{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,23]],"date-time":"2026-07-23T12:23:54Z","timestamp":1784809434427,"version":"3.55.0"},"reference-count":42,"publisher":"MDPI AG","issue":"13","license":[{"start":{"date-parts":[[2024,6,29]],"date-time":"2024-06-29T00:00:00Z","timestamp":1719619200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"Innovative Cross Team of the Chinese Academy of Sciences","award":["JCTD-2020-13"],"award-info":[{"award-number":["JCTD-2020-13"]}]},{"name":"Innovative Cross Team of the Chinese Academy of Sciences","award":["2018YFE0203203"],"award-info":[{"award-number":["2018YFE0203203"]}]},{"name":"Innovative Cross Team of the Chinese Academy of Sciences","award":["61975203"],"award-info":[{"award-number":["61975203"]}]},{"name":"Innovative Cross Team of the Chinese Academy of Sciences","award":["20220508041RC"],"award-info":[{"award-number":["20220508041RC"]}]},{"name":"National Key R&amp;D Program of China","award":["JCTD-2020-13"],"award-info":[{"award-number":["JCTD-2020-13"]}]},{"name":"National Key R&amp;D Program of China","award":["2018YFE0203203"],"award-info":[{"award-number":["2018YFE0203203"]}]},{"name":"National Key R&amp;D Program of China","award":["61975203"],"award-info":[{"award-number":["61975203"]}]},{"name":"National Key R&amp;D Program of China","award":["20220508041RC"],"award-info":[{"award-number":["20220508041RC"]}]},{"name":"National Natural Science Foundation of China","award":["JCTD-2020-13"],"award-info":[{"award-number":["JCTD-2020-13"]}]},{"name":"National Natural Science Foundation of China","award":["2018YFE0203203"],"award-info":[{"award-number":["2018YFE0203203"]}]},{"name":"National Natural Science Foundation of China","award":["61975203"],"award-info":[{"award-number":["61975203"]}]},{"name":"National Natural Science Foundation of China","award":["20220508041RC"],"award-info":[{"award-number":["20220508041RC"]}]},{"name":"Jilin Province Youth Growth Science and Technology Program Project","award":["JCTD-2020-13"],"award-info":[{"award-number":["JCTD-2020-13"]}]},{"name":"Jilin Province Youth Growth Science and Technology Program Project","award":["2018YFE0203203"],"award-info":[{"award-number":["2018YFE0203203"]}]},{"name":"Jilin Province Youth Growth Science and Technology Program Project","award":["61975203"],"award-info":[{"award-number":["61975203"]}]},{"name":"Jilin Province Youth Growth Science and Technology Program Project","award":["20220508041RC"],"award-info":[{"award-number":["20220508041RC"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Pulsed lasers alter the optical properties of semiconductors and affect the photoelectric function of the photodetectors significantly, resulting in transient changes known as bleaching. Bleaching has a profound impact on the control and interference of photodetector applications. Experiments using pump\u2013probe techniques have made significant contributions to understanding ultrafast carrier dynamics. However, there are few theoretical studies to the best of our knowledge. Here, carrier dynamic models for semiconductors and photodetectors are established, respectively, employing the rectified carrier drift-diffusion model. The pulsed laser bleaching effect on seven types of semiconductors and photodetectors from visible to long-wave infrared is demonstrated. Additionally, a continuous bleaching method is provided, and the finite-difference time-domain (FDTD) method is used to solve carrier dynamic theory models. Laser parameters for continuous bleaching of semiconductors and photodetectors are calculated. The proposed bleaching model and achieved laser parameters for continuous bleaching are essential for several applications using semiconductor devices, such as infrared detection, biological imaging, and sensing.<\/jats:p>","DOI":"10.3390\/s24134226","type":"journal-article","created":{"date-parts":[[2024,7,1]],"date-time":"2024-07-01T10:14:46Z","timestamp":1719828886000},"page":"4226","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Pulsed Laser-Bleaching Semiconductor and Photodetector"],"prefix":"10.3390","volume":"24","author":[{"ORCID":"https:\/\/orcid.org\/0009-0004-6608-8823","authenticated-orcid":false,"given":"Chen","family":"Huang","sequence":"first","affiliation":[{"name":"Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China"},{"name":"University of Chinese Academy of Sciences, Beijing 100039, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Fei","family":"Chen","sequence":"additional","affiliation":[{"name":"Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ze","family":"Zhang","sequence":"additional","affiliation":[{"name":"Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing 100094, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xin","family":"Tang","sequence":"additional","affiliation":[{"name":"School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Meng","family":"Zhu","sequence":"additional","affiliation":[{"name":"No. 8358 Institute of the Third Academy of CASIC, Tianjin 300192, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Junjie","family":"Sun","sequence":"additional","affiliation":[{"name":"Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China"},{"name":"University of Chinese Academy of Sciences, Beijing 100039, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yi","family":"Chen","sequence":"additional","affiliation":[{"name":"Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xin","family":"Zhang","sequence":"additional","affiliation":[{"name":"Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jinghua","family":"Yu","sequence":"additional","affiliation":[{"name":"Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yiwen","family":"Zhang","sequence":"additional","affiliation":[{"name":"Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2024,6,29]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"1800419","DOI":"10.1002\/adom.201800419","article-title":"Additive manufacturing: Applications and directions in photonics and optoelectronics","volume":"7","author":"Camposeo","year":"2019","journal-title":"Adv. Opt. Mater."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"82","DOI":"10.1016\/j.nrjag.2014.05.002","article-title":"Characterization of CdSe-nanocrystals used in semiconductors for aerospace applications: Production and optical properties","volume":"3","author":"Hegazy","year":"2014","journal-title":"NRIAG J. Astron. Geophys."},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"189","DOI":"10.14429\/dsj.60.339","article-title":"Battlefield Lasers and Opto-electronics Systems","volume":"60","author":"Maini","year":"2010","journal-title":"Def. Sci. J."},{"key":"ref_4","first-page":"701","article-title":"Application of semiconductor and metal nanostructures in biology and medicine","volume":"2009","author":"Walkey","year":"2009","journal-title":"ASH Educ. Program Book"},{"key":"ref_5","doi-asserted-by":"crossref","unstructured":"Gonz\u00e1lez, A., Fang, Z., Socarras, Y., Serrat, J., V\u00e1zquez, D., Xu, J., and L\u00f3pez, A.M. (2016). Pedestrian detection at day\/night time with visible and FIR cameras: A comparison. Sensors, 16.","DOI":"10.3390\/s16060820"},{"key":"ref_6","unstructured":"Piprek, J. (2013). Semiconductor Optoelectronic Devices: Introduction to Physics and Simulation, Elsevier."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"873","DOI":"10.1007\/s11664-010-1218-0","article-title":"MWIR and LWIR HgCdTe infrared detectors operated with reduced cooling requirements","volume":"39","author":"Velicu","year":"2010","journal-title":"J. Electron. Mater."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"523","DOI":"10.1017\/S0263034613000396","article-title":"Optical breakdown threshold in fused silica with femtosecond laser pulses","volume":"31","author":"Bendib","year":"2013","journal-title":"Laser Part. Beams"},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"17363","DOI":"10.1038\/s41598-020-74068-y","article-title":"Broadband optical ultrafast reflectivity of Si, Ge and GaAs","volume":"10","author":"Polzoni","year":"2020","journal-title":"Sci. Rep."},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"032004","DOI":"10.1088\/2631-7990\/ab3a24","article-title":"Ultrafast dynamics observation during femtosecond laser-material interaction","volume":"1","author":"Guo","year":"2019","journal-title":"Int. J. Extrem. Manuf."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"1789","DOI":"10.1063\/1.367411","article-title":"Probing ultrafast carrier and phonon dynamics in semiconductors","volume":"83","author":"Othonos","year":"1998","journal-title":"J. Appl. Phys."},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"e12","DOI":"10.1017\/hpl.2016.10","article-title":"Ultrafast dynamical process of Ge irradiated by the femtosecond laser pulses","volume":"4","author":"Zhang","year":"2016","journal-title":"High Power Laser Sci. Eng."},{"key":"ref_13","doi-asserted-by":"crossref","unstructured":"Klingshirn, C.F. (2012). Semiconductor Optics, Springer Science & Business Media.","DOI":"10.1007\/978-3-642-28362-8"},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"217","DOI":"10.1038\/nmat767","article-title":"Inducing and probing non-thermal transitions in semiconductors using femtosecond laser pulses","volume":"1","author":"Sundaram","year":"2002","journal-title":"Nat. Mater."},{"key":"ref_15","doi-asserted-by":"crossref","unstructured":"Rafailov, M.K. (2011). Ultrafast bandgap photonics. Micro-and Nanotechnology Sensors, Systems, and Applications III, SPIE.","DOI":"10.1117\/12.884637"},{"key":"ref_16","doi-asserted-by":"crossref","unstructured":"Rafailov, M.K. (2016). Ultrafast bandgap photonics: Meta-stability of transient states. Ultrafast Bandgap Photonics, SPIE.","DOI":"10.1117\/12.2263202"},{"key":"ref_17","doi-asserted-by":"crossref","unstructured":"Xu, Z., Zhang, J., Lin, X., Shao, B., and Yang, P. (2016, January 6\u20139). Negative response of hgcdte photodiode induced by nanosecond laser pulse. Proceedings of the Fourth International Symposium on Laser Interaction with Matter, Chengdu, China.","DOI":"10.1117\/12.2268345"},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"1645","DOI":"10.1126\/science.242.4886.1645","article-title":"Laser femtochemistry","volume":"242","author":"Zewail","year":"1988","journal-title":"Science"},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"22872","DOI":"10.1021\/jp0622738","article-title":"Femtosecond time-resolved transient absorption spectroscopy of xanthophylls","volume":"110","author":"Niedzwiedzki","year":"2006","journal-title":"J. Phys. Chem. B"},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"3030","DOI":"10.1021\/ja076568q","article-title":"Charge carrier formation in polythiophene\/fullerene blend films studied by transient absorption spectroscopy","volume":"130","author":"Ohkita","year":"2008","journal-title":"J. Am. Chem. Soc."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"9389","DOI":"10.1016\/j.apsusc.2011.12.020","article-title":"Plasma dynamics and structural modifications induced by femtosecond laser pulses in quartz","volume":"258","author":"Puerto","year":"2012","journal-title":"Appl. Surf. Sci."},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"012006","DOI":"10.7567\/1882-0786\/ab59ae","article-title":"Dynamics and its modulation of laser-induced plasma and shockwave in femtosecond double-pulse ablation of silicon","volume":"13","author":"Pan","year":"2019","journal-title":"Appl. Phys. Express"},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"109433","DOI":"10.1016\/j.optlastec.2023.109433","article-title":"Laser-interfered studies in HgCdTe infrared focal plane array detector by high-repetition-rate mid-infrared supercontinuum fiber laser","volume":"163","author":"Wang","year":"2023","journal-title":"Opt. Laser Technol."},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"106001-0106001","DOI":"10.3788\/IRLA201847.0106001","article-title":"Transient response degradation of HgCdTe photovoltaic detectors under irradiation of nanosecond laser","volume":"47","author":"Zuodong","year":"2018","journal-title":"Infrared Laser Eng."},{"key":"ref_25","first-page":"0602007-6","article-title":"Model of transient bleaching effect of the direct bandgap semiconductor induced by femtosecond laser","volume":"39","author":"Dou","year":"2012","journal-title":"Zhongguo Jiguang(Chin. J. Lasers)"},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"3267","DOI":"10.1016\/j.ijleo.2015.07.154","article-title":"The study of transient bleaching effect of indirect bandgap semiconductors induced by femtosecond laser","volume":"126","author":"Dou","year":"2015","journal-title":"Optik"},{"key":"ref_27","doi-asserted-by":"crossref","unstructured":"Abdelmalek, A., Kotsedi, L., Bedrane, Z., Amara, E.-H., Girolami, M., and Maaza, M. (2022). Optical and thermal behavior of germanium thin films under femtosecond laser irradiation. Nanomaterials, 12.","DOI":"10.3390\/nano12213786"},{"key":"ref_28","doi-asserted-by":"crossref","first-page":"174107","DOI":"10.1103\/PhysRevB.97.174107","article-title":"Extreme ultraviolet probing of nonequilibrium dynamics in high energy density germanium","volume":"97","author":"Principi","year":"2018","journal-title":"Phys. Rev. B"},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"6577","DOI":"10.1016\/j.ijleo.2013.05.116","article-title":"Transient response analysis of photoconductive detector under ultra-short laser pulse radiation","volume":"124","author":"Du","year":"2013","journal-title":"Optik"},{"key":"ref_30","doi-asserted-by":"crossref","first-page":"444","DOI":"10.1016\/j.optmat.2015.04.062","article-title":"Damage threshold prediction of crystal materials irradiated by femtosecond lasers based on ionization model and two-temperature model","volume":"46","author":"Meng","year":"2015","journal-title":"Opt. Mater."},{"key":"ref_31","doi-asserted-by":"crossref","unstructured":"Kuzmany, H. (2009). Solid-State Spectroscopy: An Introduction, Springer Science & Business Media.","DOI":"10.1007\/978-3-642-01479-6"},{"key":"ref_32","doi-asserted-by":"crossref","first-page":"2944","DOI":"10.1063\/1.345414","article-title":"Intrinsic concentration, effective densities of states, and effective mass in silicon","volume":"67","author":"Green","year":"1990","journal-title":"J. Appl. Phys."},{"key":"ref_33","doi-asserted-by":"crossref","first-page":"2394","DOI":"10.1103\/PhysRevLett.82.2394","article-title":"Ultrafast electron dynamics in femtosecond optical breakdown of dielectrics","volume":"82","author":"Li","year":"1999","journal-title":"Phys. Rev. Lett."},{"key":"ref_34","doi-asserted-by":"crossref","first-page":"035201","DOI":"10.1103\/PhysRevB.100.035201","article-title":"Ultrafast relaxation dynamics of highly excited hot electrons in silicon","volume":"100","author":"Tanimura","year":"2019","journal-title":"Phys. Rev. B"},{"key":"ref_35","doi-asserted-by":"crossref","first-page":"1791","DOI":"10.1016\/S0038-1101(99)00132-X","article-title":"An energy relaxation time model for device simulation","volume":"43","author":"Gonzalez","year":"1999","journal-title":"Solid-State Electron."},{"key":"ref_36","unstructured":"Selberherr, S. (2012). Analysis and Simulation of Semiconductor Devices, Springer Science & Business Media."},{"key":"ref_37","doi-asserted-by":"crossref","first-page":"226","DOI":"10.1016\/j.infrared.2015.09.025","article-title":"The response characteristics of avalanche photodiodes to ultrashort pulsed laser","volume":"73","author":"Zhang","year":"2015","journal-title":"Infrared Phys. Technol."},{"key":"ref_38","unstructured":"Chuang, S.L. (2012). Physics of Photonic Devices, John Wiley & Sons."},{"key":"ref_39","doi-asserted-by":"crossref","first-page":"055003","DOI":"10.1088\/1361-6641\/abea6d","article-title":"Minority carrier lifetime in HgCdTe (100) epilayers and their potential application to background radiation limited MWIR photodiodes","volume":"36","author":"Kopytko","year":"2021","journal-title":"Semicond. Sci. Technol."},{"key":"ref_40","doi-asserted-by":"crossref","unstructured":"Levinshtein, M. (1997). Handbook Series on Semiconductor Parameters, World Scientific.","DOI":"10.1142\/9789812832078"},{"key":"ref_41","doi-asserted-by":"crossref","unstructured":"Feng, T., Chen, G., Han, H., and Qiao, J. (2021). Femtosecond-laser-ablation dynamics in silicon revealed by transient reflectivity change. Micromachines, 13.","DOI":"10.3390\/mi13010014"},{"key":"ref_42","doi-asserted-by":"crossref","first-page":"121102","DOI":"10.1063\/1.4978648","article-title":"Femtosecond-timescale buildup of electron mobility in GaAs observed via ultrabroadband transient terahertz spectroscopy","volume":"110","author":"Turchinovich","year":"2017","journal-title":"Appl. Phys. Lett."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/24\/13\/4226\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,10]],"date-time":"2025-10-10T15:07:37Z","timestamp":1760108857000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/24\/13\/4226"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,6,29]]},"references-count":42,"journal-issue":{"issue":"13","published-online":{"date-parts":[[2024,7]]}},"alternative-id":["s24134226"],"URL":"https:\/\/doi.org\/10.3390\/s24134226","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2024,6,29]]}}}