{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,25]],"date-time":"2025-10-25T19:11:43Z","timestamp":1761419503863,"version":"build-2065373602"},"reference-count":39,"publisher":"MDPI AG","issue":"4","license":[{"start":{"date-parts":[[2022,4,7]],"date-time":"2022-04-07T00:00:00Z","timestamp":1649289600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Symmetry"],"abstract":"<jats:p>This paper proposes a symmetric eight transistor-three-memristor (8T3R) non-volatile static random-access memory (NVSRAM) cell. Non-volatile operation is achieved through the use of a memristor element, which stores data in the form of its resistive state and is referred to as RRAM. This cell is able to store the information after power-off mode and provides fast power-on\/power-off speeds. The proposed symmetric 8T3R NVSRAM cell performs better instant-on operation compared to existing NVSRAMs at different technology nodes. The simulation results show that resistance of RAM-based 8T3R SRAM cell consumes less power in standby mode and has excellent switching performance during power on\/off speed. It also has better read and write stability and significantly improves noise tolerance than the conventional asymmetrical 6T SRAM and other NVSRAM cells. The power dissipation is evaluated at different technology nodes. Hence, our proposed symmetric 8T3R NVSRAM cell is suitable to use at low power and embedded applications.<\/jats:p>","DOI":"10.3390\/sym14040768","type":"journal-article","created":{"date-parts":[[2022,4,7]],"date-time":"2022-04-07T22:23:23Z","timestamp":1649370203000},"page":"768","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":22,"title":["A Symmetric Novel 8T3R Non-Volatile SRAM Cell for Embedded Applications"],"prefix":"10.3390","volume":"14","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-5400-3384","authenticated-orcid":false,"given":"Uma Maheshwar","family":"Janniekode","sequence":"first","affiliation":[{"name":"VNR Vignana Jyothi Institute of Engineering and Technology, JNTUH University, Hyderabad 500085, India"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Rajendra Prasad","family":"Somineni","sequence":"additional","affiliation":[{"name":"VNR Vignana Jyothi Institute of Engineering and Technology, JNTUH University, Hyderabad 500085, India"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4750-8384","authenticated-orcid":false,"given":"Osamah Ibrahim","family":"Khalaf","sequence":"additional","affiliation":[{"name":"Al-Nahrain Nanorenewable Energy Research Center, Al-Nahrain University, Baghdad 64074, Iraq"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Malakeh Muhyiddeen","family":"Itani","sequence":"additional","affiliation":[{"name":"General Education Program, Dar Al-Hekma University, Jeddah 22246, Saudi Arabia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9005-0615","authenticated-orcid":false,"given":"J.","family":"Chinna Babu","sequence":"additional","affiliation":[{"name":"Department of ECE, Annamacharya Institute of Technology and Sciences, Rajampet 516126, India"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ghaida Muttashar","family":"Abdulsahib","sequence":"additional","affiliation":[{"name":"Department of Computer Engineering, University of Technology, Baghdad 19006, Iraq"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2022,4,7]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"526","DOI":"10.1186\/1556-276X-9-526","article-title":"Overview of emerging nonvolatile memory technologies","volume":"9","author":"Meena","year":"2014","journal-title":"Nanoscale Res. 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