{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,23]],"date-time":"2026-09-23T06:23:34Z","timestamp":1790144614255,"version":"4.0.1"},"reference-count":33,"publisher":"MDPI AG","issue":"15","license":[{"start":{"date-parts":[[2019,8,2]],"date-time":"2019-08-02T00:00:00Z","timestamp":1564704000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["U12041869"],"award-info":[{"award-number":["U12041869"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100002858","name":"China Postdoctoral Science Foundation","doi-asserted-by":"publisher","award":["2014M552020"],"award-info":[{"award-number":["2014M552020"]}],"id":[{"id":"10.13039\/501100002858","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Materials"],"abstract":"<jats:p>Copper\u2013zirconium bulk alloy and Cu\u2013Zr alloy films are prepared by vacuum smelting and magnetron sputtering, respectively, and subsequently annealing is conducted. Results show that Cu\u2013Zr bulk alloy and alloy films exhibit significantly different microstructure evolution behaviors after annealing due to different microstructures and residual stress states. CuxZr alloy compounds disperse at the grain boundary of Cu grains in as-cast and annealed Cu\u2013Zr bulk alloys. However, unlike bulk alloys, a large number of polyhedral Cu particles are formed on the Cu\u2013Zr thin films\u2019 surface upon thermal annealing. Kinetically, the residual compressive stress in the Cu\u2013Zr films promotes the formation of Cu particles. The influencing factors and the path for mass transport in the formation of the particles are discussed. The large-specific surface area particles\/film composite structure has potential applications in Surface-Enhanced Raman Scattering, catalysis, and other fields.<\/jats:p>","DOI":"10.3390\/ma12152467","type":"journal-article","created":{"date-parts":[[2019,8,2]],"date-time":"2019-08-02T11:58:16Z","timestamp":1564747096000},"page":"2467","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":12,"title":["Discrepancies in the Microstructures of Annealed Cu\u2013Zr Bulk Alloy and Cu\u2013Zr Alloy Films"],"prefix":"10.3390","volume":"12","author":[{"given":"Haoliang","family":"Sun","sequence":"first","affiliation":[{"name":"School of Materials Science and Engineering, Henan University of Science and Technology, Luoyang 471003, China"},{"name":"Collaborative Innovation Center of Nonferrous Metals Henan Province, Luoyang 471003, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0229-1334","authenticated-orcid":false,"given":"Xiaoxue","family":"Huang","sequence":"additional","affiliation":[{"name":"School of Materials Science and Engineering, Henan University of Science and Technology, Luoyang 471003, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xinxin","family":"Lian","sequence":"additional","affiliation":[{"name":"School of Materials Science and Engineering, Henan University of Science and Technology, Luoyang 471003, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Guangxin","family":"Wang","sequence":"additional","affiliation":[{"name":"School of Materials Science and Engineering, Henan University of Science and Technology, Luoyang 471003, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2019,8,2]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"179","DOI":"10.1109\/LED.2004.825190","article-title":"Design and performance of thin metal film interconnects for skin-like electronic circuits","volume":"25","author":"Lacour","year":"2004","journal-title":"IEEE Electr. 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