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Japan","award":["23H02052"],"award-info":[{"award-number":["23H02052"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Symmetry"],"abstract":"<jats:p>Controlling the balance between piezoelectric and flexoelectric effects is crucial for tailoring the electromechanical responses of a material. In twisted graphene, it is found that the electromechanical response near the domain walls (DWs) is dominated by either the flexoelectric effect as in twisted bilayer graphene (tBLG) or the piezoelectric effect as in twisted monolayer\u2013bilayer graphene (tMBG). The codominance of both effects in a single system is rare. Here, utilizing lateral piezoresponse force microscopy (LPFM), we show that piezoelectric and flexoelectric effects can coexist and are equally important in twisted double bilayer graphene (tDBG), termed as the piezo-flexoelectric effect. Unlike tBLG and tMBG, distinctive two-step LPFM spatial profiles are captured across the moir\u00e9 DWs of tDBG. By decomposing the LPFM signal into axisymmetric and antisymmetric components, we find that the angular dependence of both components satisfies sinusoidal relations. Quantitatively, the in-plane piezoelectric coefficient of DWs in tDBG is determined to be 0.15 pm\/V by dual AC resonance tracking (DART) LPFM measurement. The conclusion is further supported by continuum mechanics simulations. Our results demonstrate that the stacking configuration serves as a powerful tuning knob for modulating the electromechanical responses of twisted van der Waals materials.<\/jats:p>","DOI":"10.3390\/sym16111524","type":"journal-article","created":{"date-parts":[[2024,11,14]],"date-time":"2024-11-14T04:15:49Z","timestamp":1731557749000},"page":"1524","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":3,"title":["Co-Dominant Piezoelectric and Flexoelectric Effects in Twisted Double Bilayer Graphene"],"prefix":"10.3390","volume":"16","author":[{"given":"Yuanhao","family":"Wei","sequence":"first","affiliation":[{"name":"State Key Laboratory of Mechanics and Control for Aerospace Structures, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yuhao","family":"Li","sequence":"additional","affiliation":[{"name":"National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China"},{"name":"National Key Laboratory of Spintronics, Nanjing University, Suzhou 215163, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hanhao","family":"Zhang","sequence":"additional","affiliation":[{"name":"National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shengsheng","family":"Lin","sequence":"additional","affiliation":[{"name":"National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Takashi","family":"Taniguchi","sequence":"additional","affiliation":[{"name":"Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3701-8119","authenticated-orcid":false,"given":"Kenji","family":"Watanabe","sequence":"additional","affiliation":[{"name":"Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Cun-Fa","family":"Gao","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Mechanics and Control for Aerospace Structures, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7421-3306","authenticated-orcid":false,"given":"Yan","family":"Shi","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Mechanics and Control for Aerospace Structures, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2024,11,14]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"119","DOI":"10.1103\/RevModPhys.84.119","article-title":"Domain wall nanoelectronics","volume":"84","author":"Catalan","year":"2012","journal-title":"Rev. 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