2018.08.018","article-title":"Enhanced field effect passivation of c-Si surface via introduction of trap centers: Case of hafnium and aluminium oxide bilayer films deposited by thermal ALD","volume":"188","author":"Panigrahi","year":"2018","journal-title":"Sol. Energy Mater. Sol. Cells"},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"968","DOI":"10.1016\/j.surfcoat.2018.12.016","article-title":"Efficiency improvement of PERC solar cell using an aluminum oxide passivation layer prepared via spatial atomic layer deposition and post-annealing","volume":"358","author":"Hsu","year":"2019","journal-title":"Surf. Coat. Technol."},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"571","DOI":"10.1016\/j.snb.2011.08.031","article-title":"Robust gas detection at sub ppm concentrations","volume":"160","author":"Klingvall","year":"2011","journal-title":"Sens. Actuators B Chem."},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"2000367","DOI":"10.1002\/pssr.202000367","article-title":"Atomic-Layer-Deposited Al2O3 as Effective Barrier against the Diffusion of Hydrogen from SiNx:H Layers into Crystalline Silicon during Rapid Thermal Annealing","volume":"14","author":"Helmich","year":"2020","journal-title":"Phys. Status Solidi (RRL)\u2014Rapid Res. Lett."},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"46","DOI":"10.1186\/s11671-015-0757-y","article-title":"The impact of thickness and thermal annealing on refractive index for aluminum oxide thin films deposited by atomic layer deposition","volume":"10","author":"Wang","year":"2015","journal-title":"Nanoscale Res. Lett."},{"key":"ref_27","unstructured":"(2024, April 11). SEC-Z500X Series. Available online: https:\/\/www.horiba.com\/int\/semiconductor\/products\/detail\/action\/show\/Product\/sec-z500x-series-729\/."},{"key":"ref_28","unstructured":"H\u00fcbert, T., Boon-Brett, L., and Palmisano, V. (2013). Trends in Gas Sensor Development for Hydrogen Safety, European Union."},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"1274","DOI":"10.1063\/1.341846","article-title":"Hydrogen and ammonia response of metal-silicon dioxide-silicon structures with thin platinum gates","volume":"64","author":"Spetz","year":"1988","journal-title":"J. Appl. Phys."},{"key":"ref_30","doi-asserted-by":"crossref","first-page":"P1","DOI":"10.1016\/0022-5088(79)90216-9","article-title":"Diffusivity of Hydrogen in Platinum and the Diffusionelastic Phenomenon","volume":"63","author":"Kufudakis","year":"1979","journal-title":"J. Less Common Met."},{"key":"ref_31","doi-asserted-by":"crossref","first-page":"161","DOI":"10.1016\/S0925-4005(99)00069-6","article-title":"Sensing properties of palladium-gate MOS (Pd-MOS) hydrogen sensor-based on plasma grown silicon dioxide","volume":"71","author":"Dwivedi","year":"2000","journal-title":"Sens. Actuators B Chem."},{"key":"ref_32","doi-asserted-by":"crossref","first-page":"163","DOI":"10.1016\/S0924-4247(01)00672-0","article-title":"Low temperature hydrogen detection at high concentrations: Comparison of platinum and iridium","volume":"80","author":"Scharnagl","year":"2001","journal-title":"Sens. Actuators B Chem."},{"key":"ref_33","doi-asserted-by":"crossref","first-page":"7","DOI":"10.1016\/0921-5107(94)04018-Y","article-title":"Silicon-on-insulator technology for high temperature metal oxide semiconductor devices and circuits","volume":"29","author":"Flandre","year":"1995","journal-title":"Mater. Sci. Eng. B"},{"key":"ref_34","doi-asserted-by":"crossref","unstructured":"Cavalcante, C., Fenouillet-Beranger, C., Batude, P., Garros, X., Federspiel, X., Lacord, J., Kerdiles, S., Royet, A.S., Acosta-Alba, P., and Rozeau, O. (2020, January 16\u201319). 28nm FDSOI CMOS Technology (FEOL and BEOL) Thermal Stability for 3D Sequential Integration: Yield and Reliability Analysis. Proceedings of the 2020 IEEE Symposium on VLSI Technology, Honolulu, HI, USA.","DOI":"10.1109\/VLSITechnology18217.2020.9265075"},{"key":"ref_35","doi-asserted-by":"crossref","first-page":"131904","DOI":"10.1016\/j.snb.2022.131904","article-title":"Hydrogen sensors based on Pt\/\u03b1-Ga2O3:Sn\/Pt structures","volume":"364","author":"Almaev","year":"2022","journal-title":"Sens. Actuators B Chem."},{"key":"ref_36","unstructured":"Allen, P.E., and Holberg, D.R. (2011). CMOS Analog Circuit Design, Oxford University Press. 3rd Edition, New to this Edition."},{"key":"ref_37","doi-asserted-by":"crossref","first-page":"20491","DOI":"10.1016\/j.ijhydene.2014.03.251","article-title":"Evaluation of selectivity of commercial hydrogen sensors","volume":"39","author":"Palmisano","year":"2014","journal-title":"Int. J. Hydrogen Energy"},{"key":"ref_38","unstructured":"(2005). Lange\u2019s Handbook of Chemistry, McGraw-Hill Education. [16th ed.]. Available online: https:\/\/www.accessengineeringlibrary.com\/content\/book\/9780071432207."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/24\/10\/3020\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,10]],"date-time":"2025-10-10T14:43:14Z","timestamp":1760107394000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/24\/10\/3020"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,5,10]]},"references-count":38,"journal-issue":{"issue":"10","published-online":{"date-parts":[[2024,5]]}},"alternative-id":["s24103020"],"URL":"https:\/\/doi.org\/10.3390\/s24103020","relation":{},"ISSN":["1424-8220"],"issn-type":[{"type":"electronic","value":"1424-8220"}],"subject":[],"published":{"date-parts":[[2024,5,10]]}}}