{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,5]],"date-time":"2026-05-05T17:58:53Z","timestamp":1778003933511,"version":"3.51.4"},"reference-count":34,"publisher":"MDPI AG","issue":"19","license":[{"start":{"date-parts":[[2024,10,1]],"date-time":"2024-10-01T00:00:00Z","timestamp":1727740800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"National Research Foundation of Korea","award":["RS-2024-00419201"],"award-info":[{"award-number":["RS-2024-00419201"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>We present a transparent memristor with a rough-surface (RS) bottom electrode (BE) with enhanced performance and reliability for a gasistor, which is a gas sensor plus a memristor, and its application in this paper. The transparent memristor, with an RS BE, exhibited low forming voltages (0.8 V) and a stable resistive switching behavior, with high endurance and an on\/off ratio of about 125. This improvement is due to the better control of the electric field distribution and the oxygen vacancy concentration when applying the RS BE to transparent memristors. Maintaining the stability of the conducting filament in an ambient air environment for extended periods of time is crucial for the application of memristors as gasistors. The memristor with an RS BE demonstrates an ability to sustain a stable-current state for approximately 104 s. As a result, it is shown that the proposed transparent memristor with an RS BE can significantly enhance the device\u2019s reliability for gasistor applications.<\/jats:p>","DOI":"10.3390\/s24196382","type":"journal-article","created":{"date-parts":[[2024,10,2]],"date-time":"2024-10-02T03:57:08Z","timestamp":1727841428000},"page":"6382","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":9,"title":["Enhancing the Resistive Switching Properties of Transparent HfO2-Based Memristor Devices for Reliable Gasistor Applications"],"prefix":"10.3390","volume":"24","author":[{"given":"Taegi","family":"Kim","sequence":"first","affiliation":[{"name":"Department of Semiconductor Systems Engineering, Convergence Engineering for Intelligent Drone, Institute of Semiconductor and System IC, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6635-5953","authenticated-orcid":false,"given":"Doowon","family":"Lee","sequence":"additional","affiliation":[{"name":"Division of Electrical, Electronic and Control Engineering, Kongju National University, Cheonan 31080, Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5067-7990","authenticated-orcid":false,"given":"Myoungsu","family":"Chae","sequence":"additional","affiliation":[{"name":"Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro City 153-8505, Tokyo, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Kyeong-Heon","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Convergence Electronic Engineering, Gyeongsang National University, Jinju-si 52725, Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hee-Dong","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Semiconductor Systems Engineering, Convergence Engineering for Intelligent Drone, Institute of Semiconductor and System IC, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2024,10,1]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"221602","DOI":"10.1063\/5.0008416","article-title":"Ultralow operation voltages of a transparent memristor based on bilayer ITO","volume":"116","author":"Wang","year":"2020","journal-title":"Appl. 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