{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,12]],"date-time":"2025-10-12T02:39:07Z","timestamp":1760236747307,"version":"build-2065373602"},"reference-count":38,"publisher":"MDPI AG","issue":"1","license":[{"start":{"date-parts":[[2021,12,21]],"date-time":"2021-12-21T00:00:00Z","timestamp":1640044800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"Ministry of Education","award":["2021R1A6C101A429"],"award-info":[{"award-number":["2021R1A6C101A429"]}]},{"DOI":"10.13039\/501100003716","name":"Korea Basic Science Institute","doi-asserted-by":"publisher","award":["NRF-2021R1A2C2013289"],"award-info":[{"award-number":["NRF-2021R1A2C2013289"]}],"id":[{"id":"10.13039\/501100003716","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Ministry of Science and ICT through the National Research Foundation, Republic of Korea.","award":["2018K1A4A3A01064272"],"award-info":[{"award-number":["2018K1A4A3A01064272"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Materials"],"abstract":"<jats:p>Charge carrier scattering at grain boundaries (GBs) in a chemical vapor deposition (CVD) graphene reduces the carrier mobility and degrades the performance of the graphene device, which is expected to affect the quantum Hall effect (QHE). This study investigated the influence of individual GBs on the QH state at different stitching angles of the GB in a monolayer CVD graphene. The measured voltage probes of the equipotential line in the QH state showed that the longitudinal resistance (Rxx) was affected by the scattering of the GB only in the low carrier concentration region, and the standard QHE of a monolayer graphene was observed regardless of the stitching angle of the GB. In addition, a controlled device with an added metal bar placed in the middle of the Hall bar configuration was introduced. Despite the fact that the equipotential lines in the controlled device were broken by the additional metal bar, only the Rxx was affected by nonzero resistance, whereas the Hall resistance (Rxy) revealed the well-quantized plateaus in the QH state. Thus, our study clarifies the effect of individual GBs on the QH states of graphenes.<\/jats:p>","DOI":"10.3390\/ma15010008","type":"journal-article","created":{"date-parts":[[2021,12,21]],"date-time":"2021-12-21T09:50:43Z","timestamp":1640080243000},"page":"8","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Quantum Hall Effect across Graphene Grain Boundary"],"prefix":"10.3390","volume":"15","author":[{"given":"Tuan Khanh","family":"Chau","sequence":"first","affiliation":[{"name":"Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0392-3391","authenticated-orcid":false,"given":"Dongseok","family":"Suh","sequence":"additional","affiliation":[{"name":"Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Haeyong","family":"Kang","sequence":"additional","affiliation":[{"name":"Department of Physics, Pusan National University, Busan 46241, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2021,12,21]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"385","DOI":"10.1126\/science.1157996","article-title":"Measurement of the elastic properties and intrinsic strength of monolayer graphene","volume":"321","author":"Lee","year":"2008","journal-title":"Science"},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"543","DOI":"10.1038\/nnano.2011.123","article-title":"Ultrastrong adhesion of graphene membranes","volume":"6","author":"Koenig","year":"2011","journal-title":"Nat. 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