{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,18]],"date-time":"2025-10-18T15:12:52Z","timestamp":1760800372021,"version":"build-2065373602"},"reference-count":20,"publisher":"MDPI AG","issue":"4","license":[{"start":{"date-parts":[[2020,4,15]],"date-time":"2020-04-15T00:00:00Z","timestamp":1586908800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61974163"],"award-info":[{"award-number":["61974163"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Symmetry"],"abstract":"<jats:p>The reliability of integrated circuits under advanced process nodes is facing more severe challenges. Single-event transients (SET) are an important cause of soft errors in space applications. The SET caused by heavy ions in the 28 nm bulk silicon inverter chains was studied. A test chip with good symmetry layout design was fabricated based on the 28 nm process, and the chip was struck by using 5 kinds of heavy ions with different linear energy transfer (LET) values on heavy-ion accelerator. The research results show that in advanced technology, smaller sensitive volume makes SET cross-section measured at 28 nm smaller than 65 nm by an order of magnitude, the lower critical charge required to generate SET will increase the reliability threat of low-energy ions to the circuit, and high-energy ions are more likely to cause single-event multiple transient (SEMT), which cannot be ignored in practical circuits. The transients pulse width data can be used as a reference for SET modeling in complex circuits.<\/jats:p>","DOI":"10.3390\/sym12040624","type":"journal-article","created":{"date-parts":[[2020,4,15]],"date-time":"2020-04-15T09:19:50Z","timestamp":1586942390000},"page":"624","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":4,"title":["Investigation of Heavy-Ion Induced Single-Event Transient in 28 nm Bulk Inverter Chain"],"prefix":"10.3390","volume":"12","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-2977-2923","authenticated-orcid":false,"given":"Anquan","family":"Wu","sequence":"first","affiliation":[{"name":"College of Computer, National University of Defense Technology, Changsha 410073, China"}]},{"given":"Bin","family":"Liang","sequence":"additional","affiliation":[{"name":"College of Computer, National University of Defense Technology, Changsha 410073, China"}]},{"given":"Yaqing","family":"Chi","sequence":"additional","affiliation":[{"name":"College of Computer, National University of Defense Technology, Changsha 410073, China"}]},{"given":"Zhenyu","family":"Wu","sequence":"additional","affiliation":[{"name":"College of Computer, National University of Defense Technology, Changsha 410073, China"}]}],"member":"1968","published-online":{"date-parts":[[2020,4,15]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"1747","DOI":"10.1109\/TNS.2010.2042613","article-title":"Current and future challenges in radiation effects on CMOS electronics","volume":"57","author":"Dodd","year":"2010","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"1767","DOI":"10.1109\/TNS.2013.2255624","article-title":"Single event transients in digital CMOS\u2014A review","volume":"60","author":"Massengill","year":"2013","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_3","doi-asserted-by":"crossref","unstructured":"Song, R., Shao, J., Liang, B., Chi, Y., and Chen, J. (2019). Characterization of P-hit and N-hit single-event transient using heavy ion microbeam. IEICE Electron. Express.","DOI":"10.1587\/elex.16.20190141"},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"042411","DOI":"10.1007\/s11432-015-5471-y","article-title":"Single event upset induced by single event double transient and its well-structure dependency in 65-nm bulk CMOS technology","volume":"59","author":"Huang","year":"2016","journal-title":"Sci. China Inf. Sci."},{"key":"ref_5","doi-asserted-by":"crossref","unstructured":"Andjelkovic, M., Petrovic, V., Nenadovic, M., Breitenreiter, A., Krstic, M., and Kraemer, R. (September, January 30). Design of an On-chip System for the SET Pulse Width Measurement. Proceedings of the 2017 Euromicro Conference on Digital System Design (DSD), Vienna, Austria.","DOI":"10.1109\/DSD.2017.70"},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"81","DOI":"10.1109\/TNS.2016.2637935","article-title":"Detailed SET measurement and characterization of a 65 nm bulk technology","volume":"64","author":"Glorieux","year":"2016","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"99","DOI":"10.1016\/j.microrel.2017.03.004","article-title":"Improved on-chip self-triggered single-event transient measurement circuit design and applications","volume":"71","author":"Chen","year":"2017","journal-title":"Microelectron. Reliab."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"3330","DOI":"10.1109\/TNS.2015.2486774","article-title":"Heavy-ion-induced charge sharing measurement with a novel uniform vertical inverter chains (UniVIC) SEMT test structure","volume":"62","author":"Huang","year":"2015","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_9","doi-asserted-by":"crossref","unstructured":"Evans, A., Glorieux, M., Alexandrescu, D., Polo, C.B., and Ferlet-Cavrois, V. (2016, January 19\u201323). Single event multiple transient (SEMT) measurements in 65 nm bulk technology. Proceedings of the 2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS), Bremen, Germany.","DOI":"10.1109\/RADECS.2016.8093192"},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"151","DOI":"10.1016\/j.microrel.2018.06.014","article-title":"Single-event multiple transients in guard-ring hardened inverter chains of different layout designs","volume":"87","author":"Zhao","year":"2018","journal-title":"Microelectron. Reliab."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"3462","DOI":"10.1109\/TNS.2006.886044","article-title":"Digital single event transient trends with technology node scaling","volume":"53","author":"Benedetto","year":"2006","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"2506","DOI":"10.1109\/TNS.2007.910125","article-title":"Characterization of digital single event transient pulse-widths in 130-nm and 90-nm CMOS technologies","volume":"54","author":"Narasimham","year":"2007","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_13","first-page":"3336","article-title":"Scaling trends in SET pulse widths in sub-100 nm bulk CMOS processes","volume":"57","author":"Gadlage","year":"2010","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_14","first-page":"3380","article-title":"The effect of layout topology on single-event transient pulse quenching in a 65 nm bulk CMOS process","volume":"57","author":"Ahlbin","year":"2010","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_15","doi-asserted-by":"crossref","unstructured":"Zhang, J., Chen, J., Huang, P., Li, S., and Fang, L. (2019). The Effect of Deep N+ Well on Single-Event Transient in 65 nm Triple-Well NMOSFET. Symmetry, 11.","DOI":"10.3390\/sym11020154"},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"119","DOI":"10.1109\/TNS.2016.2636871","article-title":"Characterization of single-event transient pulse broadening effect in 65 nm bulk inverter chains using heavy ion microbeam","volume":"64","author":"Chi","year":"2016","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"085009","DOI":"10.1088\/1674-4926\/38\/8\/085009","article-title":"Analysis of single event transient pulse-width in 65 nm commercial radiation-hardened logic cell","volume":"38","author":"Li","year":"2017","journal-title":"J. Semicond."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"2136","DOI":"10.1109\/TNS.2017.2672820","article-title":"Experimental investigation of single-event transient waveforms depending on transistor spacing and charge sharing in 65-nm CMOS","volume":"64","author":"Hofbauer","year":"2017","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"2104","DOI":"10.1109\/TNS.2005.860682","article-title":"Direct measurement of transient pulses induced by laser and heavy ion irradiation in deca-nanometer devices","volume":"52","author":"Paillet","year":"2005","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"542","DOI":"10.1109\/TDMR.2006.885589","article-title":"On-chip characterization of single-event transient pulsewidths","volume":"6","author":"Narasimham","year":"2006","journal-title":"IEEE Trans. Device Mater. Reliab."}],"container-title":["Symmetry"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/2073-8994\/12\/4\/624\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,13]],"date-time":"2025-10-13T13:30:46Z","timestamp":1760362246000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/2073-8994\/12\/4\/624"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,4,15]]},"references-count":20,"journal-issue":{"issue":"4","published-online":{"date-parts":[[2020,4]]}},"alternative-id":["sym12040624"],"URL":"https:\/\/doi.org\/10.3390\/sym12040624","relation":{},"ISSN":["2073-8994"],"issn-type":[{"type":"electronic","value":"2073-8994"}],"subject":[],"published":{"date-parts":[[2020,4,15]]}}}