{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,11]],"date-time":"2026-04-11T05:49:19Z","timestamp":1775886559760,"version":"3.50.1"},"reference-count":20,"publisher":"MDPI AG","issue":"12","license":[{"start":{"date-parts":[[2020,12,8]],"date-time":"2020-12-08T00:00:00Z","timestamp":1607385600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["11690041"],"award-info":[{"award-number":["11690041"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["11675233"],"award-info":[{"award-number":["11675233"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Science and Technology on Analog Integrated Circuit Laboratory","award":["JCKY2019210C054"],"award-info":[{"award-number":["JCKY2019210C054"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Symmetry"],"abstract":"<jats:p>The on-orbit single-event upset (SEU) rate of nanodevices is closely related to the orbital parameters. In this paper, the on-orbit SEU rate (OOSR) induced by a heavy ion (HI), high-energy proton (HEP) and low-energy proton (LEP) for a 65 nm SRAM device is calculated by using the software SPACE RADIATION under different orbits based on the experimental data. The results indicate that the OOSR induced by the HI, HEP and LEP varies with the orbital parameters. In particular, the orbital height, inclination and shieling thickness are the key parameters that affect the contribution of the LEP to the total OOSR. Our results provide guidance for the selection of nanodevices on different orbits.<\/jats:p>","DOI":"10.3390\/sym12122030","type":"journal-article","created":{"date-parts":[[2020,12,10]],"date-time":"2020-12-10T22:15:36Z","timestamp":1607638536000},"page":"2030","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Influence of Orbital Parameters on SEU Rate of Low-Energy Proton in Nano-SRAM Device"],"prefix":"10.3390","volume":"12","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-9198-0002","authenticated-orcid":false,"given":"Bing","family":"Ye","sequence":"first","affiliation":[{"name":"Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Li-Hua","family":"Mo","sequence":"additional","affiliation":[{"name":"Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China"},{"name":"School of Nuclear Science and Technology, University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Tao","family":"Liu","sequence":"additional","affiliation":[{"name":"Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"You-Mei","family":"Sun","sequence":"additional","affiliation":[{"name":"Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jie","family":"Liu","sequence":"additional","affiliation":[{"name":"Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2020,12,8]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"2474","DOI":"10.1109\/TNS.2007.909845","article-title":"Low-energy proton-induced single-event-upsets in 65 nm node, silicon-on-insulator, latches and memory cells","volume":"54","author":"Rodbell","year":"2007","journal-title":"IEEE Trans. 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