{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,21]],"date-time":"2026-02-21T18:38:42Z","timestamp":1771699122668,"version":"3.50.1"},"reference-count":10,"publisher":"MDPI AG","issue":"3","license":[{"start":{"date-parts":[[2009,2,26]],"date-time":"2009-02-26T00:00:00Z","timestamp":1235606400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>A resonant microbeam accelerometer of a novel highly symmetric structure based on MEMS bulk-silicon technology is proposed and some numerical modeling results for this scheme are presented. The accelerometer consists of two proof masses, four supporting hinges, two anchors, and a vibrating triple beam, which is clamped at both ends to the two proof masses. LPCVD silicon rich nitride is chosen as the resonant triple beam material, and parameter optimization of the triple-beam structure has been performed. The triple beam is excited and sensed electromagnetically by film electrodes located on the upper surface of the beam. Both simulation and experimental results show that the novel structure increases the scale factor of the resonant accelerometer, and ameliorates other performance issues such as cross axis sensitivity of insensitive input acceleration, etc.<\/jats:p>","DOI":"10.3390\/s90301330","type":"journal-article","created":{"date-parts":[[2009,3,1]],"date-time":"2009-03-01T04:04:25Z","timestamp":1235880265000},"page":"1330-1338","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":16,"title":["An Electromagnetically Excited Silicon Nitride Beam Resonant Accelerometer"],"prefix":"10.3390","volume":"9","author":[{"given":"Deyong","family":"Chen","sequence":"first","affiliation":[{"name":"Institute of Electronics, Chinese Academy of Sciences, State Key Laboratories of Transducer Technology, Beijing, P.R. China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhengwei","family":"Wu","sequence":"additional","affiliation":[{"name":"Institute of Electronics, Chinese Academy of Sciences, State Key Laboratories of Transducer Technology, Beijing, P.R. China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Lei","family":"Liu","sequence":"additional","affiliation":[{"name":"Institute of Electronics, Chinese Academy of Sciences, State Key Laboratories of Transducer Technology, Beijing, P.R. China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xiaojing","family":"Shi","sequence":"additional","affiliation":[{"name":"Institute of Electronics, Chinese Academy of Sciences, State Key Laboratories of Transducer Technology, Beijing, P.R. China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Junbo","family":"Wang","sequence":"additional","affiliation":[{"name":"Institute of Electronics, Chinese Academy of Sciences, State Key Laboratories of Transducer Technology, Beijing, P.R. China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2009,2,26]]},"reference":[{"key":"ref_1","unstructured":"Roessig, T.A., Howe, R.T., Pisano, A.P., and Smith, J.H. Surface micromachined resonant accelerometer. Chicago, IL, USA."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"784","DOI":"10.1109\/JMEMS.2002.805207","article-title":"A vacuum packaged surface micromachined resonant accelerometer","volume":"11","author":"Seshia","year":"2002","journal-title":"J. Microelectromechan. Syst"},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"185","DOI":"10.1016\/0924-4247(94)00887-N","article-title":"A novel resonant silicon accelerometer in bulk-micromachining technology","volume":"46\u201347","author":"Burrer","year":"1995","journal-title":"Sens. Actuat. A"},{"key":"ref_4","unstructured":"Roszhart, T.V., Jerman, H., Drake, J., and de Cotiis, C. (,  1995). An Inertial Grade, Micromachined Vibrating Beam Accelerometer. Stockholm, Sweden."},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"258","DOI":"10.1016\/j.sna.2005.03.067","article-title":"Silicon resonant accelerometer with electronic compensation of input-output cross-talk","volume":"123\u2013124","author":"Ferrari","year":"2005","journal-title":"Sens. Actuat. A"},{"key":"ref_6","first-page":"281","article-title":"Bulk silicon resonant accelerometer","volume":"26","author":"Jia","year":"2005","journal-title":"Chin. J. Semiconduct"},{"key":"ref_7","doi-asserted-by":"crossref","unstructured":"Helsel, M., Gassner, G., Robinson, M., and Woodruff, J. (1994). A Navigation Grade Micro-Machined Silicon Accelerometer. IEEE Position Location and Navigation Symposium, 51\u201358.","DOI":"10.1109\/PLANS.1994.303295"},{"key":"ref_8","unstructured":"Lee, B.L., Oh, C.H., Oh, Y.S., and Chun, K. (,  1999). A Novel Resonant Accelerometer: Electrostatic Stiffness Type. Sendai, Japan."},{"key":"ref_9","unstructured":"Chen, D., Cui, D., and Xia, S. (,  2005). Design and Modeling of a Silicon Nitride Beam Resonant Pressure Sensor for Temperature Compensation. Hong Kong and Macau, China."},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"548","DOI":"10.1117\/12.425398","article-title":"Thermally excited SiN beam resonant pressure sensor","volume":"4408","author":"Chen","year":"2001","journal-title":"Proceedings of SPIE"}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/9\/3\/1330\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T22:09:55Z","timestamp":1760220595000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/9\/3\/1330"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2009,2,26]]},"references-count":10,"journal-issue":{"issue":"3","published-online":{"date-parts":[[2009,3]]}},"alternative-id":["s90301330"],"URL":"https:\/\/doi.org\/10.3390\/s90301330","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2009,2,26]]}}}