{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,12]],"date-time":"2025-10-12T02:00:47Z","timestamp":1760234447963,"version":"build-2065373602"},"reference-count":36,"publisher":"MDPI AG","issue":"10","license":[{"start":{"date-parts":[[2021,5,15]],"date-time":"2021-05-15T00:00:00Z","timestamp":1621036800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61805005"],"award-info":[{"award-number":["61805005"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Materials"],"abstract":"<jats:p>To understand the effects of thermal annealing on the structure of GexAsySe1\u2212x\u2212y thin films, the thermal evolution of these films was measured by the in situ X-ray diffraction (XRD) at different temperature (773 K or 1073 K) in a vacuum (10\u22121 Pa) environment. The entire process of crystallization can be observed by using in situ XRD, which is from the appearance of a crystal structure to melting liquid-state and ultimately to the disappearance of the amorphous structure. In the crystallized process, the corresponding state-transition temperatures Tx (the onset crystallization temperature), Tl (the transition temperature from glassy-state to liquid-state), Tp (peak crystallization temperature) are linear with MCN (Mean Coordination Number). In order to obtain information about changes in the amorphous structural origin of the anneal-induced material, the samples were analyzed by in situ Raman spectroscopy. Analysis of the results through decomposing the Raman spectra into different structural units showed that the Ge\u2212Ge, As\u2212As, or Se\u2212Se homopolar bonds as the nonequilibrium minority carriers could be found in films. It suggests that the formation of these bonds cannot be completely suppressed in any case, as one falls and another rises.<\/jats:p>","DOI":"10.3390\/ma14102572","type":"journal-article","created":{"date-parts":[[2021,5,16]],"date-time":"2021-05-16T23:17:16Z","timestamp":1621207036000},"page":"2572","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Micro-Structure Changes Caused by Thermal Evolution in Chalcogenide GexAsySe1\u2212x\u2212y Thin Films by In Situ Measurements"],"prefix":"10.3390","volume":"14","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-9763-1727","authenticated-orcid":false,"given":"Xueqiong","family":"Su","sequence":"first","affiliation":[{"name":"College of Applied Sciences, Beijing University of Technology, Beijing 100124, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yong","family":"Pan","sequence":"additional","affiliation":[{"name":"College of Applied Sciences, Beijing University of Technology, Beijing 100124, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Dongwen","family":"Gao","sequence":"additional","affiliation":[{"name":"College of Applied Sciences, Beijing University of Technology, Beijing 100124, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shufeng","family":"Li","sequence":"additional","affiliation":[{"name":"College of Applied Sciences, Beijing University of Technology, Beijing 100124, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jin","family":"Wang","sequence":"additional","affiliation":[{"name":"College of Applied Sciences, Beijing University of Technology, Beijing 100124, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Rongping","family":"Wang","sequence":"additional","affiliation":[{"name":"Centre for Ultra-High Bandwidth Devices for Optical Systems, Laser Physics Centre, Australian National University, ACT, 2600 Canberra, Australia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Li","family":"Wang","sequence":"additional","affiliation":[{"name":"College of Applied Sciences, Beijing University of Technology, Beijing 100124, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2021,5,15]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Guo, P., Sarangan, A.M., and Agha, I. 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Interfaces"}],"container-title":["Materials"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1996-1944\/14\/10\/2572\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T06:01:55Z","timestamp":1760162515000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1996-1944\/14\/10\/2572"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,5,15]]},"references-count":36,"journal-issue":{"issue":"10","published-online":{"date-parts":[[2021,5]]}},"alternative-id":["ma14102572"],"URL":"https:\/\/doi.org\/10.3390\/ma14102572","relation":{},"ISSN":["1996-1944"],"issn-type":[{"type":"electronic","value":"1996-1944"}],"subject":[],"published":{"date-parts":[[2021,5,15]]}}}