{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T00:53:12Z","timestamp":1760143992946,"version":"build-2065373602"},"reference-count":33,"publisher":"MDPI AG","issue":"3","license":[{"start":{"date-parts":[[2024,3,8]],"date-time":"2024-03-08T00:00:00Z","timestamp":1709856000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Symmetry"],"abstract":"<jats:p>In this paper, the effect of temperature on Single-Electron Transistor (SET) electrical behavior is investigated. In particular, a study of the current-voltage (I-V) curves according to parameter (temperature and gate voltage) variation is presented. Among others, the interesting phenomenon of the N-type negative differential resistance is reported as the temperature increases from absolute zero (0 K) to room temperature. Finally, theoretical analysis and simulation shows that the choice of the appropriate temperature and gate-voltage combination the SET I-V curves demonstrates either a negative differential resistance region, a switching effect, or a simple resistance behavior.<\/jats:p>","DOI":"10.3390\/sym16030327","type":"journal-article","created":{"date-parts":[[2024,3,8]],"date-time":"2024-03-08T03:52:11Z","timestamp":1709869931000},"page":"327","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["The Effect of Temperature on a Single-Electron Transistor I-V Curve"],"prefix":"10.3390","volume":"16","author":[{"given":"Panagiota","family":"Papadopoulou","sequence":"first","affiliation":[{"name":"Physics Department, International Hellenic University, 654 04 Kavala, Greece"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2454-5630","authenticated-orcid":false,"given":"Kyriakos","family":"Ovaliadis","sequence":"additional","affiliation":[{"name":"Physics Department, International Hellenic University, 654 04 Kavala, Greece"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0009-0007-9254-1531","authenticated-orcid":false,"given":"Eleni","family":"Philippousi","sequence":"additional","affiliation":[{"name":"Physics Department, International Hellenic University, 654 04 Kavala, Greece"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0918-9343","authenticated-orcid":false,"given":"Michael P.","family":"Hanias","sequence":"additional","affiliation":[{"name":"Physics Department, International Hellenic University, 654 04 Kavala, Greece"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8253-9653","authenticated-orcid":false,"given":"Lykourgos","family":"Magafas","sequence":"additional","affiliation":[{"name":"Physics Department, International Hellenic University, 654 04 Kavala, Greece"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8484-1402","authenticated-orcid":false,"given":"Stavros G.","family":"Stavrinides","sequence":"additional","affiliation":[{"name":"Physics Department, International Hellenic University, 654 04 Kavala, Greece"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2024,3,8]]},"reference":[{"key":"ref_1","first-page":"587436","article-title":"Design of a single-electron memory operating at room temperature","volume":"2013","author":"Touati","year":"2013","journal-title":"Int. Sch. Res. Not."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"94","DOI":"10.1016\/j.mejo.2005.04.049","article-title":"Design and simulation of a nanoelectronic single-electron control\u2014Not gate","volume":"37","author":"Zardalidis","year":"2006","journal-title":"Microelectron. J."},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"138","DOI":"10.1166\/jno.2018.2211","article-title":"Analysis and simulation of coulomb blockade and coulomb diamonds in fullerene single electron transistors","volume":"13","author":"Hosseini","year":"2018","journal-title":"J. Nanoelectron. Optoelectron."},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"1786","DOI":"10.1016\/S0921-4526(99)02972-5","article-title":"Coulomb blockade in a SET transistor and a single tunnel junction: Langevin equation approach","volume":"284","author":"Chouvaev","year":"2000","journal-title":"Phys. B Condens. Matter"},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"24","DOI":"10.5121\/vlsic.2010.1403","article-title":"Single electron transistor: Applications & problems","volume":"1","author":"Kumar","year":"2010","journal-title":"Int. J. VLSI Des. Commun. Syst. (VLSICS)"},{"key":"ref_6","first-page":"1907","article-title":"Single electron transistor and its simulation methods","volume":"2","author":"Sinha","year":"2014","journal-title":"Int. J. Eng. Dev. Res."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"042114","DOI":"10.1063\/1.3298557","article-title":"Application of negative differential conductance in Al\/AlOx single-electron transistors for background charge characterization","volume":"96","author":"George","year":"2010","journal-title":"Appl. Phys. Lett."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"115457","DOI":"10.1103\/PhysRevB.84.115457","article-title":"Image charge effects in single-molecule junctions: Breaking of symmetries and negative-differential resistance in a benzene single-electron transistor","volume":"84","author":"Kaasbjerg","year":"2011","journal-title":"Phys. Rev. B"},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"167","DOI":"10.1109\/TNANO.2006.869949","article-title":"Compact analytical model for room-temperature-operating silicon single-electron transistors with discrete quantum energy levels","volume":"5","author":"Miyaji","year":"2006","journal-title":"IEEE Trans. Nanotechnol."},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"1750201","DOI":"10.1142\/S0218126617502012","article-title":"Nano-scale silicon quantum dot-based single-electron transistors and their application to design of analog-to-digital convertors at room temperature","volume":"26","author":"Aminzadeh","year":"2017","journal-title":"J. Circuits Syst. Comput."},{"key":"ref_11","unstructured":"Chen, X., Xing, Z., and Sui, B. (2013). Computer Engineering and Technology, Proceedings of the 17th CCF Conference, NCCET 2013, Xining, China, 20\u201322 July 2013, Springer. Revised Selected Papers 17."},{"key":"ref_12","unstructured":"S\u00e9e, J., Dollfus, P., Galdin, S., and Hesto, P. (2004, January 23). Negative differential conductance in silicon nanocrystal single-electron devices. Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No. 04EX850), Leuven, Belgium."},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"425","DOI":"10.1049\/iet-cds.2009.0247","article-title":"Analysis of negative differential conductance of single-island single-electron transistors owing to Coulomb oscillations","volume":"4","author":"Sui","year":"2010","journal-title":"IET Circuits Devices Syst."},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"3409","DOI":"10.1121\/1.2800315","article-title":"Entrainment and stimulated emission of ultrasonic piezoelectric auto-oscillators","volume":"122","author":"Weaver","year":"2007","journal-title":"J. Acoust. Soc. Am."},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"2902","DOI":"10.1063\/1.116326","article-title":"An all-chromium single electron transistor: A possible new element of single electronics","volume":"68","author":"Kuzmin","year":"1996","journal-title":"Appl. Phys. Lett."},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"1704175","DOI":"10.1002\/adfm.201704175","article-title":"Designing Negative Differential Resistance Devices Based on Self-Heating","volume":"28","author":"Gibson","year":"2018","journal-title":"Adv. Funct. Mater."},{"key":"ref_17","unstructured":"Livermore, C. (1998). Coulomb Blockade Spectroscopy of Tunnel-Coupled Quantum Dots, Harvard University."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"1896","DOI":"10.1126\/science.275.5308.1896","article-title":"Single-molecule transistors","volume":"275","author":"Kouwenhoven","year":"1997","journal-title":"Science"},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"1824","DOI":"10.1103\/PhysRevLett.64.1824","article-title":"Effect of the electromagnetic environment on the Coulomb blockade in ultrasmall tunnel junctions","volume":"64","author":"Devoret","year":"1990","journal-title":"Phys. Rev. Lett."},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"786","DOI":"10.1038\/19718","article-title":"Coherent control of macroscopic quantum states in a single-Cooper-pair box","volume":"398","author":"Nakamura","year":"1999","journal-title":"Nature"},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"13682","DOI":"10.1103\/PhysRevB.53.13682","article-title":"Background charge noise in metallic single-electron tunneling devices","volume":"53","author":"Zorin","year":"1996","journal-title":"Phys. Rev. B"},{"key":"ref_22","unstructured":"Grabert, H., and Devoret, M.H. (2013). Single Charge Tunneling: Coulomb Blockade Phenomena in Nanostructures, Springer Science & Business Media."},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"886","DOI":"10.1126\/science.1069372","article-title":"Manipulating the quantum state of an electrical circuit","volume":"296","author":"Vion","year":"2002","journal-title":"Science"},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"579","DOI":"10.1149\/1.3122117","article-title":"High k dielectrics for future CMOS devices","volume":"19","author":"Robertson","year":"2009","journal-title":"ECS Trans."},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"399","DOI":"10.1146\/annurev-matsci-062910-100445","article-title":"Recent developments in semiconductor thermoelectric physics and materials","volume":"41","author":"Shakouri","year":"2011","journal-title":"Annu. Rev. Mater. Res."},{"key":"ref_26","unstructured":"Claeys, C., and Simoen, E. (2013). Radiation Effects in Advanced Semiconductor Materials and Devices, Springer Science & Business Media."},{"key":"ref_27","doi-asserted-by":"crossref","first-page":"105","DOI":"10.1038\/nmat2090","article-title":"Complex thermoelectric materials","volume":"7","author":"Snyder","year":"2008","journal-title":"Nat. Mater."},{"key":"ref_28","doi-asserted-by":"crossref","first-page":"S433","DOI":"10.1088\/0957-4484\/15\/7\/051","article-title":"Electrical resistance: An atomistic view","volume":"15","author":"Datta","year":"2004","journal-title":"Nanotechnology"},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"012060","DOI":"10.1088\/1742-6596\/187\/1\/012060","article-title":"Modelling transport in single electron transistor","volume":"187","author":"Hien","year":"2009","journal-title":"J. Phys. Conf. Ser."},{"key":"ref_30","doi-asserted-by":"crossref","first-page":"654840","DOI":"10.1155\/2015\/654840","article-title":"Electrical switching in thin film structures based on transition metal oxides","volume":"2015","author":"Pergament","year":"2015","journal-title":"Adv. Condens. Matter Phys."},{"key":"ref_31","doi-asserted-by":"crossref","first-page":"814694","DOI":"10.1155\/2013\/814694","article-title":"Symmetric negative differential resistance in a molecular nanosilver chain","volume":"2013","author":"Kim","year":"2013","journal-title":"J. Nanomater."},{"key":"ref_32","doi-asserted-by":"crossref","first-page":"8613571","DOI":"10.1155\/2017\/8613571","article-title":"A fabrication process for emerging nanoelectronic devices based on oxide tunnel junctions","volume":"2017","author":"Drouin","year":"2017","journal-title":"J. Nanomater."},{"key":"ref_33","doi-asserted-by":"crossref","unstructured":"Das, J.C., De, D., Debnath, B., and Sarkar, A. (2023, January 7\u20138). Single Layer Design of Dual Banyan Network Using Quantum-Dot Cellular Automata. Proceedings of the 2023 IEEE Devices for Integrated Circuit (DevIC), Kalyani, India.","DOI":"10.1109\/DevIC57758.2023.10134926"}],"container-title":["Symmetry"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/2073-8994\/16\/3\/327\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,10]],"date-time":"2025-10-10T14:10:44Z","timestamp":1760105444000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/2073-8994\/16\/3\/327"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,3,8]]},"references-count":33,"journal-issue":{"issue":"3","published-online":{"date-parts":[[2024,3]]}},"alternative-id":["sym16030327"],"URL":"https:\/\/doi.org\/10.3390\/sym16030327","relation":{},"ISSN":["2073-8994"],"issn-type":[{"type":"electronic","value":"2073-8994"}],"subject":[],"published":{"date-parts":[[2024,3,8]]}}}