{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,15]],"date-time":"2025-11-15T16:56:48Z","timestamp":1763225808086,"version":"build-2065373602"},"reference-count":34,"publisher":"MDPI AG","issue":"10","license":[{"start":{"date-parts":[[2009,10,21]],"date-time":"2009-10-21T00:00:00Z","timestamp":1256083200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Ion-sensitive, field-effect transistors (ISFET) have been useful biosensors in many applications. However, the signal-to-noise ratio of the ISFET is limited by its intrinsic, low-frequency noise. This paper presents an ISFET capable of utilizing lateral-bipolar conduction to reduce low-frequency noise. With a particular layout design, the conduction efficiency is further enhanced. Moreover, the ISFET is compatible with the standard CMOS technology. All materials above the gate-oxide are removed by simple, die-level post-CMOS process, allowing ions to modulate the lateral-bipolar current directly. By varying the gate-to-bulk voltage, the operation mode of the ISFET is controlled effectively, so is the noise performance measured and compared. Finally, the biasing conditions preferable for different low-noise applications are identified. Under the identified biasing condition, the signal-to-noise ratio of the ISFET as a pH sensor is proved to be improved by more than five times.<\/jats:p>","DOI":"10.3390\/s91008336","type":"journal-article","created":{"date-parts":[[2009,10,21]],"date-time":"2009-10-21T10:03:28Z","timestamp":1256119408000},"page":"8336-8348","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":14,"title":["A CMOS-Compatible, Low-Noise ISFET Based on High Efficiency Ion-Modulated Lateral-Bipolar Conduction"],"prefix":"10.3390","volume":"9","author":[{"given":"Sheng-Ren","family":"Chang","sequence":"first","affiliation":[{"name":"Institute of Electronics Engineering, National Tsing Hua University, 30013 HsinChu, Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hsin","family":"Chen","sequence":"additional","affiliation":[{"name":"Institute of Electronics Engineering, National Tsing Hua University, 30013 HsinChu, Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2009,10,21]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1016\/S0925-4005(02)00301-5","article-title":"Thirty years of ISFETOLOGY What happened in the past 30 years and what may happen in the next 30 years","volume":"88","author":"Bergveld","year":"2003","journal-title":"Sens. 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