{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,27]],"date-time":"2026-02-27T08:08:01Z","timestamp":1772179681719,"version":"3.50.1"},"reference-count":13,"publisher":"MDPI AG","issue":"4","license":[{"start":{"date-parts":[[2009,4,9]],"date-time":"2009-04-09T00:00:00Z","timestamp":1239235200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>A novel method has been developed to fabricate submicron beams with galvanic etch stop for Si in TMAH. The different Au:Si area ratios before and after the release of the beams are used to trigger the galvanic etch stop to fabricate submicron single crystal Si beams in standard Si wafers. Before the beams are released from the substrate, the Au electrodes are connected to the substrate electrically. The Au:Si area ratios are much smaller than the threshold value. TMAH etches the Si wafers. After the beams are fully released, they are mechanically supported by the Au wires, which also serve as the galvanic etch stop cathodes. The Au:Si area ratios are much larger than the threshold value. The beams are protected by galvanic etch stop. The thicknesses of the beams are determined by shallow dry etching before TMAH etching. A 530 nm thick beam was fabricated in standard (111) wafers. Experiments showed that the beam thicknesses did not change with over etching, even if the SiO2 layers on the surface of the beams were stripped.<\/jats:p>","DOI":"10.3390\/s90402470","type":"journal-article","created":{"date-parts":[[2009,4,9]],"date-time":"2009-04-09T11:51:16Z","timestamp":1239277876000},"page":"2470-2477","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":3,"title":["Fabrication of Submicron Beams with Galvanic Etch Stop for Si in TMAH"],"prefix":"10.3390","volume":"9","author":[{"given":"Rong","family":"Lu","sequence":"first","affiliation":[{"name":"State Key Laboratory of Transducer Technology , Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Yishan Road 800, Shanghai, P.R. China"},{"name":"Graduate School of the Chinese Academy of Sciences, Beijing 100039, P.R. China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yanhong","family":"Wu","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Transducer Technology , Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Yishan Road 800, Shanghai, P.R. China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Haitao","family":"Cheng","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Transducer Technology , Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Yishan Road 800, Shanghai, P.R. China"},{"name":"Graduate School of the Chinese Academy of Sciences, Beijing 100039, P.R. China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8873-9576","authenticated-orcid":false,"given":"Heng","family":"Yang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Transducer Technology , Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Yishan Road 800, Shanghai, P.R. China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xinxin","family":"Li","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Transducer Technology , Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Yishan Road 800, Shanghai, P.R. China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yuelin","family":"Wang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Transducer Technology , Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Yishan Road 800, Shanghai, P.R. China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2009,4,9]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"061101","DOI":"10.1063\/1.1927327","article-title":"Nanoelectromechanical systems","volume":"76","author":"Ekinci","year":"2005","journal-title":"Rev. Sci. Instrum"},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"114","DOI":"10.1038\/nnano.2006.208","article-title":"Ultra-sensitive NEMS-based cantilevers for sensing, scanned probe and very high-frequency applications","volume":"2","author":"Li","year":"2007","journal-title":"Nature naotechnology"},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"583","DOI":"10.1021\/nl052134m","article-title":"Zeptogram-scale nanomechanical mass sensing","volume":"6","author":"Yang","year":"2006","journal-title":"Nano letters"},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"2653","DOI":"10.1063\/1.117548","article-title":"Fabrication of high frequency nanometer scale mechanical resonators from bulk Si crystals","volume":"69","author":"Cleland","year":"1996","journal-title":"Appl. Phys. Lett"},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"096106","DOI":"10.1103\/PhysRevLett.87.096106","article-title":"Nanomechanical Resonator Shuttling Single Electrons at Radio Frequencies","volume":"87","author":"Erbe","year":"2001","journal-title":"Phys. Rev. Lett"},{"key":"ref_6","unstructured":"Li, X., Ono, T., Wang, Y., and Esashi, M. (,  2002). Study on ultra-thin NEMS cantilevers \u2013 high yield fabrication and size-effect on Young\u2019s modulus of silicon. Las Vegas, NV, U.S.A."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"308","DOI":"10.1109\/68.826923","article-title":"Micromachining of high-contrast optical waveguides in <111> siliconwafers","volume":"12","author":"Pandraud","year":"2000","journal-title":"IEEE Photonic. Technol. Lett"},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"1185","DOI":"10.1007\/s00542-008-0628-x","article-title":"A novel method to fabricate single crystal nano beams with (111)-oriented Si micromachining","volume":"14","author":"Yang","year":"2008","journal-title":"Microsyst. Technol"},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"279","DOI":"10.1016\/S0924-4247(96)01331-3","article-title":"Electrochemical etch-stop in TMAH without externally applied bias","volume":"56","author":"French","year":"1996","journal-title":"Sens. Actuat"},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"595","DOI":"10.1016\/S0957-4158(98)00017-8","article-title":"Electrochemical etch stop engineering for bulk micromachining","volume":"8","author":"Ashruf","year":"1998","journal-title":"Mechatronics"},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"281","DOI":"10.1016\/S0924-4247(97)01711-1","article-title":"A new contactless electrochemical etch-stop based on a gold\/silicon\/TMAH galvanic cell","volume":"66","author":"Ashruf","year":"1998","journal-title":"Sens. Actuat"},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"1215","DOI":"10.1088\/0960-1317\/14\/8\/014","article-title":"Galvanic etch stop for Si in KOH. Journal Micromechnical","volume":"14","author":"Connolly","year":"2004","journal-title":"Microengineering"},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"728","DOI":"10.1016\/S0924-4247(97)80047-7","article-title":"Boron etch-stop in TMAH solutions","volume":"54","author":"Steinsland","year":"1996","journal-title":"Sens. Actuat"}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/9\/4\/2470\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T22:10:11Z","timestamp":1760220611000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/9\/4\/2470"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2009,4,9]]},"references-count":13,"journal-issue":{"issue":"4","published-online":{"date-parts":[[2009,4]]}},"alternative-id":["s90402470"],"URL":"https:\/\/doi.org\/10.3390\/s90402470","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2009,4,9]]}}}