{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,13]],"date-time":"2026-06-13T15:12:38Z","timestamp":1781363558295,"version":"3.54.1"},"reference-count":34,"publisher":"MDPI AG","issue":"11","license":[{"start":{"date-parts":[[2024,6,5]],"date-time":"2024-06-05T00:00:00Z","timestamp":1717545600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"Yunnan Province Innovation Team Project","award":["202305AS350026"],"award-info":[{"award-number":["202305AS350026"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>This paper presents a 14-bit hybrid column-parallel compact analog-to-digital converter (ADC) for the application of digital infrared focal plane arrays (IRFPAs) with compromised power and speed performance. The proposed hybrid ADC works in two phases: in the first phase, a 7-bit successive approximation register (SAR) ADC performs coarse quantization; in the second phase, a 7-bit single-slope (SS) ADC performs fine quantization to complete the residue voltage conversion. In this work, the number of unit capacitors is reduced to 1\/128th of that of a conventional 14-bit SAR ADC, which is beneficial for the application of small pixel-pitch IRFPAs. In this work, a tradeoff segmented thermometer-coded digital-to-analog converter (DAC) is adopted in the first 7-bit coarse quantization process: the lower 3-bit is binary coded, and the upper 4-bit is thermometer coded. A thermometer-coded DAC can improve the linearity of ADC. Capacitor array matching can be incredibly relaxed compared with a binary-weight 14-bit SAR ADC, resulting in a noncalibration feature. Moreover, by sharing DAC and comparator analog circuits between the SAR ADC and the SS ADC, the power consumption and layout area are consequently reduced. The proposed hybrid ADC was fabricated using a 180 nm CMOS process. The measurement results show that the proposed ADC has a differential nonlinearity of \u22120.61\/+0.84 LSB and a sampling rate of 120 kS\/s. The developed ADC achieves a temporal noise of 1.7 LSBrms at a temperature of 77 K. In addition, the SNDR is 72.9 dB, and the ENOB is 11.82 bit, respectively. Total power consumption is 71 \u03bcW from supply voltages of 3.3 V (analog) and 1.8 V (digital).<\/jats:p>","DOI":"10.3390\/s24113653","type":"journal-article","created":{"date-parts":[[2024,6,5]],"date-time":"2024-06-05T03:49:28Z","timestamp":1717559368000},"page":"3653","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":4,"title":["A 14-Bit Hybrid Analog-to-Digital Converter for Infrared Focal Plane Array Digital Readout Integrated Circuit"],"prefix":"10.3390","volume":"24","author":[{"given":"Douming","family":"Hu","sequence":"first","affiliation":[{"name":"Kunming Institute of Physics, Kunming 650223, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Libin","family":"Yao","sequence":"additional","affiliation":[{"name":"Kunming Institute of Physics, Kunming 650223, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Nan","family":"Chen","sequence":"additional","affiliation":[{"name":"Kunming Institute of Physics, Kunming 650223, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jiqing","family":"Zhang","sequence":"additional","affiliation":[{"name":"Kunming Institute of Physics, Kunming 650223, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shengyou","family":"Zhong","sequence":"additional","affiliation":[{"name":"Kunming Institute of Physics, Kunming 650223, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wenbiao","family":"Mao","sequence":"additional","affiliation":[{"name":"Kunming Institute of Physics, Kunming 650223, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Fang","family":"Zhu","sequence":"additional","affiliation":[{"name":"Kunming Institute of Physics, Kunming 650223, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Juan","family":"Zhang","sequence":"additional","affiliation":[{"name":"Kunming Institute of Physics, Kunming 650223, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2024,6,5]]},"reference":[{"key":"ref_1","first-page":"886","article-title":"Getting Small, new 10 \u00b5m pixel pitch cooled infrared products","volume":"9070","author":"Reibel","year":"2014","journal-title":"Infrared Technol. Appl. XL"},{"key":"ref_2","first-page":"140","article-title":"Small pixel pitch, high-definition MWIR, and dual band SWIR\/MWIR imaging sensors for SWaP-constrained applications","volume":"12534","author":"Hood","year":"2023","journal-title":"Infrared Technol. Appl. XLIX"},{"key":"ref_3","first-page":"128","article-title":"New IR detectors with small pixel pitch and high operating temperature","volume":"7854","author":"Trinolet","year":"2010","journal-title":"Infrared Millim. Wave Terahertz Technol."},{"key":"ref_4","first-page":"639","article-title":"Update on 10\u00b5m pixel pitch MCT-based focal plane array with enhanced functionalities","volume":"9451","author":"Reibel","year":"2015","journal-title":"Infrared Technol. Appl. XLI"},{"key":"ref_5","first-page":"443","article-title":"Small pixel HD MWIR camera technology","volume":"12107","author":"Caulfield","year":"2022","journal-title":"Infrared Technol. Appl. XLVIII"},{"key":"ref_6","first-page":"29","article-title":"Digital readout integrated circuit for high dynamic range infrared imaging","volume":"11740","author":"Poonnen","year":"2021","journal-title":"Infrared Technol. Appl. XLIX"},{"key":"ref_7","first-page":"246","article-title":"Small pixel pitch MCT P on N MWIR photodiodes at DEFIR: Towards 7.5um and beyond with very high image quality","volume":"12534","author":"Baier","year":"2023","journal-title":"Infrared Technol. Appl. XLIX"},{"key":"ref_8","first-page":"205","article-title":"High-definition and ultra-high-definition IR camera technology","volume":"12534","author":"Caulfield","year":"2023","journal-title":"Infrared Technol. Appl. XLIX"},{"key":"ref_9","first-page":"123","article-title":"Small pixel MWIR sensors for low SWaP applications","volume":"11741","author":"Huang","year":"2021","journal-title":"Infrared Technol. Appl. XLVII"},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"21747","DOI":"10.1109\/JSEN.2023.3300874","article-title":"A Digital Readout Integrated Circuit Based on Pixel-level ADC Incorporating On-chip Image Algorithm Calibration for IRFPA","volume":"23","author":"Zeng","year":"2023","journal-title":"IEEE Sens. J."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"3713","DOI":"10.1109\/TCSI.2019.2914191","article-title":"A DROIC based on PFM ADCs employing over-integration for error shaping","volume":"66","author":"Abbasi","year":"2019","journal-title":"IEEE Trans. Circuits Syst. I Regul. Papers"},{"key":"ref_12","doi-asserted-by":"crossref","unstructured":"Zeng, Y., Yang, S., Liu, Y., Li, Z., Huang, W., Huang, X., Zhou, X., Liu, J., and Li, Q. (2021, January 7\u201310). A 640\u00d7 512 30\u03bcm Pixel Pitch 1.8 mK-NETD 90.1 dB-SNR Digital Read-out Integrated Circuit with Fully on-Chip Image Algorithm Pixel-Level Calibration. Proceedings of the 2021 IEEE Asian Solid-State Circuits Conference (A-SSCC), Busan, Republic of Korea.","DOI":"10.1109\/A-SSCC53895.2021.9634744"},{"key":"ref_13","doi-asserted-by":"crossref","unstructured":"Lu, H., Zhou, Y., Lu, W., Zhang, Y., and Chen, Z. (2023, January 24\u201327). High Frame Rate High Precision ROIC with Pixel-Level CCO-Based ADC for Infrared FPAs. Proceedings of the 2023 IEEE 15th International Conference on ASIC (ASICON), Nanjing, China.","DOI":"10.1109\/ASICON58565.2023.10396358"},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"2873","DOI":"10.1109\/TCSI.2020.2979321","article-title":"A single slope ADC with row-wise noise reduction technique for CMOS image sensor","volume":"67","author":"Nie","year":"2020","journal-title":"IEEE Trans. Circuits Syst. I Regul. Pap."},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"2132","DOI":"10.1109\/JSSC.2021.3059909","article-title":"11-bit column-parallel single-slope ADC with first-step half-reference ramping scheme for high-speed CMOS image sensors","volume":"56","author":"Kim","year":"2021","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"423","DOI":"10.1109\/JSSC.2016.2609849","article-title":"A 46 \u00b5W 13 b 6.4 MS\/s SAR ADC with background mismatch and offset calibration","volume":"52","author":"Ding","year":"2016","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"393","DOI":"10.1109\/TED.2008.2011846","article-title":"A high-speed CMOS image sensor with column-parallel two-step single-slope ADCs","volume":"56","author":"Lim","year":"2009","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"2968","DOI":"10.1109\/JSSC.2007.908720","article-title":"Multiple-ramp column-parallel ADC architectures for CMOS image sensors","volume":"42","author":"Snoeij","year":"2007","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"2561","DOI":"10.1109\/TED.2013.2268207","article-title":"Low-power CMOS image sensor based on column-parallel single-slope\/SAR quantization scheme","volume":"60","author":"Tang","year":"2013","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"2831","DOI":"10.1109\/JSEN.2019.2957043","article-title":"Low power CMOS image sensors using two step single slope ADC with bandwidth-limited comparators & voltage range extended ramp generator for battery-limited application","volume":"20","author":"Park","year":"2019","journal-title":"IEEE Sens. J."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"3599","DOI":"10.1109\/TED.2016.2587721","article-title":"An area-efficient and low-power 12-b SAR\/single-slope ADC without calibration method for CMOS image sensors","volume":"63","author":"Kim","year":"2016","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"644","DOI":"10.1109\/TVLSI.2022.3156612","article-title":"A 12-bit two-step single-slope ADC with a constant input-common-mode level resistor ramp generator","volume":"30","author":"Zhang","year":"2022","journal-title":"IEEE Trans. Very Large Scale Integr. VLSI Syst."},{"key":"ref_23","doi-asserted-by":"crossref","unstructured":"Dai, S., Hu, K., and Rosenstein, J.K. (2020, January 12\u201314). A segmented SAR\/SS ADC with digital error correction and programmable resolution for column-parallel sensor arrays. Proceedings of the 2020 IEEE International Symposium on Circuits and Systems (ISCAS), Seville, Spain.","DOI":"10.1109\/ISCAS45731.2020.9180940"},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"1948","DOI":"10.1109\/4.735535","article-title":"A 10-b, 500-MSample\/s CMOS DAC in 0.6 mm\/sup 2","volume":"33","author":"Lin","year":"1998","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"1007","DOI":"10.1109\/JSSC.2010.2043893","article-title":"A 10-bit Charge-Redistribution ADC Consuming 1.9\u00b5W at 1 MS\/s","volume":"45","author":"Geraedts","year":"2010","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"2941","DOI":"10.1109\/JSSC.2016.2591822","article-title":"A 12 bit 100 MS\/s SAR-assisted digital-slope ADC","volume":"51","author":"Liu","year":"2016","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_27","doi-asserted-by":"crossref","first-page":"2645","DOI":"10.1109\/JSSC.2015.2466475","article-title":"A 10 bit 320 MS\/s low-cost SAR ADC for IEEE 802.11 ac applications in 20 nm CMOS","volume":"50","author":"Liu","year":"2015","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_28","doi-asserted-by":"crossref","unstructured":"Wang, Z., Liu, X., Wan, P., and Chen, Z. (2021, January 29\u201331). Design of a column-parallel SAR\/SS two-step hybrid ADC for sensor arrays. Proceedings of the 2021 IEEE 15th International Conference on Anti-Counterfeiting, Security, and Identification (ASID), Xiamen, China.","DOI":"10.1109\/ASID52932.2021.9651680"},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"371","DOI":"10.1109\/JSSC.1975.1050629","article-title":"All-MOS charge redistribution analog-to-digital conversion techniques. I","volume":"10","author":"McCreary","year":"1975","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_30","doi-asserted-by":"crossref","unstructured":"Promitzer, G. (2000, January 19\u201321). 12 bit low power fully differential switched capacitor non-calibrating successive approximation ADC with 1MS\/s. Proceedings of the 26th European Solid-State Circuits Conference, Stockholm, Sweden.","DOI":"10.1109\/4.933473"},{"key":"ref_31","doi-asserted-by":"crossref","first-page":"2380","DOI":"10.1109\/TED.2009.2030649","article-title":"8.9-megapixel video image sensor with 14-b column-parallel SA-ADC","volume":"56","author":"Matsuo","year":"2009","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_32","first-page":"451","article-title":"A low-power CMOS image sensor with area-efficient 14-bit two-step SA ADCs using pseudomultiple sampling method","volume":"62","author":"Kim","year":"2015","journal-title":"IEEE Trans. Circuits Syst. II Express Briefs"},{"key":"ref_33","doi-asserted-by":"crossref","first-page":"4396","DOI":"10.1109\/TCSI.2020.2998473","article-title":"A high area-efficiency 14-bit SAR ADC with hybrid capacitor DAC for array sensors","volume":"67","author":"Zhang","year":"2020","journal-title":"IEEE Trans. Circuits Syst. I Regul. Pap."},{"key":"ref_34","doi-asserted-by":"crossref","unstructured":"Moon, C.W., Yoon, K.S., and Lee, J. (2023). A 12~14-Bit SAR-SS Hybrid ADC with SS Bit Shifting Resolution Reconfigurable Method for Bio-Signal Processing. Electronics, 12.","DOI":"10.3390\/electronics12244916"}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/24\/11\/3653\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,10]],"date-time":"2025-10-10T14:53:54Z","timestamp":1760108034000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/24\/11\/3653"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,6,5]]},"references-count":34,"journal-issue":{"issue":"11","published-online":{"date-parts":[[2024,6]]}},"alternative-id":["s24113653"],"URL":"https:\/\/doi.org\/10.3390\/s24113653","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2024,6,5]]}}}