{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,30]],"date-time":"2026-07-30T11:38:12Z","timestamp":1785411492761,"version":"3.56.0"},"reference-count":73,"publisher":"MDPI AG","issue":"15","license":[{"start":{"date-parts":[[2026,7,23]],"date-time":"2026-07-23T00:00:00Z","timestamp":1784764800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100003725","name":"National Research Foundation (NRF) of Korea","doi-asserted-by":"publisher","award":["RS-2026-25497358"],"award-info":[{"award-number":["RS-2026-25497358"]}],"id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"publisher"}]},{"award":["RS-2026-25497358"],"award-info":[{"award-number":["RS-2026-25497358"]}],"id":[{"id":"https:\/\/ror.org\/013aysd81","id-type":"ROR","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Int. J. Mol. Sci.","IJMS"],"abstract":"<jats:p>Two-dimensional transition metal dichalcogenides are being studied as channel materials for beyond-silicon electronics because their atomic-scale thickness enables strong electrostatic control. Among these materials, tungsten diselenide (WSe2) is particularly attractive because it exhibits ambipolar transport. Despite this advantage, practical WSe2 transistors remain constrained by Fermi-level pinning at metal contacts, contact-dominated carrier injection, and defect-induced variability, making controlled doping a central issue. This review examines doping strategies developed for WSe2, focusing on methods compatible with atomically thin van der Waals semiconductors. The discussion covers surface charge-transfer doping by molecular adsorbates, Lewis acids, and alkali metals, as well as defect-mediated chemisorption, self-limiting oxide interfacial layers, and in situ vacancy engineering during growth. Particular attention is given to the thermodynamic mechanisms of charge transfer, the distinction between contact-selective and channel-selective doping, and the trade-offs between degenerate and non-degenerate doping. The effects of doping are also discussed, including contact-resistance reduction through Schottky-barrier narrowing, threshold-voltage control, apparent mobility enhancement through impurity screening and defect passivation, and thermal and temporal stability. The review further summarizes how controlled doping has enabled complementary metal-oxide-semiconductor logic circuits and identifies the remaining challenges in air stability, selective-area patterning, scalable synthesis, and low-temperature integration for monolithic three-dimensional electronic devices.<\/jats:p>","DOI":"10.3390\/ijms27156552","type":"journal-article","created":{"date-parts":[[2026,7,23]],"date-time":"2026-07-23T09:11:26Z","timestamp":1784797886000},"page":"6552","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Comprehensive Review on Doping Strategies for Two-Dimensional Tungsten Diselenide"],"prefix":"10.3390","volume":"27","author":[{"given":"Donghun","family":"Lee","sequence":"first","affiliation":[{"name":"Department of Chemistry, Kookmin University, Seoul 02707, Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2026,7,23]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"770","DOI":"10.1038\/s41928-025-01448-5","article-title":"Gate stack engineering of two-dimensional transistors","volume":"8","author":"Kim","year":"2025","journal-title":"Nat. Electron."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"16052","DOI":"10.1038\/natrevmats.2016.52","article-title":"Two-dimensional semiconductors for transistors","volume":"1","author":"Chhowalla","year":"2016","journal-title":"Nat. Rev. Mater."},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"23","DOI":"10.1038\/s41563-023-01715-w","article-title":"2D materials for logic device scaling","volume":"23","author":"Wu","year":"2024","journal-title":"Nat. Mater."},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"43","DOI":"10.1038\/s41586-021-03339-z","article-title":"Promises and prospects of two-dimensional transistors","volume":"591","author":"Liu","year":"2021","journal-title":"Nature"},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"507","DOI":"10.1038\/s41586-019-1573-9","article-title":"Graphene and two-dimensional materials for silicon technology","volume":"573","author":"Akinwande","year":"2019","journal-title":"Nature"},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"19709","DOI":"10.1021\/acsnano.3c03060","article-title":"Toward High-Performance p-Type Two-Dimensional Field Effect Transistors: Contact Engineering, Scaling, and Doping","volume":"17","author":"Oberoi","year":"2023","journal-title":"ACS Nano"},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"9075","DOI":"10.1038\/srep09075","article-title":"Silicene nanomesh","volume":"5","author":"Pan","year":"2015","journal-title":"Sci. Rep."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"2307779","DOI":"10.1002\/adma.202307779","article-title":"Manipulating Surface Band Bending of III-Nitride Nanowires with Ambipolar Charge-Transfer Characteristics: A Pathway Toward Advanced Photoswitching Logic Gates and Encrypted Optical Communication","volume":"36","author":"Chen","year":"2024","journal-title":"Adv. Mater."},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"1355","DOI":"10.1038\/s41563-024-01860-w","article-title":"1T\u2032-transition metal dichalcogenide monolayers stabilized on 4H-Au nanowires for ultrasensitive SERS detection","volume":"23","author":"Li","year":"2024","journal-title":"Nat. Mater."},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"2201880","DOI":"10.1002\/adma.202201880","article-title":"Integrated Memory Devices Based on 2D Materials","volume":"34","author":"Xue","year":"2022","journal-title":"Adv. Mater."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"10481","DOI":"10.1038\/s41467-024-54841-7","article-title":"Stacking selected polarization switching and phase transition in vdW ferroelectric \u03b1-In2Se3 junction devices","volume":"15","author":"Wu","year":"2024","journal-title":"Nat. Commun."},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"33","DOI":"10.1038\/s41565-021-01004-0","article-title":"Dual-coupling-guided epitaxial growth of wafer-scale single-crystal WS2 monolayer on vicinal a-plane sapphire","volume":"17","author":"Wang","year":"2022","journal-title":"Nat. Nanotechnol."},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"948","DOI":"10.1038\/s41565-024-01702-5","article-title":"Charge-transfer contacts for the measurement of correlated states in high-mobility WSe2","volume":"19","author":"Pack","year":"2024","journal-title":"Nat. Nanotechnol."},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"2121","DOI":"10.1038\/s41467-017-02297-3","article-title":"Probing defect dynamics in monolayer MoS2 via noise nanospectroscopy","volume":"8","author":"Song","year":"2017","journal-title":"Nat. Commun."},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"103501","DOI":"10.1063\/1.4820408","article-title":"WSe2 field effect transistors with enhanced ambipolar characteristics","volume":"103","author":"Das","year":"2013","journal-title":"Appl. Phys. Lett."},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"5649","DOI":"10.1038\/s41467-025-59684-4","article-title":"High-performance p-type bilayer WSe2 field effect transistors by nitric oxide doping","volume":"16","author":"Ghosh","year":"2025","journal-title":"Nat. Commun."},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"703","DOI":"10.1038\/s41427-018-0062-1","article-title":"The ambipolar transport behavior of WSe2 transistors and its analogue circuits","volume":"10","author":"Wang","year":"2018","journal-title":"NPG Asia Mater."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"709","DOI":"10.1021\/nl504256y","article-title":"Large Area Growth and Electrical Properties of p-Type WSe2 Atomic Layers","volume":"15","author":"Zhou","year":"2015","journal-title":"Nano Lett."},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"071601","DOI":"10.1063\/1.4928658","article-title":"Spin- and valley-coupled electronic states in monolayer WSe2 on bilayer graphene","volume":"107","author":"Sugawara","year":"2015","journal-title":"Appl. Phys. Lett."},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"343","DOI":"10.1038\/nphys2942","article-title":"Spin and pseudospins in layered transition metal dichalcogenides","volume":"10","author":"Xu","year":"2014","journal-title":"Nat. Phys."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"2109899","DOI":"10.1002\/adma.202109899","article-title":"Fermi-Level Pinning-Free WSe2 Transistors via 2D Van der Waals Metal Contacts and Their Circuits","volume":"34","author":"Jang","year":"2022","journal-title":"Adv. Mater."},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"2803","DOI":"10.1021\/acs.nanolett.4c05970","article-title":"Improvement of P-Type Contact in WSe2 Field-Effect Transistors via Defect Engineering","volume":"25","author":"Zhang","year":"2025","journal-title":"Nano Lett."},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"2000616","DOI":"10.1002\/aelm.202000616","article-title":"Control of the Schottky Barrier and Contact Resistance at Metal\u2013WSe2 Interfaces by Polymeric Doping","volume":"6","author":"Ngo","year":"2020","journal-title":"Adv. Electron. Mater."},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"10808","DOI":"10.1021\/nn5047844","article-title":"Air Stable p-Doping of WSe2 by Covalent Functionalization","volume":"8","author":"Zhao","year":"2014","journal-title":"ACS Nano"},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"4928","DOI":"10.1021\/acs.nanolett.5b00668","article-title":"High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits","volume":"15","author":"Yu","year":"2015","journal-title":"Nano Lett."},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"2206939","DOI":"10.1002\/adma.202206939","article-title":"P-Type 2D Semiconductors for Future Electronics","volume":"35","author":"Xiong","year":"2023","journal-title":"Adv. Mater."},{"key":"ref_27","doi-asserted-by":"crossref","first-page":"786","DOI":"10.1038\/s41928-021-00670-1","article-title":"Transistors based on two-dimensional materials for future integrated circuits","volume":"4","author":"Das","year":"2021","journal-title":"Nat. Electron."},{"key":"ref_28","doi-asserted-by":"crossref","first-page":"11","DOI":"10.1186\/s40580-025-00478-1","article-title":"Recent advances in CMOS-compatible synthesis and integration of 2D materials","volume":"12","author":"Katiyar","year":"2025","journal-title":"Nano Converg."},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"9893","DOI":"10.1038\/s41467-025-65431-6","article-title":"Revealing hidden interlayer excitons in 2D bilayers via hybrid molecular gating","volume":"16","author":"Kovalchuk","year":"2025","journal-title":"Nat. Commun."},{"key":"ref_30","doi-asserted-by":"crossref","first-page":"2101598","DOI":"10.1002\/adma.202101598","article-title":"Molecular Dopant-Dependent Charge Transport in Surface-Charge-Transfer-Doped Tungsten Diselenide Field Effect Transistors","volume":"33","author":"Kim","year":"2021","journal-title":"Adv. Mater."},{"key":"ref_31","doi-asserted-by":"crossref","first-page":"138453","DOI":"10.1016\/j.cplett.2021.138453","article-title":"Carrier-type modulation of tungsten diselenide (WSe2) field-effect transistors (FETs) via benzyl viologen (BV) doping","volume":"770","author":"Kim","year":"2021","journal-title":"Chem. Phys. Lett."},{"key":"ref_32","doi-asserted-by":"crossref","first-page":"2720","DOI":"10.1021\/acs.nanolett.6b00390","article-title":"Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts","volume":"16","author":"Yamamoto","year":"2016","journal-title":"Nano Lett."},{"key":"ref_33","doi-asserted-by":"crossref","first-page":"2443","DOI":"10.1021\/acs.nanolett.9b05162","article-title":"Monolithic Interface Contact Engineering to Boost Optoelectronic Performances of 2D Semiconductor Photovoltaic Heterojunctions","volume":"20","author":"Yang","year":"2020","journal-title":"Nano Lett."},{"key":"ref_34","doi-asserted-by":"crossref","first-page":"11034","DOI":"10.1021\/acs.nanolett.3c03328","article-title":"In Situ Defect Engineering of Controllable Carrier Types in WSe2 for Homomaterial Inverters and Self-Powered Photodetectors","volume":"23","author":"Kang","year":"2023","journal-title":"Nano Lett."},{"key":"ref_35","doi-asserted-by":"crossref","first-page":"255","DOI":"10.1080\/15980316.2023.2204205","article-title":"Charge transfer enabled by the p-doping of WSe2 for 2D material-based printable electronics","volume":"24","author":"Zou","year":"2023","journal-title":"J. Inf. Disp."},{"key":"ref_36","doi-asserted-by":"crossref","first-page":"055701","DOI":"10.1088\/1361-6528\/ad8e45","article-title":"Controllable p-type doping and improved conductance of few-layer WSe2 via Lewis acid","volume":"36","author":"Li","year":"2025","journal-title":"Nanotechnology"},{"key":"ref_37","doi-asserted-by":"crossref","first-page":"13528","DOI":"10.1021\/acs.nanolett.4c02948","article-title":"Low Contact Resistance WSe2 p-Type Transistors with Highly Stable, CMOS-Compatible Dopants","volume":"24","author":"Kim","year":"2024","journal-title":"Nano Lett."},{"key":"ref_38","doi-asserted-by":"crossref","first-page":"3788","DOI":"10.1021\/nl301702r","article-title":"High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts","volume":"12","author":"Fang","year":"2012","journal-title":"Nano Lett."},{"key":"ref_39","doi-asserted-by":"crossref","first-page":"4160","DOI":"10.1038\/s41467-025-59423-9","article-title":"Uncovering the doping mechanism of nitric oxide in high-performance P-type WSe2 transistors","volume":"16","author":"Lan","year":"2025","journal-title":"Nat. Commun."},{"key":"ref_40","doi-asserted-by":"crossref","first-page":"2005045","DOI":"10.1002\/adfm.202005045","article-title":"Molecular Functionalization of Chemically Active Defects in WSe2 for Enhanced Opto-Electronics","volume":"30","author":"Zhao","year":"2020","journal-title":"Adv. Funct. Mater."},{"key":"ref_41","doi-asserted-by":"crossref","first-page":"7545","DOI":"10.1021\/acsnano.8b09351","article-title":"Band Structure Engineering of Layered WSe2 via One-Step Chemical Functionalization","volume":"13","author":"Park","year":"2019","journal-title":"ACS Nano"},{"key":"ref_42","doi-asserted-by":"crossref","first-page":"59","DOI":"10.1038\/s41699-023-00421-0","article-title":"Thiol-based defect healing of WSe2 and WS2","volume":"7","author":"Schwarz","year":"2023","journal-title":"npj 2D Mater. Appl."},{"key":"ref_43","doi-asserted-by":"crossref","first-page":"5616","DOI":"10.1021\/acs.nanolett.4c06060","article-title":"Improved Hysteresis of High-Performance p-Type WSe2 Transistors with Native Oxide WOx Interfacial Layer","volume":"25","author":"Lan","year":"2025","journal-title":"Nano Lett."},{"key":"ref_44","doi-asserted-by":"crossref","first-page":"1991","DOI":"10.1021\/nl400044m","article-title":"Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium","volume":"13","author":"Fang","year":"2013","journal-title":"Nano Lett."},{"key":"ref_45","doi-asserted-by":"crossref","first-page":"7853","DOI":"10.1021\/ja5033327","article-title":"Air-Stable Surface Charge Transfer Doping of MoS2 by Benzyl Viologen","volume":"136","author":"Kiriya","year":"2014","journal-title":"J. Am. Chem. Soc."},{"key":"ref_46","doi-asserted-by":"crossref","first-page":"1903613","DOI":"10.1002\/adma.201903613","article-title":"Chemically Tuned p- and n-Type WSe2 Monolayers with High Carrier Mobility for Advanced Electronics","volume":"31","author":"Ji","year":"2019","journal-title":"Adv. Mater."},{"key":"ref_47","doi-asserted-by":"crossref","first-page":"4824","DOI":"10.1002\/adma.201600032","article-title":"A High-Performance WSe2\/h-BN Photodetector using a Triphenylphosphine (PPh3)-Based n-Doping Technique","volume":"28","author":"Jo","year":"2016","journal-title":"Adv. Mater."},{"key":"ref_48","doi-asserted-by":"crossref","first-page":"1179","DOI":"10.1039\/C5NR06204G","article-title":"Does p-type ohmic contact exist in WSe2\u2013metal interfaces?","volume":"8","author":"Wang","year":"2016","journal-title":"Nanoscale"},{"key":"ref_49","doi-asserted-by":"crossref","first-page":"6292","DOI":"10.1021\/acsnano.8b03331","article-title":"Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2 Transistors with Reduction of Metal-Induced Gap States","volume":"12","author":"Kim","year":"2018","journal-title":"ACS Nano"},{"key":"ref_50","doi-asserted-by":"crossref","first-page":"6275","DOI":"10.1021\/nl502603d","article-title":"Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2","volume":"14","author":"Yang","year":"2014","journal-title":"Nano Lett."},{"key":"ref_51","doi-asserted-by":"crossref","first-page":"2400843","DOI":"10.1002\/aelm.202400843","article-title":"Extension Doping with Low-Resistance Contacts for P-Type Monolayer WSe2 Field-Effect Transistors","volume":"11","author":"Chen","year":"2025","journal-title":"Adv. Electron. Mater."},{"key":"ref_52","doi-asserted-by":"crossref","first-page":"664","DOI":"10.1038\/s41928-021-00641-6","article-title":"Remote modulation doping in van der Waals heterostructure transistors","volume":"4","author":"Lee","year":"2021","journal-title":"Nat. Electron."},{"key":"ref_53","doi-asserted-by":"crossref","first-page":"116","DOI":"10.1038\/nnano.2013.301","article-title":"Radial modulation doping in core\u2013shell nanowires","volume":"9","author":"Dillen","year":"2014","journal-title":"Nat. Nanotechnol."},{"key":"ref_54","doi-asserted-by":"crossref","first-page":"801","DOI":"10.1038\/nmat4303","article-title":"Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces by charge-transfer-induced modulation doping","volume":"14","author":"Chen","year":"2015","journal-title":"Nat. Mater."},{"key":"ref_55","first-page":"011043","article-title":"Charge Scattering and Mobility in Atomically Thin Semiconductors","volume":"4","author":"Ma","year":"2014","journal-title":"Phys. Rev. X"},{"key":"ref_56","doi-asserted-by":"crossref","first-page":"8916","DOI":"10.1021\/acsnano.4c16831","article-title":"Monolayer WSe2 Field-Effect Transistor Performance Enhancement by Atomic Defect Engineering and Passivation","volume":"19","author":"Tan","year":"2025","journal-title":"ACS Nano"},{"key":"ref_57","doi-asserted-by":"crossref","first-page":"11279","DOI":"10.1021\/acsnano.2c11567","article-title":"Se-Vacancy Healing with Substitutional Oxygen in WSe2 for High-Mobility p-Type Field-Effect Transistors","volume":"17","author":"Cho","year":"2023","journal-title":"ACS Nano"},{"key":"ref_58","doi-asserted-by":"crossref","first-page":"1099","DOI":"10.1021\/nn5074435","article-title":"Controllable Nondegenerate p-Type Doping of Tungsten Diselenide by Octadecyltrichlorosilane","volume":"9","author":"Kang","year":"2015","journal-title":"ACS Nano"},{"key":"ref_59","doi-asserted-by":"crossref","first-page":"11345","DOI":"10.1021\/acs.nanolett.3c04009","article-title":"Self-Aligned Top-Gate Structure in High-Performance 2D p-FETs via van der Waals Integration and Contact Spacer Doping","volume":"23","author":"Ngo","year":"2023","journal-title":"Nano Lett."},{"key":"ref_60","doi-asserted-by":"crossref","first-page":"7037","DOI":"10.1021\/acs.nanolett.5c00813","article-title":"Top-Gated P-MOSFET with CVD-Grown WSe2 Channels via Self-Aligned WOx Conversion for Spacer Doping","volume":"25","author":"Li","year":"2025","journal-title":"Nano Lett."},{"key":"ref_61","doi-asserted-by":"crossref","first-page":"1807338","DOI":"10.1002\/adfm.201807338","article-title":"Ohmic Contact in 2D Semiconductors via the Formation of a Benzyl Viologen Interlayer","volume":"29","author":"Yue","year":"2019","journal-title":"Adv. Funct. Mater."},{"key":"ref_62","doi-asserted-by":"crossref","first-page":"4219","DOI":"10.1002\/adfm.201501170","article-title":"High-Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self-Assembled Monolayer Doping","volume":"25","author":"Kang","year":"2015","journal-title":"Adv. Funct. Mater."},{"key":"ref_63","doi-asserted-by":"crossref","first-page":"10236","DOI":"10.1021\/acs.nanolett.3c02757","article-title":"High-Performance WSe2 Top-Gate Devices with Strong Spacer Doping","volume":"23","author":"Ho","year":"2023","journal-title":"Nano Lett."},{"key":"ref_64","doi-asserted-by":"crossref","first-page":"319","DOI":"10.1109\/LED.2021.3135312","article-title":"Air-Stable p-Doping in Record High-Performance Monolayer WSe2 Devices","volume":"43","author":"Chiang","year":"2022","journal-title":"IEEE Electron Device Lett."},{"key":"ref_65","doi-asserted-by":"crossref","first-page":"718","DOI":"10.1038\/s41467-025-65604-3","article-title":"Low resistance p-type contacts to monolayer WSe2 through chlorinated solvent doping","volume":"17","author":"Hoang","year":"2026","journal-title":"Nat. Commun."},{"key":"ref_66","doi-asserted-by":"crossref","first-page":"8319","DOI":"10.1021\/acsaelm.4c01574","article-title":"Locally Doped Transferred Contacts for WSe2 Transistors","volume":"6","author":"Chen","year":"2024","journal-title":"ACS Appl. Electron. Mater."},{"key":"ref_67","doi-asserted-by":"crossref","first-page":"3586","DOI":"10.1038\/s41467-026-71986-9","article-title":"Challenges and prospects of 2D electronics for future monolithic complementary field-effect transistors","volume":"17","author":"Islam","year":"2026","journal-title":"Nat. Commun."},{"key":"ref_68","doi-asserted-by":"crossref","first-page":"9","DOI":"10.1038\/s41699-023-00371-7","article-title":"Monolithic 3D integration of back-end compatible 2D material FET on Si FinFET","volume":"7","author":"Guan","year":"2023","journal-title":"npj 2D Mater. Appl."},{"key":"ref_69","doi-asserted-by":"crossref","first-page":"6795","DOI":"10.1038\/s41467-026-73144-7","article-title":"Monolithic integration of p- and n-type doped 2D WSe2 for wafer-scale complementary logic circuits","volume":"17","author":"Hu","year":"2026","journal-title":"Nat. Commun."},{"key":"ref_70","doi-asserted-by":"crossref","first-page":"233","DOI":"10.1038\/s41928-022-00753-7","article-title":"Van der Waals integration of high-\u03ba perovskite oxides and two-dimensional semiconductors","volume":"5","author":"Yang","year":"2022","journal-title":"Nat. Electron."},{"key":"ref_71","doi-asserted-by":"crossref","first-page":"3203","DOI":"10.1038\/s41467-020-17006-w","article-title":"Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers","volume":"11","author":"Alam","year":"2020","journal-title":"Nat. Commun."},{"key":"ref_72","doi-asserted-by":"crossref","first-page":"2300913","DOI":"10.1002\/pssa.202300913","article-title":"Flexible Complementary Metal-Oxide-Semiconductor Inverter Based on 2D p-type WSe2 and n-type MoS2","volume":"221","author":"Piacentini","year":"2024","journal-title":"Phys. Status Solidi A"},{"key":"ref_73","doi-asserted-by":"crossref","first-page":"11347","DOI":"10.1038\/s41467-025-66419-y","article-title":"Flexible monolithic 3D complementary circuits based on 2D semiconductor inks","volume":"16","author":"Zou","year":"2025","journal-title":"Nat. Commun."}],"container-title":["International Journal of Molecular Sciences"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1422-0067\/27\/15\/6552\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,7,23]],"date-time":"2026-07-23T09:16:31Z","timestamp":1784798191000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1422-0067\/27\/15\/6552"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,7,23]]},"references-count":73,"journal-issue":{"issue":"15","published-online":{"date-parts":[[2026,8]]}},"alternative-id":["ijms27156552"],"URL":"https:\/\/doi.org\/10.3390\/ijms27156552","relation":{},"ISSN":["1422-0067"],"issn-type":[{"value":"1422-0067","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,7,23]]}}}